PL-IRM0101-1 [ETC]
RECEIVER MODULE; 接收模块型号: | PL-IRM0101-1 |
厂家: | ETC |
描述: | RECEIVER MODULE |
文件: | 总14页 (文件大小:1164K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PL- IRM0101- 3 RECEIVER MODULE
ABSOLUTE MAXIMUN RATING:(Ta=25ºC)
Test Conditions
PARAMETER
Symbol
Value
Unit
Supply Voltage
Output Voltage
4.5~5.5
V
V
-
Vcc
Vout
lo
4.5~5.5
-
Output Current
5
100
mA
ºC
-
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Power Consumption
Soldering Temperature
-
Ti
-25ºC to 85ºC
-25ºC to 85ºC
50
ºC
-
Tstg
Totr
Ptot
Tsd
ºC
-
mw
ºC
-
260
t
10s,1mm from case
ELECTRO-OPTICAL CHARACTERISTICS:(Ta=25ºC)
Symbol
Conditions
Parameter
Min
Max
Unit
Typ
1.5
-
mA
mA
Supply Current
1.2
1.0
Iin=0 uA
Vin=0 V
lcc
lin
0.9
-
Max. Input Current
Fin=37.9 KHz
Vin=30 uVp-p
AGC off
53
dB
Max. Voltage Gain
Frequency Range
52
Av
50
-
KHz
us
38.0
600
600
-
f
-
Fin=37.9 KHz burst wave
Vin=500 uVp-p
Fin=37.9 KHz burst wave
Vin=50 uVp-p
700
700
tPW1
tPW2
500
500
us
Output Pulse Width
Low Level
0.25
V
0.20
-
-
Vol
-
Output Voltage
Hight Level
5.5
-
V
m
Voh
d
4.5
-
Output Voltage
L-514EIR1C
If=300 mA
Arrival Distance
35
1.All dimension are in millimeters(inches).
2.Tolerance is 0.25mm(0.01")unless otherwise specified.
B-2
PL - IRM0204-A538 RECEIVER MODULE
ABSOLUTE MAXIMUN RATING:(Ta=25ºC)
Test Conditions
PARAMETER
Symbol
Value
Unit
Supply Voltage
Output Voltage
4.5~5.5
V
V
-
Vcc
Vout
lo
4.5~5.5
-
Output Current
5
100
mA
ºC
-
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Power Consumption
Soldering Temperature
-
Ti
-25ºC to 85ºC
-25ºC to 85ºC
50
ºC
-
Tstg
Totr
Ptot
Tsd
ºC
-
mw
ºC
-
260
t
10s,1mm from case
ELECTRO-OPTICAL CHARACTERISTICS:(Ta=25ºC)
Symbol
Conditions
Parameter
Min
Max
Unit
Typ
1.5
-
mA
mA
Supply Current
1.2
1
Iin=0 uA
Vin 0V ; Vs=5V
Tamb=25ºC
lcc
0.9
-
Max. Input Current
lin(max)
Fin=37.9 KHz
Vin=30 uVp-p
AGC off
53
dB
Max. Voltage Gain
Frequency Range
52
Av
50
-
KHz
us
38.0
600
600
-
f
-
Fin=37.9 KHz burst wave
Vin=500 uVp-p
Fin=37.9 KHz burst wave
Vin=50 uVp-p
700
700
tPW1
tPW2
500
500
Output Pulse Width
us
Low Level
Output Voltage
Hight Level
0.25
V
0.20
-
-
Vol
-
5.5
-
V
m
Voh
d
4.5
-
Output Voltage
L-514EIR1C
I =300 mA
Arrival Distance
35
1.All dimension are in millimeters(inches).
2.Tolerance is 0.25mm(0.01")unless otherwise specified.
