NPDS8301 [ETC]
TRANSISTOR | JFET | N-CHANNEL | 40V V(BR)DSS | 500UA I(DSS) | SO ; 晶体管| JFET | N沟道| 40V V（ BR ） DSS |电流降至500uA我（ DSS ） | SO\n
| 型号： | NPDS8301 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | JFET | N-CHANNEL | 40V V(BR)DSS | 500UA I(DSS) | SO
|
| 文件： | 总4页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Discr ete P OWER & Sign a l
Tech n ologies
NPDS8301
NPDS8302
NPDS8303
S2
D2
NC
G2
G1
NC
D1
SO-8
S1
N-Channel General Purpose Dual Amplifier
Sourced from Process 83.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VDG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
40
40
V
V
VGS
IGF
10
mA
°C
Operating and Storage Junction Temperature Range
-55 to +150
TJ , Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
1997 Fairchild Semiconductor Corporation
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General Purpose Dual Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max Units
OFF CHARACTERISTICS
V(BR)GSS
Gate-Source Breakdown Voltage
- 40
V
IG = 1.0 µA, VDS = 0
VGS = 20 V, VDS = 0
VDS = 20 V, ID = 1.0 nA
VDS = 20 V, ID = 200 µA
IGSS
Gate Reverse Current
Gate-Source Cutoff Voltage
Gate-Source Voltage
100
- 3.5
- 3.5
pA
V
- 0.5
- 0.3
VGS(off)
VGS
V
ON CHARACTERISTICS
IDSS
Zero-Gate Voltage Drain Current*
VDS = 20 V, VGS = 0
0.5
6.0
mA
SMALL SIGNAL CHARACTERISTICS
Common Source Forward
Transconductance
VDS = 20 V, VGS = 0, f = 1.0 kHz
VDS = 20 V, ID = 200 µA,
f = 1.0 kHz
1000
700
4000
1200
µmhos
µmhos
gfs
Common Source Output Conductance
goss
20
VDS = 20 V, ID = 200 µA,
f = 1.0 kHz
VDS = 20 V, ID = 200 µA,
f = 1.0 kHz
µmhos
µmhos
Common Source Output
Conductance
5.0
gos
VGS1 - VGS2
Differential Match
VDG = 20 V, ID = 200 µA,
NPDS8301
5.0
10
15
mV
mV
mV
NPDS8302
NPDS8303
Differential Drift
∆VGS1 - VGS2
VDS = 20 V, ID = 200 µA,
10
15
25
TA = 25 to 85 °C
NPDS8301
NPDS8302
NPDS8303
µV/°C
µV/°C
µV/°C
*Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%
Typical Characteristics
Parameter Interactions
Common Drain-Source
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General Purpose Dual Amplifier
(continued)
Typical Characteristics (continued)
Transfer Characteristics
Transfer Characteristics
Channel Resistance
vs. Temperature
Leakage Current vs. Voltage
Noise Voltage vs. Frequency
Noise Voltage vs. Current
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General Purpose Dual Amplifier
(continued)
Typical Characteristics (continued)
Output Conductance
vs. Drain Current
Transconductance vs.
Drain Current
Capacitance vs. Voltage
Differential Offset
CMRR vs. Drain Current
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