SIT8008BC-11-33E-48.000000D [ETC]
OSC MEMS 48.0000MHZ LVCMOS SMD;型号: | SIT8008BC-11-33E-48.000000D |
厂家: | ETC |
描述: | OSC MEMS 48.0000MHZ LVCMOS SMD |
文件: | 总18页 (文件大小:1305K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SiT8008B
Low Power Programmable Oscillator
Features
Applications
◼ Any frequency between 1 MHz and 110 MHz accurate to
6 decimal places
◼ Ideal for DSC, DVC, DVR, IP CAM, Tablets, e-Books,
SSD, GPON, EPON, etc
◼ 100% pin-to-pin drop-in replacement to quartz-based XO
◼ Excellent total frequency stability as low as ±20 ppm
◼ Operating temperature from -40°C to 85°C. For 125°C
and/or -55°C options, refer to SiT1618, SiT8918, SiT8920
◼ Low power consumption of 3.5 mA typical at 1.8 V
◼ Qualify just one device with 1.62 V to 3.63 V continuous
supply voltage option
◼ Ideal for high-speed serial protocols such as: USB,
SATA, SAS, Firewire, 100M / 1G / 10G Ethernet, etc.
◼ Standby mode for longer battery life
◼ Fast startup time of 5 ms
◼ LVCMOS/HCMOS compatible output
◼ Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5,
5.0 x 3.2, 7.0 x 5.0 mm x mm
◼ Instant samples with Time Machine II and Field
Programmable Oscillators
◼ RoHS and REACH compliant, Pb-free, Halogen-free and
Antimony-free
◼ For AEC-Q100 oscillators, refer to SiT8924 and SiT8925
Electrical Characteristics
All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise
stated. Typical values are at 25°C and nominal supply voltage.
Table 1. Electrical Characteristics
Parameters
Symbol
Min.
Typ.
Max.
Frequency Range
110 MHz
Frequency Stability and Aging
Unit
Condition
Output Frequency Range
f
1
–
Frequency Stability
F_stab
T_use
-20
-25
-50
–
–
–
+20
+25
+50
ppm
ppm
ppm
Inclusive of initial tolerance at 25°C, 1st year aging at 25°C, and
variations over operating temperature, rated power supply voltage
and load.
Operating Temperature Range
Operating Temperature
Range
-20
-40
–
–
+70
+85
°C
°C
Extended Commercial
Industrial
Supply Voltage and Current Consumption
Supply Voltage Options
Vdd_1.8
Vdd_2.5
Vdd_2.8
Vdd_3.0
Vdd_3.3
Vdd_XX
Vdd_YY
Idd
Contact SiTime for 1.5 V support
1.62
2.25
2.52
2.7
1.8
2.5
2.8
3.0
3.3
1.98
2.75
3.08
3.3
V
V
V
V
V
2.97
3.63
2.25
1.62
–
–
3.63
3.63
V
V
Current Consumption
–
3.8
4.5
mA
No load condition, f = 20 MHz, Vdd_2.8, Vdd_3.0, Vdd_3.3,
Vdd_XX, Vdd_YY
–
–
–
3.7
3.5
–
4.2
4.1
4.2
mA
mA
mA
No load condition, f = 20 MHz, Vdd_2.5
No load condition, f = 20 MHz, Vdd_1.8
OE Disable Current
Standby Current
I_OD
I_std
Vdd_2.5, Vdd_2.8, Vdd_3.0, Vdd_3.3, Vdd_XX, Vdd_YY.
OE = GND, Output in high-Z state
–
–
–
4.0
4.3
mA
Vdd_1.8. OE = GND, Output in high-Z state
2.1
A
ST = GND, Vdd_2.8, Vdd_3.0, Vdd_3.3, Vdd_XX, Vdd_YY.
Output is weakly pulled down
–
–
1.1
0.2
2.5
1.3
A
A
ST = GND, Vdd_2.5, Output is weakly pulled down
ST = GND, Vdd_1.8, Output is weakly pulled down
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SiT8008B Low Power Programmable Oscillator
Table 1. Electrical Characteristics (continued)
Parameters
Symbol
Min.
Typ.
Max.
