SGBU4M [ETC]
Glass Passivated Single Phase Bridge Rectifiers;型号: | SGBU4M |
厂家: | ETC |
描述: | Glass Passivated Single Phase Bridge Rectifiers |
文件: | 总3页 (文件大小:147K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SGBU4D thru SGBU4M
Glass Passivated Single
Phase Bridge Rectifiers
Reverse Voltage 200 to 1000V
Forward Current 4.0 Amp
Features
y
y
y
Glass passivated die construction
Ideal for printed circuit boards
Plastic material used carries UL
flammability recognition 94V-0
High surge current capability
High temperature soldering guaranteed:
265℃/10 seconds, 0.375” (9.5mm) lead
length, 5lbs. (2.3kg) tension
y
y
Circuit
Mechanical Data
Case: Molded plastic case
Terminals: Plated leads solderable per
MIL-STD-750, Method 2026
Polarity: Marked on Body
Mounting Position: Any
+
-
Module Type
TYPE
VRRM
200V
400V
600V
800V
1000V
VRSM
300V
500V
700V
900V
1100V
SGBU4D
SGBU4G
SGBU4J
SGBU4K
SGBU4M
Maximum Ratings and Thermal Characteristics (TA = 25℃unless otherwise noted)
Symbol
IF(AV)
Conditions
Values
Units
Maximum average forward output rectified current Tc =100℃
4.0 (1)
A
Peak forward surge current single half sine-wave superimposed
on rated load (JEDEC Method)
90
A
IFSM
i2t
Visol
A2s
V
33
Rating for fusing (t<8.3ms)
a.c.50HZ;r.m.s.;1min
2500
RθJA
RθJC
22(2)
Maximum thermal resistance per leg
℃/W
4.2 (3)
-55 to +150
4.0
℃
Tj, TSTG
Weight
Operating Junction and storage temperature range
Approximate Weight
g
Electrical Characteristics (TA = 25℃unless otherwise noted)
Symbol
Conditions
Values
Units
VF
Maximum Instantaneous Forward Voltage per leg
IFM =2.0A
1.1
V
Maximum DC reverse current at rated
DC blocking voltage per leg
TA = 25℃
TA = 125℃
5.0
500
IR
µA
Notes: (1) Heat sink, TC mouting-4x4x0.15cm thick copper plate
(2) Junction to ambient without heatsink
(3) Junction to case with heatsink
(4) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for
maximum heat transfer with M3 screw
Document Number: SGBU4D thru SGBU4M
Jun.25, 2010
www.smsemi.com
1
SGBU4D thru SGBU4M
Performance Curves
10
5
4
3
2
1.0
0.1
1
0
Tj=25ºC
Pulse Width=300μs
0.01
0.6
0.8
1.0
1.2
0
50
100
150
VF, INSTANTANEOUS FWD VOLTAGE (V)
Fig.2 Typical Forward Characteristics, per element
TA, AMBIENT TEMPERATURE (ºC)
Fig.1 Forward Current Derating Curve
120
100
80
1000
Tj=125ºC
8.3ms Single Half-Sine-Wave
60
40
20
0
100
Tj=25ºC
f =1MHZ
10
1
10
100
0.1
1
10
100
NUMBER OF CYCLES AT 60Hz
VR, REVERSE VOLTAGE (V)
Fig.3 Max Non-Repetitive Forward Surge Current
Fig.4 Typ Junction Capacitance per element
10
Tj=125ºC
1.0
0.1
Tj=25ºC
0.01
0
20
40
60
80
100
120
140
RATED PERCENT OF PEAK REVERSE VOLTAGE (%)
Fig.5 Typical Reverse Characteristics
Document Number:SGBU4D thru SGBU4M
Jun.25, 2010
www.smsemi.com
2
SGBU4D thru SGBU4M
Package Outline Information
CASE: GBU
0.880(22.3)
0.860(21.8)
0.140(3.56)
0.130(3.30)
0.125(3.2)
×45°
Chamfer
0.310(7.9)
0.290(7.4)
0.160(4.1)
0.140(3.5)
0.740(18.8)
0.720(18.3)
0.085(2.16)
0.065(1.65)
0.075
(1.9)R
-
+
~
~
0.080(2.03)
0.060(1.52)
0.710(18.0)
0.690(17.5)
0.085(2.16)
0.075(1.90)
0.100(2.54)
0.085(2.16)
0.026(0.67)
0.020(0.52)
0.080(2.03)
0.065(1.65)
0.050(1.27)
0.040(1.02)
0.190(4.83)
0.210(5.33)
Dimensions in inches (mm)
Document Number: SGBU4D thru SGBU4M
Jun.25, 2010
www.smsemi.com
3
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