Q62703-N50-X1 [ETC]
OPTOKOPPLER ; OPTOKOPPLER
| 型号： | Q62703-N50-X1 |
| 厂家： | 
ETC |
| 描述： | OPTOKOPPLER
|
| 文件： | 总4页 (文件大小：216K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CNY17F SERIES
PHOTOTRANSISTOR
NO BASE CONNECTION
OPTOCOUPLER
FEATURES
• High Current Transfer Ratio
CNY17F-1, 40-80%
Dimensions in inches (mm)
Pin One ID
CNY17F-2, 63-125%
2
1
3
Anode
Cathode
NC
1
2
3
6
5
4
Base
CNY17F-3, 100-200%
CNY17F-4, 160-320%
• Breakdown Voltage, 5300 VAC
.248 (6.30)
.256 (6.50)
Collector
Emitter
RMS
• High Collector-Emitter Voltage
• V =70 V
4
5
6
CEO
.335 (8.50)
.343 (8.70)
• No Base Terminal Connection for Improved
Common Mode Interface Immunity
.300 (7.62)
typ.
.039
(1.00)
Min.
•
Field-Effect Stable by TRIOS*
• Long Term Stability
• Industry Standard Dual-in-Line Package
.130 (3.30)
.150 (3.81)
• Underwriters Lab File #E52744
4°
18° typ.
.110 (2.79)
.150 (3.81)
typ.
VE
•
VDE #0884, Available with Option 1
D
.020 (.051) min.
.010 (.25)
.014 (.35)
.031 (0.80)
.035 (0.90)
.018 (0.45)
.022 (0.55)
Maximum Ratings (T =25°C)
A
.300 (7.62)
.347 (8.82)
.100 (2.54) typ.
Emitter
Reverse Voltage ................................................ 6 V
DC Forward Current .................................... 60 mA
Surge Forward Current (t ≤10 µs) ...................2.5 A
Total Power Dissipation ............................ 100 mW
DESCRIPTION
The CNY17F is an optocoupler consisting of a Gallium Arsenide infrared
emitting diode optically coupled to a silicon planar phototransistor
detector in a plastic plug-in DIP-6 package.
Detector
Collector-Emitter Breakdown Voltage ............. 70 V
Collector Current ..........................................50 mA
Collector Current (t≤1 ms)......................... 100 mA
Total Power Dissipation ............................ 150 mW
The coupling device is suitable for signal transmission between two
electrically separated circuits. The potential difference between the cir-
cuits to be coupled is not allowed to exceed the maximum permissible
reference voltages.
In contrast to the CNY17 Series, the base terminal of the F type is not
connected, resulting in a substantially improved common-mode interfer-
ence immunity.
Package
Isolation Test Voltage (between emitter and detector
referred to standard climate 23/50
DIN 50014) .................................... 5300 VAC
RMS
Creepage .................................................... >7 mm
Clearance ................................................... >7 mm
Isolation Thickness between Emitter
Characteristics (T =25°C)
A
Symbol
Unit
Condition
Emitter
and Detector......................................... ≥0.4 mm
Comparative Tracking Index per
Forward Voltage
Breakdown Voltage
Reverse Current
Capacitance
V
1.25 (≤1.65)
≥≥≥6
V
I =60mA
F
F
DIN IEC 112/VDE 0303, part 1 ...................... 175
11
V
V
I =10µA
BR
R
Isolation Resistance (V =500 V).................≥10
Ω
10
Storage Temperature Range ............–55 to +150°C
