SDU06464B5B61MT-75[EIW]R [ETC]

512MB DDR – SDRAM DIMM;
SDU06464B5B61MT-75[EIW]R
型号: SDU06464B5B61MT-75[EIW]R
厂家: ETC    ETC
描述:

512MB DDR – SDRAM DIMM

动态存储器 双倍数据速率
文件: 总12页 (文件大小:206K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Data Sheet  
Rev.1.0  
09.04.2008  
512MB DDR – SDRAM DIMM  
184PIN DIMM  
Features:  
184-pin 64-bit Dual-In-Line module.  
SDU06464B5B61MT-50R  
512MB PC-3200 in TSOP Technique  
RoHS compliant  
Double Date Rate synchronous DRAM  
Module for industrial applications  
DDR-SDRAM component base: MICRON  
MT46V64M8P-5B-F  
Options:  
VDD 2.5V ±0.2V, VDDQ 2.5V ±0.2V  
Programmable CAS Latency, Burst Length  
and Wrap Sequence  
Frequency / Latency  
DDR 400 MHz CL3  
DDR 333 MHz CL2.5  
DDR 266 MHz CL2.5  
Marking  
-50  
-60  
-75  
Auto Refresh (CBR) and Self Refresh  
8k Refresh every 64ms  
2.5V I/O ( SSTL_2 compatible)  
Serial Presence Detect with EEPROM  
Gold-contact pad  
Module densities  
512MB with 8 dies and 1 rank  
Standard Grade (TA)  
0°C to 70°C  
0°C to 85°C  
-25°C to 85°C  
-40°C to 85°C  
This module family is fully pin and functional  
compatible to the JEDEC PC3200 spec.  
and JEDEC- Standard MO 224.  
(see www.jedec.org)  
Grade E  
Grade I  
(TA)  
(TA)  
(TA)  
Grade W  
The pcb and all components are  
manufactured according to the RoHS  
compliance specification  
Environmental Requirements:  
[EU Directive 2002/95/EC Restriction of  
Hazardous Substances (RoHS)]  
Operating temperature (TA)  
Standard Grade  
Grade E  
0°C to 70°C  
0°C to 85°C  
Grade I  
Grade W  
-25°C to 85°C  
-40°C to 85°C  
Operating Humidity  
10% to 90% relative humidity, noncondensing  
Operating Pressure  
105 to 69 kPa (up to 10000 ft.)  
Storage Temperature  
-55°C to 100°C  
Storage Humidity  
5% to 95% relative humidity, noncondensing  
Storage Pressure  
1682 PSI (up to 5000 ft.) at 50°C  
Figure1: mechanical dimensions  
Swissbit Germany AG  
Wolfener Straße 36  
D-12681 Berlin  
Fon: +49 (0) 30 93 69 54 - 0  
Fax: +49 (0) 30 93 69 54 - 55  
www.swissbit-germany.com  
eMail: firma@swissbit-germany.com  
Page 1  
of 12  
Data Sheet  
Rev.1.0  
09.04.2008  
This Swissbit module family is industry standard 184-pin 8-byte Double Date rate synchronous SDRAM Dual-In-line  
Memory Modules (DIMMs), which are organized as x64 high speed memory arrays designed for use in non-parity  
applications. DIMMs are assembled in TSOP Technology. The passive devices and the EEPROM are SMD  
components.  
The DIMM use serial presence detects (SPD) implemented via serial EEPROM using the two-pin-I2C protocol. The  
first 128 bytes are utilized by the DIMM manufacturer and the second 128 bytes are available to the end user.  
All Swissbit DIMMs provide a high performance, flexible 8-byte interface in a 133.35mm long footprint.  
All modules of the extended temperature grade have seen special tests during the manufacturing process to  
ensure proper operation according to the field of operation as stated in the environmental conditions.  
Module Configuration  
Module Dimensions  
in mm  
DDR SDRAMs  
used  
Row  
Addr.  
Bank  
Select  
Col.  
Addr.  
