NSG21034 [ETC]

TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 34A I(C) | TO-254 ; 晶体管| IGBT | N -CHAN | 1KV V( BR ) CES | 34A I(C ) | TO- 254
NSG21034
元器件型号: NSG21034
生产厂家: ETC    ETC
描述和应用:

TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 34A I(C) | TO-254
晶体管| IGBT | N -CHAN | 1KV V( BR ) CES | 34A I(C ) | TO- 254

晶体 晶体管 双极性晶体管 栅 局域网
PDF文件: 总1页 (文件大小:55K)
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型号参数:NSG21034参数

NSG2555

Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, TO-254Z, 3 PIN

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0 MICROSEMI

NSG2556

Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-259AA, Metal, 3 Pin, TO-259AA, 3 PIN

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0 MICROSEMI

NSG2559

Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, TO-254Z, 3 PIN

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0 MICROSEMI

NSG2561

Adjustable Positive LDO Regulator, 1.5V Dropout, MSFM3, HERMETIC SEALED, TO-254Z

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0 MICROSEMI

NSG2585

Adjustable Negative Standard Regulator, 1.2V Min, 37V Max, BIPolar, MSFM3, TO-254Z, 3 PIN

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0 MICROSEMI

NSG2599

Rectifier Diode, 1 Phase, 2 Element, 8A, 200V V(RRM), Silicon, TO-257AA, TO-257AA, 3 PIN

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0 MICROSEMI

NSG2600

Rectifier Diode, 1 Phase, 2 Element, 8A, 200V V(RRM), Silicon, TO-257AA, TO-257AA, 3 PIN

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0 MICROSEMI

NSG2601

Rectifier Diode, 1 Phase, 2 Element, 8A, 600V V(RRM), Silicon, TO-257AA, TO-257AA, 3 PIN

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0 MICROSEMI

NSG2602

Rectifier Diode, 1 Phase, 2 Element, 8A, 600V V(RRM), Silicon, TO-257AA, TO-257AA, 3 PIN

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0 MICROSEMI

NSG2603

Rectifier Diode, 1 Phase, 2 Element, 15A, 100V V(RRM), Silicon, TO-258AA, TO-258AA, 3 PIN

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0 MICROSEMI

NSG2607

Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 100V V(RRM), Silicon, TO-254AA, TO-254AA, 3 PIN

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0 MICROSEMI

NSG2610

Adjustable Positive Standard Regulator, MSFM3, TO-254Z, 3 PIN

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0 MICROSEMI

NSG2649

Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257, TO-257, 3 PIN

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0 MICROSEMI

NSG2657

Power Bipolar Transistor, 2.5A I(C), 325V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, Metal, 3 Pin, TO-254, 3 PIN

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0 MICROSEMI

NSG2658

Power Bipolar Transistor, 2.5A I(C), 325V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, TO-254Z, 3 PIN

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0 MICROSEMI