SIT1602BC-11-18E-24.000000D

SiT1602B

Low Power, Standard Frequency Oscillator

Features

Applications

◼

52 standard frequencies between 3.57 MHz and

77.76 MHz

◼

Ideal for DSC, DVC, DVR, IP CAM, Tablets, e-Books,

SSD, GPON, EPON, etc

◼

100% pin-to-pin drop-in replacement to quartz-based XO

Excellent total frequency stability as low as ±20 ppm

Operating temperature from -40°C to 85°C. For 125°C

and/or -55°C options, refer to SiT1618, SiT8918, SiT8920

Low power consumption of 3.5 mA typical at 1.8 V

Qualify just one device with 1.62 V to 3.63 V continuous

supply voltage

◼

Ideal for high-speed serial protocols such as: USB,

SATA, SAS, Firewire, 100M/1G/10G Ethernet, etc.

◼

Standby mode for longer battery life

Fast startup time of 5 ms

LVCMOS/HCMOS compatible output

Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0,

3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm x mm

Instant samples with Time Machine II and Field

Programmable Oscillators

RoHS and REACH compliant, Pb-free, Halogen-free

and Antimony-free

◼

For AEC-Q100 oscillators, refer to SiT8924 and SiT8925

Electrical Characteristics

All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise

stated. Typical values are at 25°C and nominal supply voltage.

Table 1. Electrical Characteristics

Condition

Parameters

Symbol

Min.

Typ.

Max.

Unit

Frequency Range

52 standard frequencies between

3.57 MHz and 77.76 MHz

Refer to Table 13 for the exact list of supported frequencies

MHz

Output Frequency Range

f

Frequency Stability and Aging

Inclusive of initial tolerance at 25°C, 1st year aging at 25°C,

and variations over operating temperature, rated power

supply voltage and load.

-20

-25

-50

–

+20

+25

+50

ppm

Frequency Stability

F_stab

T_use

Operating Temperature Range

-20

-40

–

+70

+85

°C

Extended Commercial

Industrial

Operating Temperature Range

Supply Voltage Options

Supply Voltage and Current Consumption

Contact SiTime for 1.5 V support

1.62

2.25

2.52

2.7

1.8

2.5

2.8

3.0

3.3

–

1.98

2.75

3.08

3.3

V

Vdd_1.8

Vdd_2.5

Vdd_2.8

Vdd_3.0

Vdd_3.3

Vdd_XX

Vdd_YY

Idd

2.97

2.25

1.62

3.63

–

No load condition, f = 20 MHz, Vdd_2.8, Vdd_3.0, Vdd_3.3,

Vdd_XX, Vdd_YY

Current Consumption

–

3.8

4.5

mA

–

3.7

3.5

4.2

4.1

mA

No load condition, f = 20 MHz, Vdd_2.5

No load condition, f = 20 MHz, Vdd_1.8

Vdd_2.5, Vdd_2.8, Vdd_3.0, Vdd_3.3, Vdd_XX, Vdd_YY.

OE = GND, Output in high-Z state

OE Disable Current

Standby Current

I_OD

I_std

–

4.2

4.0

4.3

mA

A

Vdd_1.8. OE = GND, Output in high-Z state

ST = GND, Vdd_2.8, Vdd_3.0, Vdd_3.3, Vdd_XX, Vdd_YY.

Output is weakly pulled down

2.6

–

1.4

0.6

2.5

1.3

ST = GND, Vdd_2.5, Output is weakly pulled down

ST = GND, Vdd_1.8, Output is weakly pulled down

A

Rev 1.07

10 March 2021

www.sitime.com

SiT1602B Low Power, Standard Frequency Oscillator

Table 1. Electrical Characteristics (continued)

Parameters

Symbol

Min.

Typ.

Max.

Unit

Condition

LVCMOS Output Characteristics

Duty Cycle

DC

45

–

1

55

2

%

ns

All Vdds. See Duty Cycle definition in Figure 3 and Footnote 6

20% - 80% Vdd_2.5, Vdd_2.8, Vdd_3.0, Vdd_3.3

20% - 80% Vdd_1.8

Rise/Fall Time

Tr, Tf

–

1.3

–

2.5

2

ns

–

ns

20% - 80% Vdd_XX

–

2.7

–

ns

20% - 80% Vdd_YY

Output High Voltage

Output Low Voltage

VOH

VOL

90%

–

Vdd

IOH = -4 mA (Vdd_3.0 and Vdd_3.3)

IOH = -3 mA (Vdd_2.8 and Vdd_ 2.5)

IOH = -2 mA (Vdd_1.8)

–

10%

Vdd

IOH = -4 mA (Vdd_3.0 and Vdd_3.3)

IOH = -3 mA (Vdd_2.8 and Vdd_ 2.5)