Organization  
Refresh  
64M x 64  
8 x 64M x 8  
13  
BA0, BA1  
11  
8k  
133,35 max  
Product Spectrum  
Memory clock/Data  
bit rate  
Part Number  
Module Density  
Transfer Rate  
Latency  
SDU06464B5B61MT-50[E/I/W]R  
SDU06464B5B61MT-60[E/I/W]R  
SDU06464B5B61MT-75[E/I/W]R  
512MB  
512MB  
512MB  
3.2 GB/s  
2.7 GB/s  
2.1 GB/s  
5.0ns/400MT/s  
6.0ns/333MT/s  
7.5ns/266MT/s  
3200-3033  
2700-2533  
2100-2533  
Pin Name  
A0-A12  
Address Inputs  
BA0, BA1  
DQ0 – DQ63  
DM0-DM7  
/RAS  
Bank Selects  
Data Input/Output  
Data Masks  
Row Address Strobe  
Column Address Strobe  
Read / Write Enable  
Clock Enable  
/CAS  
/WE  
CKE0  
CK0 – CK2  
/CK0 – /CK2  
DQS0- DQS7  
Clock Inputs, positive line  
Clock Inputs, negative line  
Data strobes  
Swissbit Germany AG  
Wolfener Straße 36  
D-12681 Berlin  
Fon: +49 (0) 30 93 69 54 - 0  
Fax: +49 (0) 30 93 69 54 - 55  
www.swissbit-germany.com  
eMail: firma@swissbit-germany.com  
Page 2  
of 12  
Data Sheet  
Rev.1.0  
09.04.2008  
/S0  
Chip Select  
VDD  
Power (2.5V± 0.2V)  
VDDQ  
VDDSPD  
VREF  
DQ Power (2.5V±0.2V)  
SPD Power  
Input/Output Reference  
Ground  
Vss  
SCL  
Clock for Presence Detect  
Serial Data Out for Presence Detect  
Slave Address Select Bus for Presence Detect  
No Connection  
SDA  
SA0 – SA2  
NC  
Pin Configuration  
Front Side  
PIN Name PIN #  
Back Side  
PIN Name PIN #  
PIN #  
1
PIN Name  
DQS8  
A0  
PIN #  
93  
PIN Name  
VREF  
DQ0  
VSS  
47  
48  
49  
50  
51  
52  
53  
54  
55  
56  
57  
58  
59  
60  
61  
62  
63  
64  
65  
66  
67  
68  
69  
70  
71  
VSS  
139  
140  
141  
142  
143  
144  
145  
146  
147  
148  
149  
150  
151  
152  
153  
154  
155  
156  
157  
158  
159  
160  
161  
162  
163  
VSS  
2
94  
DQ4  
DQ5  
VDDQ  
DM0  
DQ6  
DQ7  
VSS  
DM8  
A10  
3
NC  
95  
4
DQ1  
DQS0  
DQ2  
VDD  
VSS  
96  
NC  
5
NC  
97  
VDDQ  
NC  
6
BA1  
98  
7
DQ32  
VDDQ  
DQ33  
DQS4  
DQ34  
VSS  
99  
VSS  
8
DQ3  
NC  
100  
101  
102  
103  
104  
105  
106  
107  
108  
109  
110  
111  
112  
113  
114  
115  
116  
117  
DQ36  
DQ37  
VDD  
9
NC  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
NC  
NC  
VSS  
NC  
DM4  
DQ38  
DQ39  
VSS  
DQ8  
DQ9  
DQS1  
VDDQ  
NC  
VDDQ  
DQ12  
DQ13  
DM1  
VDD  
BA0  
DQ35  
DQ40  
VDDQ  
/WE  
DQ44  
/RAS  
DQ45  
VDDQ  
/S0  
NC  
DQ14  
DQ15  
NC  
VSS  
DQ41  
/CAS  
VSS  
DQ10  
DQ11  
CKE0  
VDDQ  
DQ16  
DQ17  
DQS2  
VDDQ  
NC  
NC  
DQS5  
DQ42  
DQ43  
VDD  
DM5  
VSS  
DQ20  
A12  
DQ46  
DQ47  
NC  
VSS  
NC  
DQ21  
Swissbit Germany AG  
Wolfener Straße 36  
D-12681 Berlin  
Fon: +49 (0) 30 93 69 54 - 0  
Fax: +49 (0) 30 93 69 54 - 55  
www.swissbit-germany.com  
eMail: firma@swissbit-germany.com  
Page 3  
of 12  
Data Sheet  
Rev.1.0  
09.04.2008  
Front Side  
PIN Name  
Back Side  
PIN Name PIN #  
PIN #  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
