SBR40U60PT [ETC]

Super barrier rectifier; 超级无障碍整流器
SBR40U60PT
型号: SBR40U60PT
厂家: ETC    ETC
描述:

Super barrier rectifier
超级无障碍整流器

二极管 功效 局域网
文件: 总2页 (文件大小:90K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SBR40U60PT  
Using state-of-the-art SBR IC process technology,  
the following features are made possible in a single device:  
Major ratings and characteristics  
Device optimized for low forward voltage drop to  
maximize efficiency in Power Supply applications  
Characteristics  
F(AV) Rectangular Waveform  
Values  
Units  
A
I
40  
VRRM  
60  
V
VF@20A, Tj=125OC  
0.48  
V, typ  
OC  
MECHANICAL:  
* Molded Plastic TO-3P package  
Tj (operating/storage)  
-65 to 150  
ELECTRICAL:  
* Low Forward Voltage Drop  
* Reliable High Temperature Operation  
* Super Barrier Design  
2
* Softest, fast switching capability  
Common  
1
* 150OC Operating Junction Temperature  
3
Cathode  
Anode  
Anode  
Maximum Ratings and Electrical Characteristics  
(at 25OC unless otherwise specified)  
SYMBOL  
UNITS  
VRM  
VRWM  
VRRM  
DC Blocking Voltage  
Working Peak Reverse Voltage  
Peak Repetitive Reverse Voltage  
60  
40  
Volts  
Average Rectified Forward Current  
(Rated VR-20Khz Square Wave) - 50% duty  
cycle  
IO  
Amps  
Peak Forward Surge Current - 1/2 60hz  
IFSM  
IRRM  
300  
3
Amps  
Amps  
Peak Repetitive Reverse Surge Current  
(2uS-1Khz)  
Instantaneous Forward Voltage (per leg)  
IF = 20A; TJ = 25OC  
IF = 20A; TJ= 125OC  
Typ  
---  
---  
Max  
0.69  
0.60  
*
VF  
Volts  
Maximum Instantaneous Reverse Current at  
Typ  
---  
---  
Max  
0.5  
100  
Rated VRM  
TJ = 25OC  
TJ = 125OC  
IR  
mA  
mA  
Maximum Rate of Voltage Change  
(at Rated VR)  
10,000  
dv/dt  
V/uS  
OC/W  
OC  
Maximum Thermal Resistance JC (per leg)  
Operating and Storage Junction Temperature  
* Pulse width < 300 uS, Duty cycle < 2%  
2
RθJC  
TJ  
-65 to +150  
________________________________________________________________________________________________  
www.apdsemi.com Version 1.0 - August 2006  
1
SBR40U60PT  
100  
10  
1
100  
10  
1
Tj=125C  
Tj=100C  
Tj=75C  
Tj=125C  
Tj=100C  
Tj=75C  
Tj=25C  
Tj=25C  
0.1  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0
10  
20  
30  
40  
50  
60  
Vf, Instantaneous Forward Voltage (Volts)  
Vr, Reverse Voltage (Volts)  
Figure 1: Typical Reverse Current (per leg)  
Figure 2: Typical Forward Voltage (per leg)  
20  
10  
0
0
25  
50  
75  
100  
125  
150  
Tc, Case Temp (C)  
Figure 3: Current Derating, Case (per leg)  
APD SEMICONDUCTOR reserves the right to make changes without further notice to any products herein. APD SEMICONDUCTOR makes no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose, nor does APD SEMICONDUCTOR assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without  
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APD SEMICONDUCTOR data sheets and/or specifications can and do vary in different applications and actual  
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APD SEMICONDUCTOR does not convey any license  
under its patent rights nor the rights of others. APD SEMICONDUCTOR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other  
applications intended to support or sustain life, or for any other application in which the failure of the APD SEMICONDUCTOR product could create a situation where personal injury or death may occur. Should Buyer  
purchase or use APD SEMICONDUCTOR products for any such unintended or unauthorized application, Buyer shall indemnify and hold APD SEMICONDUCTOR and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or  
unauthorized use, even if such claim alleges that APD SEMICONDUCTOR was negligent regarding the design or manufacture of the part..  
1 Lagoon Drive, Suite 410, Redwood City, CA 94065, USA  
Ph: 650 508 8896 FAX: 650 508 8865  
Homepage: www.apdsemi.com  
email: info@apdsemi.com  
________________________________________________________________________________________________  
www.apdsemi.com Version 1.0 - August 2006  
2

相关型号:

SBR4172

10 MHz - 250 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER, H2, TO-8B
APITECH

SBR4F

FAST RECOVERY 1-PHASE SILICON BRIDGE RECTIFIERS
SEMTECH

SBR4FF

Bridge Rectifier Diode, 1 Phase, 1A, Silicon, G32, 4 PIN
SEMTECH

SBR4FFX

暂无描述
SEMTECH

SBR4U130LP-7

SUPER BARRIER RECTIFER
DIODES

SBR50-00G

Glass Passivated 3 Phase Bridge Rectifiers
HY

SBR50-01G

Glass Passivated 3 Phase Bridge Rectifiers
HY

SBR50-02G

Glass Passivated 3 Phase Bridge Rectifiers
HY

SBR50-04G

Glass Passivated 3 Phase Bridge Rectifiers
HY

SBR50-06G

Glass Passivated 3 Phase Bridge Rectifiers
HY

SBR50-08G

Glass Passivated 3 Phase Bridge Rectifiers
HY

SBR50-08W

Silicon Passivated 3 Phase Bridge Rectifiers
HY