Unit
Condition
LVCMOS Output Characteristics
Duty Cycle
DC
45
–
–
1
55
2
%
ns
ns
ns
All Vdds. See Duty Cycle definition in Figure 3 and Footnote 6
20% - 80% Vdd_2.5, Vdd_2.8, Vdd_3.0, Vdd_3.3
20% - 80% Vdd_1.8
Rise/Fall Time
Tr, Tf
–
1.3
–
2.5
2
–
20% - 80% Vdd_XX
–
–
–
2.7
ns
20% - 80% Vdd_YY
IOH = -4 mA (Vdd_3.0 and Vdd_3.3)
IOH = -3 mA (Vdd_2.8 and Vdd_ 2.5)
IOH = -2 mA (Vdd _1.8)
Output High Voltage
Output Low Voltage
VOH
VOL
90%
–
Vdd
–
–
10%
Vdd
IOL = 4 mA (Vdd_3.0 and Vdd_3.3)
IOL = 3 mA (Vdd_2.8 and Vdd_2.5)
IOL = 2 mA (Vdd_1.8)
Input Characteristics
Input High Voltage
Input Low Voltage
VIH
VIL
70%
–
–
–
–
30%
150
–
Vdd
Vdd
k
Pin 1, OE or ST
Pin 1, OE or ST
Input Pull-up Impedance
Z_in
50
2
87
–
Pin 1, OE logic high or logic low, or ST logic high
Pin 1, ST logic low
M
Startup and Resume Timing
Startup Time
T_start
T_oe
–
–
–
–
–
–
5
130
5
ms
ns
Measured from the time Vdd reaches its rated minimum value
f = 110 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles
Measured from the time ST pin crosses 50% threshold
Enable/Disable Time
Resume Time
T_resume
ms
Jitter
RMS Period Jitter
T_jitt
–
1.8
3
ps
f = 75 MHz, Vdd_1.8, Vdd_2.5, Vdd_2.8, Vdd_3.0, Vdd_3.3,
Vdd_XX,
–
–
–
–
–
3.3
25
ps
ps
ps
ps
f = 75 MHz, Vdd_YY
Peak-to-peak Period Jitter
RMS Phase Jitter (random)
T_pk
12
14
0.5
f = 75 MHz, Vdd_2.5, Vdd_2.8, Vdd_3.0, Vdd_3.3, Vdd_XX, Vdd_YY
f = 75 MHz, Vdd_1.8
30
T_phj
0.9
f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz. Vdd_1.8,
Vdd_2.5, Vdd_2.8, Vdd_3.0, Vdd_3.3, Vdd_XX
–
1.3
2
ps
f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz. Vdd_1.8,
Vdd_2.5, Vdd_2.8, Vdd_3.0, Vdd_3.3, Vdd_XX
–
–
–
–
1.4
2.3
ps
ps
f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz. Vdd_YY
f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz. Vdd_YY
Table 2. Pin Description
Top View
Pin
Symbol
Functionality
H[1]: specified frequency output
L: output is high impedance. Only output driver is disabled.
H[1]: specified frequency output
Output Enable
OE/S̅ T̅̅ /NC
1
OE/S̅ T̅̅ /NC
L: output is low (weak pull down). Device goes to sleep mode.
Supply current reduces to I_std.
Standby
Any voltage between 0 and Vdd or Open[1]: Specified frequency
output. Pin 1 has no function.
No Connect
2
3
4
GND
OUT
VDD
Power
Output
Power
Electrical ground
Oscillator output
Figure 1. Pin Assignments
Power supply voltage[2]
Notes:
1. In OE or S̅ T̅̅ mode, a pull-up resistor of 10 kΩ or less is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option.
2. A capacitor of value 0.1 µF or higher between Vdd and GND is required.
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SiT8008B Low Power Programmable Oscillator
Table 3. Absolute Maximum Limits
Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance
of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter
Min.
-65
-0.5
–
Max.
150
4
Unit
°C
V
StorageTemperature
Vdd
2000
260
150
V
ElectrostaticDischarge
–
°C
°C
Soldering Temperature (follow standard Pb free soldering guidelines)
JunctionTemperature[3]
–
Note:
3. Exceeding this temperature for extended period of time may damage the device.
Table 4. Thermal Consideration[4]
JA, 4 Layer Board
JA, 2 Layer Board
JC, Bottom
Package
(°C/W)
(°C/W)
(°C/W)
30
7050
5032
3225
2520
2016
142
97
273
199
212
222
252
24
109
117
152
27
26
36
Note:
4. Refer to JESD51 for JA and JC definitions, and reference layout used to determine the JA and JC values in the above table.
