RFM12B-433S1 [ETC]
UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE;型号: | RFM12B-433S1 |
厂家: | ETC |
描述: | UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE ISM频段 |
文件: | 总11页 (文件大小:418K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RFM12B
Datasheet REV2.0
UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE
RFM12B
(the purpose of this spec covers mainly for the
RFM12B
physical characteristic of the module, for register
configure and its related command info please refer
to RF12B data sheets)
General Introduction
RFM12B is a low costing ISM band transceiver
module implemented with unique PLL. It works
signal ranges from 433/868/915MHZ bands, comply
with FCC, ETSI regulation. The SPI interface is
used to communicate with microcontroller for
parameter setting.
Features:
• Low costing, high performance and price ratio
• Tuning free during production
• PLL and zero IF technology
• Fast PLL lock time
• High resolution PLL with 2.5 KHz step
• High data rate (up to 115.2 kbps with internal demodulator,with external RC filter highest data rate is
256 kbps)
• Differential antenna input/output
• Automatic antenna tuning
• Programmable TX frequency deviation (from 15 to 240 KHz)
• Programmable receiver bandwidth (from 67 to 400 kHz)
• Analog and digital signal strength indicator (ARSSI/DRSSI)
• Automatic frequency control (AFC)
• Data quality detection (DQD)
• Internal data filtering and clock recovery
• RX synchron pattern recognition
• SPI compatible serial control interface
• Clock and reset signal output for external MCU use
• 16 bit RX Data FIFO
• Two 8 bit TX data registers
• Standard 10 MHz crystal reference
• Wakeup timer
• 2.2V – 3.8V power supply
• Low power consumption
• Standby current less than 0.3uA
• Supports very short packets (down to 3 bytes)
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RFM12B
Datasheet REV2.0
Typical Application:
• Remote control
• Remote sensor
• Wireless data collection
• Home security system
• Toys
• Tire pressure monitoring system
Pin Definition:
SMD
DIP
definition
nINT/VDI
VDD
Type
DI/ DO
S
Function
Interrupt input (active low)/Valid data indicator
Positive power supply
SDI
DI
SPI data input
SCK
DI
SPI clock input
nSEL
SDO
DI
Chip select (active low)
DO
DO
Serial data output with bus hold
Interrupts request output(active low)
nIRQ
FSK/DATA/nFFS DI/DO/DI
Transmit FSK data input/ Received data output (FIFO not used)/ FIFO
select
DCLK/CFIL/FFIT DO/AIO/DO Clock output (no FIFO )/ external filter capacitor(analog mode)/ FIFO
interrupts(active high)when FIFO level set to 1, FIFO empty
interruption can be achieved
CLK
DO
DIO
S
Clock output for external microcontroller
Reset output(active low)
Power ground
nRES
GND
Electrical Parameter:
Maximum(not at working mode)
symbol
parameter
minimum
-0.5
maximum
6.0
Unit
V
Vdd
Positive power supply
All pin input level
Vin
-0.5
Vdd+0.5
V
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RFM12B
Datasheet REV2.0
25 mA
Iin
Input current except power
Human body model
-25
-55
ESD
Tst
1000
125
V
Storage temperature
℃
℃
Tld
Soldering temperature(10s)
260
Recommended working range
symbol
parameter
minimum
2.2
maximum
Unit
V
Vdd
Positive power supply
Working temperature
3.8
85
Top
-40
℃
DC characteristic
symbol
parameter
Remark
minimum typical maximum Unit
Idd_TX_0
Supply current
315,433MHz band
15
16
17
22
23
24
11
17
18
19
24
25
26
13
14
15
1.2
mA
mA
mA
(TX mode, Pout = 0dBm) 868MHz band
915MHz band
Idd_TX_PMAX Supply current
(TX mode, Pout = Pmax
315,433MHz band
868MHz band
)
915MHz band
Idd_RX
Supply current
315,433MHz band
868MHz band
(RX mode)
12
13
0.62
0.3
0.5
915MHz band
Ix
Idle current
Crystal oscillator on
All blocks off
mA
uA
uA
V
Ipd
Ilb
Sleep mode current
Low battery detection
Low battery detect
threshold
Vlb
0.1V per step
2.2
0
3.7
Vlba
Low battery detection
accuracy
5
%
Vil
Vih
Iil
Low level input
High level input
Leakage current
Leakage current
Low level output
High level output
0.3*Vdd
V
0.7*Vdd
V
Vil=0V
-1
-1
1
uA
uA
V
Iih
Vih=Vdd, Vdd=5.4V
Iol=2mA
1
Vol
Voh
0.4
Ioh=-2mA
Vdd-0.4
V
AC characteristic
symbol parameter
remark
min
typical
max
Unit
fref
PLL frequency
frequency
9
10
11
MHz
433 MHz band,2.5KHz step
868 MHz band,5KHz step
915 MHz band,7.5KHz step
430.24
860.48
900.72
439.7
5
fLO
(10MHz crystal
used)
MHz
879.5
1
929.2
7
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RFM12B
Datasheet REV2.0
frequency
(9MHZ crystal
used)
433 MHz band,2.5KHz step
868 MHz band,5KHz step
915 MHz band,7.5KHz step
387.22
774.43
810.65
395.7
6
fLO
MHz
791.5
6
836.3
4
frequency
(11MHZ crystal
used)
433 MHz band,2.5KHz step
868 MHz band,5KHz step
915 MHz band,7.5KHz step
473.26
946.53
990.79
483.7
3
fLO
MHz
967.4
6
1022.
