NSEMP11XV6T1/D [ETC]
Common Anode Switching Diode ; 共阳极开关二极管\n
| 型号： | NSEMP11XV6T1/D |
| 厂家： | 
ETC |
| 描述： | Common Anode Switching Diode
|
| 文件： | 总4页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NSDEMP11XV6T1,
NSDEMP11XV6T5
Common Anode Quad
Array Switching Diode
These Common Anode Epitaxial Planar QUAD Diodes are
designed for use in ultra high speed switching applications. The
NSDEMP11XV6T1 device is housed in the SOT-563 package which
is designed for low power surface mount applications, where board
space is at a premium.
http://onsemi.com
(2)
(3)
(1)
• Fast t
rr
• Low C
D
• Available in 8 mm; 7 inch Tape and Reel
MAXIMUM RATINGS (T = 25°C)
A
Rating
Reverse Voltage
Symbol
Value
80
Unit
Vdc
(4)
(5)
(6)
V
R
Peak Reverse Voltage
Forward Current
V
80
Vdc
RM
MARKING
DIAGRAM
I
100
300
2.0
mAdc
mAdc
Adc
4
F
5
6
Peak Forward Current
Peak Forward Surge Current
I
FM
3
2
1
I
FSM
(Note 1)
SOT-563
CASE 463A
PLASTIC
P9 D
1. t = 1 mS
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
P9 = Specific Device Code
= Date Code
Total Device Dissipation
T = 25°C
P
D
357
(Note 2)
2.9
mW
D
A
Derate above 25°C
mW/°C
°C/W
(Note 2)
Thermal Resistance Junction-to-Ambient
R
350
(Note 2)
q
JA
ORDERING INFORMATION
Device
Package
Shipping
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
NSDEMP11XV6T1
SOT-563
4 mm pitch
4000/Tape & Reel
Total Device Dissipation
T = 25°C
P
500
(Note 2)
4.0
mW
A
D
NSDEMP11XV6T5
SOT-563
2 mm pitch
8000/Tape & Reel
Derate above 25°C
mW/°C
°C/W
°C
(Note 2)
Thermal Resistance Junction-to-Ambient
Junction and Storage Temperature
2. FR-4 @ Minimum Pad
R
250
(Note 2)
q
JA
T , T
J
- 55 to
+150
stg
ELECTRICAL CHARACTERISTICS (T = 25°C)
A
Characteristic
Reverse Voltage Leakage Current
Forward Voltage
Symbol
Condition
= 70 V
Min
Max
0.1
1.2
—
Unit
mAdc
Vdc
Vdc
pF
I
R
V
R
-
-
V
I = 100 mA
F
F
R
D
Reverse Breakdown Voltage
Diode Capacitance
V
C
I
R
= 100 mA
-0
-
V
= 6.0 V, f = 1.0 MHz
3.5
4.0
R
Reverse Recovery Time
t (Note 2)
rr
I = 5.0 mA, V = 6.0 V, R = 100 W, I = 0.1 I
R
-
ns
F
R
L
rr
3. t Test Circuit for NSDEMP11XV6T1 in Figure 4.