IOH = -2 mA (Vdd_1.8)

Input Characteristics

Input High Voltage

Input Low Voltage

VIH

VIL

70%

–

30%

150

–

Vdd

Pin 1, OE or ST

Vdd

k

Pin 1, OE or ST

Input Pull-up Impedance

Z_in

50

2

87

–

Pin 1, OE logic high or logic low, or ST logic high

Pin 1, ST logic low

M

Startup and Resume Timing

Startup Time

T_start

T_oe

–

5

ms

ns

Measured from the time Vdd reaches its rated minimum value

Enable/Disable Time

138

f = 77.76 MHz. For other frequencies,

T_oe = 100 ns + 3*cycles

Resume Time

T_resume

T_jitt

–

5

ms

ps

Measured from the time ST pin crosses 50% threshold

Jitter

RMS Period Jitter

1.8

3

f = 75 MHz, Vdd_1.8, Vdd_2.5, Vdd_2.8, Vdd_3.0, Vdd_3.3,

Vdd_XX,

–

3.3

25

ps

f = 75 MHz, Vdd_YY

Peak-to-peak Period Jitter

RMS Phase Jitter (random)

T_pk

12

f = 75 MHz, Vdd_2.5, Vdd_2.8, Vdd_3.0, Vdd_3.3, Vdd_XX,

Vdd_YY

–

14

30

ps

f = 75 MHz, Vdd_1.8

T_phj

0.5

0.9

f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz.

Vdd_1.8, Vdd_2.5, Vdd_2.8, Vdd_3.0, Vdd_3.3, Vdd_XX

–

1.3

–

2

ps

f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz.

Vdd_1.8, Vdd_2.5, Vdd_2.8, Vdd_3.0, Vdd_3.3, Vdd_XX

1.4

2.3

f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz.

Vdd_YY

–

f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz.

Vdd_YY

Table 2. Pin Description

Symbol

Functionality

H^[1]: specified frequency output

Top View

Output Enable

L: output is high impedance. Only output driver is disabled.

H^[1]: specified frequency output

L: output is low (weak pull down). Device goes to sleep mode. Supply

current reduces to I_std.

Any voltage between 0 and Vdd or Open^[1]: Specified frequency

output. Pin 1 has no function.

OE/S̅ T̅ ̅ /NC

VDD

OUT

1

OE/S̅ T̅ ̅ /NC

Standby

No Connect

GND

2

3

4

GND

OUT

VDD

Power

Output

Power

Electrical ground

Oscillator output

Power supply voltage^[2]

Figure 1. Pin Assignments

Notes:

1. In OE or S̅T̅̅ mode, a pull-up resistor of 10 kΩ or less is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option.

2. A capacitor of value 0.1 µF or higher between Vdd and GND is required.

Rev 1.07

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SiT1602B Low Power, Standard Frequency Oscillator

Table 3. Absolute Maximum Limits

Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance

of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.

Parameter

Min.

-65

-0.5

–

Max.

150

4

Unit

°C

V

StorageTemperature

Vdd

2000

V

ElectrostaticDischarge

Soldering Temperature (follow standard Pb free

soldering guidelines)

–

260

150

°C

JunctionTemperature^[3]

Note:

3. Exceeding this temperature for extended period of time may damage the device.

Table 4. Thermal Consideration^[4]

JA, 4 Layer Board

JA, 2 Layer Board

JC, Bottom

Package

(°C/W)

30

7050

5032

3225

2520

2016

142

97

273

199

212

222

252

24

109

117

152

27

26

36

Note:

4. Refer to JESD51 for JA and JC definitions, and reference layout used to determine the JA and JC values in the above table.

Table 5. Maximum Operating JunctionTemperature^[5]

Max Operating Temperature(ambient)

Maximum Operating JunctionTemperature

70°C

85°C

80°C

95°C

Note:

5. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature.

Table 6. Environmental Compliance

Parameter

Condition/TestMethod

MIL-STD-883F, Method2002

Mechanical Shock

Mechanical Vibration

TemperatureCycle

Solderability

MIL-STD-883F, Method 2007

JESD22, Method A104

MIL-STD-883F, Method2003

MSL1 @ 260°C

Moisture Sensitivity Level

Rev 1.07

Page 3 of 18

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SiT1602B Low Power, Standard Frequency Oscillator

Test Circuit and Waveform^[6]

Vdd

Vout

Test Point

tr

tf

4

3

80% Vdd

50%

Power

Supply

0.1 uF

15pF

2

(including probe

and fixture

capacitance)

20% Vdd

1

High Pulse

(TH)

Low Pulse

(TL)

Period

Vdd

OE/ST Function

1 kΩ

Figure 3. Waveform

Figure 2. Test Circuit

Note:

