P4C17015JM [ETC]
ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS; 超高速4K ×4的静态CMOS RAMS
| 型号： | P4C17015JM |
| 厂家： | 
ETC |
| 描述： | ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS |
| 文件： | 总8页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
P4C168, P4C169, P4C170
ULTRA HIGH SPEED 4K x 4
STATIC CMOS RAMS
FEATURES
Full CMOS, 6T Cell
Fully TTL Compatible, Common I/O Ports
Three Options
High Speed (Equal Access and Cycle Times)
– 12/15/20/25ns (Commercial)
– 20/25/35ns (P4C168 Military)
– P4C168 Low Power Standby Mode
– P4C169 Fast Chip Select Control
– P4C170 Fast Chip Select, Output Enable
Controls
Low Power Operation (Commercial)
– 715 mW Active
– 193 mW Standby (TTL Input) P4C168
– 83 mW Standby (CMOS Input) P4C168
Standard Pinout (JEDEC Approved)
– P4C168: 20-pin DIP, SOJ and SOIC
– P4C169: 20-pin DIP and SOIC
– P4C170: 22-pin DIP
Single 5V±10% Power Supply
DESCRIPTION
Access times as fast as 12 nanoseconds are available,
permitting greatly enhanced system operating speeds.
CMOS is used to reduce power consumption to a low 715
mW active, 193 mW standby.
TheP4C168, P4C169andP4C170areafamilyof16,384-
bit ultra high-speed static RAMs organized as 4K x 4. All
three devices have common input/output ports.The
P4C168 enters the standby mode when the chip enable
(CE) control goes high; with CMOS input levels, power
consumptionisonly83mWinthismode. BoththeP4C169
and the P4C170 offer a fast chip select access time that is
only 67% of the address access time. In addition, the
P4C170 includes an output enable (OE) control to elimi-
natedatabuscontention.TheRAMsoperatefromasingle
5V ± 10% tolerance power supply.
TheP4C168andP4C169areavailablein20-pin(P4C170
in 22-pin) 300 mil DIP packages providing excellent board
leveldensities. TheP4C168isalsoavailablein20-pin300
mil SOIC and SOJ packages.
The P4C169 is also available in a 20-pin 300 mil SOIC
package. TheP4C170isalsoavailableina22-pin300mil
SOJ package.
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATIONS
A
16,384-BIT
ROW
(7)
MEMORY
ARRAY
SELECT
A
A
A
A
A
A
A
A
1
2
3
4
20
19
18
17
V
A
A
A
A
A
A
A
A
A
A
A
A
1
2
3
4
22
21
20
19
V
A
A
A
A
0
1
CC
11
0
1
CC
11
A
2
3
4
5
10
9
2
3
4
5
10
9
I/O1
I/O2
I/O3
I/O4
INPUT
DATA
COLUMN I/O
5
6
7
8
16
15
14
13
5
6
7
8
18
17
16
15
8
8
CONTROL
I/O
NC
I/O
4
I/O
6
7
3
6
7
4
I/O
I/O
3
POWER
DOWN
2
COLUMN
SELECT
9
12
11
I/O
9
14
13
12
I/O
2
CE, CS
CS
OE
1
GND
10
10
11
I/O
1
WE
GND
WE
or
CE
CS
P4C168
DIP (P2, D2) DIP (P2)
SOIC (S2)
SOJ (J2)
P4C169
P4C170
DIP (P3)
TOP VIEW
A
A
P4C168
ONLY
WE
OE
(5)
SOIC (S2)
NOTES: CE USED ON P4C168 ALSO FOR POWER DOWN FUNCTIONS
CE USED ON P4C169 FAST CHIP SELECT
TOP VIEW
OE OUTPUT ENABLE FUNCTION ON P4C170 ONLY
Means Quality, Service and Speed
1Q97
33
P4C168, P4C169, P4C170
MAXIMUM RATINGS(1)
Symbol
Parameter
Value
Unit
Symbol
Parameter
Value
Unit
TBIAS
Temperature Under
Bias
–55 to +125 °C
VCC
Power Supply Pin with
Respect to GND
–0.5 to +7
V
TSTG
PT
Storage Temperature
Power Dissipation
DC Output Current
–65 to +150 °C
Terminal Voltage with
Respect to GND
(up to 7.0V)
–0.5 to
VCC +0.5
VTERM
TA
V
1.0
50
W
IOUT
mA
Operating Temperature –55 to +125 °C
CAPACITANCES(4)
RECOMMENDED OPERATING CONDITIONS
(VCC = 5.0V, TA = 25°C, f = 1.0MHz)
Grade(2)
Ambient Temp
0°C to 70°C
Gnd
VCC
Symbol
CIN
Parameter
Conditions Typ. Unit
0V 5.0V ± 10%
0V 5.0V ± 10%
Commercial
Input Capacitance VIN = 0V
Output Capacitance VOUT= 0V
5
7
pF
pF
–55°C to +125°C
Military
COUT
DC ELECTRICAL CHARACTERISTICS
P4C168/169/170
Symbol
Parameter
Unit
Test Conditions
Min
2.2
Max
VCC +0.5
0.8
VIH
Input High Voltage
V
V
V
V
V
V
VIL
Input Low Voltage
–0.5(3)
VHC
VLC
VCD
VOL
CMOS Input High Voltage
CMOS Input Low Voltage
Input Clamp Diode Voltage
V
CC –0.2
VCC +0.5
–0.5(3)
0.2
–1.2
0.4
VCC = Min., IIN = –18 mA
Output Low Voltage
(TTL Load)
IOL = +8 mA, VCC = Min.
