SD18-820 [ETC]

High Power Density, Low Profile, Shielded Inductors; 高功率密度,低剖面,屏蔽式电感
SD18-820
型号: SD18-820
厂家: ETC    ETC
描述:

High Power Density, Low Profile, Shielded Inductors
高功率密度,低剖面,屏蔽式电感

电感器
文件: 总8页 (文件大小:391K)
下载:  下载PDF数据表文档文件

SD18-820-R

General Purpose Inductor, 82uH, 20%, 1 Element, Ferrite-Core, SMD, ROHS COMPLIANT

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0 COOPER

SD18-821

High Power Density, Low Profile, Shielded Inductors

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23 ETC

SD18-821

High Power Density, Low Profile, Shielded Inductors

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8 ETC

SD18-821

General Purpose Inductor, 820uH, 20%, 1 Element, Ferrite-Core, SMD, 2020, CHIP

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0 COOPER

SD18-821-R

General Purpose Inductor, 820uH, 20%, 1 Element, Ferrite-Core, SMD, ROHS COMPLIANT

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0 COOPER

SD18-821-R

General Purpose Inductor, 820uH, 20%, 1 Element, Ferrite-Core, SMD, ROHS COMPLIANT

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0 COOPER

SD1886E3

RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN,

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0 MICROSEMI

SD1886E3

RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN,

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0 MICROSEMI

SD1887

RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN,

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0 MICROSEMI

SD1887E3

RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN,

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0 MICROSEMI

SD1887E3

RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN,

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0 MICROSEMI

SD1888

RF Power Bipolar Transistor, L Band, Silicon, NPN,

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0 MICROSEMI

SD1888

RF Power Bipolar Transistor, L Band, Silicon, NPN,

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0 MICROSEMI

SD1888-03

RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS

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24 STMICROELECTR

SD1888E3

RF Power Bipolar Transistor, L Band, Silicon, NPN,

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0 MICROSEMI