Table 5. Maximum Operating JunctionTemperature[5]
Max Operating Temperature(ambient)
Maximum Operating JunctionTemperature
70°C
85°C
80°C
95°C
Note:
5. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature.
Table 6. Environmental Compliance
Parameter
Condition/TestMethod
Mechanical Shock
Mechanical Vibration
TemperatureCycle
Solderability
MIL-STD-883F, Method2002
MIL-STD-883F, Method 2007
JESD22, Method A104
MIL-STD-883F, Method2003
MSL1 @ 260°C
Moisture Sensitivity Level
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SiT8008B Low Power Programmable Oscillator
Test Circuit and Waveform[6]
Vdd
Vout
Test Point
tr
tf
4
3
80% Vdd
50%
Power
Supply
0.1 uF
15pF
2
(including probe
and fixture
capacitance)
1
20% Vdd
High Pulse
(TH)
Low Pulse
(TL)
Vdd
OE/ST Function
Period
1 kΩ
Figure 2. Waveform
Figure 1. Test Circuit
Note:
6. Duty Cycle is computed as Duty Cycle =TH/Period.
Timing Diagrams
Vdd
Vdd
90% Vdd
50% Vdd
[7]
T_resume
T_start
No Glitch
Pin 4 Voltage
ST Voltage
during start up
CLK Output
CLK Output
HZ
HZ
T_start: Time to start from power-off
T_resume: Time to resume from ST
Figure 3. Startup Timing (OE/ S̅ T̅ ̅ Mode)
Figure 4. Standby Resume Timing ( S
̅
T
̅
̅
ModeOnly)
Vdd
T_oe
Vdd
50% Vdd
OE Voltage
OE Voltage
CLK Output
50% Vdd
T_oe
CLK Output
HZ
HZ
T_oe: Time to re-enable the clock output
T_oe: Time to put the output in High Z mode
Figure 5. OE Enable Timing (OE Mode Only)
Figure 6. OE Disable Timing (OE Mode Only)
Note:
7. SiT8008 has “no runt” pulses and “no glitch” output during startup or resume.
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SiT8008B Low Power Programmable Oscillator
Performance Plots[8]
DUT1
DUT6
DUT2
DUT7
DUT3
DUT8
DUT4
DUT9
DUT5
1.8
2.5
2.8
3.0
3.3
DUT10
6.0
5.5
5.0
4.5
4.0
3.5
3.0
20
15
10
5
0
-5
-10
-15
-20
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
80
90
100
110
Temperature (°C)
Frequency (MHz)
Figure 7. Idd vs Frequency
Figure 8. Frequency vsTemperature
1.8 V
2.5 V
2.8 V
3.0 V
3.3 V
55
54
53
52
51
50
49
48
47
46
45
0
10
20
30
40
50
60
70
80
90
100
110
Frequency (MHz)
Frequency (MHz)
Figure 9. RMS Period Jitter vs Frequency
Figure 10. Duty Cycle vs Frequency
Temperature (°C)
Temperature (°C)
Figure 11. 20%-80% Rise Timevs Temperature
Figure 12. 20%-80% Fall Time vsTemperature
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SiT8008B Low Power Programmable Oscillator
Performance Plots[8]
1.8 V
2.5 V
2.8 V
3.0 V
3.3 V
0.9
0.8
0.7
0.6
0.5
0.4
10
30
50
70
90
110
10
30
50
70
90
110
Frequency (MHz)
Frequency (MHz)
Figure 14. RMS Integrated Phase Jitter Random
(900 kHz to 20 MHz) vs Frequency[9]
Figure 13. RMS Integrated Phase JitterRandom
(12 kHz to 20 MHz) vs Frequency[9]
Notes:
8. All plots are measured with 15 pF load at room temperature, unless otherwise stated.
9. Phase noise plots are measured with Agilent E5052B signal source analyzer. Integration range is up to 5 MHz for carrier frequencies below 40 MHz.
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SiT8008B Low Power Programmable Oscillator
The SiT8008 can support up to 60 pF or higher in
maximum capacitive loads with drive strength settings.
Refer to the Rise/Fall Time Tables (Table 7 to 11) to
determine the proper drive strength for the desired
combination of output load vs. rise/fall time.