45  
46  
PIN #  
72  
73  
74  
75  
76  
77  
78  
79  
80  
81  
82  
83  
84  
85  
86  
87  
88  
89  
90  
91  
92  
PIN Name  
DQ48  
DQ49  
VSS  
PIN #  
118  
119  
120  
121  
122  
123  
124  
125  
126  
127  
128  
129  
130  
131  
132  
133  
134  
135  
136  
137  
138  
PIN Name  
VSS  
A11  
164  
165  
166  
167  
168  
169  
170  
171  
172  
173  
174  
175  
176  
177  
178  
179  
180  
181  
182  
183  
184  
VDDQ  
DQ52  
DQ53  
NC  
A9  
DM2  
VDD  
DQ18  
A7  
NC  
DQ22  
A8  
VDDQ  
DQ19  
A5  
NC  
VDD  
VDDQ  
DQS6  
DQ50  
DQ51  
VSS  
DQ23  
VSS  
DM6  
DQ54  
DQ55  
VDDQ  
NC  
DQ24  
VSS  
A6  
DQ28  
DQ29  
VDDQ  
DM3  
A3  
DQ25  
DQS3  
A4  
NC  
DQ60  
DQ61  
VSS  
DQ56  
DQ57  
VDD  
VDD  
DQ26  
DQ27  
A2  
DQ30  
VSS  
DM7  
DQ62  
DQ63  
VDDQ  
SA0  
DQS7  
DQ58  
DQ59  
VSS  
DQ31  
NC  
VSS  
A1  
NC  
NC  
NC  
VDDQ  
CK0  
/CK0  
SA1  
NC  
SDA  
SCL  
SA2  
VDD  
VDDSPD  
Swissbit Germany AG  
Wolfener Straße 36  
D-12681 Berlin  
Fon: +49 (0) 30 93 69 54 - 0  
Fax: +49 (0) 30 93 69 54 - 55  
www.swissbit-germany.com  
eMail: firma@swissbit-germany.com  
Page 4  
of 12  
Data Sheet  
Rev.1.0  
09.04.2008  
FUNCTIONAL BLOCK DIAGRAMM 512DDR SDRAM DIMM 1RANK; NON-ECC  
Swissbit Germany AG  
Wolfener Straße 36  
D-12681 Berlin  
Fon: +49 (0) 30 93 69 54 - 0  
Fax: +49 (0) 30 93 69 54 - 55  
www.swissbit-germany.com  
eMail: firma@swissbit-germany.com  
Page 5  
of 12  
Data Sheet  
Rev.1.0  
09.04.2008  
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS  
(0°C TA + 70°C ; V DD = +2.5V ± 0.2V, VDDQ = +2.5V ± 0.2V) see Note 1 on Page 9  
PARAMETER/ CONDITION  
Supply Voltage  
I/O Supply Voltage  
SYMBOL  
VDD  
MIN  
2.3  
2.3  
MAX  
2.7  
2.7  
UNITS  
V
V
V
V
V
V
VDDQ  
VREF  
VTT  
VIH (DC)  
VIL (DC)  
I/O Reference Voltage  
0.49 x VDDQ  
VREF – 0.04  
VREF + 0.15  
-0.3  
0.51x VDDQ  
VREF + 0.04  
VDD + 0.3  
VREF – 0.15  
I/O Termination Voltage (system)  
Input High (Logic 1) Voltage  
Input Low (Logic 0) Voltage  
INPUT LEAKAGE CURRENT  
Any input 0V VIN  
VDD, VREF pin 0V VIN 1.35V  
II  
-10  
-10  
10  
10  
µA  
µA  
(All other pins not under test = 0V)  
OUTPUT LEAKAGE CURRENT  
IOZ  
(DQS are disabled; 0V VOUT  
VDDQ)  
OUTPUT LEVELS:  
High Current (VOUT = VDDQ-0.373V,minimum VREF,  
minimum VTT )  
Low Current (VOUT =0.373V, maximum VREF,  
maximum VTT )  
IOH  
IOL  
-16.8  
16.8  
-
-
mA  
mA  
AC INPUT OPERATING CONDITIONS  
(0°C TA + 70°C ; V DD = +2.5V ± 0.2V, VDDQ = +2.5V ± 0.2V) see Note 1 on Page 9  
PARAMETER/ CONDITION  
Input High (Logic 1) Voltage  
Input Low (Logic 0) Voltage  
I/O Reference Voltage  
SYMBOL  
VIH (AC)  
MIN  
VREF + 0.310  
-
MAX  
-
VREF - 0.310  
0.51x VDDQ  
UNITS  
V
V
V
VIL (AC)  
VREF(AC)  
0.49 x VDDQ  
CAPACITANCE  
PARAMETER  
SYMBOL  
C10  
MIN  
4.0  
18.0  
18.0  
10.0  
18.0  
MAX  
5.0  
27.0  
27.0  
14.0  
27.0  
UNITS  
