PS2732-4-V [ETC]

DARLINGTON-NPN-OUTPUT DC-INPUT OPTOCOUPLER ; 达林顿NPN输出DC- INPUT光电耦合器\n
PS2732-4-V
型号: PS2732-4-V
厂家: ETC    ETC
描述:

DARLINGTON-NPN-OUTPUT DC-INPUT OPTOCOUPLER
达林顿NPN输出DC- INPUT光电耦合器\n

光电 输出元件 输入元件
文件: 总12页 (文件大小:88K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
PHOTOCOUPLER  
PS2732-1,-2,-4, PS2733-1,-2,-4  
HIGH COLLECTOR TO EMITTER VOLTAGE  
NEPOCTM Series−  
SOP MULTI PHOTOCOUPLER  
DESCRIPTION  
The PS2732-1, -2, -4 and PS2733-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode  
and an NPN silicon darlington-connected phototransistor.  
This package is SOP (Small Outline Package) type and has shield effect to cut off ambient light.  
It is designed for high density mounting applications.  
FEATURES  
High isolation voltage (BV = 2 500 Vr.m.s.)  
High collector to emitter voltage (VCEO = 300 V: PS2732-1, -2, -4)  
(VCEO = 350 V: PS2733-1, -2, -4)  
SOP (Small Outline Package) type  
High current transfer ratio (CTR = 4 000 % TYP.)  
Ordering number of taping product (only 1-channel type) : PS2732-1-E3, E4, F3, F4, PS2733-1-E3, E4, F3, F4  
UL approved: File No. E72422 (S)  
VDE0884 approved (Option)  
APPLICATIONS  
Hybrid IC  
Telephone/Telegraph Receiver  
FAX  
The information in this document is subject to change without notice.  
Document No. P11312EJ3V0DS00 (3rd edition)  
Date Published December 1997 NS CP (K)  
Printed in Japan  
The mark shows major revised points.  
1994  
©
PS2732-1,-2,-4,PS2733-1,-2,-4  
PACKAGE DIMENSIONS (in millimeters)  
PS2732-1  
PS2733-1  
4.5 MAX.  
TOP VIEW  
4
1
3
1. Anode  
2. Cathode  
3. Emitter  
4. Collector  
2
7.0±0.3  
4.4  
1.3  
2.54  
1.2 MAX.  
0.25 M  
0.5±0.3  
+0.10  
0.4  
–0.05  
PS2732-2  
PS2733-2  
9.3 MAX.  
TOP VIEW  
8
1
7
2
6
3
5
1. 3. Anode  
2. 4. Cathode  
5. 7. Emitter  
6. 8. Collector  
4
7.0±0.3  
4.4  
1.3  
0.5±0.3  
2.54  
1.2 MAX.  
+0.10  
0.4  
0.25 M  
–0.05  
PS2732-4  
PS2733-4  
TOP VIEW  
16 15 14 13 12 11 10  
19.46 MAX.  
9
8
1
2
3
4
5
6
7
1. 3. 5. 7. Anode  
2. 4. 6. 8. Cathode  
9. 11. 13. 15. Emitter  
10. 12. 14. 16. Collector  
7.0±0.3  
1.3  
4.4  
0.5±0.3  
2.54  
+0.10  
1.2 MAX.  
0.4  
0.25 M  
–0.05  
2
PS2732-1,-2,-4,PS2733-1,-2,-4  
ORDERING INFORMATION  
Part Number  
Package  
Safety Standard Approval  
PS2732-1, PS2733-1  
4-pin SOP  
8-pin SOP  
16-pin SOP  
4-pin SOP  
8-pin SOP  
16-pin SOP  
Standard products  
• UL approved  
PS2732-2, PS2733-2  
PS2732-4, PS2733-4  
PS2732-1-V, PS2733-1-V  
PS2732-2-V, PS2733-2-V  
PS2732-4-V, PS2733-4-V  
VDE0884 approved products (Option)  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified)  
Parameter  
Symbol  
Ratings  
Unit  
PS2732-1  
PS2733-1 PS2732-2,-4 PS2733-2,-4  
Diode  
Forward Current (DC)  
Reverse Voltage  
IF  
VR  
50  
6
mA  
V
Power Dissipation Derating  
Power Dissipation  
PD/°C  
PD  
0.8  
80  
1
mW/°C  
mW/ch  
A
Peak Forward Current*1  
IFP  
Transistor Collector to Emitter Voltage  
Emitter to Collector Voltage  
Collector Current  
VCEO  
VECO  
IC  
300  
350  
300  
350  
V
0.3  
V
150  
mA/ch  
mW/°C  
mW/ch  
Vr.m.s.  
°C  
Power Dissipation Derating  
PC/°C  
PC  
1.5  
1.2  
Power Dissipation  
150  
120  
Isolation Voltage*2  
BV  
2 500  
Operating Ambient Temperature  
Storage Temperature  
TA  
–55 to +100  
–55 to +150  
Tstg  
°C  
*1 PW = 100 µs, Duty Cycle = 1 %  
*2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output  
3
PS2732-1,-2,-4,PS2733-1,-2,-4  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
Parameter  
Symbol  
VF  
Conditions  
MIN.  