Programmable Drive Strength
The SiT8008 includes a programmable drive strength
feature to provide a simple, flexible tool to optimize the
clock rise/fall time for specific applications. Benefits from
the programmable drive strength feature are:
SiT8008 Drive Strength Selection
◼
◼
◼
Improves system radiated electromagnetic interference
(EMI) by slowing down the clock rise/fall time.
Improves the downstream clock receiver’s (RX) jitter by
decreasing (speeding up) the clock rise/fall time.
Ability to drive large capacitive loads while maintaining
full swing with sharp edge rates.
Tables 7 through 11 define the rise/fall time for a given
capacitive load and supply voltage.
1. Select the table that matches the SiT8008 nominal
supply voltage (1.8 V, 2.5 V, 2.8 V, 3.0 V, 3.3 V)
2. Select the capacitive load column that matches the
For more detailed information about rise/fall time control and
drive strength selection, see the SiTime Application Notes
section.
application requirement (5 pF to 60 pF)
3. Under the capacitive load column, select the
desired rise/fall times.
EMI Reduction by Slowing Rise/Fall Time
4. The left-most column represents the part number
Figure 15 shows the harmonic power reduction as the
rise/fall times are increased (slowed down). The rise/fall
times are expressed as a ratio of the clock period. For the
ratio of 0.05, the signal is very close to a square wave. For
the ratio of 0.45, the rise/fall times are very close to near-
triangular waveform. These results, for example, show that
the 11th clock harmonic can be reduced by 35 dB if the
rise/fall edge is increased from 5% of the period to 45% of
the period.
code for the corresponding drive strength.
5. Add the drive strength code to the part number for
ordering purposes.
Calculating Maximum Frequency
Any given rise/fall time in Table 7 through 11 dictates the
maximum frequency under which the oscillator can operate
with guaranteed full output swing over the entire operating
temperature range. This max frequency can be calculated as
the following:
trise=0.05
trise=0.1
10
0
trise=0.15
trise=0.2
trise=0.25
trise=0.3
trise=0.35
trise=0.4
trise=0.45
1
-10
-20
-30
-40
-50
-60
-70
-80
Max Frequency =
5 x Trf_20/80
where Trf_20/80 is the typical value for 20%-80% rise/fall time.
Example 1
Calculate fMAX for the following condition:
◼
◼
◼
Vdd = 1.8 V (Table 7)
Capacitive Load: 30 pF
1
3
5
7
9
11
Harmonic number
Figure 15. Harmonic EMI reduction as a Function
of Slower Rise/Fall Time
Desired Tr/f time = 3 ns
(rise/fall time part number code = E)
◼
fMAX = 66.666660
Jitter Reduction with Faster Rise/Fall Time
Part number for the above example:
Power supply noise can be a source of jitter for the
downstream chipset. One way to reduce this jitter is to
speed up the rise/fall time of the input clock. Some chipsets
may also require faster rise/fall time in order to reduce their
sensitivity to this type of jitter. Refer to the Rise/Fall Time
Tables (Table 7 to Table 11) to determine the proper drive
strength.
SiT8008BIE12-18E-66.666660
Drive strength code is inserted here. Default setting is “-”.
High Output Load Capability
The rise/fall time of the input clock varies as a function of
the actual capacitive load the clock drives. At any given
drive strength, the rise/fall time becomes slower as the
output load increases. As an example, for a 3.3 V SiT8008
device with default drive strength setting, the typical rise/fall
time is 1 ns for 15 pF output load. The typical rise/fall time slows
down to 2.6 ns when the output load increases to 45 pF. One
can choose to speed up the rise/fall time to 1.83 ns by then
increasing the drive strength setting on the SiT8008.