6. Duty Cycle is computed as Duty Cycle =TH/Period.

Timing Diagrams

Vdd

90% Vdd

50% Vdd

ST Voltage

[7]

T_start

T_resume

No Glitch

Pin 4 Voltage

during start up

CLK Output

HZ

T_start: Time to start from power-off

T_resume: Time to resume from ST

Figure 4. Startup Timing (OE/ S̅ T̅ ̅ Mode)

Figure 5. Standby Resume Timing ( S

̅

T

̅

ModeOnly)

Vdd

T_oe

Vdd

50% Vdd

OE Voltage

CLK Output

50% Vdd

T_oe

CLK Output

HZ

T_oe: Time to re-enable the clock output

T_oe: Time to put the output in High Z mode

Figure 6. OE Enable Timing (OE Mode Only)

Figure 7. OE Disable Timing (OE ModeOnly)

Note:

7. SiT1602 has “no runt” pulses and “no glitch” output during startup or resume.

Rev 1.07

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SiT1602B Low Power, Standard Frequency Oscillator

Performance Plots^[8]

1.8 2.5 2.8 3.0 3.3

DUT1

DUT6

DUT2

DUT7

DUT3

DUT8

DUT4

DUT9

DUT5

DUT10

5.2

5.0

4.8

4.6

4.4

4.2

4.0

3.8

3.6

3.4

3.2

3.0

20

15

10

5

0

-5

-10

-15

-20

-40

-20

0

20

40

60

80

10

20

30

40

50

60

70

80

Figure 8. Idd vs Frequency

Figure 9. Frequency vsTemperature

1.8 V 2.5 V 2.8 V 3.0 V 3.3 V

55

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

54

53

52

51

50

49

48

47

46

45

10

20

30

40

50

60

70

80

10

20

30

40

50

60

70

80

Figure 10. RMS Period Jitter vs Frequency

Figure 11. Duty Cycle vs Frequency

1.8 V

2.5 V

2.8 V

3.0 V

3.3 V

1.8 V

2.5 V

2.8 V

3.0 V

3.3 V

2.5

2.0

1.5

1.0

0.5

0.0

2.5

2.0

1.5

1.0

0.5

0.0

-40

-15

10

35

60

85

-40

-15

10

35

60

85

Figure 12. 20%-80% Rise Timevs Temperature

Figure 13. 20%-80% Fall Time vsTemperature

Rev 1.07

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SiT1602B Low Power, Standard Frequency Oscillator

Performance Plots^[8](continued)

1.8 V

2.5 V 2.8 V 3.0 V 3.3

V

1.8 V

2.5 V 2.8 V

3.0 V 3.3 V

0.9

0.8

0.7

0.6

0.5

0.4

2.0

1.8

1.6

1.4

1.2

1.0

10

20

30

40

50

60

70

80

10

20

30

40

50

60

70

80

Figure 14. RMS Integrated Phase JitterRandom

(12 kHz to 20 MHz) vs Frequency^[9]

Figure 15. RMS Integrated Phase Jitter Random

(900 kHz to 20 MHz) vs Frequency^[9]

Notes:

8. All plots are measured with 15 pF load at room temperature, unless otherwise stated.

9. Phase noise plots are measured with Agilent E5052B signal source analyzer. Integration range is up to 5 MHz for carrier frequencies below 40 MHz.

Rev 1.07

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SiT1602B Low Power, Standard Frequency Oscillator

High Output Load Capability

Programmable Drive Strength

The rise/fall time of the input clock varies as a function of

the actual capacitive load the clock drives. At any given

drive strength, the rise/fall time becomes slower as the

output load increases. As an example, for a 3.3 V SiT1602

device with default drive strength setting, the typical rise/fall

time is 1 ns for 15 pF output load. The typical rise/fall time

slows down to 2.6 ns when the output load increases to

45 pF. One can choose to speed up the rise/fall time to

1.83 ns by then increasing the drive strength setting on

the SiT1602.

The SiT1602 includes a programmable drive strength

feature to provide a simple, flexible tool to optimize the clock

rise/fall time for specific applications. Benefits from the

programmable drive strength feature are:

◼

Improves system radiated electromagnetic interference

(EMI) by slowing down the clock rise/fall time

Improves the downstream clock receiver’s (RX) jitter by

decreasing (speeding up) the clock rise/fall time.

Ability to drive large capacitive loads while maintaining

full swing with sharp edge rates.

The SiT1602 can support up to 60 pF or higher in

maximum capacitive loads with drive strength settings.

Refer to the Rise/Fall Time Tables (Table 7 to 11) to

determine the proper drive strength for the desired

combination of output load vs. rise/fall time.

For more detailed information about rise/fall time control

and drive strength selection, see the SiTime Application

Notes section.