TYP.  
1.15  
MAX.  
1.4  
5
Unit  
V
Diode  
Forward Voltage  
Reverse Current  
Terminal Capacitance  
IF = 10 mA  
VR = 5 V  
IR  
µA  
pF  
nA  
Ct  
V = 0 V, f = 1 MHz  
30  
Collector to Emitter  
Current  
Transistor  
Coupled  
ICEO  
IF = 0 mA, VCE = 300 V  
400  
1.0  
Current Transfer Ratio  
CTR  
IF = 1 mA, VCE = 2 V  
IF = 1 mA, IC = 2 mA  
1 500  
1011  
4 000  
%
V
Collector Saturation  
Voltage  
VCE (sat)  
Isolation Resistance  
Isolation Capacitance  
Rise Time *1  
RI-O  
CI-O  
tr  
VI-O = 1 kVDC  
V = 0 V, f = 1 MHz  
0.4  
100  
100  
pF  
µs  
VCC = 5 V, IC = 10 mA, RL = 100 Ω  
Fall Time *1  
tf  
*1 Test circuit for switching time  
Pulse Input  
V
CC  
PW = 1 ms  
Duty cycle = 1/10  
I
F
V
OUT  
50  
RL = 100 Ω  
4
PS2732-1,-2,-4,PS2733-1,-2,-4  
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)  
DIODE POWER DISSIPATION vs.  
AMBIENT TEMPERATURE  
TRANSISTOR POWER DISSIPATION vs.  
AMBIENT TEMPERATURE  
200  
100  
75  
150  
100  
50  
PS2732-1,  
PS2733-1  
1.5 mW/˚C  
50  
PS2732-2,-4,  
PS2733-2,-4  
1.2 mW/˚C  
25  
0
25  
50  
75  
(˚C)  
100  
0
25  
50  
75  
100  
Ambient Temperature T  
A
(˚C)  
Ambient Temperature T  
A
FORWARD CURRENT vs.  
FORWARD VOLTAGE  
COLLECTOR TO EMITTER DARK  
CURRENT vs. AMBIENT TEMPERATURE  
10 000  
100  
10  
V
CE = 300 V  
1 000  
T
A
= +100 ˚C  
+75 ˚C  
+50 ˚C  
100  
10  
1
1
+25 ˚C  
0 ˚C  
–25 ˚C  
–55 ˚C  
0.1  
0.1  
0.01  
–25  
25  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
–50  
0
50  
75  
100  
Forward Voltage V  
F
(V)  
Ambient Temperature T (˚C)  
A
COLLECTOR CURRENT vs.  
COLLECTOR TO EMITTER VOLTAGE  
COLLECTOR CURRENT vs.  
COLLECTOR SATURATION VOLTAGE  
160  
140  
120  
100  
80  
1 000  
5 mA  
4.5 mA  
4 mA  
I
F
= 5 mA  
3.5 mA  
100  
3 mA  
2 mA  
1 mA  
2.5 mA  
2 mA  
0.5 mA  
10  
1
1.5 mA  
1 mA  
60  
40  
20  
I
F
= 0.5 mA  
4
0.1  
3
5
0.5 0.6 0.7 0.8 0.9 1.0  
0
1
2
1.1 1.2  
Collector to Emitter Voltage VCE (V)  
Collector Saturation Voltage VCE (sat) (V)  
5
PS2732-1,-2,-4,PS2733-1,-2,-4  
NORMALIZED CURRENT TRANSFER  
RATIO vs. AMBIENT TEMPERATURE  
CURRENT TRANSFER RATIO vs.  
FORWARD CURRENT  
5 000  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
Sample A  
Sample B  
V
CE = 2 V  
4 000  
3 000  
2 000  
1 000  
0
Normalized to 1.0  
at T = 25 ˚C,  
A
IF = 1 mA, VCE = 2 V  
–50  
–25  
0
25  
50  
75  
0.1  
0.5  
1
5
10  
20  
100  
Ambient Temperature T  
A
(˚C)  
Forward Current I  
F
(mA)  
SWITCHING TIME vs.  
LOAD RESISTANCE  
FREQUENCY RESPONSE  
300  
VCC = 10 V,  
t
r
R = 10  
L
I
C
= 10 mA  
0
–5  
100  
50  
µ
100 Ω  
1 kΩ  
t
d
–10  
–15  
–20  
–25  
–30  
t
f
10  
5
V
CE = 4 V,  
I
C
= 10 mA,  
V
in = 0.1 Vp-p  
1 k  
1
t
s
µF  
47  
1
V
out  
Vin  
RL  
20  
2 k  
50  
100  
500  
()  
1 k  
0.01  
0.1  
1
10  
100  
Load Resistance R  
L
Frequency f (kHz)  
LONG TERM CTR DEGRADATION  
1.2  
1.0  
0.8  
0.6  
0.4  
I = 1 mA  
F
T = 25 ˚C  
A
T = 60 ˚C  
A
0.2  
0
102  
105  
106  
10  
104  
103  
Time (Hr)  
Remark The measurement of TYPICAL CHARACTERISTICS are only for reference, not guaranteed.  
