SDB156A [ETC]
Glass Passivated Single Phase Bridge Rectifiers;
| 型号： | SDB156A |
| 厂家： | 
ETC |
| 描述： | Glass Passivated Single Phase Bridge Rectifiers |
| 文件： | 总3页 (文件大小：172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDB153A thru SDB157A（Thin Body）
Glass Passivated Single
Phase Bridge Rectifiers
Reverse Voltage 200 to 1000V
Forward Current 1.5 Amp
Features
y
y
y
Glass passivated die constrution
Ideal for automatic insrti
Plastic material used ca
flammability recognition 4
High surge curent caablity
Circuit
+
~
-
y
Mechanical Data
Case: Molded pastic cas
Termials: Plated leads solderable per
MIL-STD-750Method 2026
Polarity: Marked on Body
Mounting Position: Any
~
Module Type
VRRM
200V
400V
600V
800V
000V
VRSM
300V
500V
700V
900V
1100V
TYPE
SDB153A
SDB154A
SDB155A
SDB156A
SDB157A
Maximum Ratings and Thermal Chaacteristis (TA = 25℃unless otherwise noted)
Symbol
IF(AV)
Conditons
Maximum averagforward output rectied current Tc =40℃
Values
1.5
Units
A
Peak rward surge urrent single half se-wave superimposed
on rated load (JEDEC ethod
60
A
IFSM
i2t
Visol
A2s
V
10
Ratg for fusing (t<8.3ms)
a.c.50Z;r.m.s.;1min
2500
RθJA
RC
40
15
Maximum thermal resistance per leg
℃/W
-55 to +150
0.3
℃
Tj, TST
Weight
Operating Junctin and storage temperature range
pproximate Weig
g
ElectricaCharcteristics (TA = 25℃unless otherwise noted)
Symbol
VF
Conditions
Maximum nstantaneous Forward Voltage per leg
Values
1.1
Units
V
IFM =1.5A
Maximum DC reverse current at rated
DC blocking voltage per leg
TA = 25℃
TA = 125℃
5.0
500
IR
µA
PF
CJ
Typical Junction Capacitance per leg
VR=4.0V 1.0MHZ
25
Notes: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with
0.47x0.47” (12 x12mm) copper pads.
Document Number: SDB153A thru SDB157A（Thin Body）
Dec.02,2014
www.smsemi.com
1
SDB153A thru SDB157A（Thin Body）
Performance Curves
100
2.5
2.0
1.5
1.0
10
1.0
0.5
Tj=25º
Pulse Width=30μs
60Hz Resistive or
Inductive load
2% duty cyce
0
0.1
0
50
100
150
.4
0.6
0.
1.
1.2
1.4
TA, AMBIENT TEMPERATURE (ºC)
Fig.1 Output Current Derating Curve
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig.2 Typ Forward Characteriscs (per element)
100
60
50
40
30
10
20
Tj=25ºC
f =1MHZ
Vsig=50mV p-p
10
0
Single Half Sine-Wae
(JEDEC Method)
1
1
10
100
1
10
100
VR, REVERSE VOLTAGE (V)
Fig.4 Typ Junction Capacitance (per element)
UMBER OF CYCLES AT 6
Fig.3 Max N-Repetitive Peak Forward Surge Current
100
Tj=125ºC
10
1.0
Tj=25ºC
0.1
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig.5 Typical Reverse Characteristics per element
Document Number: SDB153A thru SDB157A（Thin Body）
Dec.02,2014
www.smsemi.com
2
SDB153A thru SDB157A（Thin Body）
Package Outline Information
CASE: SDB-2
Dimensions in inches (mm)
Document Number: SDB153A thru SDB157A（Thin Body）
www.smsemi.com
Dec.02,2014
3
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