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SiT8008B Low Power Programmable Oscillator
Rise/Fall Time (20% to 80%) vs CLOAD Tables
Table 7. Vdd = 1.8 V (Vdd_1.8) Rise/Fall Times
for Specific CLOAD
Table 8. Vdd = 2.5 V (Vdd_2.5) Rise/Fall Times
for Specific CLOAD
Rise/Fall Time Typ (ns)
Rise/Fall Time Typ (ns)
Drive Strength \CLOAD
5 pF
15 pF
30 pF
45 pF
60 pF
Drive Strength \CLOAD
5 pF
15 pF
30 pF
45 pF
60 pF
L
A
R
B
L
A
R
B
T
E
U
6.16
3.19
2.11
1.65
0.93
0.78
0.70
0.65
11.61
6.35
4.31
3.23
1.91
1.66
1.48
1.30
22.00
11.00
7.65
5.79
3.32
2.94
2.64
2.40
31.27
16.01
10.77
8.18
4.66
4.09
39.91
21.52
14.47
11.08
6.48
4.13
2.11
1.45
1.09
0.62
8.25
4.27
2.81
2.20
1.28
12.82
7.64
5.16
3.88
2.27
21.45
11.20
7.65
5.86
3.51
27.79
14.49
9.88
7.57
4.45
T
5.74
5.09
E or "‐": default
0.54
0.43
0.34
1.00
0.96
0.88
2.01
1.81
1.64
3.10
2.79
2.54
4.01
3.65
3.32
3.68
U
F
F or "‐": default
3.35
4.56
Table 10. Vdd = 3.0 V (Vdd_3.0) Rise/Fall Times
for Specific CLOAD
Table 9. Vdd = 2.8 V (Vdd_2.8) Rise/Fall Times
for Specific CLOAD
Rise/Fall Time Typ (ns)
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD
5 pF
3.60
1.84
1.22
0.89
0.51
0.38
0.30
0.27
15 pF
7.21
3.71
2.46
1.92
1.00
0.92
0.83
0.76
30 pF
11.97
6.72
4.54
3.39
1.97
1.72
1.55
1.39
45 pF
18.74
9.86
6.76
5.20
3.07
2.71
2.40
2.16
60 pF
24.30
12.68
8.62
6.64
3.90
3.51
3.13
2.85
Drive Strength \ CLOAD
5 pF
3.77
1.94
1.29
0.97
0.55
15 pF
7.54
3.90
2.57
2.00
1.12
30 pF
12.28
7.03
4.72
3.54
2.08
45 pF
19.57
10.24
7.01
5.43
3.22
60 pF
25.27
13.34
9.06
6.93
4.08
L
A
R
B
L
A
R
B
T
T or "‐": default
E
U
F
E or "‐": default
0.44
0.34
0.29
1.00
0.88
0.81
1.83
1.64
1.48
2.82
2.52
2.29
3.67
3.30
2.99
U
F
Table 11. Vdd = 3.3 V (Vdd_3.3) Rise/Fall Times
for Specific CLOAD
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD
5 pF
3.39
1.74
1.16
0.81
15 pF
6.88
3.50
2.33
1.82
30 pF
11.63
6.38
4.29
3.22
45 pF
17.56
8.98
6.04
4.52
60 pF
23.59
12.19
8.34
L
A
R
B
6.33
T or “‐”: default
0.46
0.33
0.28
0.25
1.00
0.87
0.79
0.72
1.86
1.64
1.46
1.31
2.60
2.30
2.05
1.83
3.84
3.35
2.93
2.61
E
U
F
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SiT8008B Low Power Programmable Oscillator
Pin 1 Configuration Options
(OE, S̅ T̅ ̅ , or NC)
Pin 1 of the SiT8008 can be factory-programmed to support
three modes: Output Enable (OE), standby (S ) or
̅ T̅ ̅
No Connect (NC). These modes can also be programmed
with the Time Machine using field programmable devices.
Output Enable (OE) Mode
In the OE mode, applying logic Low to the OE pin only
disables the output driver and puts it in Hi-Z mode. The core
of the device continues to operate normally. Power
consumption is reduced due to the inactivity of the output.
When the OE pin is pulled High, the output is typically
enabled in <1 µs.
Figure 16. Startup Waveform vs. Vdd
Standby (S̅ T̅ ̅ ) Mode
In the S mode, a device enters into the standby mode when
̅ T̅ ̅
Pin 1 pulled Low. All internal circuits of the device are turned
off. The current is reduced to a standby current, typically in
the range of a few µA. When S̅ T̅ ̅ is pulled High, the device
goes through the “resume” process, which can take up
to 5 ms.
No Connect (NC) Mode
In the NC mode, the device always operates in its normal
mode and outputs the specified frequency regardless of the
logic level on pin 1.
Figure 17. Startup Waveform vs. Vdd
(Zoomed-in View of Figure 16)
Instant Samples with Time Machine and
Field Programmable Oscillators
Table 12 below summarizes the key relevant parameters in
the operation of the device in OE, S
̅
T
̅
̅
, or NCmode.
