OM50N05SW [ETC]
50V Single N-Channel Hi-Rel MOSFET in a D3 package ; 50V单N沟道高可靠性MOSFET在D3包装\n
| 型号： | OM50N05SW |
| 厂家： | 
ETC |
| 描述： | 50V Single N-Channel Hi-Rel MOSFET in a D3 package
|
| 文件： | 总6页 (文件大小：208K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
OM60N06SA OM60N05SA OM50N06ST
OM50N06SA OM50N05SA OM50N05ST
LOW VOLTAGE, LOW RDS(on) POWER MOSFETS
IN HERMETIC ISOLATED PACKAGE
50V And 60V Ultra Low RDS(on)
Power MOSFETs In TO-257 And TO-254
Isolated Packages
FEATURES
• Isolated Hermetic Metal Packages
• Ultra Low RDS(on)
• Low Conductive Loss/Low Gate Charge
• Available Screened To MIL-S-19500, TX, TXV And S Levels
• Ceramic Feedthroughs Available
DESCRIPTION
This series of hermetic packaged MOSFETs are ideally suited for low voltage
applications; battery powered voltage power supplies, motor controls, dc to dc
converters and synchronous rectification. The low conduction loss allows smaller
heat sinking and the low gate charge simpler drive circuitry.
MAXIMUM RATINGS (Per Device)
3.1
SCHEMATIC
T-3 PIN
CONNECTION
M-PAK PIN
CONNECTION
Drain
1
2 3
Gate
1
2
3
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
Source
4 11 R1
Supersedes 3 02 R0
3.1 - 65
OM60N06SA - OM50N05ST
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
50N06ST
50N05SA
50N05ST
50N05SA
Parameter
60N06SA
60N05SA
Units
VDS
Drain-Source Voltage
60
60
60
60
50
50
50
50
V
V
VDGR
Drain-Gate Voltage (RGS = )
Gate-Source Voltage, Continuous
Continuous Drain Current2
Continuous Drain Current2
Pulsed Drain Current1
VGS
+20
55
+20
50
+20
55
+20
50
V
ID @ TC = 25°C
ID @ TC = 100°C
IDM
A
37
33
37
33
A
220
100
40
200
100
40
220
100
40
200
100
40
A
PD @ TC = 25°C
Maximum Power Dissipation
W
W
W/°C
PD @ TC = 100°C Maximum Power Dissipation
Junction-To-Case Linear Derating Factor1
.80
.80
.80
.80
TJ
Operating and
-55 to 150 -55 to 150 -55 to 150 -55 to 150
°C
°C
Tstg
Storage Temperature Range
Lead Temperature (1/16" from case for 10 secs.)
300
300
300
300
1 Pulse Test: 1.5%.
2 Package Limited SA ID = 25 A, SC SC ID = 35 A @ 25° C
THERMAL RESISTANCE
RthJC
Junction-to-Case
1.25
°C/W
PACKAGE LIMITATIONS
Parameters
TO254AA TO-257AA
Unit
ID
Continuous Drain Current
25
.020
50
15
.015
65
A
Linear Derating Factor, Junction-to-Ambient
W/°C
°C/W
W/°C
RthJA
Thermal Resistance, Junction-to-Ambient (Free Air Operation)
Linear Derating, Junction-to-Case
0.8
0.8
3.1
PACKAGE OPTIONS
M-PAK MECHANICAL OUTLINE
T-3 MECHANICAL OUTLINE
MOD PAK
Z-TAB
Notes:
• Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the
part number. Example - OMXXXXCSA.
• MOSFETs are also available in Z-Pak, dual and quad pak styles. Please call the factory for more information.
6 PIN SIP
3.1 - 66
OM60N06SA - OM50N05ST
3.1
3.1 - 67
OM60N06SA - OM50N05ST
3.1
3.1 - 68
OM60N06SA - OM50N05ST
3.1
3.1 - 69
OM60N06SA - OM50N05ST
Switching Times Test Circuits
Test Circuit For Inductive Load Switching
And Diode Reverse Recovery Time
For Resistive Load
TYPICAL CHARACTERISTICS
Gate Charge vs Gate-Source Voltage
Capacitance Variations
3.1
Normalized Gate Threshold
Voltage vs Temperature
Normalized On Resistance
vs Temperature
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