SIT8208AC-21-18E-19.440000T [ETC]
-20 TO 70C, 3225, 20PPM, 1.8V, 1;
| 型号： | SIT8208AC-21-18E-19.440000T |
| 厂家： | 
ETC |
| 描述： | -20 TO 70C, 3225, 20PPM, 1.8V, 1 |
| 文件： | 总15页 (文件大小：749K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SiT8208
Ultra Performance Oscillator
The Smart Timing Choice
Features
Applications
Any frequency between 1 and 80 MHz accurate to 6 decimal places
100% pin-to-pin drop-in replacement to quartz-based oscillators
Ultra low phase jitter: 0.5 ps (12 kHz to 20 MHz)
Frequency stability as low as ±10 PPM
SATA, SAS, Ethernet, PCI Express, video, WiFi
Computing, storage, networking, telecom, industrial control
Industrial or extended commercial temperature range
LVCMOS/LVTTL compatible output
Standard 4-pin packages: 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2,
7.0 x 5.0 mm x mm
Instant samples with Time Machine II and field programmable
oscillators
Outstanding silicon reliability of 2 FIT or 500 million hour MTBF
Pb-free, RoHS and REACH compliant
Ultra short lead time
[1]
Electrical Characteristics
Parameter
Output Frequency Range
Frequency Stability
Symbol
Min.
Typ.
Max.
Frequency Range
80 MHz
Unit
Condition
f
1
–
Frequency Stability and Aging
F_stab
-10
-20
-25
-50
-1.5
-5
–
–
–
–
–
–
+10
+20
+25
+50
+1.5
+5
PPM
PPM
PPM
PPM
PPM
PPM
Inclusive of Initial tolerance at 25 °C, and variations over
operating temperature, rated power supply voltage and load
First year Aging
10-year Aging
F_aging
T_use
Vdd
25°C
25°C
Operating Temperature Range
Operating Temperature Range
Supply Voltage
-20
-40
–
–
+70
+85
°C
°C
Extended Commercial
Industrial
Supply Voltage and Current Consumption
1.71
2.25
2.52
2.97
–
1.8
2.5
2.8
3.3
31
29
–
1.89
2.75
3.08
3.63
33
V
V
Supply voltages between 2.5V and 3.3V can be supported.
Contact SiTime for additional information.
V
V
Current Consumption
OE Disable Current
Idd
mA
mA
mA
No load condition, f = 20 MHz, Vdd = 2.5V, 2.8V or 3.3V
No load condition, f = 20 MHz, Vdd = 1.8V
–
31
I_OD
–
31
Vdd = 2.5V, 2.8V or 3.3V, OE = GND, output is Weakly Pulled
Down
–
–
–
–
30
70
mA
Vdd = 1.8 V. OE = GND, output is Weakly Pulled Down
Standby Current
I_std
A
Vdd = 2.5V, 2.8V or 3.3V, ST = GND, output is Weakly Pulled
Down
–
–
10
A
Vdd = 1.8 V. ST = GND, output is Weakly Pulled Down
LVCMOS Output Characteristics
Duty Cycle
DC
45
–
–
1.2
–
55
2
%
Rise/Fall Time
Tr, Tf
VOH
VOL
ns
15 pF load, 10% - 90% Vdd
Output Voltage High
Output Voltage Low
90%
–
–
Vdd
Vdd
IOH = -6 mA, IOL = 6 mA, (Vdd = 3.3V, 2.8V, 2.5V)
IOH = -3 mA, IOL = 3 mA, (Vdd = 1.8V)
–
10%
Input Characteristics
Input Voltage High
VIH
VIL
70%
–
–
–
30%
250
–
Vdd
Pin 1, OE or ST
Input Voltage Low
–
–
2
Vdd
kΩ
Pin 1, OE or ST
Input Pull-up Impedance
Z_in
100
–
Pin 1, OE logic high or logic low, or ST logic high
Pin 1, ST logic low
MΩ
Note:
1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated.