pF  
Input/Output Capacitance: DQ, DQS  
Input Capacitance: Command and Address  
Input Capacitance: /S 0,1  
Input Capacitance: CK, /CK  
Input Capacitance: CKE  
C11  
C11  
C12  
C13  
pF  
pF  
pF  
pF  
Swissbit Germany AG  
Wolfener Straße 36  
D-12681 Berlin  
Fon: +49 (0) 30 93 69 54 - 0  
Fax: +49 (0) 30 93 69 54 - 55  
www.swissbit-germany.com  
eMail: firma@swissbit-germany.com  
Page 6  
of 12  
Data Sheet  
Rev.1.0  
09.04.2008  
IDD Specifications AND CONDITIONS  
(0°C TA + 70°C ; V DDQ = +2.5V ± 0.2V, VDD = +2.5V ± 0.2V) see Note 1 on Page 9  
Parameter  
max.  
3200-3033 2700-2533 2100-2533 Unit  
Symb.  
IDDO  
& Test Condition  
OPERATING CURRENT *) : One device bank; Active-  
Precharge;  
mA  
1240  
1040  
920  
tRC= tRC (Min); tCK = tCK (Min); DQ, DM and DQS inputs  
changing  
once per clock cycle; Address and control inputs  
changing once every two clock cycles  
OPERATING CURRENT :*)  
One device bank; Active-Read-Precharge;  
Burst = 2; tRC= tRC (Min);  
IDD1  
mA  
1480  
1280  
1160  
tCK = tCK (Min);IOUT = 0mA;  
Address and control inputs changing once per clock  
cycle  
PRECHARGE POWER-DOWN STANDBY CURRENT: IDD2P  
All device banks idle;  
Power-down mode;  
mA  
mA  
40  
40  
40  
tCK = tCK (Min); CKE = (LOW)  
IDLE STANDBY CURRENT: CS# = HIGH; All device  
banks idle;  
IDD2F  
440  
360  
320  
tCK = tCK (Min); CKE= HIGH; Address and other control  
inputs changing once per clock cycle.  
VIN = VREF for DQ, DQS, and DM  
ACTIVE POWER-DOWN STANDBY CURRENT: One  
device bank active; Power-down mode; tCK = tCK  
(Min);CKE = LOW  
ACTIVE STANDBY CURRENT: CS# = HIGH; CKE =  
HIGH; One device bank; Active-Precharge; tRC= tRAS  
(Max); tCK = tCK (Min); DQ, DM and DQS inputs  
changing twice per clock cycle; Address and other  
control inputs changing once per clock cycle  
OPERATING CURRENT:  
IDD3P  
mA  
mA  
360  
480  
280  
400  
240  
360  
IDD3N  
IDD4R  
mA  
mA  
1520  
1560  
1320  
1400  
1160  
1080  
Burst = 2; Reads; Continous burst; One bank active;  
Address and control inputs changing once per clock  
cycle; tCK = tCK (Min);  
IOUT = 0mA  
OPERATING CURRENT: Burst = 2; Writes; Continuous IDD4W  
burst; One device bank active; Address and control  
inputs changing once per clock cycle; tCK = tCK (Min);  
DQ, DM, and DQS inputs changing twice per clock  
cycle  
AUTO  
REFRESH  
CURRENT  
tRC = tRC (Min)  
IDD5  
IDD6  
IDD7  
mA  
mA  
2760  
88  
2320  
80  
2240  
80  
tRC = 7.8125µs  
SELF REFRESH CURRENT: CKE 0.2V  
mA  
mA  
40  
40  
40  
OPERATING CURRENT*): Four device bank interleaving  
READs (BL =4) with auto precharge, tRC = tRC (Min);  
tCK = tCK (Min); Address and control inputs change only during  
Active READ, or WRITE commands  
IDD8  
3600  
3240  
2800  
*) Value calculated as one module rank in this operating condition, and all other module ranks in IDD2P (CKE LOW)  
mode.  