SiTime supports a field programmable version of the
SiT8008 Low Power Oscillator for fast prototyping and real
time customization of features. The field programmable
devices (FP devices) are available for all five standard
SiT8008 package sizes and can be configured to one’s
exact specification using the Time Machine II, an USB
powered MEMS oscillator programmer.
Table 12. OE vs. S vs. NC
̅ T̅ ̅
OE
ST
NC
Active current 20 MHz
(max, 1.8 V)
4.1 mA
4 mA
N/A
4.1 mA
4.1 mA
OE disable current
(max. 1.8 V)
N/A
0.6 µA
N/A
N/A
N/A
N/A
Standby current
(typical 1.8 V)
OE enable time at 77.76 MHz
(max)
138 ns
Customizable Features of the SiT8008 FP Devices Include
Resume time from standby
(max, all frequency)
N/A
5 ms
N/A
N/A
◼
◼
Frequency between 1 MHz to 110 MHz
Three frequency stability options, ±20 ppm,
±25 ppm, ±50 ppm
Output driver in OE
disable/standby mode
High Z
weak
pull-down
◼
◼
Two operating temperatures, -20 to 70°C or
-40 to 85°C
Output on Startup and Resume
The SiT8008 comes with gated output. Its clock output is
accurate to the rated frequency stability within the first pulse
from initial device startup or resume from the standby mode.
Seven supply voltage options, 1.8 V, 2.5 V, 2.8 V,
3.0 V, 3.3 V, 2.25 to 3.63 V and 1.62 to 3.63 V
continuous
In addition, the SiT8008 features “no runt” pulses and “no
glitch” output during startup or resume as shown in the wave-
form captures in Figure 17 and Figure 18.
◼
◼
Output drive strength
OE, ST or NC mode
For more information regarding
SiTime’s field
programmable solutions, see Time Machine II and Field
Programmable Oscillators.
SiT8008 is typically factory-programmed per customer
ordering codes for volume delivery.
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SiT8008B Low Power Programmable Oscillator
Dimensions and Patterns
Package Size – Dimensions (Unit: mm)[10]
2.0 x 1.6 x 0.75 mm
Recommended Land Pattern (Unit: mm)[11]
1.5
0.9
2.5 x 2.0 x 0.75 mm
1.9
1.1
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SiT8008B Low Power Programmable Oscillator
Dimensions and Patterns (continued)
Package Size – Dimensions (Unit: mm)[10]
3.2 x 2.5 x 0.75 mm
Recommended Land Pattern (Unit: mm)[11]
2.2
1.4
5.0 x 3.2 x 0.75 mm
2.54
1.5
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SiT8008B Low Power Programmable Oscillator
Dimensions and Patterns (continued)
Package Size – Dimensions (Unit: mm)[10]
7.0 x 5.0 x 0.90 mm
Recommended Land Pattern (Unit: mm)[11]
5.08
2.2
Notes:
10. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of
the device.
11. A capacitor of value 0.1 µF or higher between Vdd and GND is required.
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SiT8008B Low Power Programmable Oscillator
Ordering Information
The Part No. Guide is for reference only.
To customize and build an exact part number, use the SiTime Part Number Generator.