rr
Semiconductor Components Industries, LLC, 2003
1
Publication Order Number:
February, 2003 - Rev. 1
NSDEMP11XV6T1/D
NSDEMP11XV6T1, NSDEMP11XV6T5
TYPICAL ELECTRICAL CHARACTERISTICS
10
100
10
T = 150°C
A
T = 85°C
A
T = 125°C
A
1.0
T = −ꢀ40°C
A
T = 85°C
A
0.1
0.01
T = 55°C
1.0
0.1
A
T = 25°C
A
T = 25°C
A
0.001
50
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
V , FORWARD VOLTAGE (VOLTS)
F
V , REVERSE VOLTAGE (VOLTS)
R
Figure 1. Forward Voltage
Figure 2. Reverse Current
1.75
1.5
1.25
1.0
0.75
0
2
4
6
8
V , REVERSE VOLTAGE (VOLTS)
R
Figure 3. Diode Capacitance
t
r
t
p
t
rr
I
F
t
t
10%
R
L
I = 0.1 I
rr
R
A
90%
I = 5.0 mA
F
V
= 6 V
R
V
R
R = 100 W
L
t = 2 ms
p
t = 0.35 ns
r
INPUT PULSE
OUTPUT PULSE
RECOVERY TIME EQUIVALENT TEST CIRCUIT
Figure 4. Reverse Recovery Time Test Circuit for the NSDEMP11XV6T1
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2
NSDEMP11XV6T1, NSDEMP11XV6T5
INFORMATION FOR USING THE SOT-563 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.3
0.0118
0.45
0.0177
1.0
0.0394
1.35
0.0531
0.5 0.5
0.0197 0.0197
mm
inches
ǒ
Ǔ
SCALE 20:1
SOT-563
SOT-563 POWER DISSIPATION
SOLDERING PRECAUTIONS
The power dissipation of the SOT-563 is a function of
the pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipa-
tion. Power dissipation for a surface mount device is deter-
The melting temperature of solder is higher than the
rated temperature of the device. When the entire device is
heated to a high temperature, failure to complete soldering
within a short time could result in device failure. There-
fore, the following items should always be observed in
order to minimize the thermal stress to which the devices
are subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
mined by T , the maximum rated junction temperature
J(max)
of the die, R , the thermal resistance from the device
qJA
junction to ambient, and the operating temperature, T .
A
Using the values provided on the data sheet for the
SOT-563 package, P can be calculated as follows:
D
TJ(max) - TA
Rq
PD =
JA
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature T of 25°C,
A
one can calculate the power dissipation of the device which
in this case is 150 milliwatts.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
150°C - 25°C
833°C/W
PD =
= 150 milliwatts
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
The 833°C/W for the SOT-563 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 150 milli-
watts. There are other alternatives to achieving higher
power dissipation from the SOT-563 package. Another
alternative would be to use a ceramic substrate or an
aluminum core board such as Thermal Clad . Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
• Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause exces-
sive thermal shock and stress which can result in damage
to the device.
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3
NSDEMP11XV6T1, NSDEMP11XV6T5
PACKAGE DIMENSIONS
SOT-563, 6 LEAD
CASE 463A-01
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
A
C
-X-
K
6
5
2
4
3
MILLIMETERS
DIM MIN MAX
INCHES
B
-Y-
MIN
MAX
0.067
0.051
0.024
0.011
S
A
B
C
D
G
J
1.50
1.10
0.50
0.17
1.70 0.059
1.30 0.043
0.60 0.020
0.27 0.007
1
0.50 BSC
0.020 BSC
D 56 PL
J
0.08
0.10
1.50
0.18 0.003
0.30 0.004
1.70 0.059
0.007
0.012
0.067
G
M
0.08 (0.003)
X Y
K
S
STYLE 1:
PIN 1. EMITTER 1
2. BASE 1
STYLE 2:
STYLE 3:
PIN 1. CATHODE 1
2. CATHODE 1
STYLE 4:
PIN 1. EMITTER 1
2. EMITTER2
3. BASE 2
4. COLLECTOR 2
5. BASE 1
6. COLLECTOR 1
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
3. ANODE/ANODE 2
4. CATHODE 2
5. CATHODE 2
6. COLLECTOR 1
6. ANODE/ANODE 1
Thermal Clad is a trademark of the Bergquist Company.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment:
JAPAN: ON Semiconductor, Japan Customer Focus Center
2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051
Phone: 81-3-5773-3850
Literature Distribution Center for ON Semiconductor
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Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada
Email: ONlit@hibbertco.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
N. American Technical Support: 800-282-9855 Toll Free USA/Canada
NSDEMP11XV6T1/D
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