SiTime Corporation
Rev. 1.02
990 Almanor Avenue
Sunnyvale, CA 94085
(408) 328-4400
www.sitime.com
Revised June 24, 2013
SiT8208
Ultra Performance Oscillator
The Smart Timing Choice
[1]
Electrical Characteristics (Continued)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Startup and Resume Timing
Startup Time
T_start
T_oe
–
–
–
7
–
6
10
150
10
ms
ns
Measured from the time Vdd reaches its rated minimum value
f = 80 MHz, For other frequencies, T_oe = 100 ns + 3 cycles
OE Enable/Disable Time
Resume Time
T_resume
ms
In standby mode, measured from the time ST pin crosses 50%
threshold. Refer to Figure 5.
Jitter
RMS Period Jitter
T_jitt
–
–
–
1.5
2
2
3
1
ps
ps
ps
f = 75 MHz, Vdd = 1.8V
RMS Phase Jitter (random)
Note:
T_phj
0.5
f = 10 MHz, Integration bandwidth = 12 kHz to 20 MHz
1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated.
Pin Configuration
Pin
Symbol
Functionality
[2]
Top View
Output
Enable
H or Open : specified frequency output
L: output is high impedance. Only output driver is disabled.
[2]
1
OE/ ST
H or Open : specified frequency output
1
2
4
3
OE/ST
GND
VDD
OUT
Standby
L: output is low (weak pull down). Device goes to sleep mode. Supply
current reduces to I_std.
[3]
2
3
4
GND
OUT
VDD
Power
Output
Power
Electrical ground
Oscillator output
[3]
Power supply voltage
Notes:
2. A pull-up resistor of <10 kΩ between OE/ ST pin and Vdd is recommended in high noise environment.
3. A capacitor of value 0.1 µF between Vdd and GND is recommended.
Absolute Maximum
Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual perfor-
mance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter
Min.
-65
-0.5
–
Max.
150
4
Unit
°C
V
Storage Temperature
VDD
Electrostatic Discharge
2000
260
150
V
Soldering Temperature (follow standard Pb free soldering guidelines)
Junction Temperature
–
°C
°C
–
Thermal Consideration
JA, 4 Layer Board
JA, 2 Layer Board
JC, Bottom
Package
7050
(°C/W)
(°C/W)
263
(°C/W)
191
97
30
24
27
26
5032
199
3225
109
117
212
2520
222
Environmental Compliance
Parameter
Condition/Test Method
Mechanical Shock
MIL-STD-883F, Method 2002
MIL-STD-883F, Method 2007
JESD22, Method A104
MIL-STD-883F, Method 2003
MSL1 @ 260°C
Mechanical Vibration
Temperature Cycle
Solderability
Moisture Sensitivity Level
Rev. 1.02
Page 2 of 10
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SiT8208
Ultra Performance Oscillator
The Smart Timing Choice
Phase Noise Plot
-100
-110
Integrated random phase jitter (RMS, 12kHz-5MHz): 0.52ps
-120
-130
-140
-150
-160
-170
103
104
105
106
Frequency Offset (Hz)
Figure 1. Phase Noise, 10 MHz, 3.3V, LVCMOS Output
Test Circuit and Waveform
Vdd
Vout
Test
Point
tr
tf
4
3
2
90% Vdd
50%
Power
Supply
15pF
(including probe
and fixture
0.1µF
1
10% Vdd
High Pulse
(TH)
capacitance)
Low Pulse
(TL)
OE/ST Function
Period
Vdd
1k
Figure 3. Waveform
Figure 2. Test Circuit
Notes:
4. Duty Cycle is computed as Duty Cycle = TH/Period.
5. SiT8208 supports the configurable duty cycle feature. For custom duty cycle at any given frequency, contact SiTime.
Rev. 1.02
Page 3 of 10
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SiT8208
Ultra Performance Oscillator
The Smart Timing Choice
Timing Diagram
90% Vdd, 2.5/2,8/3.3V devices
Vdd
95% Vdd, 1.8V devices
Pin 4 Voltage
Vdd
ST Voltage
50% Vdd
NO Glitch first cycle
T_resume
T_start
CLK Output
CLK Output
T_start: Time to start from power-off
T_resume: Time to resume from ST
Figure 4. Startup Timing (OE/ST Mode)
Figure 5. Standby Resume Timing (ST Mode Only)
u
Vdd
Vdd
OE Voltage
OE Voltage
50% Vdd
T_OE
50% Vdd
CLK Output
CLK Output
T_OE
HZ
T_OE: Time to re-enable the clock output
T_OE: Time to put the output drive in High Z mode
Figure 6. OE Enable Timing (OE Mode Only)
Figure 7. OE Disable Timing (OE Mode Only)
Notes:
6. SiT8208 supports NO RUNT pulses and No glitches during startup or resume.
7. SiT8208 supports gated output which is accurate within rated frequency stability from the first cycle.
Rev. 1.02
Page 4 of 10
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SiT8208
Ultra Performance Oscillator
The Smart Timing Choice
Performance Plots
3.3V
2.5V
1.8V
3.3V
2.5V
1.8V
3.00
2.50
2.00
1.50
1.00
0.50
0.00
40.0
38.0
36.0
34.0
32.0
30.0
28.0
26.0
24.0
22.0
20.0
10
20
30
40
50
60
70
80
10
20
30
40
50
60
70
80
Frequency, MHz
Frequency, MHz
Figure 8. Idd vs Frequency
Figure 9. RMS Period Jitter vs Frequency
2.5V
3.3V
1.8V
3.3V
2.5V
1.8V
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
55.0
54.0
53.0
52.0
51.0
50.0
49.0
48.0
47.0
46.0
45.0
10
20
30
40
50
60
70
80
10
20
30
40
50
60
70
80
Frequency, MHz
Frequency, MHz
Figure 10. Duty Cycle vs Frequency
Figure 11. RMS Phase Jitter vs Frequency
1.8V
2.5V
3.3V
1.8V
2.5V
3.3V
2.0
1.5
1.0
0.5
0.0
35
33
31
29
27
25
-40
-20
0
20
40
60
80
-40
-20
0
20
Temperature, °C
40
60
80
Temperature, °C
Figure 12. Idd vs Temperature, 10 MHz Output
Figure 13. Rise Time vs Temperature, 75 MHz Output
Note:
8. All plots are measured with 15 pF load at room temperature, unless otherwise stated.
Rev. 1.02
Page 5 of 10
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SiT8208
Ultra Performance Oscillator
The Smart Timing Choice
choose to speed up the rise/fall time to 1.41ns by then
increasing the drive strength setting on the SiT8208.
Programmable Drive Strength
The SiT8208 includes a programmable drive strength feature
to provide a simple, flexible tool to optimize the clock rise/fall
time for specific applications. Benefits from the programmable
drive strength feature are:
The SiT8208 can support up to 60 pF or higher in maximum
capacitive loads with up to 3 additional drive strength settings.
Refer to the Rise/Tall Time Tables to determine the proper
drive strength for the desired combination of output load vs.
rise/fall time
• Improves system radiated electromagnetic interference
(EMI) by slowing down the clock rise/fall time
• Improves the downstream clock receiver’s (RX) jitter by de-
creasing (speeding up) the clock rise/fall time.
• Ability to drive large capacitive loads while maintaining full
swing with sharp edge rates.
SiT8208 Drive Strength Selection
Tables 1 through 5 define the rise/fall time for a given capac-
itive load and supply voltage.
For more detailed information about rise/fall time control and
drive strength selection, see the SiTime Applications Note
section; http://www.sitime.com/support/application-notes.
1. Select the table that matches the SiT8208 nominal supply
voltage (1.8V, 2.5V, 2.8V, 3.0V, 3.3V).
