Q62702F1591 [ETC]
TRANSISTOR R.F SOT343 ; 晶体管R.F SOT343\n
| 型号： | Q62702F1591 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR R.F SOT343
|
| 文件： | 总8页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SIEGET 25
BFP 420
NPN Silicon RF Transistor
3
• For high gain low noise amplifiers
• For oscillators up to 10 GHz
4
• Noise figure F = 1.05 dB at 1.8 GHz
outstanding G = 20 dB at 1.8 GHz
ms
• Transition frequency f = 25 GHz
2
T
• Gold metalization for high reliability
• SIEGET 25 - Line
VPS05605
1
Siemens Grounded Emitter Transistor
25 GHz f - Line
T
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration
Package
BFP 420 AMs
Q62702-F1591
1 = B
2 = E
3 = C
4 = E
SOT-343
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
4.5
15
V
V
V
V
CEO
CBO
EBO
1.5
35
mA
I
I
C
Base current
3
B
160
150
mW
Total power dissipation, T ≤ 107 °C
P
T
T
T
S
tot
j
Junction temperature
Ambient temperature
°C
-65 ...+150
-65 ...+150
A
Storage temperature
Thermal Resistance
stg
1)
Junction - soldering point
K/W
R
≤ 270
thJS
1) TS is measured on the collector lead at the soldering point to the pcb
Semiconductor Group
1
Jul-14-1998
1998-11-01
Semiconductor Group
1
BFP 420
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
typ. max.
Unit
min.
DC characteristics
4.5
-
5
-
6.5
V
Collector-emitter breakdown voltage
V
(BR)CEO
I = 1 mA, I = 0
C
B
200 nA
Collector-base cutoff current
= 5 V, I = 0
I
I
CBO
V
CB
E
-
-
35
µA
-
Emitter-base cutoff current
= 1.5 V, I = 0
EBO
V
EB
C
50
80
150
DC current gain
I = 20 mA, V = 4 V
h
FE
C
CE
AC characteristics
20
-
25
-
GHz
Transition frequency
f
T
I = 30 mA, V = 3 V, f = 2 GHz
C
CE
0.15
0.41
0.55
1.05
0.24 pF
Collector-base capacitance
= 2 V, f = 1 MHz
C
cb
V
CB
-
-
Collector-emitter capacitance
= 2 V, f = 1 MHz
C
ce
V
CE
-
-
Emitter-base capacitance
= 0.5 V, f = 1 MHz
C
eb
V
EB
-
1.4 dB
Noise figure
F
I = 5 mA, V = 2 V, Z = Z
,
C
CE
S
Sopt
f = 1.8 GHz
1)
-
14
-
20
17
22
12
-
Power gain
G
ms
I = 20 mA, V = 2 V, Z = Z
, Z = Z
Lopt
,
C
CE
S
Sopt
L
f = 1.8 GHz
2
-
-
-
dB
Insertion power gain
I = 20 mA, V = 2 V, f = 1.8 GHz,
|S |
21
C
CE
Z = Z = 50Ω
S
L
dBm
Third order intersept point
IP
3
I = 20 mA, V = 2 V, Z =Z
, Z =Z
,
C
CE
S
Sopt
L
Lopt
f = 1.8 GHz
-
1dB Compression point
I = 20 mA, V = 2 V, f = 1.8 GHz,
P
-1dB
C
CE
Z =Z
, Z =Z
L Lopt
S
Sopt
1) G
= |S / S
21 12
|
ms
Semiconductor Group
Semiconductor Group
2
Jul-14-1998
1998-11-01
2
BFP 420
Common Emitter S-Parameters
f
S
S
S
S
11
ANG
21
ANG
12
ANG
22
ANG
GHz
MAG
MAG
MAG
MAG
V
CE
= 2V, I = 20mA
C
0.01
0.1
0.5
1
0.543
-2.5
36.88
35.4
22.87
13.46
6.93
4.59
3.339
2.15
1.46
1.2
178.1
164.4
120.8
96.3
0.0009
0.0075
0.0272
0.0398
0.062
0.09
0.115
0.156
0.172
0.174
0.172
95.8
79.3
58.7
55.2
53.5
48.6
40.5
25.3
5.4
0.96
-0.6
-12.3
-45.2
-60.3
-77.1
-96.7
-144.5
144.1
101.3
86.1
0.538
0.448
0.417
0.437
0.472
0.53
0.617
0.73
0.788
0.82
-25.1
-99.3
-143.6
