SGBJ20M [ETC]
Glass Passivated Single Phase Bridge Rectifiers;
| 型号： | SGBJ20M |
| 厂家： | 
ETC |
| 描述： | Glass Passivated Single Phase Bridge Rectifiers |
| 文件： | 总3页 (文件大小：167K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SGBJ20D thru SGBJ20M
Glass Passivated Single
Phase Bridge Rectifiers
Reverse Voltage 200 to 1000V
Forward Current 20.Amp
Features
y
y
y
Glass passivated die construction
Ideal for printed circuit boards
Plastic material used carries UL
flammability recognition 94V-0
High surge current capability
High temperature soldering guaranteed:
265℃/10 seconds, 0.375” (9.5mm) lead
length, 5lbs. (2.3kg) tension
y
y
Circuit
Mechanical Data
Case: Molded plastic case
Terminals: Plated leads solderable per
MIL-STD-750, Method 2026
Polarity: Marked on Body
Mounting Position: Any
+
-
Module Type
TYPE
VRRM
200V
400V
600V
800V
1000V
VRSM
300V
500V
700V
900V
1100V
SGBJ20D
SGBJ20G
SGBJ20J
SGBJ20K
SGBJ20M
Maximum Ratings and Thermal Characteristics (TA = 25℃unless otherwise noted)
Symbol
Conditions
Values
Units
20
A
Maximum average forward output rectified current Tc =100℃
IF(AV)
Peak forward surge current single half sine-wave superimposed
on rated load (JEDEC Method)
220
A
IFSM
i2t
Visol
A2s
V
200
Rating for fusing (t<8.3ms)
a.c.50HZ;r.m.s.;1min
2500
RθJA
RθJC
22 (1)
Maximum thermal resistance per leg
℃/W
1.5 (2)
TOR
Mounting Torque (Recommended torque:0.5 N.m)
Operating Junction and storage temperature range
Approximate Weight
0.8
-55 to +150
7.0
N.m
℃
Tj, TSTG
Weight
g
Electrical Characteristics (TA = 25℃unless otherwise noted)
Symbol
Conditions
Values
Units
VF
Maximum Instantaneous Forward Voltage per leg
IFM =10.0A
1.0
V
Maximum DC reverse current at rated
DC blocking voltage per leg
TA = 25℃
TA = 125℃
5.0
500
IR
µA
Notes: (1) Junction to ambient without heatsink
(2) Junction to case with heatsink
(3) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for
maximum heat transfer with #6 screw
Document Number: SGBJ20D thru SGBJ20M
Jan.12, 2011
www.smsemi.com
1
SGBJ20D thru SGBJ20M
Performance Curves
100
25
20
15
10
5
10
1.0
Tj=25ºC
Pulse Width=300μs
Resistive or
Inductive load
0
0.1
0
50
100
150
0.5
0.7
0.9
1.1
1.3
1.5
TA, TEMPERATURE (ºC)
Fig.1 Forward Current Derating Curve
VF, INSTANTANEOUSFWDVOLTAGE (V)
Fig.2 Typical Forward Characteristics
300
100
Single half-sine-wave
(JEDEC method)
240
180
120
Tj=25ºC
10
60
0
Tj=25ºC
f =1MHZ
1
1
10
NUMBER OF CYCLES AT 60Hz
Fig.3 Maximum Non-Repetitive Surge Current
100
1
10
100
VR, REVERSE VOLTAGE (V)
Fig.4 Typical Junction Capacitance
1000
100
10
Tj=100ºC
1.0
0.1
Tj=25ºC
0.01
0
20
40
60
80
100
120
140
RATED PERCENT OF PEAK REVERSE VOLTAGE (%)
Fig.5 Typical Reverse Characteristics
Document Number: SGBJ20D thru SGBJ20M
Jan.12, 2011
www.smsemi.com
2
SGBJ20D thru SGBJ20M
Package Outline Information
CASE: GBJ
1.193(30.3)
1.170(29.7)
0.150(3.8)
0.134(3.4)
0.134(3.4)
0.118(3.0)
0.799(20.3)
0.775(19.7)
0.441(11.2)
0.425(10.8)
0.189(4.8)
0.173(4.4)
0.197
(5.0)
-
+
~
~
0.165(4.2)
0.150(3.8)
0.106(2.7)
0.091(2.3)
0.094(2.4)
0.079(2.0)
0.697(17.7) 0.114(2.9)
0.677(17.2) 0.098(2.5)
0.031(0.8)
0.024(0.6)
0.043(1.1)
0.035(0.9)
0.409(10.4) 0.303(7.7)
0.394(10.0) 0.287(7.3)
(2×)
Dimensions in inches (mm)
Document Number: SGBJ20D thru SGBJ20M
Jan.12, 2011
www.smsemi.com
3
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