B-3
PL - IRM0206-A538 RECEIVER MODULE
ABSOLUTE MAXIMUN RATING:(Ta=25ºC)
Test Conditions
PARAMETER
Symbol
Value
Unit
Supply Voltage
Output Voltage
4.5~5.5
V
V
-
Vcc
Vout
lo
4.5~5.5
-
Output Current
5
100
mA
ºC
-
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Power Consumption
Soldering Temperature
-
Ti
-25ºC to 85ºC
-25ºC to 85ºC
50
ºC
-
Tstg
Totr
Ptot
Tsd
ºC
-
mw
ºC
-
260
t
10s,1mm from case
ELECTRO-OPTICAL CHARACTERISTICS:(Ta=25ºC)
Symbol
Conditions
Parameter
Min
Max
Unit
Typ
1.5
-
mA
mA
Supply Current
1.2
1
Iin=0 uA
Vin 0V ; Vs=5V
Tamb=25
lcc
0.9
-
Max. Input Current
lin(max)
Fin=37.9 KHz
Vin=30 uVp-p
AGC off
53
dB
Max. Voltage Gain
Frequency Range
52
Av
50
-
KHz
us
38.0
600
600
-
f
-
Fin=37.9 KHz burst wave
Vin=500 uVp-p
Fin=37.9 KHz burst wave
Vin=50 uVp-p
700
700
tPW1
tPW2
500
500
Output Pulse Width
us
Low Level
Output Voltage
Hight Level
0.25
V
0.20
-
-
Vol
-
5.5
-
V
m
Voh
d
4.5
-
Output Voltage
L-514EIR1C
I =300 mA
Arrival Distance
35
1.All dimension are in millimeters(inches).
2.Tolerance is 0.25mm(0.01")unless otherwise specified.
B-4
PL - IRM0208-A538 RECEIVER MODULE
ABSOLUTE MAXIMUN RATING:(Ta=25ºC)
Test Conditions
PARAMETER
Symbol
Value
Unit
Supply Voltage
Output Voltage
4.5~5.5
V
V
-
Vcc
Vout
lo
4.5~5.5
-
Output Current
5
100
mA
ºC
-
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Power Consumption
Soldering Temperature
-
Ti
-25ºC to 85ºC
-25ºC to 85ºC
50
ºC
-
Tstg
Totr
Ptot
Tsd
ºC
-
mw
ºC
-
260
t
10s,1mm from case
ELECTRO-OPTICAL CHARACTERISTICS:(Ta=25ºC)
Symbol
Conditions
Parameter
Min
Max
Unit
Typ
1.5
-
mA
mA
Supply Current
1.2
1
Iin=0 uA
Vin 0V ; Vs=5V
Tamb=25
lcc
0.9
-
Max. Input Current
lin(max)
Fin=37.9 KHz
Vin=30 uVp-p
AGC off
53
dB
Max. Voltage Gain
Frequency Range
52
Av
50
-
KHz
us
38.0
600
600
-
f
-
Fin=37.9 KHz burst wave
Vin=500 uVp-p
Fin=37.9 KHz burst wave
Vin=50 uVp-p
700
700
tPW1
tPW2
500
500
Output Pulse Width
us
Low Level
Output Voltage
Hight Level
0.25
V
0.20
-
-
Vol
-
5.5
-
V
m
Voh
d
4.5
-
Output Voltage
L-514EIR1C
I =300 mA
Arrival Distance
35
1.All dimension are in millimeters(inches).
2.Tolerance is 0.25mm(0.01")unless otherwise specified.
B-5
L-31ROPT1XX 3.0mm PHOTOTRANSISTOR
ABSOLUTE MAXIMUN RATING:(Ta=25ºC)
PD (mw)
Part No.
V(BR)R (V)
Topr
Tstg
10
5
-35ºC to 85ºC
-35ºC to 85ºC
L-31ROPT1XX
Reverse break down
voltage
Operating Temperature
Range
Storage Temperature
Range
Power Dissipation
PARAMETER
Lead Soldering Temperature {1.6mm(0.063 inch)From Body}250ºC 5ºC For 3 Seconds
ELECTRO-OPTICAL CHARACTERISTICS:(Ta=25ºC)
tR/tF (uS)
MIN TYP MAX
lC (mA)
MIN TYP MAX
CCB (pF)
MIN TYP MAX
(nm)
MIN PEAK MAX
ICEO (nA)
MIN TYP MAX
VCE(s) (V)
MIN TYP MAX
BVCEO (V)
BVECO (V)
MIN TYP MAX MIN TYP MAX
Part No.