EMI Reduction by Slowing Rise/Fall Time

SiT1602 Drive Strength Selection

Figure 16 shows the harmonic power reduction as the

rise/fall times are increased (slowed down). The rise/fall

times are expressed as a ratio of the clock period. For the

ratio of 0.05, the signal is very close to a square wave. For

the ratio of 0.45, the rise/fall times are very close to near-

triangular waveform. These results, for example, show that

the 11^thclock harmonic can be reduced by 35 dB if the

rise/fall edge is increased from 5% of the period to 45% of

the period.

Tables 7 through 11 define the rise/fall time for a given

capacitive load and supply voltage.

1. Select the table that matches the SiT1602 nominal

supply voltage (1.8 V, 2.5 V, 2.8 V, 3.0 V, 3.3 V).

2. Select the capacitive load column that matches the

application requirement (5 pF to 60 pF)

3. Under the capacitive load column, select the desired

rise/fall times.

trise=0.05

trise=0.1

4. The left-most column represents the part number code

10

0

trise=0.15

trise=0.2

trise=0.25

trise=0.3

trise=0.35

trise=0.4

trise=0.45

for the corresponding drive strength.

5. Add the drive strength code to the part number for

-10

-20

-30

-40

-50

-60

-70

-80

ordering purposes.

Calculating Maximum Frequency

Any given rise/fall time in Table 7 through 11 dictates the

maximum frequency under which the oscillator can operate

with guaranteed full output swing over the entire operating

temperature range. This max frequency can be calculated

as the following:

1

3

5

7

9

11

Harmonic number

1

Max Frequency =

Figure 16. Harmonic EMI reduction as a Function

of Slower Rise/Fall Time

5 x Trf_20/80

where Trf_20/80 is the typical value for 20%-80%

rise/fall time.

Jitter Reduction with Faster Rise/Fall Time

Power supply noise can be a source of jitter for the

downstream chipset. One way to reduce this jitter is to

speed up the rise/fall time of the input clock. Some chipsets

may also require faster rise/fall time in order to reduce their

sensitivity to this type of jitter. Refer to the Rise/Fall Time

Tables (Table 7 to Table 11) to determine the proper drive

strength.

Example 1

Calculate f_MAXfor the following condition:

◼

Vdd = 1.8 V (Table 7)

Capacitive Load: 30 pF

Desired Tr/f time = 3 ns (rise/fall time part number

code = E)

◼

f_MAX= 66.666660

Part number for the above example:

SiT1602BIE12-18E-66.666660

Drive strength code is inserted here. Default setting is “-”

Rev 1.07

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SiT1602B Low Power, Standard Frequency Oscillator

Rise/Fall Time (20% to 80%) vs C_LOADTables

Table 8. Vdd = 2.5 V (Vdd_2.5) Rise/Fall Times

for Specific C_LOAD

Table 7. Vdd = 1.8 V (Vdd_1.8) Rise/Fall Times

for Specific C_LOAD

Rise/Fall Time Typ (ns)

Drive Strength \C_LOAD

5pF

15 pF

30 pF

45 pF

60 pF

Drive Strength \C_LOAD

5 pF

15 pF

30 pF

45 pF

60 pF

L

A

R

B

4.13

2.11

1.45

1.09

0.62

8.25

4.27

2.81

2.20

1.28

12.82

7.64

5.16

3.88

2.27

21.45

11.20

7.65

5.86

3.51

27.79

14.49

9.88

7.57

4.45

L

A

R

B

T

E

U

6.16

3.19

2.11

1.65

0.93

0.78

0.70

0.65

11.61

6.35

4.31

3.23

1.91

1.66

1.48

1.30

22.00

11.00

7.65

5.79

3.32

2.94

2.64

2.40

31.27

16.01

10.77

8.18

4.66

4.09

39.91

21.52

14.47

11.08

6.48

T

E or "‐": default

5.74

5.09

0.54

0.43

0.34

1.00

0.96

0.88

2.01

1.81

1.64

3.10

2.79

2.54

4.01

3.65

3.32

3.68

U

F

F or "‐": default

3.35

4.56

Table 9. Vdd = 2.8 V (Vdd_2.8) Rise/Fall Times

for Specific C_LOAD

Table 10. Vdd = 3.0 V (Vdd_3.0) Rise/Fall Times

for Specific C_LOAD

Rise/Fall Time Typ (ns)