Swissbit Germany AG  
Wolfener Straße 36  
D-12681 Berlin  
Fon: +49 (0) 30 93 69 54 - 0  
Fax: +49 (0) 30 93 69 54 - 55  
www.swissbit-germany.com  
eMail: firma@swissbit-germany.com  
Page 7  
of 12  
Data Sheet  
Rev.1.0  
09.04.2008  
DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND RECOMMENDED  
AC OPERATING CONDITIONS  
(0°C TA + 70°C ; V DDQ = +2.5V ± 0.2V, VDD = +2.5V ± 0.2V) see Note 1 on Page 9  
AC CHARACTERISTICS  
3200-3033  
2700-2533  
2100-2533  
MIN MAX  
PARAMETER  
SYMBOL  
tAC  
MIN  
MAX  
+0.70  
0.55  
0.55  
13.0  
13.0  
13.0  
MIN  
MAX  
+0.70  
0.55  
0.55  
13.0  
13.0  
Unit  
ns  
tCK  
Access window of DQS CK/CK#  
CK high-level width  
CK low-level width  
-0.70  
0.45  
0.45  
7.5  
6.0  
5.0  
-0.70  
0.45  
0.45  
7.5  
-0.75  
0.45  
0.45  
10  
+0.75  
0.55  
0.55  
13.0  
13.0  
tCH  
tCL  
tck (2.0)  
tck (2.5)  
tck (3.0)  
tCK  
Clock cycle time  
CL=2.0  
6.0  
7.5  
ns  
ns  
CL=2.5  
CL=3.0  
DQ and DM input hold time relative  
to DQS  
DQ and DM input setup time relative  
to DQS  
DQ and DM input pulse width  
( for each input )  
Access window of DQS from  
CK/CK#  
0.40  
0.40  
1.75  
-0.6  
0.45  
0.45  
1.75  
-0.6  
0.5  
0.5  
ns  
ns  
ns  
ns  
tDH  
tDS  
1.75  
-0.75  
tDIPW  
+0.6  
+0.6  
+0.75  
tDQSCK  
tDQSH  
tDQSL  
DQS input high pulse width  
DQS input low pulse width  
0.35  
0.35  
0.35  
0.35  
0.35  
0.35  
tCK  
tCK  
DQS –DQ skew, DQS to last DQ  
valid, per group, per access  
Write command to first DQS latching  
transition  
DQS falling edge to CK rising- setup  
time  
DQS falling edge from CK rising-  
hold time  
Half clock period  
0.40  
1.28  
0.45  
1.25  
0.5  
ns  
tCK  
tCK  
tCK  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tDQSQ  
tDQSS  
tDSS  
tDSH  
tHP  
0.72  
0.2  
0.75  
0.2  
0.75  
0.2  
1.25  
0.2  
0.2  
0.2  
tch,  
tcl  
tch,  
tcl  
tch,  
tcl  
Data-out high-impedance window  
from CK/CK#  
Data-out low-impedance window  
from CK/CK#  
Address and control input hold time  
( fast slew rate )  
Address and control input setup time  
( fast slew rate )  
Address and control input hold time  
( slow slew rate )  
Address and control input setup time  
( slow slew rate )  
LOAD MODE REGISTER command  
cycle time  
Adress and control input pulse width  
(for each input)  
+0.7  
+0.7  
+0.75  
tHZ  
-0.7  
0.6  
0.6  
0.6  
0.6  
10  
-0.7  
0.75  
0.75  
0.8  
-0.75  