SiT8008BC-12-18E-66.666660D
Packing Method
D”: 8 mm Tape & Reel, 3 kureel
“E”: 8 mm Tape & Reel, 1 ku reel
“T”: 12/16 mm Tape & Reel, 3 ku reel
“Y”: 12/16 mm Tape & Reel, 1 ku reel
Blank for Bulk
Revision Letter
Temperature Range
C” Commercial, -20°C to 70°C
“I” Industrial, -40°C to 85°C
See Tables 7 to 11 for
rise/fall times
Supply Voltage
Package Size
Frequency Stability
Table 13. Ordering Codes for Supported Tape & Reel Packing Method
Device Size
16 mm T&R (3 ku)
16 mm T&R (1 ku)
12 mm T&R (3 ku)
12 mm T&R (1 ku)
8 mm T&R (3 ku)
8 mm T&R (1 ku)
(mm x mm)
2.0 x 1.6
2.5 x 2.0
3.2 x 2.5
5.0 x 3.2
7.0 x 5.0
–
–
–
–
T
–
–
–
–
Y
–
–
–
T
–
–
–
–
Y
–
D
D
D
–
E
E
E
–
–
–
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SiT8008B Low Power Programmable Oscillator
Table 14. Additional Information
Document
Description
Download Link
Time Machine II
MEMS oscillator programmer
http://www.sitime.com/support/time-machine-oscillator-programmer
Field Programmable
Oscillators
Devices that can be programmable in the http://www.sitime.com/products/field-programmable-oscillators
field by Time Machine II
Manufacturing Notes
Qualification Reports
Performance Reports
Tape & Reel dimension, reflow profile and https://www.sitime.com/sites/default/files/gated/Manufacturing-Notes-for-SiTime-
other manufacturing related info
Products.pdf
RoHS report, reliability reports,
composition reports
http://www.sitime.com/support/quality-and-reliability
Additional performance data such as
phase noise, current consumption and
jitter for selected frequencies
http://www.sitime.com/support/performance-measurement-report
Termination Techniques
Layout Techniques
Termination design
recommendations
http://www.sitime.com/support/application-notes
http://www.sitime.com/support/application-notes
Layout recommendations
Table 15. Revision History
Revision
Release Date
Change Summary
1.0
10-Jun-2014
First Production Release
1.01
7-May-2015
Revised the Electrical Characteristics, Timing Diagrams and Performance Plots
Revised 2016 package diagram
1.02
18-Jun-2015
Added 16 mm T&R information to Table 13
Revised 12 mm T&R information to Table 13
1.03
1.04
30-Aug-2016
9-Jan-2018
Revised part number example in the ordering information
Updated logo and company address, other page layout changes
Revised 2520 package land pattern
1.05
1.06
8-Jul-2020
Updated ordering information with “YY” supply voltage option
Updated ordering information with note
Removed note 12
27-Jan-2021
Added Rise/Fall Time, RMS Period Jitter, and RMS Phase Jitter specifications for “YY” voltage option
Various formatting updates
1.07
3-Nov-2021
Updated Dimensions and Patterns drawings
Fixed Condition of Output Low Voltage in Table 1
SiTime Corporation, 5451 Patrick Henry Drive, Santa Clara, CA 95054, USA | Phone: +1-408-328-4400 | Fax: +1-408-328-4439
© SiTime Corporation 2014-2021. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage or
defect of a Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or
accident, (iii) unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv)
improper installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress.
Disclaimer: SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by
operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or
usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any SiTime product and any product documentation. Products sold by
SiTime are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved
or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below.
CRITICAL USE EXCLUSION POLICY
BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR
FACILITIES OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE.
SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products
does not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to
the sale of products or services by SiTime. Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be
strictly prohibited.
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Silicon MEMS Outperforms Quartz
Supplemental Information
The Supplemental Information section is not part of the datasheet and is for informational purposes only.
1.07
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Silicon MEMS Outperforms Quartz
Best Reliability
Best Electro Magnetic Susceptibility (EMS)
Silicon is inherently more reliable than quartz. Unlike quartz
suppliers, SiTime has in-house MEMS and analog CMOS
expertise, which allows SiTime to develop the most
reliable products. Figure 1 shows a comparison with
quartz technology.
SiTime’s oscillators in plastic packages are up to 54 times
more immune to external electromagnetic fields than
quartz oscillators as shown in Figure 3.
Why is SiTime Best in Class:
◼ Internal differential architecture for best common
Why is SiTime Best in Class:
mode noise rejection
◼ SiTime’s MEMS resonators are vacuum sealed using an
advanced EpiSeal™ process, which eliminates foreign
particles and improves long term aging and reliability
◼ Electrostatically driven MEMS resonator is more
immune to EMS
◼ World-class MEMS and CMOS design expertise
Reliability (Million Hours)
SiTime
1,140
38
IDT
KYCA
EPSN
TXC
CW
SLAB
SiTime
28
EPSN
Figure 3. Electro Magnetic Susceptibility (EMS)[3]
Best Power Supply Noise Rejection
Figure 1. Reliability Comparison[1]
SiTime’s MEMS oscillators are more resilient against noise
on the power supply. A comparison is shown in Figure 4.
Best Aging
Unlike quartz, MEMS oscillators have excellent long term
aging performance which is why every new SiTime product
specifies 10-year aging. A comparison is shown in Figure 2.