Drive Strength \ C_LOAD

5 pF

3.60

1.84

1.22

0.89

0.51

0.38

0.30

0.27

15 pF

7.21

3.71

2.46

1.92

1.00

0.92

0.83

0.76

30 pF

11.97

6.72

4.54

3.39

1.97

1.72

1.55

1.39

45 pF

18.74

9.86

6.76

5.20

3.07

2.71

2.40

2.16

60 pF

24.30

12.68

8.62

6.64

3.90

3.51

3.13

2.85

Drive Strength \ C_LOAD

5 pF

3.77

1.94

1.29

0.97

0.55

15 pF

7.54

3.90

2.57

2.00

1.12

30 pF

12.28

7.03

4.72

3.54

2.08

45 pF

19.57

10.24

7.01

5.43

3.22

60 pF

25.27

13.34

9.06

6.93

4.08

L

A

R

B

L

A

R

B

T

T or "‐": default

E

U

F

E or "‐": default

0.44

0.34

0.29

1.00

0.88

0.81

1.83

1.64

1.48

2.82

2.52

2.29

3.67

3.30

2.99

U

F

Table 11. Vdd = 3.3 V (Vdd_3.3) Rise/Fall Times

for Specific C_LOAD

Rise/Fall Time Typ (ns)

Drive Strength \ C_LOAD

5 pF

3.39

1.74

1.16

0.81

15 pF

6.88

3.50

2.33

1.82

30 pF

11.63

6.38

4.29

3.22

45 pF

17.56

8.98

6.04

4.52

60 pF

23.59

12.19

8.34

L

A

R

B

6.33

T or "‐": default

0.46

0.33

0.28

0.25

1.00

0.87

0.79

0.72

1.86

1.64

1.46

1.31

2.60

2.30

2.05

1.83

3.84

3.35

2.93

2.61

E

U

F

Rev 1.07

Page 8 of 18

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SiT1602B Low Power, Standard Frequency Oscillator

Pin 1 Configuration Options

(OE, S̅ T̅ ̅ , or NC)

Pin 1 of the SiT1602 can be factory-programmed to support

three modes: Output Enable (OE), standby (S ) or

̅ T̅̅

No Connect (NC). These modes can also be programmed

with the Time Machine using field programmabledevices.

Output Enable (OE) Mode

In the OE mode, applying logic Low to the OE pin only

disables the output driver and puts it in Hi-Z mode. The

core of the device continues to operate normally. Power

consumption is reduced due to the inactivity of the output.

When the OE pin is pulled High, the output is typically

enabled in <1 µs.

Figure 17. Startup Waveform vs. Vdd

Standby (S̅ T̅ ̅ ) Mode

In the S̅ T̅̅ mode, a device enters into the standby mode

when Pin 1 pulled Low. All internal circuits of the device are

turned off. The current is reduced to a standby current,

typically in the range of a few µA. When S̅ T̅̅ is pulled High,

the device goes through the “resume” process, which can

take up to 5 ms.

No Connect (NC) Mode

In the NC mode, the device always operates in its normal

mode and outputs the specified frequency regardless of

the logic level on pin 1.

Figure 18. Startup Waveform vs. Vdd

(Zoomed-in View of Figure 17)

Instant Samples with Time Machine and

Field Programmable Oscillators

Table 12 below summarizes the key relevant parameters in

the operation of the device in OE, S̅ T̅̅ , or NCmode.

SiTime supports a field programmable version of the

SiT1602 low power oscillator for fast prototyping and real

time customization of features. The field programmable

devices (FP devices) are available for all five standard

SiT1602 package sizes and can be configured to one’s

exact specification using the Time Machine II, an USB

powered MEMS oscillator programmer.

Table 12. OE vs. S̅ T̅ ̅ vs. NC

OE

S

̅

T

̅

NC

Active current 20 MHz

(max, 1.8 V)

4.1 mA

4 mA

N/A

4.1 mA

OE disable current

(max. 1.8 V)

N/A

Standby current

(typical 1.8 V)

0.6 µA

N/A

Customizable Features of the SiT1602 FP Devices

Include

OE enable time at 77.76 MHz

(max)

138 ns

N/A

◼

52 standard frequencies between 3.75 MHz and

77.76 MHz (Refer to the frequency list on page12)

Resume time from standby

(max, all frequency)

5 ms

Three frequency stability options, ±20 ppm, ±25 ppm,

±50 ppm

Output driver in OE

High Z

weak

pull-down

disable/standby mode

Two operating temperatures, -20 to 70°C or

-40 to 85°C

Output on Startup and Resume

Six supply voltage options, 1.8 V, 2.5 V, 2.8 V, 3.0 V,

3.3 V, 2.25 to 3.65 V, and 1.62 to 3.63 V continuous

The SiT1602 comes with gated output. Its clock output is

accurate to the rated frequency stability within the first pulse

from initial device startup or resume from the standby mode.

◼

Output drive strength

OE, ST or NC mode

In addition, the SiT1602 features “no runt” pulses and “no

glitch” output during startup or resume as shown in the

waveform captures in Figure 17 and Figure 18.

For more information regarding SiTime’s field programma-

ble solutions, see Time Machine II and Field Programmable

Oscillators.