5
5
5
0.4
0.4
0.4
15/15
15/15
15/15
0.9 1.8
0.8 1.6
0.8 1.6
6.4
6.4
6.4
400
1050
30
30
30
L-31ROPT1C
100
100
100
900 940
800 870
L-31ROPT1D1
L-31ROPT1D2
f=1MHZ
VCB=3V
Ee=0mW/cm2
VCE=5V
IC=1mA
RL=1000
IC=100uA
Ee=0mW/cm2
VE=20V
Ee=0mW/cm2
IC=2mA
Ee=0.5mW/cm2
TEST
CONDITION
VCE=5V
Ee=0.1mW/cm2
IE=100uA
Ee=0mW/cm2
COLLECTOR-
EMITTER
SATURATION
VOLTAGE
COLLECTOR-
EMITTER
BREAKDOWN BREAKDOWN
VOLTAGE VOLTAGE
EMITTER-
COLLECTOR
COLLECTOR
DARK
ON STATE
COLLECTOR
CURRENT
COLLECTOR
-BASE
SPECTRAL
SENSITIVITY
RISE/FALL
TIME
PARAMETER
CURRENT
CAPACITANCE WAVELENGTH
D1,D2=BLACK
1.All dimension are in millimeters (inches).
2.Tolerance is 0.25 mm (0.01") unless otherwise specified.
B-6
L-32XOPT1XX 3.0mm PHOTOTRANSISTOR
ABSOLUTE MAXIMUN RATING:(Ta=25ºC)
PD (mw)
Part No.
V(BR)R (V)
Topr
Tstg
10
5
-35ºC to 85ºC
-35ºC to 85ºC
L-32XOPT1XX
Operating Temperature
Range
Storage Temperature
Range
Power Dissipation
PARAMETER
Reverse Voltage
Lead Soldering Temperature {1.6mm(0.063 inch)From Body}250ºC 5ºC For 3 Seconds
ELECTRO-OPTICAL CHARACTERISTICS:(Ta=25ºC)
BVCEO (V)
MIN TYP MAX
ICEO (nA)
MIN TYP MAX
VCE (s)(V)
tR/tF (uS)
MIN TYP MAX MIN TYP MAX
lC (mA)
MIN TYP MAX
(nm)
MIN TYP MAX
BVECO (V)
MIN TYP MAX
Part No.
5
5
100
100
0.4
0.4
15/15
15/15
0.2 0.6
900 940
900 940
30
30
L-32ROPT1D1
0.6 1.0
L-32AOPT1D1
VCE=5V
IC=1mA
RL=1000
TEST
CONDITION
IE=100uA
Ee=0mW/cm2
IC=2mA
Ee=0.5mW/cm2
IC=100uA
Ee=0mW/cm2
VE=20V
Ee=0mW/cm2
VCE=5V
Ee=0.1mW/cm2
COLLECTOR-
EMITTER
SATURATION
VOLTAGE
COLLECTOR-
EMITTER
BREAKDOWN
VOLTAGE
EMITTER-
COLLECTOR
BREAKDOWN
VOLTAGE
COLLECTOR
DARK
ON STATE
COLLECTOR
CURRENT
SPECTRAL
SENSITIVITY
WAVELENGTH
RISE/FALL
TIME
PARAMETER
CURRENT
D1,D2=BLACK
1.All dimension are in millimeters(inches).
2.Tolerance is 0.25mm(0.01")unless otherwise specified.
B-7
L-51ROPT1XX 5.0mm PHOTOTRANSISTOR
ABSOLUTE MAXIMUN RATING:(Ta=25ºC)
PD (mw)
Part No.
V(BR)R (V)
Topr
Tstg
10
5
-35ºC to 85ºC
-35ºC to 85ºC
L-51ROPT1XX
Reverse break down
voltage
Operating Temperature
Range
Storage Temperature
Range
Power Dissipation
PARAMETER
Lead Soldering Temperature {1.6mm(0.063 inch)From Body}250ºC 5ºC For 3 Seconds
ELECTRO-OPTICAL CHARACTERISTICS:(Ta=25ºC)
tR/tF (uS)
MIN TYP MAX
lC (mA)
MIN TYP MAX
CCB (pF)
MIN TYP MAX
(nm)
MIN PEAK MAX
ICEO (nA)
MIN TYP MAX
VCE(s) (V)
MIN TYP MAX
BVCEO (V)
BVECO (V)
MIN TYP MAX MIN TYP MAX
Part No.