IOLC = +100 µA, VCC = Min.
IOH = –4 mA, VCC = Min.
IOHC = –100 µA, VCC = Min.
VOLC
VOH
Output Low Voltage
(CMOS Load)
0.2
V
V
V
2.4
Output High Voltage
(TTL Load)
VOHC
Output High Voltage
(CMOS Load)
V
CC –0.2
–10
–5
+10
+5
Mil.
Comm’l
Input Leakage Current
VCC = Max., VIN = GND to VCC
µA
ILI
Mil.
Comm’l
–10
–5
+10
+5
VCC = Max., CS = VIH,
VOUT = GND to VCC
ILO
Output Leakage Current
µA
mA
mA
___
Dynamic Operating
Current
VCC = Max., f = Max., Outputs Open
130
35
ICC
ISB
___
Standby Power Supply
Current (TTL Input Levels)
P4C168 only
CE ≥ VIH, VCC = Max., f = Max.,
Outputs Open
___
ISB1
CE ≥ VHC, VCC = Max., f = 0,
Outputs Open
VIN ≤ VLC or VIN ≥ VHC
15
Standby Power
Supply Current
(CMOS Input Levels)
P4C168 only
mA
34
P4C168, P4C169, P4C170
AC CHARACTERISTICS—READ CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
–12
–15
–25
–35
–20
Sym.
Parameter
Read Cycle Time
Unit
Min Max Min Max Min Max Min Max Min Max
tRC
tAA
12
15
20
25
35
ns
ns
20
20
12
Address Access Time
12
12
8
15
15
9
25
25
15
35
35
20
§
tAC
ns
ns
ns
Chip Enable Access Time
‡
tAC
Chip Select Access Time
Output Hold from Address Change
2
2
2
2
2
2
tOH
2
2
2
2
‡
tLZ
Chip Enable to Output in Low Z
Chip Disable to Output in High Z
Output Enable to Data Valid
ns
ns
ns
ns
†
tHZ
6
8
7
9
10
15
15
15
†
tOE
10
12
†
tOLZ
0
Output Enable to Output in Low Z
Output Disable to Output in High Z
Read Command Setup Time
Read Command Hold Time
0
0
0
0
†
tOHZ
6
7
9
11
15
ns
ns
ns
ns
ns
tRCS
tRCH
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
§
tPU
Chip Enable to Power Up Time
Chip Disable to Power Down Time
§
tPD
12
15
25
35
20
§ P4C168 only
† P4C170 only
‡ Chip Select/Deselect for P4C169 and P4C170
TIMING WAVEFORM OF READ CYCLE NO. 1 (ADDRESS CONTROLLED)(5,6)
(9)
t
RC
ADDRESS
t
AA
t
OH
PREVIOUS DATA VALID
DATA VALID
DATA OUT
Notes:
5. WE is HIGH for READ cycle.
6. CE/CS and OE are LOW for READ cycle.
35
P4C168, P4C169, P4C170
TIMING WAVEFORM OF READ CYCLE NO. 2 (CE/CS CONTROLLED)(5,7)
t
RC
CE/CS
(7)
t
HZ
t
AC
(7)
(7)
LZ
t
DATAVALID
DATA OUT
HIGH IMPEDANCE
(7)
t
t
OLZ
OHZ
t
OE
OE
(P4C170)
t
t
RCS
RCH
WE
t
t
PD
PU
I
I
CC
SB
V
SUPPLY
CC
CURRENT
(P4C168 ONLY)
TIMING WAVEFORM OF READ CYCLE NO. 3—P4C170 ONLY (OE CONTROLLED)(5)
(9)
t
RC
ADDRESS
t
AA
OE
CS
t
t
t
OH
OE
(8)
OLZ
t
(8)
OHZ
(8)
HZ
t
AC
(8)
t
t
LZ
DATA OUT
Notes:
1521 05
7. ADDRESS must be valid prior to, or coincident with CE/CS transition
low. For Fast CS, tAA must still be met.
9. Read Cycle Time is measured from the lavalid address to the first
transitioning address.
8. Transition is measured ±200mV from steady state voltage prior to
change, with loading as specified in Figure 1.
36
P4C168, P4C169, P4C170
AC ELECTRICAL CHARACTERISTICS - WRITE CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
–20
Min Max
18
–12
Min
–15
–35
–25
Min Max
20
Unit
Sym.