0.90  
0.90  
1
tLZ  
tIHF  
tISF  
tIHS  
0.8  
1
tISS  
12  
15  
tMRD  
tIPW  
2.2  
2.2  
2.2  
DQ-DQS hold, DQS to first DQ to go  
non-valid, per access  
Data hold skew factor  
tHP - tQHS  
0.5  
tHP - tQHS  
0.6  
tHP - tQHS  
0.75  
ns  
ns  
tQH  
tQHS  
Swissbit Germany AG  
Wolfener Straße 36  
D-12681 Berlin  
Fon: +49 (0) 30 93 69 54 - 0  
Fax: +49 (0) 30 93 69 54 - 55  
www.swissbit-germany.com  
eMail: firma@swissbit-germany.com  
Page 8  
of 12  
Data Sheet  
Rev.1.0  
09.04.2008  
AC CHARACTERISTICS  
3200-3033  
2700-2533  
2100-2533  
PARAMETER  
ACTIVE to PRECHARGE command  
SYMBOL  
tRAS  
MIN  
40  
MAX  
70.000  
MIN  
42  
MAX  
70.000  
MIN  
40  
MAX  
120.000  
Unit  
ns  
ACTIVE to READ with Auto  
precharge  
command  
ACTIVE to ACTIVE/AUTO  
REFRESH  
ns  
tRAP  
15  
15  
60  
20  
65  
ns  
tRC  
55  
command period  
AUTO REFRESH command period  
ns  
ns  
ns  
tCK  
tCK  
ns  
70  
15  
15  
0.9  
0.4  
72  
15  
15  
0.9  
0.4  
75  
20  
20  
0.9  
0.4  
tRFC  
tRCD  
tRP  
tRPRE  
tRPST  
tRRD  
ACTIVE to READ or WRITE delay  
PRECHARGE command period  
DQS read preamble  
DQS read postamble  
ACTIVE bank a to ACTIVE bank b  
command  
1.1  
0.6  
1.1  
0.6  
1.1  
0.6  
10  
12  
15  
DQS write preamble  
DQS write preamble setup time  
DQS write postamble  
Write recovery time  
Internal WRITE to READ command  
delay  
tCK  
ns  
tCK  
ns  
tCK  
0.25  
0
0.4  
15  
0.25  
0
0.4  
15  
0.25  
0
0.4  
15  
tWPRE  
tWPRES  
tWPST  
tWR  
0.6  
0.6  
0.6  
tWTR  
2
1
1
Data valid output window  
REFRESH to REFRESH command  
interval  
Average periodic refresh interval  
Terminating voltage delay to VDD  
ns  
µs  
tQH - tDQSQ  
tQH - tDQSQ  
tQH - tDQSQ  
na  
tREFC  
70.3  
7.8  
70.3  
7.8  
70.3  
7.8  
µs  
ns  
ns  
tREFI  
tVTD  
tXSNR  
0
0
0
Exit SELF REFRESH to non-READ  
command  
70  
75  
75  
Exit SELF REFRESH to READ  
command  
tCK  
tXSRD  
200  
200  
200  
Note 1: Values for AC timing, IDD, and electrical AC and DC characteristics might have been collected within the  
standard temperature range and at nominal reference/supply voltage levels, but the related specifications and  
device operation are guaranteed for the full voltage range specified and for the corresponding field of operation  
according to the actual temperature grade of the module (extended E, I or W; refer to the environmental conditions  
for more details).  