6
PS2732-1,-2,-4,PS2733-1,-2,-4  
TAPING SPECIFICATIONS (in millimeters)  
Outline and Dimensions (Tape)  
2.0±0.1  
4.0±0.1  
2.4±0.1  
1.55±0.1  
0.3  
1.55±0.1  
4.6±0.1  
8.0±0.1  
Tape Direction  
PS2732-1-E4, F4  
PS2733-1-E4, F4  
PS2732-1-E3, F3  
PS2733-1-E3, F3  
Outline and Dimensions (Reel)  
1.5±0.1  
1.5±0.1  
φ
φ
φ
2.0±0.5  
1.5±0.5  
φ
φ
6.0±1  
˚
+2.0  
12.4  
–0.0  
18.4 MAX.  
Packing: PS2732-1-E3, E4, PS2733-1-E3, E4 900 pcs/reel  
PS2732-1-F3, F4, PS2733-1-F3, F4 3 500 pcs/reel  
7
PS2732-1,-2,-4,PS2733-1,-2,-4  
RECOMMENDED SOLDERING CONDITIONS  
(1) Infrared reflow soldering  
• Peak reflow temperature  
• Time of temperature higher than 210 °C  
• Number of reflows  
235 °C (package surface temperature)  
30 seconds or less  
Three  
• Flux  
Rosin flux containing small amount of chlorine (The flux with a  
maximum chlorine content of 0.2 Wt % is recommended.)  
Recommended Temperature Profile of Infrared Reflow  
(heating)  
to 10 s  
235 ˚C (peak temperature)  
210 ˚C  
to 30 s  
120 to 160 ˚C  
60 to 90 s  
(preheating)  
Time (s)  
Caution Please avoid to removed the residual flux by water after the first reflow processes.  
Peak temperature 235 ˚C or below  
(2) Dip soldering  
• Temperature  
260 °C or below (molten solder temperature)  
• Time  
10 seconds or less  
• Number of times  
• Flux  
One  
Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of  
0.2 Wt % is recommended.)  
8
PS2732-1,-2,-4,PS2733-1,-2,-4  
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)  
Parameter  
Application classification (DIN VDE 0109)  
Symbol  
Speck  
Unit  
for rated line voltages 150 Vr.m.s.  
IV  
III  
for rated line voltages 300 Vr.m.s.  
Climatic test class (DIN IEC 68 Teil 1/09.80)  
Dielectric strength  
55/100/21  
Maximum operating isolation voltage  
Test voltage (partial discharge test, procedure a for type test and random test)  
Upr = 1.2 × UIORM, Pd < 5 pC  
UIORM  
Upr  
710  
850  
Vpeak  
Vpeak  
Test voltage (partial discharge test, procedure b for random test)  
Upr = 1.6 × UIORM, Pd < 5 pC  
Upr  
1 140  
Vpeak  
Highest permissible overvoltage  
Degree of pollution (DIN VDE 0109)  
Clearance distance  
UTR  
4 000  
Vpeak  
2
> 5  
mm  
mm  
Creepage distance  
> 5  
Comparative tracking index (DIN IEC 112/VDE 0303 part 1)  
Material group (DIN VDE 0109)  
Storage temperature range  
CTI  
175  
III a  
Tstg  
TA  
–55 to +150  
–55 to +100  
°C  
°C  
Operating temperature range  
Isolation resistance, minimum value  
VIO = 500 V dc at TA = 25 °C  
Ris MIN.  
Ris MIN.  
1012  
1011  
VIO = 500 V dc at TA MAX. at least 100 °C  
Safety maximum ratings  
(maximum permissible in case of fault, see thermal derating curve)  
Package temperature  
Tsi  
Isi  
150  
300  
500  
°C  
mA  
mW  
Current (input current IF, Psi = 0)  
Power (output or total power dissipation)  
Isolation resistance  
Psi  
VIO = 500 V dc at TA = 175 °C (Tsi)  
Ris MIN.  
109  
9
PS2732-1,-2,-4,PS2733-1,-2,-4  
[MEMO]  
10  
PS2732-1,-2,-4,PS2733-1,-2,-4  
[MEMO]  
11  
PS2732-1,-2,-4,PS2733-1,-2,-4  
CAUTION  
Within this device there exists GaAs (Gallium Arsenide) material which is a  
harmful substance if ingested. Please do not under any circumstances break the  
hermetic seal.  
NEPOC is a trademark of NEC Corporation.  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this  
document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from use of a device described herein or any other liability arising  
from use of such device. No license, either express, implied or otherwise, is granted under any patents,  
copyrights or other intellectual property rights of NEC Corporation or others.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on  
a customer designated "quality assurance program" for a specific application. The recommended applications  
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each  
device before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact an NEC sales representative in advance.  
Anti-radioactive design is not implemented in this product.  
M4 96. 5  

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