NSFY30724 [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 700V V(BR)DSS | 4.3A I(D) | TO-257 ; 晶体管| MOSFET | N沟道| 700V V（ BR ） DSS | 4.3AI （D ） | TO- 257\n
| 型号： | NSFY30724 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | N-CHANNEL | 700V V(BR)DSS | 4.3A I(D) | TO-257
|
| 文件： | 总1页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
相关型号：
NSFY30724Z
TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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MICROSEMI
NSFY30728
Power Field-Effect Transistor, 4A I(D), 700V, 2.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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MICROSEMI
NSFY30824
Power Field-Effect Transistor, 4.3A I(D), 800V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
MICROSEMI
NSFY30824Z
TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
MICROSEMI
NSFY30828
Power Field-Effect Transistor, 4A I(D), 800V, 2.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
MICROSEMI
NSFY30940
Power Field-Effect Transistor, 3.3A I(D), 900V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
MICROSEMI
NSFY30940Z
TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
MICROSEMI
NSFY30942
Power Field-Effect Transistor, 3A I(D), 900V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
MICROSEMI
NSFY31040
Power Field-Effect Transistor, 3.3A I(D), 1000V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
MICROSEMI
NSFY31042
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 3A I(D) | TO-257Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
ETC
NSFY31042Z
TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
MICROSEMI
NSFY340
Power Field-Effect Transistor, 10A I(D), 400V, 0.56ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
MICROSEMI
NSFY400
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5.5A I(D) | TO-257Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
ETC
NSFY440
Power Field-Effect Transistor, 8A I(D), 500V, 0.86ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
MICROSEMI
NSFY440Z
TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
MICROSEMI
NSFY9130
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 5.3A I(D) | TO-257Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
ETC
NSFY9140
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 9.3A I(D) | TO-257Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
ETC
NSG-1
Stable electronic timingWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
DBLECTRO
NSG-1AZ
Stable electronic timingWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
DBLECTRO
NSG-2
Stable electronic timingWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
DBLECTRO
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