PJ13007 [ETC]
NPN Epitaxial Silicon Transistor; NPN外延硅晶体管
| 型号： | PJ13007 |
| 厂家： | 
ETC |
| 描述： | NPN Epitaxial Silicon Transistor |
| 文件： | 总2页 (文件大小：156K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PJ13007
NPN Epitaxial Silicon Transistor
HIGH VOLTAGE SWITCH MODE APPLICATION
•
High Speed Switching
Suitable for Swiching Regulator and Motor Control
TO-220
•
ABSOLUTE MAXIMUM RATINGS (Ta= 25℃)
Characteristic
Collector Base Voltage
Collector Emitter
Voltage
Emitter Base Voltage
Collector Current (DC)
Collector Current
(Pulse)
Symbol
VCBO
VCEO
Rating
700
400
Uint
V
V
Pin : 1. Base
2. Collector
3. Emitter
VEBO
Ic
Ic
9
8
16
V
A
A
ORDERING INFORMATION
Base Current
IB
Pc
Tj
4
80
150
A
Collector Dissipation
Junction Temperature
Storage Temperature
W
℃
℃
Device
Operating Temperature
Package
Tstg
-65 ~150
PJ13007CZ
-20℃～+85℃
TO-220
ELECTRICAL CHARACTERISTICS(Ta= 25℃)
Characteristic
*Collector Emitter Sustaining Voltage
Emitter Cutoff Current
Symbol
Test Condition
Ic = 10mA, IB = 0
VEB =9V, Ic=0
VCE =5V, Ic =2A
VCE =5V, Ic =5A
Min
400
Typ
Max
Unit
V
mA
VCEO SUS
(
)
IEBO
hFE
1
60
30
1
2
3
*DC Current Gain
8
5
*Collector Emitter Saturation Voltage
*Base Emitter Saturation Voltage
VCE (sat) Ic =2A, IB =0.4A
Ic =5A, IB =1A
V
V
V
V
V
Ic =8A, IB =2A
VBE (sat) Ic =2A, IB =0.4A
Ic =5A, IB =1A
1.2
1.6
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
COB
VCB =10V, f =0.1MHz
VCE =10V, Ic =0.5A
VCC =125V, Ic =5A
IB1 =IB2 =1A
110
pF
f
4
MHz
μS
μS
μS
T
t on
ts
tf
1.6
3
0.7
ꢀ
Pulse Test: PW≤300 μS, Duty Cycle ≤2 %
1-2
2002/01.rev.A
PJ13007
NPN Epitaxial Silicon Transistor
2-2
2002/01.rev.A
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