Ambient Temperature Range ...........–55 to +100°C
Junction Temperature ................................... 100°C
Soldering Temperature
I
0.01 (≤10)
25
µA
pF
K/W
V =6 V
R
R
C
R
V =0 V, f=1 MHz
R
O
Thermal Resistance
Detector
750
thJA
(max. 10 s, dip soldering:
distance to seating plane ≥1.5 mm) .......... 260°C
Capacitance
C
R
5.2
pF
V
MHz
=5 V, f=1
CE
CE
*TRIOS—TRansparent IOn Shield
Thermal Resistance
500
K/W
thJA
Package
Saturation Voltage,
Collector-Emitter
V
0.25 (≤0.4)
V
I =10 mA
F
I =2.5 mA
C
CEsat
Coupling
Capacitance
C
0.6
pF
C
5–1
Figure 3. Current transfer ratio versus diode
Current Transfer Ratio (I /I at V =5 V, 25°C)
C
F
CE
current (T =–25°C, V =5 V) I /I =f (I )
and Collector-Emitter Leakage Current by dash number
A
CE
C
F
F
-1
-2
-3
-4
Unit
%
I /I at V =5 V
C
F
F
CE
(I =10 mA)
40–80
63-125
100–200
160–320
90 (>56)
I /I at V =5 V
C
F
F
CE
(I =1 mA)
30 (>13) 45 (>22) 70 (>34)
%
Collector-Emitter
Leakage Current
(V =10 V) (I
2 (≤ 50)
2 (≤ 50)
5 (≤ 100) 5 (≤ 100) nA
)
CEO
CE
Figure 1. Linear operation (without saturation)
IF
RL=75 Ω
VCC=5 V
IC
47 Ω
Figure 4. Current transfer ratio versus diode
current (T =0°C, V =5 V) I /I =f (I )
I =10 mA, V =5 V, T =25°C
F
CC
A
A
CE
C
F
F
Load Resistance
Turn-On Time
Rise Time
R
75
Ω
L
ON
R
t
t
t
t
3.0
2.0
2.3
2.0
250
µs
µs
µs
µs
kHz
Turn-Off Time
Fall Time
OFF
f
Cut-Off Frequency
f
CO
Figure 2. Switching operation (with saturation)
IF
1 KΩ
VCC=5 V
47 Ω
Figure 5. Current transfer ratio versus diode
current (T =25°C, V =5 V) I /I =f (I )
A
CE
C
F
F
-1
-2 and -3
-4
(I =20 mA)
(I =10 mA)
(I =5 mA)
F
F
F
Turn-On Time
Rise Time
t
t
t
t
3.0
2.0
18
4.2
3.0
23
6.0
4.6
25
µs
µs
µs
µs
ON
R
Turn-Off Time
Fall Time
OFF
F
11
14
15
CNY17F
5–2
Figure 6. Current transfer ratio versus
Figure 9. Output characteristics
Figure 12. Saturation voltage current
and modulation CNY17F-1
diode current (T =50°C) V =5 V
CNY17F-2, -3 (T =25°C) IC=f(V
)
A
CE
A
CE
V
=f (I ) (T =25°C)
CEsat
C A
Figure 13. Saturation voltage versus
collector current and modulation depth
Figure 7. Current transfer ratio versus
diode current (T =75°C) V =5 V
Figure 10. Forward voltage V =f(I )
F
F
A
CE
CNY17F-2 V
=f (I ) (T =25°C)
CEsat
C A
Figure 14. Saturation voltage versus
collector current and modulation depth
Figure 11. Collector emitter off-state
current I =f(V,T) (T =75°C, I =0)
Figure 8. Current transfer ratio versus
temperature (I =10 mA, V =5 V)
CEO
A
F
F
CE
CNY17F-3 V
=f (I ) (T =25°C)
I /I =f (T)
CEsat
C A
C
F
CNY17F
5–3
Figure 17. Permissible power dissipa-
Figure 15. Saturation voltage versus
collector current and modulation depth
Figure 19. Transistor capacitance
tion transistor and diode P =f(T )
C=f(V )(T =25°C, f=1 MHz)
tot
A
O
A
CNY17F-4 V
=f (I ) (T =25°C)
CEsat
C A
Figure 16. Permissible pulse load
D=parameter, T =25°C, I =f(t )
Figure 18. Permissible forward current
diode I =f(T )
A
F
p
F
A
CNY17F
5–4
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