2. Select the capacitive load column that matches the appli-
cation requirement (5 pF to 60 pF)
EMI Reduction by Slowing Rise/Fall Time
3. Under the capacitive load column, select the desired
rise/fall times.
Figure 14 shows the harmonic power reduction as the rise/fall
times are increased (slowed down). The rise/fall times are
expressed as a ratio of the clock period. For the ratio of 0.05,
the signal is very close to a square wave. For the ratio of 0.45,
the rise/fall times are very close to near-triangular waveform.
These results, for example, show that the 11th clock harmonic
can be reduced by 35 dB if the rise/fall edge is increased from
5% of the period to 45% of the period.
4. The left-most column represents the part number code for
the corresponding drive strength.
5. Add the drive strength code to the part number for ordering
purposes.
Calculating Maximum Frequency
Based on the rise and fall time data given in Tables 1 through
4, the maximum frequency the oscillator can operate with
guaranteed full swing of the output voltage over temperature
as follows:
trise=0.05
trise=0.1
10
0
trise=0.15
trise=0.2
trise=0.25
trise=0.3
-10
-20
-30
-40
-50
-60
-70
-80
trise=0.35
trise=0.4
1
trise=0.45
Max Frequency =
6 x (Trise)
Example 1
Calculate fMAX for the following condition:
• Vdd = 1.8V (Table 1)
• Capacitive Load: 30 pF
1
3
5
7
9
11
Harmonic number
• Desired Tr/f time = 3 ns (rise/fall time part number code = G)
Figure 14. Harmonic EMI reduction as a Function of
Slower Rise/Fall Time
Part number for the above example:
SiT8208AIGG2-18E-55.500000
Jitter Reduction with Faster Rise/Fall Time
Power supply noise can be a source of jitter for the
downstream chipset. One way to reduce this jitter is to
increase rise/fall time (edge rate) of the input clock. Some
chipsets would require faster rise/fall time in order to reduce
their sensitivity to this type of jitter. The SiT8208SiT8208
provides up to 3 additional high drive strength settings for very
fast rise/fall time. Refer to the Rise/Fall Time Tables to
determine the proper drive strength.
Drive strength code is inserted here. Default setting is “-”
High Output Load Capability
The rise/fall time of the input clock varies as a function of the
actual capacitive load the clock drives. At any given drive
strength, the rise/fall time becomes slower as the output load
increases. As an example, for a 3.3V SiT8208 device with
default drive strength setting, the typical rise/fall time is 1.15ns
for 15 pF output load. The typical rise/fall time slows down to
2.72ns when the output load increases to 45 pF. One can
Rev. 1.02
Page 6 of 10
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SiT8208