Why is SiTime Best in Class:
◼ On-chip regulators and internal differential architecture
for common mode noise rejection
Why is SiTime Best in Class:
◼ MEMS resonator is paired with advanced analog
◼ SiTime’s MEMS resonators are vacuum sealed using an
advanced EpiSeal™ process, which eliminates foreign
particles and improves long term aging and reliability
CMOS IC
SiTime
EPSN
KYCA
◼ Inherently better immunity of electrostatically driven
MEMS resonator
MEMS vs. Quartz Aging
EpiSeal MEMS Oscillator
SiTime Oscillator
Quartz Oscillator
Quartz Oscillator
10
8
8
6
4
3.5
3
2
1.5
Figure 4. Power Supply Noise Rejection[4]
0
1-Year
10-Year
Figure 2. Aging Comparison[2]
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Silicon MEMS Outperforms Quartz
Best Vibration Robustness
Best Shock Robustness
High-vibration environments are all around us. All electronics,
from handheld devices to enterprise servers and storage
systems are subject to vibration. Figure 5 shows a com-
parison of vibration robustness.
SiTime’s oscillators can withstand at least 50,000 g shock.
They all maintain their electrical performance in operation
during shock events. A comparison with quartz devices is
shown in Figure 6.
Why is SiTime Best in Class:
Why is SiTime Best in Class:
◼ The moving mass of SiTime’s MEMS resonators is up
◼ The moving mass of SiTime’s MEMS resonators is up
to 3000 times smaller than quartz
to 3000 times smaller than quartz
◼ Center-anchored MEMS resonator is the most robust
◼ Center-anchored MEMS resonator is the most robust
design
design
K
KYCA
T
TX
C
E
E
PS
C
S
S
L
AB
SiTime
E
100.0
10.0
1.0
0.1
0.0
10
100
1000
KYCA
EPSN
TXC
CW
SLAB
SiTime
Vibration Frequency (Hz)
Figure 6. Shock Robustness[6]
Figure 5. Vibration Robustness[5]
Figure labels:
▪
▪
▪
▪
▪
▪
TXC = TXC
Epson = EPSN
Connor Winfield = CW
Kyocera = KYCA
SiLabs = SLAB
SiTime = EpiSeal MEMS
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Silicon MEMS Outperforms Quartz
Notes:
1. Data source: Reliability documents of named companies.
2. Data source: SiTime and quartz oscillator devices datasheets.
3. Test conditions for Electro Magnetic Susceptibility (EMS):
▪
▪
▪
▪
▪
▪
According to IEC EN61000-4.3 (Electromagnetic compatibility standard)
Field strength: 3V/m
Radiated signal modulation: AM 1 kHz at 80% depth
Carrier frequency scan: 80 MHz – 1 GHz in 1% steps
Antenna polarization: Vertical
DUT position: Center aligned to antenna
Devices used in this test:
Label
Manufacturer
SiTime
Part Number
Technology
EpiSeal MEMS
EPSN
TXC
SiT9120AC-1D2-33E156.250000
EG-2102CA156.2500M-PHPAL3
BB-156.250MBE-T
MEMS + PLL
Epson
Quartz, SAW
TXC
Quartz, 3rd Overtone
Quartz, 3rd Overtone
Quartz, SAW
CW
Conner Winfield
AVX Kyocera
SiLab
P123-156.25M
KYCA
KC7050T156.250P30E00
590AB-BDG
SLAB
Quartz, 3rd Overtone + PLL
4. 50 mV pk-pk Sinusoidal voltage.
Devices used in this test:
Label
Manufacturer
SiTime
Part Number
Technology
MEMS + PLL
Quartz
EpiSeal MEMS
SiT8208AI-33-33E-25.000000
NZ2523SB-25.6M
NDK
NDK
KYCA
AVX Kyocera
Epson
KC2016B25M0C1GE00
SG-310SCF-25M0-MB3
Quartz
EPSN
Quartz
5. Devices used in this test:
same as EMS test stated in Note 3.
6. Test conditions for shock test:
▪
▪
▪
MIL-STD-883F Method 2002
Condition A: half sine wave shock pulse, 500-g, 1ms
Continuous frequency measurement in 100 μs gate time for 10 seconds
Devices used in this test:
same as EMS test stated in Note 3.
7. Additional data, including setup and detailed results, is available upon request to qualified customer. Please contact productsupport@sitime.com.
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相关型号:
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