Swissbit Germany AG  
Wolfener Straße 36  
D-12681 Berlin  
Fon: +49 (0) 30 93 69 54 - 0  
Fax: +49 (0) 30 93 69 54 - 55  
www.swissbit-germany.com  
eMail: firma@swissbit-germany.com  
Page 9  
of 12  
Data Sheet  
Rev.1.0  
09.04.2008  
SERIAL PRESENCE-DETECT MATRIX  
BYTE  
DESCRIPTION  
NUMBER OF SPD BYTES USED  
TOTAL NUMBER OF BYTES IN SPD DEVICE  
FUNDAMENTAL MEMORY TYPE  
NUMBER OF ROW ADDRESSES ON ASSEMBLY  
NUMBER OF COLUMN ADDRESSES ON ASSEMBLY  
NUMBER OF PHYSICAL BANKS ON DIMM  
MODULE DATA WIDTH  
3200-3033  
2700-2533  
0x80  
2100-2533  
0
1
2
3
4
5
6
7
8
9
0x08  
0x07  
0x0d  
0x0b  
0x01  
0x40  
0x00  
0x04  
MODULE DATA WIDTH (continued)  
MODULE VOLTAGE INTERFACE LEVELS (VDDQ  
SDRAM CYCLE TIME, (tCK  
(CAS LATENCY =2.5 (2700, 2100) ; CL=3* (3200)  
SDRAM ACCESS FROM CLOCK, (tAC  
)
)
0x50  
0x70  
0x60  
0x70  
0x75  
0x75  
10  
)
(CAS LATENCY =2.5 (2700, 2100); CL=3* (3200))  
11  
12  
13  
14  
15  
MODULE CONFIGURATION TYPE  
REFRESH RATE/ TYPE  
SDRAM DEVICE WIDTH (PRIMARY SDRAM)  
ERROR- CHECKING SDRAM DATA WIDTH  
MINIMUM CLOCK DELAY, BACK- TO- BACK  
RANDOM COLUMN ACCESS  
0x00  
0x82  
0x08  
0x00  
0x01  
16  
17  
18  
19  
20  
21  
22  
23  
BURST LENGTHS SUPPORTED  
0x0e  
0x04  
0x0c  
0x01  
0x02  
0x20  
0xc0  
NUMBER OF BANKS ON SDRAM DEVICE  
CAS LATENCIES SUPPORTED  
CS LATENCY  
WE LATENCY  
SDRAM MODULE ATTRIBUTES  
SDRAM DEVICE ATTRIBUTES: GENERAL  
0x1c  
0x0c  
SDRAM CYCLE TIME, (tCK  
(CAS LATENCY=2(2700, 2100) CL=2,5*(3200))  
SDRAM ACCESS FROM CK, (tAC  
(CAS LATENCY=2(2700, 2100) CL=2.5*(3200)  
SDRAM CYCLE TIME, (tCK  
(CAS LATENCY=1.5(2700, 2100) CL=2*(3200))  
SDRAM ACCESS FROM CK, (tAC  
(CAS LATENCY=1.5(2700, 2100) CL=2*(3200)  
MINIMUM ROW PRECHARGE TIME, (tRP  
MINIMUM ROW ACTIVE TO ROW ACTIVE, (tRRD  
MINIMUM RAS# TO CAS# DELAY, (tRCD  
)
0x60  
0x70  
0x75  
0x75  
0x75  
0x70  
0x00  
0x00  
0xa0  
0x75  
0x00  
0x00  
24  
25  
26  
)
)
)
27  
28  
29  
30  
31  
)
0x3c  
0x28  
0x3c  
0x28  
0x48  
0x30  
0x48  
0x2a  
0x80  
0x50  
0x3c  
0x50  
0x2d  
)
)
MINIMUM RAS# PULSE WIDTH, (tRAS  
MODULE BANK DENSITY  
)
Swissbit Germany AG  
Wolfener Straße 36  
D-12681 Berlin  
Fon: +49 (0) 30 93 69 54 - 0  
Fax: +49 (0) 30 93 69 54 - 55  
www.swissbit-germany.com  
eMail: firma@swissbit-germany.com  
Page 10  
of 12  
Data Sheet  
Rev.1.0  
09.04.2008  
SERIAL PRESENCE-DETECT MATRIX (continued)  
BYTE  
32  
DESCRIPTION  
ADDRESS AND COMMAND SETUP TIME, (tIS)  
3200-3033  
0x60  
2700-2533  
0x80  
2100-2533  
0xa0  
33  
ADDRESS AND COOMAND HOLD TIME, (tIH)  
0x60  
0x80  
0xa0  
34  
35  