SiT1602 is typically factory-programmed per customer or-

dering codes for volume delivery.

Rev 1.07

Page 9 of 18

www.sitime.com

SiT1602B Low Power, Standard Frequency Oscillator

Dimensions and Patterns

Package Size – Dimensions (Unit: mm)^[10]

2.0 x 1.6 x 0.75 mm

Recommended Land Pattern (Unit: mm)^[11]

1.5

0.9

2.5 x 2.0 x 0.75 mm

1.9

1.1

Rev 1.07

Page 10 of 18

www.sitime.com

SiT1602B Low Power, Standard Frequency Oscillator

Dimensions and Patterns (continued)

Package Size – Dimensions (Unit: mm)^[10]

3.2 x 2.5 x 0.75 mm

Recommended Land Pattern (Unit: mm)^[11]

2.2

1.4

5.0 x 3.2 x 0.75 mm

2.54

1.5

Rev 1.07

Page 11 of 18

www.sitime.com

SiT1602B Low Power, Standard Frequency Oscillator

Dimensions and Patterns (continued)

Package Size – Dimensions (Unit: mm)^[10]

7.0 x 5.0 x 0.90 mm

Recommended Land Pattern (Unit: mm)^[11]

5.08

2.2

Notes:

10. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of

the device.

11. A capacitor of value 0.1 µF or higher between Vdd and GND is required.

Rev 1.07

Page 12 of 18

www.sitime.com

SiT1602B Low Power, Standard Frequency Oscillator

Ordering Information

The Part No. Guide is for reference only.

To customize and build an exact part number, use the SiTime Part Number Generator.

SiT1602BC-12-18E-66.666660D

Packaging

“D”: 8 mm Tape & Reel, 3 ku reel

Part Family

“T”: 12/16 mm Tape & Reel, 3 ku reel

“Y”: 12/16 mm Tape & Reel, 1 ku reel

“E”: 8 mm Tape & Reel, 1 ku reel

Blank for Bulk

“SiT1602”

Revision Letter

“B” is the revision

Frequency

Refer to frequency list below

Temperature Range

“C” Commercial, -20 to 70ºC

“I” Industrial, -40 to 85ºC

Feature Pin

“E” for OutputEnable

“S” forStandby

“N” for No Connect

Output Drive Strength

“–” Default (datasheet limits)

See Tables 7 to 11 for

rise/fall times

Supply Voltage

“18” for 1.8 V ±10%

“25” for 2.5 V ±10%

“28” for 2.8 V ±10%

“30” for 3.0 V ±10%

“33” for 3.3 V ±10%

“XX” for 2.25 V to 3.63 V

“YY” for 1.62 V to 3.63 V

“L”

“A”

“R”

“B”

“T”

“E”

“U”

“F”

Package Size

“7” 2.0 x 1.6 mm

“1” 2.5 x 2.0 mm

“2” 3.2 x 2.5 mm

“3” 5.0 x 3.2 mm

“8” 7.0 x 5.0 mm

Frequency Stability

“1” for ±20 ppm

“2” for ±25 ppm

“3” for ±50 ppm

Table 13. List of Supported Frequencies

3.57 MHz

4 MHz

4.096 MHz

20 MHz

6 MHz

7.3728 MHz

24.576 MHz

33 MHz

8.192 MHz

25 MHz

10 MHz

12 MHz

14 MHz

18.432 MHz

28.6363 MHz

19.2 MHz

30 MHz

24 MHz

32.768 MHz

38 MHz

65 MHz

25.000625 MHz 26 MHz

27 MHz

31.25 MHz

37.5 MHz

62.5 MHz

33.3 MHz

40 MHz

33.33 MHz

40.5 MHz

66.66 MHz

77.76 MHz

33.333 MHz

33.3333 MHz

50 MHz

33.33333 MHz 35.84 MHz

54 MHz 60 MHz

66.66666 MHz 72 MHz

38.4 MHz

66 MHz

48 MHz

66.6 MHz

75 MHz

66.666 MHz

66.6666 MHz

74.175824 MHz 74.176 MHz

74.25 MHz

Table 14. Ordering Codes for Supported Tape & Reel Packing Method

Device Size

16 mm T&R (3 ku)

16 mm T&R (1 ku)

12 mm T&R (3 ku)

12 mm T&R (1 ku)

8 mm T&R (3 ku)

8 mm T&R (1 ku)

(mm x mm)