2
BW
Receiver
mode 0
60
67
75
bandwidth
mode 1
120
180
240
300
360
134
200
270
350
400
30
150
225
300
375
450
mode 2
KHz
mode 3
mode 4
mode 5
tlock
PLL lock time
After 10MHz step hopping, frequency
error <10 kHz
us
us
With a running crystal
oscillator
PLL startup time
200
300
tst, P
BR
Data rate
Data rate
With internal digital demodulator
With external RC filter
BER 10-3, BW=134KHz,BR=1.2kbps, 433MHz band
0.6
115.2
256
kbps
kbps
BRA
-109
-100
BER 10-3, BW=134KHz,BR=1.2kbps, 868MHz band
BER 10-3, BW=134KHz,BR=1.2kbps, 915MHz band
Pmin
sensitivity
dBm
-105
-105
0.8*
dfFSK
±5
-100
-100
AFCrange AFC working
range
dfFSK : FSK deviation in the received
signal
RSA
RSSI accuracy
RSSI range
ARSSI filter
RSSI
dB
dB
nF
dB
RSR
46
CARSSI
RSSTEP
1
6
programmable
step
RSRESP
DRSSI response
time
RSSI output high after valid ,
CARRSI=5nF
500
us
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RFM12B
Datasheet REV2.0
AC characteristic(Transmitter)
symbol parameter
remark
min
typical max Unit
5
433MHz band
868MHz band
915MHz band
Selectable in 3 dB
steps
3
Pmax
Pout
Co
Max. available output power
Typical output power
dBm
2
4
4
2
Pmax-21
Pmax dbm
Output capacitance
(set by the automatic antenna
tuning circuit)
In low bands
In high bands
2
2.6
2.7
3.2
3.3
pf
2.1
Qo
Quality factor of the output
capacitance
In low bands
13
8
15
10
17
In high bands
12
Lout
Output phase noise
100 kHz from carrier
1 MHz from carrier
Via internal TX data
register
-80
-103
172
dbc/HZ
kbps
BRTX
BRATX
dffsk
FSK bit rate
TX data connected to the
FSK input
FSK bit rate
256
240
kbps
FSK frequency deviation
Programmable in 15
kHz steps
15
kHZ
AC characteristic(Turn-on/Turnaround timings)
symbol
parameter
Crystal oscillator
startup time
Transmitter
time
remark
min typical max Unit
Tst
Crystal ESR < 100
1
5
ms
turn-on
Synthesizer
oscillator on with 10 MHz step
Synthesizer off, crystal
oscillator on with 10 MHz step
Synthesizer and crystal
off,
crystal
250
250
us
us
Ttx_XTAL_ON
Receiver turn-on time
Trx_XTAL_ON
Transmitter
–
Receiver turnover time
oscillator on during TX/RX
change with 10 MHz step
150
150
us
Ttx_rx_SYNT_ON
Receiver
–
Synthesizer
and
crystal
Transmitter turnover
time
oscillator on during RX/TX
change with 10 MHz step
Programmable in 0.5 pF steps, 8.5
tolerance+/- 10%
us
pf
Trx_tx_SYNT_ON
Cxl
Crystal load
16
capacitance
tPOR
Internal POR timeout
After Vdd has reached 90% of
final value
100
ms
tPBt
Wake-up timer clock
period
Calibrated every 30 seconds
0.96
1.05 ms
Cin, D
tr, f
Digital input apacitance
Digital output rise/fall time
2
pf
15pF pure capacitive load
10
ns
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RFM12B
Datasheet REV2.0
Field testing range
Band
Test condition
Distance
433MHz band
Receiver bandwidth =67KHz, data rate=1.2kbps, transmitter frequency
>200M
>200M
>200M
deviation =45KHZ(matches with RFM12)In free open area
Receiver bandwidth=67KHz,data rate =1.2kbps,Transmitter frequency
deviation =45KHZ(matches with RFM12)in free open area
Receiver bandwidth=67KHz,data rate =1.2kbps,Transmitter frequency
deviation =45KHZ(matches with RFM12)in free open area