DATA/DATA MASK INPUT SETUP TIME, (tDS  
DATA/DATA MASK INPUT HOLD TIME, (tDH  
)
0x40  
0x40  
0x45  
0x45  
0x50  
0x50  
)
36-40 RESERVED  
0x00  
0x00  
0x00  
41  
42  
MIN ACTIVE AUTO REFRESH TIME (tRC  
MINIMUM AUTO REFRESH TO ACTIVE/  
AUTO REFRESH COMMAND PERIOD, (tRFC)  
SDRAM DEVICE MAX CYCLE TIME (tCKMAX  
SDRAM DEVICE MAX DQS-DQ SKEW TIME  
(tDQSQ  
SDRAM DEVICE MAX READ DATA HOLD SKEW  
FACTOR (tQHS  
46-61 RESERVED  
)
0x37  
0x3c  
0x46  
0x46  
0x30  
0x28  
0x48  
0x30  
0x2d  
0x46  
0x30  
0x3c  
43  
44  
)
)
45  
0x50  
0x60  
0xa0  
)
0x00  
0x11  
0xC2  
7F  
7F  
7F  
62  
63  
64  
65  
66  
67  
SPD REVISION  
CHECKSUM FOR BYTES 0-62  
MANUFACTURER`S JEDEC ID CODE  
MANUFACTURER`S JEDEC ID CODE  
MANUFACTURER`S JEDEC ID CODE  
MANUFACTURER`S JEDEC ID CODE  
(continued)  
0x0F  
0xD8  
DA  
72  
MANUFACTURING LOCATION  
x
73-90 MODULE PART NUMBER (ASCII)  
“SDU06464B5B61MT-xx”  
91  
92  
93  
94  
PCB IDENTIFICATION CODE  
x
x
x
x
x
IDENTIFICATION CODE (continued)  
YEAR OF MANUFACTURE IN BCD  
WEEK OF MANUFACTURE IN BCD  
95-98 MODULE SERIAL NUMBER  
x
x
99-127 MANUFACTURER-SPECIFIC DATA (RSVD)  
Part Number Code  
S
1
D
2
U
3
064 64 B5  
B
7
6
8
1
9
MT  
10  
-
50  
11  
*
12  
R
13  
4
5
6
*RoHs compl.  
Swissbit AG  
SDRAM DDR  
184 Pin Unbuffered 2.5V  
Depth (512MB)  
DDR-400MHz  
Chip Vendor (MICRON)  
1 Module Rank  
Chip Rev. F  
Width  
PCB-Type (BDM982A)  
Chip organisation x8  
* optional / additional information  
Swissbit Germany AG  
Wolfener Straße 36  
D-12681 Berlin  
Fon: +49 (0) 30 93 69 54 - 0  
Fax: +49 (0) 30 93 69 54 - 55  
www.swissbit-germany.com  
eMail: firma@swissbit-germany.com  
Page 11  
of 12  
Data Sheet  
Rev.1.0  
09.04.2008  
Locations  
Swissbit AG  
Industriestrasse 4 – 8  
CH – 9552 Bronschhofen  
Switzerland  
Phone: +41 (0)71 913 72 66  
Fax: +41 (0)71 913 74 50  
_____________________________  
Swissbit Germany GmbH  
Wolfener Strasse 36  
D – 12681 Berlin  
Germany  
Phone: +49 (0)30 93 69 54 – 0  
Fax: +49 (0)30 93 69 54 – 55  
_____________________________  
Swissbit NA, Inc.  
18 Willett Avenue, Suite 203  
Port Chester, NY 10573  
USA  
Phone: +1 914 935 1400  
Fax: +1 914 935 9865  
_____________________________  
Swissbit NA, Inc.  
7801 North Lamar Boulevard, Suite E – 186  
Austin, TX 78752  
USA  
Phone: +1 512 302 9001  
Fax: +1 512 302 4808  
Swissbit Germany AG  
Wolfener Straße 36  
D-12681 Berlin  
Fon: +49 (0) 30 93 69 54 - 0  
Fax: +49 (0) 30 93 69 54 - 55  
www.swissbit-germany.com  
eMail: firma@swissbit-germany.com  
Page 12  
of 12  

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