2.0 x 1.6

2.5 x 2.0

3.2 x 2.5

5.0 x 3.2

7.0 x 5.0

–

T

–

Y

–

T

–

Y

–

D

–

E

–

Rev 1.07

Page 13 of 18

www.sitime.com

SiT1602B Low Power, Standard Frequency Oscillator

Table 15. Additional Information

Document

Time Machine II

Description

MEMS oscillator programmer

Download Link

http://www.sitime.com/support/time-machine-oscillator-programmer

http://www.sitime.com/products/field-programmable-oscillators

Field Programmable

Oscillators

Devices that can be programmable in the field by

Time Machine II

Manufacturing Notes

Qualification Reports

Performance Reports

Termination Techniques

Layout Techniques

Tape & Reel dimension, reflow profile and other

manufacturing related info

https://www.sitime.com/sites/default/files/gated/Manufacturing-Notes-

for-SiTime-Products.pdf

RoHS report, reliability reports,

composition reports

http://www.sitime.com/support/quality-and-reliability

http://www.sitime.com/support/performance-measurement-report

http://www.sitime.com/support/application-notes

Additional performance data such as phase noise,

current consumption and jitter for selected frequencies

Termination design

recommendations

Layout recommendations

http://www.sitime.com/support/application-notes

Table 16. Revision History

Revision

Release Date

Change Summary

0.9

1-Apr-2014

Preliminary

Removed preliminary

Updated max spec for current consumption and OE disable current

Updated the maximum operating junction temperature

Updated the current consumption and OE disable current in Table 12

Updated performance plots 8 and 10

1.0

14-May-2014

7-May-2015

Revised the formula for calculating the max frequency with different rise/fall time options

Added 20 MHz to the frequency selection

Revised the Electrical Characteristics, Timing Diagrams and Performance Plots

Revised 2016 PKG diagram

1.01

Added 16 mm T&R information to Table14

Revised 12 mm T&R information to Table14

1.02

1.03

1.04

18-Jun-2015

30-Aug-2016

9-Jan-2018

Revised part number example in the ordering information

Updated logo and company address, other page layout changes

Revised 2520 package land pattern

Updated ordering information with “YY” supply voltage option

Updated ordering information with note

1.05

1.06

1.07

8-Jul-2020

27-Jan-2021

10-Mar-2021

Removed Note 12

Added Rise/Fall Time, RMS Period Jitter, and RMS Phase Jitter specifications for “YY” supply voltage

Various formatting changes

Updated Dimensions and Patterns drawings

Updated hyperlinks, trademarks and changed rev table date format

SiTime Corporation, 5451 Patrick Henry Drive, Santa Clara, CA 95054, USA | Phone: +1-408-328-4400 | Fax: +1-408-328-4439

defect of a Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or

accident, (iii) unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv)

improper installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress.

Disclaimer: SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by

operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or

usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any SiTime product and any product documentation. Products sold by

SiTime are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved

or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below.

CRITICAL USE EXCLUSION POLICY

BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR

FACILITIES OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE.

SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products

does not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to

the sale of products or services by SiTime. Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be

strictly prohibited.

Rev 1.07

Page 14 of 18

www.sitime.com

Silicon MEMS Outperforms Quartz

Supplemental Information

The Supplemental Information section is not part of the datasheet and is for informational purposes only.

Rev 1.07

Page 15 of 18

www.sitime.com

Silicon MEMS Outperforms Quartz

Best Reliability

Best Electro Magnetic Susceptibility (EMS)

Silicon is inherently more reliable than quartz. Unlike quartz

suppliers, SiTime has in-house MEMS and analog CMOS

expertise, which allows SiTime to develop the most relia-

ble products. Figure 1 shows a comparison with quartz

technology.

SiTime’s oscillators in plastic packages are up to 54 times

more immune to external electromagnetic fields than quartz

oscillators as shown in Figure 3.

Why is SiTime Best in Class:

◼

Internal differential architecture for best common

mode noise rejection

Why is SiTime MEMS Best in Class:

◼

SiTime’s MEMS resonators are vacuum sealed using

an advanced EpiSeal™ process, which eliminates

foreign particles and improves long term aging and

reliability

◼

Electrostatically driven MEMS resonator is more im-

mune to EMS

◼

World-class MEMS and CMOS design expertise

Reliability (Million Hours)

SiTime

1,140

38

IDT

KYCA

EPSN

TXC

CW

SLAB

SiTime

28

EPSN

Figure 3. Electro Magnetic Susceptibility (EMS)^[3]

Best Power Supply Noise Rejection

Figure 1. Reliability Comparison^[1]

SiTime’s MEMS oscillators are more resilient against noise

on the power supply. A comparison is shown in Figure 4.

Best Aging

Why is SiTime Best in Class:

Unlike quartz, MEMS oscillators have excellent long

term aging performance which is why every new SiTime

product specifies 10-year aging. A comparison is shown

in Figure 2.