Parameter
Max Min
Min
Max
Max
tWC
tCW
12
12
15
15
35
30
ns
ns
Write Cycle Time
18
20
Chip Enable Time to
End of Write
tAW
12
15
18
20
30
ns
Address Valid to
End of Write
tAS
Address Set-up Time
Write Pulse Width
Address Hold Time
0
0
0
18
0
0
20
0
0
30
0
ns
ns
ns
ns
tWP
tAH
tDW
12
15
0
7
0
8
Data Valid to End
of Write
10
10
15
tDH
tWZ
Data Hold Time
0
0
0
0
0
ns
ns
0
4
5
7
7
Write Enable to
Output in High Z
13
tOW
Output Active from
End of Write
0
0
0
0
ns
TIMING WAVEFORM OF WRITE CYCLE NO. 1 (WE CONTROLLED)(10)
(12)
t
WC
ADDRESS
t
CW
CE/CS
t
t
AW
AH
t
WP
WE
t
t
t
AS
DW
DATA VALID
DH
DATA IN
(8,11)
OW
(8)
WZ
t
t
DATA OUT
DATA UNDEFINED
HIGH IMPEDANCE
Notes:
10. CE/CS and WE must be LOW for WRITE cycle.
11. If CE/CS goes HIGH simultaneously with WE HIGH, the output
12. Write Cycle Time is measured from the last valid address to the first
transitioning address.
remains in a high impedance state.
37
P4C168, P4C169, P4C170
TIMING WAVEFORM OF WRITE CYCLE NO. 2 (CE/CS CONTROLLED)(10)
(12)
t
WC
ADDRESS
t
AS
t
CW
CE/CS
t
AH
t
WR
t
AW
t
WP
WE
t
t
DH
DW
DATA IN
DATA VALID
DATA OUT
HIGH IMPEDANCE
TRUTH TABLES
P4C168 (P4C169)
P4C170
Mode
CE
H
L
WE
X
OE
X
Output
High Z
DOUT
Mode
Standby (Deselect)
Read
CE (CS)
WE
X
Output
High Z
DOUT
Deselect
Read
H
L
L
H
L
H
Output Inhibit
Write
L
H
H
High Z
High Z
Write
L
High Z
L
L
X
AC TEST CONDITIONS
Input Pulse Levels
GND to 3.0V
3ns
Input Rise and Fall Times
Input Timing Reference Level
Output Timing Reference Level
Output Load
1.5V
1.5V
See Figures 1 and 2
+5
R
= 166.5 Ω
TH
480Ω
D
VTH = 1.73 V
OUT
D
OUT
30pF(5pF* for t , t , t
,
HZ LZ OHZ
255Ω
300pF(5pF* for t , t , t
HZ LZ OHZ
,
t
, t and t
OLZ WZ OW
t
, t
and t )
OLZ WZ
OW
Figure 2. Thevenin Equivalent
Figure 1. Output Load
* including scope and test fixture.
Note:
high frequency capacitor is also required between VCC and ground. To
avoid signal reflections, proper termination must be used; for example,
a 50Ω test environment should be terminated into a 50Ω load with 1.73V
(TheveninVoltage)atthecomparatorinput, anda116Ω resistormustbe
used in series with DOUT to match 166Ω (Thevenin Resistance).
Because of the ultra-high speed of the P4C168, P4C169 AND P4C170
caremustbetakenwhentestingthesedevices;aninadequatesetupcan
cause a normal functioning part to be rejected as faulty. Long high-
inductance leads that cause supply bounce must be avoided by bringing
the VCC and ground planes directly up to the contactor fingers. A 0.01 µF
38
P4C168, P4C169, P4C170
TEMPERATURE RANGE SUFFIX
PACKAGE SUFFIX
Temperature
Range Suffix
Package
Description
Suffix
Description
C
Commercial Temperature Range,
0°C – +70°C.
Military Temperature Range,
–55°C – +125°C.
P
S
J
Plastic DIP, 300 mil wide standard
Plastic SOIC, 300 mil wide standard
Plastic SOJ, 300 mil wide standard
CERDIP, 300 mil wide standard
M
D
MB
Mil. Temp. with MIL-STD-883D
Class B compliance
ORDERING INFORMATION
168
169
170
ss
p
t
P4C
—
Temperature Range
Package Code
Speed (Access/Cycle Time)
Device Number
Static RAM Prefix
ss = Speed (access/cycle time in ns), e.g., 15, 20
p = Package code, i.e., P, S,D, J.
t = Temperature range, i.e., C, M, MB.
The P4C168 is also available per SMD #5962-86705
SELECTION GUIDE
The P4C168, P4C169 and P4C170 are available in the following temperature, speed and package options.
Temperature
Range
Speed (ns)
12
15
20
25
35
Package
Plastic DIP
Plastic SOIC†
Plastic SOJ††
-12PC
-12SC
-12JC
-15PC
-15SC
-15JC
-20PC
-20SC
-20JC
-25PC
-25SC
-25JC
N/A
N/A
N/A
Commercial
CERDIP
N/A
-20DM
-25DM
-35DM
N/A
Military Temp.
(P4C168 only)
CERDIP
Military
N/A
N/A
-20DMB -25DMB -35DMB
Processed*
(P4C168 only)
† P4C168 and P4C169 only.
†† P4C168
* Military temperature range with MIL-STD-883, Class B processing.
N/A = Not available
39
40
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