5
5
5
0.4
0.4
0.4
15/15
15/15
15/15
1.8 2.4
1.7 2.2
1.7 2.2
6.4
6.4
6.4
400
1050
30
30
30
L-51ROPT1C
100
100
100
900 940
800 870
L-51ROPT1D1
L-51ROPT1D2
f=1MHZ
VCB=3V
Ee=0mW/cm2
VCE=5V
IC=1mA
RL=1000
TEST
CONDITION
IC=100uA
Ee=0mW/cm2
VE=20V
IC=2mA
VCE=5V
Ee=0.1mW/cm2
IE=100uA
Ee=0mW/cm2
Ee=0mW/cm2 Ee=0.5mW/cm2
COLLECTOR-
COLLECTOR
COLLECTOR-
EMITTER
BREAKDOWN BREAKDOWN
VOLTAGE VOLTAGE
EMITTER-
COLLECTOR
ON STATE
COLLECTOR
CURRENT
COLLECTOR
-BASE
SPECTRAL
SENSITIVITY
EMITTER
RISE/FALL
TIME
PARAMETER
DARK
SATURATION
CURRENT
VOLTAGE
CAPACITANCE WAVELENGTH
D1,D2=BLACK
1.All dimension are in millimeters (inches).
2.Tolerance is
0.25 mm (0.01") unless otherwise specified.
B-8
L-SB1R9PD1XX PHOTODIODE
ABSOLUTE MAXIMUN RATING:(Ta=25ºC)
PD (mw)
Part No.
V(BR)R (V)
Topr
Tstg
0.1
30
-35ºC to 85ºC
-35ºC to 85ºC
L-SB1R9PD1XX
Operating Temperature
Range
Storage Temperature
Range
Power Dissipation
PARAMETER
Reverse Voltage
Lead Soldering Temperature {1.6mm(0.063 inch)From Body}250ºC 5ºC For 3 Seconds
ELECTRO-OPTICAL CHARACTERISTICS:(Ta=25ºC)
ID (nA)
MIN TYP MAX
VOC (mV)
MIN TYP MAX
IL (uA)
tON/tOFF (nS)
MIN TYP MAX MIN TYP MAX
CT (pF)
MIN TYP MAX
(nm)
MIN PEAK MAX
V(BR) R (V)
MIN TYP MAX
Part No.
33 170
33 170
33 170
390
390
390
30 40
30 40
30 40
45/45
45/45
45/45
18
400
1050
30
30
30
L-SB1R9PD1C
5
5
5
18
18
900 940
800 870
L-SB1R9PD1D1
L-SB1R9PD1D2
f=1MHZ
VR=5V
VR=10V
Ee=0mW/cm2
VR=5V
Ee=0.1mW/cm2
VR=10V
RL=100
TEST
CONDITION
IR=100uA
Ee=0mW/cm2
=940nm
Ee=0.5mW/cm2
Ee=0mW/cm2
REVERSE
BREAKDOWN
VOLTAGE
OPEN
TURN-ON
TURN-OFF
TIME
SPECTRAL
REVERSE
DARK
LIGHTE
TOTAL
PARAMETER
CIRCUIT
VOLTAGE
SENSITIVITY
CURRENT
CAPACITANCE
WAVELENGTH
CURRENT
D1,D2=BLACK
1.All dimension are in millimeters (inches).
2.Tolerance is
0.25 mm (0.01") unless otherwise specified.
B-9
L-SC1R9PD1XX PHOTODIODE
ABSOLUTE MAXIMUN RATING:(Ta=25ºC)
PD (mw)
Part No.