176.2
152.8
133.3
109.1
82.5
0.946
0.633
0.399
0.227
0.134
0.109
0.136
0.229
0.319
0.405
2
71.5
3
4
6
8
54.4
38.9
12.9
-16.8
-30.4
-39.5
9
72.6
67
-5
10
1
-11.3
78.6
Common Emitter Noise Parameters
1)
1)
2)
2 2)
f
F
G
Γ
R
r
-
F
|S |
min
dB
a
opt
N
n
50Ω
21
GHz
dB
MAG
ANG
Ω
dB
dB
V
= 2V, I = 5mA
C
CE
0.9
1.8
2.4
3
4
5
0.9
1.05
1.25
1.38
1.55
1.75
2.2
20.5
15.2
13
12.1
10.3
8.6
0.19
0.11
0.11
0.19
0.28
0.37
0.44
30
64
8.7
7.5
7
6.5
7
0.17
0.15
0.14
0.13
0.14
0.2
1.02
1.11
1.32
1.48
1.83
2.2
20.3
15.8
13.5
11.6
9.1
116
165
-155
-130
-117
10
15
7
5.3
6
6.4
0.3
3.3
1) Input matched for minimum noise figure, output for maximum gain
2) Z = Z = 50Ω
S L
For more and detailed S- and Noise-parameters please contact your local Siemens
distributor or sales office to obtain a Siemens Application Notes CD-ROM or see Internet:
http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group
3
Jul-14-1998
1998-11-01
Semiconductor Group
3
BFP 420
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
0.20045
28.383
2.0518
19.705
1.1724
8.5757
1.8063
6.7661
1
aA
V
-
BF =
72.534
0.48731
7.8287
0.69141
3.4849
0.31111
0.8051
0.42199
0
-
NF =
1.2432
19.049
1.3325
-
VAF =
NE =
IKF =
BR =
IKR =
RB =
A
-
ISE =
NR =
ISC =
IRB =
RC =
pA
-
VAR =
NC =
RBM =
CJE =
TF =
V
-
A
0.019237
0.72983
0.10105
0.46576
0.23794
234.53
A
mA
Ω
RE =
Ω
fF
ps
mA
V
Ω
-
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
V
MJE =
VTF =
CJC =
-
V
fF
-
ITF =
VJC =
TR =
deg
0.81969
2.3249
0
0.30232
0
-
XCJC = 0.3
ns
-
F
-
VJS =
EG =
TNOM
0.75
V
eV
K
MJS =
XTI =
0
1.11
300
3
-
0.73234
-
C’-E’-Diode Data (Berkley-SPICE 2G.6 Syntax) :
IS = 3.5 fA N = 1.02
-
RS =
10
Ω
All parameters are ready to use, no scalling is necessary
Package Equivalent Circuit:
L =
0.47
0.53
0.23
0.05
0.56
0.58
136
6.9
nH
nH
nH
nH
nH
nH
fF
BI
CCB
L
=
BO
L =
EI
L BO
L BI
L CI
L CO
B’
Transistor
Chip
C’
B
C
L
=
EO
C’-E’-
Diode
E’
L =
CI
CBE
CCE
L
=
=
=
=
CO
L EI
C
C
C
BE
CB
fF
L EO
134
fF
CE
EHA07389
E
Valid up to 6GHz
The SOT-343 package has two emitter leads. To avoid high complexity of the package equivalentcircuit,
both leads are combined in one electrical connection.
Extracted on behalf of SIEMENS Small Signal Semiconductors by:
Institut für Mobil-und Satellitentechnik (IMST)
1996 SIEMENS AG
For examples and ready to use parameters please contact your local Siemens distributor or salesoffice to
obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group
4
Jul-14-1998
1998-11-01
Semiconductor Group
4
BFP 420
For non-linear simulation:
• Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.
• If you need simulation of thereverse characteristics, add the diode with the
C’-E’- diode data between collector and emitter.
• Simulation of package is not necessary for frequenties < 100MHz.
For higher frequencies add the wiring of package equivalent circuit around the
non-linear transistor and diode model.