868MHz band
915MHz band
SGS Reports
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RFM12B
Datasheet REV2.0
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RFM12B
Datasheet REV2.0
Mechanical Dimension
(units in mm)
SMD PACKAGE(S1)
SMD PACKAGE(S2)
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RFM12B
Datasheet REV2.0
DIP PACKAGE(D)
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RFM12B
Datasheet REV2.0
Module Model Definition
model=module type+operation band+module package type+ core chip package type
RFM12B – 433 D P
module type operation band module package type core chip package type
example:
1,RFM12B-433D : RFM12B module at 433MHz band, DIP module, die chip.
2,RFM12B-433DP : RFM12B module at 433MHz band, DIP module, package chip.
3,RFM12B-868S1 : RFM12B module at 868MHZ band, SMD module, thickness at 4.2mm,die chip.
4,RFM12B-868S1P: RFM12B module at 868MHZ band, SMD module, thickness at 4.2mm, package chip.
5,RFM12B-915S2 : RFM12B module at 915MHZ band, SMD module, thickness at 2.2mm,die chip.
6,RFM12B-915S2P: RFM12B module at 868MHZ band, SMD module, thickness at 4.2mm, package chip.
Module model
operation band
433MHz
433MHz
433MHz
433MHz
433MHz
433MHz
868MHz
868MHz
868MHz
868MHz
868MHz
868MHz
915MHz
915MHz
915MHz
915MHz
915MHz
915MHz
module package type
DIP
core chip package type
Die
RFM12B-433D
RFM12B-433DP
RFM12B-433S1
RFM12B-433S1P
RFM12B-433S2
RFM12B-433S2P
RFM12B-868D
RFM12B-868DP
RFM12B-868S1
RFM12B-868S1P
RFM12B-868S1
RFM12B-868S1P
RFM12B-915D
RFM12B-915DP
RFM12B-915S1
RFM12B-915S1P
RFM12B-915S2
RFM12B-915S2P
DIP
16pin TSSOP
Die
SMD, thickness at 4.2mm
SMD, thickness at 4.2mm
SMD, thickness at 2.2mm
SMD, thickness at 2.2mm
DIP
16pin TSSOP
Die
16pin TSSOP
Die
DIP
16pin TSSOP
Die
SMD, thickness at 4.2mm
SMD, thickness at 4.2mm
SMD, thickness at 2.2mm
SMD, thickness at 2.2mm
DIP
16pin TSSOP
Die
16pin TSSOP
Die
DIP
16pin TSSOP
Die
SMD, thickness at 4.2mm
SMD, thickness at 4.2mm
SMD, thickness at 2.2mm
SMD, thickness at 2.2mm
16pin TSSOP
Die
16pin TSSOP
All RFM12B module model and description
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RFM12B
Datasheet REV2.0
This document may contain preliminary information and is subject to
change by Hope Microelectronics without notice. Hope
Microelectronics assumes no responsibility or liability for any use of
the information contained herein. Nothing in this document shall
operate as an express or implied license or indemnity under the
HOPE MICROELECTRONICS CO.,LTD
Add:4/F, Block B3, East Industrial Area, intellectual property rights of Hope Microelectronics or third parties.
Huaqiaocheng, Shenzhen, Guangdong, The products described in this document are not intended for use in
China
implantation or other direct life support applications where malfunction
may result in the direct physical harm or injury to persons. NO
WARRANTIES OF ANY KIND, INCLUDING, BUT NOT LIMITED TO,
THE IMPLIED WARRANTIES OF MECHANTABILITY OR FITNESS
FOR A ARTICULAR PURPOSE, ARE OFFERED IN THIS
DOCUMENT.
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