V(BR)R (V)
Topr
Tstg
0.1
30
-35ºC to 85ºC
-35ºC to 85ºC
L-SC1R9PD1XX
Operating Temperature
Range
Storage Temperature
Range
Power Dissipation
PARAMETER
Reverse Voltage
Lead Soldering Temperature {1.6mm(0.063 inch)From Body}250ºC 5ºC For 3 Seconds
ELECTRO-OPTICAL CHARACTERISTICS:(Ta=25ºC)
ID (nA)
MIN TYP MAX
VOC (mV)
MIN TYP MAX
IL (uA)
tON/tOFF (nS)
MIN TYP MAX MIN TYP MAX
CT (pF)
MIN TYP MAX
(nm)
MIN PEAK MAX
V(BR) R (V)
MIN TYP MAX
Part No.
33 170
33 170
33 170
390
390
390
30 40
30 40
30 40
45/45
45/45
45/45
18
400
1050
30
30
30
L-SC1R9PD1C
5
5
5
18
18
900 940
800 870
L-SC1R9PD1D1
L-SC1R9PD1D2
f=1MHZ
VR=5V
VR=10V
Ee=0mW/cm2
VR=5V
Ee=0.1mW/cm2
VR=10V
RL=100
TEST
CONDITION
IR=100uA
Ee=0mW/cm2
=940nm
Ee=0.5mW/cm2
Ee=0mW/cm2
REVERSE
BREAKDOWN
VOLTAGE
OPEN
TURN-ON
TURN-OFF
TIME
SPECTRAL
REVERSE
DARK
LIGHT
TOTAL
PARAMETER
CIRCUIT
VOLTAGE
SENSITIVITY
CURRENT
CAPACITANCE
WAVELENGTH
CURRENT
D1,D2=BLACK
1.All dimension are in millimeters (inches).
2.Tolerance is 0.25 mm (0.01") unless otherwise specified.
B-10
L-31XXIR1XX 3.0mm INFRARED EMITTING DIODE
ABSOLUTE MAXIMUN RATING:(Ta=25ºC)
PD (mw)
Part No.
VR (V)
Topr
Tstg
100
5
-35ºC to 85ºC
-35ºC to 85ºC
L-31XXIR1XX
Operating Temperature
Range
Storage Temperature
Range
Reverse Voltage
Power Dissipation
PARAMETER
Lead Soldering Temperature {1.6mm(0.063 inch)From Body}250ºC 5ºC For 3 Seconds
ELECTRO-OPTICAL CHARACTERISTICS:(Ta=25ºC)
VF (V)
TYP MAX
IR ( A)
TYP MAX
p (nm)
TYP MAX
le (mw/sr)
TYP
2
MIN
1/2 (dge)
TYP MAX MIN
Part No.
MIN
MIN
MIN
MAX
1.2
1.4
7
L-314EIR1C
10
10
10
10
940
940
940
940
20
14
1.6
1.6
1.6
1.6
1.6
1.2
1.4
L-315EIR1C
L-316EIR1C
L-314EIR1BC
25
30
20
6
6
5
12
12
10
1.2
1.4
1.2
1.4
1.2
1.4
L-315EIR1BC
L-316EIR1BC
L-318EIR1BC
10
10
10
940
940
940
25
30
40
6
6
6
12
12
10
1.2
1.4
1.6
1.6
1.2
1.4
TEST
CONDITION
IF=20mA
IF=100mA
VR=5V
IF=20mA
IF=20mA
IF=20mA
BC=BLUE CLEAR
1.All dimension are in millimeters (inches).
2.Tolerance is
0.25 mm (0.01") unless otherwise specified.
B-11
L-32XXIRXX 3.0mm INFRARED EMITTING DIODE
ABSOLUTE MAXIMUN RATING:(Ta=25ºC)
PD (mw)
Part No.
VR (V)
Topr
Tstg
100
5
-35ºC to 85ºC
-35ºC to 85ºC
L-32XXIRXX
Operating Temperature
Range
Storage Temperature
Range
Reverse Voltage
Power Dissipation
PARAMETER
Lead Soldering Temperature {1.6mm(0.063 inch)From Body}250ºC 5ºC For 3 Seconds
ELECTRO-OPTICAL CHARACTERISTICS:(Ta=25ºC)
VF (V)
TYP MAX
IR ( A)
TYP MAX
p (nm)
TYP MAX
le (mw/sr)
TYP
2
MIN
1/2 (dge)
TYP MAX MIN
Part No.
