P4404EDG [ETC]

P-Channel Logic Level Enhancement Mode Field Effect Transistor ( Preliminary ); P沟道逻辑电平增强模式场效应晶体管(初步)
P4404EDG
型号: P4404EDG
厂家: ETC    ETC
描述:

P-Channel Logic Level Enhancement Mode Field Effect Transistor ( Preliminary )
P沟道逻辑电平增强模式场效应晶体管(初步)

晶体 晶体管 场效应晶体管
文件: 总5页 (文件大小:133K)
下载:  下载PDF数据表文档文件

P440CH26F4D

Silicon Controlled Rectifier, 2320A I(T)RMS, 2600V V(DRM), 2600V V(RRM), 1 Element

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0 IXYS

P440CH26F4DO

Silicon Controlled Rectifier, 2320A I(T)RMS, 2600V V(DRM), 2600V V(RRM), 1 Element

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0 IXYS

P440CH26F4DO

Silicon Controlled Rectifier, 2320A I(T)RMS, 2600V V(DRM), 2600V V(RRM), 1 Element

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0 IXYS

P440CH26F5D

暂无描述

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0 IXYS

P440CH26F5DO

Silicon Controlled Rectifier, 2320A I(T)RMS, 2600V V(DRM), 2600V V(RRM), 1 Element

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0 IXYS

P440CH26F5DO

Silicon Controlled Rectifier, 2320A I(T)RMS, 2600V V(DRM), 2600V V(RRM), 1 Element

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0 IXYS

P440CH28C4D

Silicon Controlled Rectifier, 2320A I(T)RMS, 2800V V(DRM), 2800V V(RRM), 1 Element

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0 IXYS

P440CH28C5D

Silicon Controlled Rectifier, 2320A I(T)RMS, 2800V V(DRM), 2800V V(RRM), 1 Element

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0 IXYS

P440CH28D4D

Silicon Controlled Rectifier, 2320A I(T)RMS, 2800V V(DRM), 2800V V(RRM), 1 Element

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0 IXYS

P440CH28D5D

Silicon Controlled Rectifier, 2320A I(T)RMS, 2800V V(DRM), 2800V V(RRM), 1 Element

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0 IXYS

P440CH28E5DO

Silicon Controlled Rectifier, 2320A I(T)RMS, 2800V V(DRM), 2800V V(RRM), 1 Element

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0 IXYS

P440CH28E5DO

Silicon Controlled Rectifier, 2320A I(T)RMS, 2800V V(DRM), 2800V V(RRM), 1 Element

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0 IXYS

P440CH28F4D

Silicon Controlled Rectifier, 2320A I(T)RMS, 2800V V(DRM), 2800V V(RRM), 1 Element

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0 IXYS

P440CH28F4DO

Silicon Controlled Rectifier, 2320A I(T)RMS, 2800V V(DRM), 2800V V(RRM), 1 Element

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0 IXYS

P440CH30C4DO

Silicon Controlled Rectifier, 2320A I(T)RMS, 3000V V(DRM), 3000V V(RRM), 1 Element

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0 IXYS