Note:
• This transistor is constructed in a common emitter configuration. This feature causes
an additional reverse biased diode between emitter and collector, which does not
effect normal operation.
C
B
E
E
EHA07307
Transistor Schematic Diagram
The common emitter configuration shows the following advantages:
• Higher gain because of lower emitter inductance.
• Power is dissipated via the grounded emitter leads, because the chip is mounted
on copper emitter leadframe.
Please note, that the broadest lead is the emitter lead.
The AC characteristics are verified by random sampling.
Semiconductor Group
5
Jul-14-1998
1998-11-01
Semiconductor Group
5
BFP 420
Total power dissipation P = f (T *, T )
Transition frequency f = f (I )
tot
A
S
T
C
* Package mounted on epoxy
f = 2 GHz
V
= parameter in V
CE
200
30
GHz
mW
2 to 4
1.5
1
160
24
22
20
18
16
14
12
10
8
P
tot
f
T
140
120
100
80
0.75
T
S
T
A
0.5
60
40
6
4
20
2
0
0
°C
mA
0
20
40
60
80
100 120
150
0
5
10
15
20
25
30
40
T ,T
A
I
C
S
Permissible Pulse Load
Permissible Pulse Load R
= f (t )
p
thJS
P
/P
= f (t )
totmax totDC
p
10 3
10 1
P
max
/ P
K/W
R
thJS
DC
D = 0
0.005
0.01
0.02
0.05
0.1
10 2
-
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
0.2
0.5
10 1
10 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
10 0
s
s
t
t
p
p
Semiconductor Group
Semiconductor Group
6
Jul-14-1998
1998-11-01
6
BFP 420
2
Power gain G , G , |S | = f ( f )
Power gain G , G = f (I )
ma ms C
ma
ms
21
V
= 2V, I = 20 mA
V
= 2V
CE
CE
C
f = parameter in GHz
44
30
dB
dB
0.9
1.8
36
32
28
24
20
16
12
8
24
G
G
22
G
20
18
16
14
12
10
8
ms
2.4
3
4
5
6
2
|
|S
21
G
ma
6
4
4
2
0
0
GHz
mA
0.0
1.0
2.0
3.0
4.0
6.0
0
4
8
12 16 20 24 28 32
40
f
I
C
Power gain G , G = f (V )
Collector-base capacitance C = f (V )
ma
ms
CE
cb
CB
I = 20 mA
V
= 0, f = 1MHz
BE
C
f = parameter in GHz
0.30
30
dB
0.9
1.8
pF
24
G
C
cb
22
0.20
0.15
0.10
0.05
0.00
20
18
16
14
12
10
8
2.4
3
4
5
6
6
4
2
0
V
V
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
4.5
0
1
2
4
V
CE
V
CB
Semiconductor Group
Semiconductor Group
7
Jul-14-1998
1998-11-01
7
BFP 420
Noise figure F = f (I )
Noise figure F = f (I )
C
C
V
= 2 V, Z = Z
V
= 2 V, f = 1.8 GHz
CE
S
Sopt
CE
4.0
3.0
dB
dB
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.0
1.5
1.0
0.5
0.0
F
F
ZS = 50 Ohm
ZS = ZSopt
f = 6 GHz
f = 5 GHz
f = 4 GHz
f = 3 GHz
f = 2.4 GHz
f = 1.8 GHz
f = 0.9 GHz
mA
mA
0
4
8
12 16 20 24 28 32
38
0
4
8
12 16 20 24 28
36
I
I
C
C
Source impedance for min.
Noise figure F = f ( f )
Noise Figure versus Frequency
V
= 2 V, Z = Z
CE
S
Sopt
V
= 2 V, I = 5 mA / 20 mA
CE
C
3.0
+j50
dB
+j25
+j100
+j10
2.0
1.5
1.0
0.5
0.0
2.4GHz
1.8GHz
F
3GHz
0.9GHz
0
10
25
50
100
0.45GHz
4GHz
5GHz
-j10
IC = 20 mA
IC = 5 mA
6GHz
-j100
-j25
-j50
GHz
0.0
1.0
2.0
3.0
4.0
6.0
f
Semiconductor Group
Semiconductor Group
8
Jul-14-1998
1998-11-01
8
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