MIN
MIN
MIN
MAX
-
-
1.2
1.4
7.5
35
L-327EIR1C
-
-
-
-
10
10
10
-
940
940
940
-
-
-
15
-
1.6
1.6
1.6
-
-
1.2
1.4
L-327EIR1BC
L-32AEIR1C
-
-
-
-
35
50
7.5
6
15
10
-
-
-
-
1.2
1.4
TEST
CONDITION
IF=20mA
IF=100mA
VR=5V
IF=20mA
IF=20mA
IF=20mA
BC=BLUE CLEAR
1.All dimension are in millimeters (inches).
2.Tolerance is
0.25 mm (0.01") unless otherwise specified.
B-12
L-51XXIR1C 5.0mm INFRARED EMITTING DIODE
ABSOLUTE MAXIMUN RATING:(Ta=25ºC)
PD (mw)
Part No.
VR (V)
Topr
Tstg
100
5
-35ºC to 85ºC
-35ºC to 85ºC
L-51XXIR1C
Operating Temperature
Range
Storage Temperature
Range
Reverse Voltage
Power Dissipation
PARAMETER
Lead Soldering Temperature {1.6mm(0.063 inch)From Body}250ºC 5ºC For 3 Seconds
ELECTRO-OPTICAL CHARACTERISTICS:(Ta=25ºC)
VF (V)
TYP MAX
IR ( A)
TYP MAX
p (nm)
TYP MAX
le (mw/sr)
TYP
2
MIN
1/2 (dge)
TYP MAX MIN
Part No.
MIN
MIN
MIN
MAX
1.2
1.4
L-514EIR1C
10
10
10
10
940
940
940
940
20
25
30
35
17
14
12
10
30
1.6
1.6
1.6
1.6
1.2
1.4
L-515EIR1C
L-516EIR1C
L-517EIR1C
25
23
20
1.2
1.4
1.2
1.4
1.2
1.4
L-518EIR1C
L-51AEIR1C
L-514CIR1C
10
10
10
940
940
940
40
50
20
8
6
18
12
25
1.6
1.6
1.8
1.2
1.4
1.3
1.6
13
TEST
CONDITION
IF=20mA
IF=100mA
VR=5V
IF=20mA
IF=20mA
IF=20mA
1.All dimension are in millimeters (inches).
2.Tolerance is
0.25 mm (0.01") unless otherwise specified.
B-13
L-51XXIR1BC 5.0mm INFRARED EMITTING DIODE
ABSOLUTE MAXIMUN RATING:(Ta=25ºC)
PD (mw)
Part No.
VR (V)
Topr
Tstg
100
5
-35ºC to 85ºC
-35ºC to 85ºC
L-51XXIR1BC
Operating Temperature
Range
Storage Temperature
Range
Reverse Voltage
Power Dissipation
PARAMETER
Lead Soldering Temperature {1.6mm(0.063 inch)From Body}250ºC 5ºC For 3 Seconds
ELECTRO-OPTICAL CHARACTERISTICS:(Ta=25ºC)
VF (V)
TYP MAX
IR ( A)
TYP MAX
p (nm)
TYP MAX
le (mw/sr)
TYP
2
MIN
1/2 (dge)
TYP MAX MIN
Part No.
MIN
MIN
MIN
MAX
1.2
1.4
L-514EIR1BC
10
10
10
10
940
940
940
940
20
25
30
35
17
14
12
10
30
16
1.6
1.6
1.6
1.2
1.4
L-515EIR1BC
L-516EIR1BC
L-517EIR1BC
25
23
20
1.2
1.4
1.2
1.4
1.2
1.4
L-518EIR1BC
L-51AEIR1BC
L-514CIR1BC
10
10
10
940
940
940
40
50
20
8
6
18
12
25
1.6
1.6
1.8
1.2
1.4
1.3
1.6
13
TEST
CONDITION
IF=20mA
IF=100mA
VR=5V
IF=20mA
IF=20mA
IF=20mA
BC=BLUE CLEAR
1.All dimension are in millimeters (inches).
2.Tolerance is
0.25 mm (0.01") unless otherwise specified.
B-14
相关型号:
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