◼

On-chip regulators and internal differential architec-

ture for common mode noise rejection

◼

MEMS resonator is paired with advanced analog

CMOS IC

Why is SiTime Best in Class:

◼

SiTime’s MEMS resonators are vacuum sealed using

an advanced EpiSeal™ process, which eliminates

foreign particles and improves long term aging and

reliability

SiTime

EPSN

KYCA

◼

Inherently better immunity of electrostatically driven

MEMS resonator

MEMS vs. Quartz Aging

EpiSeal MEMS Oscillator

SiTime Oscillator

Quartz Oscillator

10

8

6

Figure 4. Power Supply Noise Rejection^[4]

4

3.5

3

2

1.5

0

1-Year

10-Year

Figure 2. Aging Comparison^[2]

Rev 1.07

Page 16 of 18

www.sitime.com

Silicon MEMS Outperforms Quartz

Best Vibration Robustness

Best Shock Robustness

High-vibration environments are all around us. All

electronics, from handheld devices to enterprise servers

and storage systems are subject to vibration. Figure 5

shows a comparison of vibration robustness.

SiTime’s oscillators can withstand at least 50,000 g shock.

They all maintain their electrical performance in operation

during shock events. A comparison with quartz devices is

shown in Figure 6.

Why is SiTime Best in Class:

◼

The moving mass of SiTime’s MEMS resonators is

◼

The moving mass of SiTime’s MEMS resonators is

up to 3000 times smaller than quartz

◼

Center-anchored MEMS resonator is the most robust

design

◼

Center-anchored MEMS resonator is the most robust

design

EP

EPS

S

KYC

KYCA

A

SLA

SLAB

B

T

X

C

W

SiTiSime

Ep eal MEMS

100.0

10.0

1.0

0.1

0.0

10

100

Vibration Frequency (Hz)

1000

KYCA

EPSN

TXC

CW

SLAB

SiTime

Figure 6. Shock Robustness^[6]

Figure 5. Vibration Robustness^[5]

Figure labels:

▪

TXC = TXC

Epson = EPSN

Connor Winfield = CW

Kyocera = KYCA

SiLabs = SLAB

SiTime = EpiSeal MEMS

Rev 1.07

Page 17 of 18

www.sitime.com

Silicon MEMS Outperforms Quartz

Notes:

1. Data source: Reliability documents of named companies.

2. Data source: SiTime and quartz oscillator devices datasheets.

3. Test conditions for Electro Magnetic Susceptibility (EMS):

▪

According to IEC EN61000-4.3 (Electromagnetic compatibility standard)

Field strength: 3V/m

Radiated signal modulation: AM 1 kHz at 80% depth

Carrier frequency scan: 80 MHz – 1 GHz in 1% steps

Antenna polarization: Vertical

DUT position: Center aligned to antenna

Devices used in this test:

Label

Manufacturer

SiTime

Part Number

Technology

EpiSeal MEMS

EPSN

SiT9120AC-1D2-33E156.250000

EG-2102CA156.2500M-PHPAL3

BB-156.250MBE-T

MEMS + PLL

Epson

Quartz, SAW

TXC

Quartz, 3^rdOvertone

Quartz, SAW

CW

Conner Winfield

AVX Kyocera

SiLab

P123-156.25M

KYCA

SLAB

KC7050T156.250P30E00

590AB-BDG

Quartz, 3^rdOvertone + PLL

4. 50 mV pk-pk Sinusoidal voltage.

Devices used in this test:

Label

Manufacturer

SiTime

Part Number

Technology

MEMS + PLL

Quartz

EpiSeal MEMS

NDK

SiT8208AI-33-33E-25.000000

NZ2523SB-25.6M

NDK

KYCA

AVX Kyocera

Epson

KC2016B25M0C1GE00

SG-310SCF-25M0-MB3

Quartz

EPSN

Quartz

5. Devices used in this test:

same as EMS test stated in Note 3.

6. Test conditions for shock test:

▪

MIL-STD-883F Method 2002

Condition A: half sine wave shock pulse, 500-g, 1ms

Continuous frequency measurement in 100 μs gate time for 10 seconds

Devices used in this test:

same as EMS test stated in Note 3.

7. Additional data, including setup and detailed results, is available upon request to qualified customer. Please contact productsupport@sitime.com.

Rev 1.07

Page 18 of 18

www.sitime.com


型号：	SIT1602BC-11-18E-24.000000D
厂家：	ETC
描述：	OSC MEMS 24.0000MHZ LVCMOS SMD
文件：	总18页 (文件大小：1393K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SIT1602BC-11-18E-24.000000D [ETC]

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SIT1602BC-11-18E-24.000000E

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SIT1602BC-11-18E-24.576000D

SIT1602BC-11-18E-24.576000E

SIT1602BC-11-18E-24.576000G

SIT1602BC-11-18E-25.000000D

SIT1602BC-11-18E-25.000000E

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