Ultra Performance Oscillator
The Smart Timing Choice
Rise/Fall Time (10% to 90%) vs C
Tables
LOAD
Rise/Fall Time Typ (ns)
Rise/Fall Time Typ (ns)
Drive Strength \ C
Drive Strength \ C
60 pF
42.06
21.38
14.59
11.04
8.80
7.33
6.26
5.51
4.92
4.42
4.02
3.69
3.43
3.18
2.98
2.80
2.65
2.50
2.39
2.28
5 pF
8.68
4.42
2.93
2.21
1.67
1.50
1.06
0.98
0.93
0.90
0.87
0.67
0.44
0.38
0.36
0.34
0.33
0.32
0.31
0.30
15 pF
13.59
7.18
4.78
3.57
2.87
2.33
2.04
1.69
1.48
1.37
1.29
1.20
1.10
0.99
0.83
0.71
0.65
0.62
0.59
0.57
30 pF
18.36
11.93
8.15
6.19
4.94
4.11
3.50
3.03
2.69
2.44
2.21
2.00
1.86
1.76
1.66
1.58
1.51
1.44
1.37
1.29
45 pF
32.70
16.60
11.19
8.55
6.85
5.68
4.84
4.20
3.73
3.34
3.04
2.79
2.56
2.37
2.20
2.07
1.95
1.85
1.77
1.70
LOAD
5 pF
12.45
6.50
4.38
3.27
2.62
2.19
1.76
1.59
1.49
1.22
1.07
1.01
0.96
0.92
0.88
0.86
0.82
0.77
0.66
0.51
15 pF
17.68
10.27
7.05
5.30
4.25
3.52
3.01
2.59
2.28
2.10
1.88
1.64
1.50
1.41
1.34
1.29
1.24
1.20
1.15
1.09
30 pF
19.48
16.21
11.61
8.89
7.20
6.00
5.14
4.49
3.96
3.57
3.23
2.95
2.74
2.56
2.39
2.24
2.07
1.94
1.84
1.76
45 pF
46.21
23.92
16.17
12.18
9.81
8.31
7.10
6.25
5.55
5.00
4.50
4.12
3.80
3.52
3.25
3.04
2.89
2.72
2.58
2.45
60 pF
57.82
30.73
20.83
15.75
12.65
10.59
9.15
7.98
7.15
6.46
5.87
5.40
4.98
4.64
4.32
4.06
3.82
3.61
3.41
3.24
LOAD
L
L
A
R
B
S
D
T
A
R
B
S
D
T
E
E
U
F
U
F
W
W
G
X
K
Y
Q
G or "-": Default
X
K
Y
Q
Z
Z or "-": Default
M
N
P
M
N
P
Table 1. Vdd = 1.8V Rise/Fall Times for Specific CLOAD
Table 2. Vdd = 2.5V Rise/Fall Times for Specific CLOAD
Rise/Fall Time Typ (ns)
Rise/Fall Time Typ (ns)
Drive Strength \ C
Drive Strength \ C
5 pF
7.18
3.61
2.31
1.65
1.43
1.01
0.94
0.90
0.86
0.48
0.38
0.36
0.34
0.33
0.32
0.32
0.30
0.30
0.30
0.29
15 pF
11.59
6.02
3.95
2.92
2.26
1.91
1.51
1.36
1.25
1.15
1.04
0.87
0.70
0.63
0.60
0.58
0.56
0.55
0.54
0.52
30 pF
17.24
10.19
6.88
5.12
4.09
3.38
2.86
2.50
2.21
1.95
1.77
1.66
1.56
1.48
1.40
1.31
1.22
1.12
1.02
0.95
45 pF
27.57
13.98
9.42
7.10
5.66
4.69
3.97
3.46
3.03
2.72
2.47
2.23
2.04
1.89
1.79
1.69
1.62
1.54
1.47
1.41
60 pF
35.57
18.10
12.24
9.17
7.34
6.14
5.25
4.58
4.07
3.65
3.31
3.03
2.80
2.61
2.43
2.28
2.17
2.07
1.97
1.90
LOAD
5 pF
7.93
4.06
2.68
2.00
1.59
1.19
1.00
0.94
0.90
0.87
0.62
0.41
0.37
0.35
0.33
0.32
0.31
0.30
0.30
0.29
15 pF
12.69
6.66
4.40
3.25
2.57
2.14
1.79
1.51
1.38
1.29
1.19
1.08
0.96
0.78
0.67
0.63
0.60
0.57
0.56
0.54
30 pF
17.94
11.04
7.53
5.66
4.54
3.76
3.20
2.78
2.48
2.21
1.99
1.84
1.72
1.63
1.54
1.46
1.39
1.31
1.22
1.13
45 pF
30.10
15.31
10.29
7.84
6.27
5.21
4.43
3.84
3.40
3.03
2.76
2.52
2.33
2.15
2.00
1.89
1.80
1.72
1.63
1.55
60 pF
38.89
19.80
13.37
10.11
8.07
6.72
5.77
5.06
4.50
4.05
3.68
3.36
3.15
2.92
2.75
2.57
2.43
2.30
2.22
2.13
LOAD
L
L
A
R
B
S
D
T
A
R
B
S
D
T
E
E
U
F
U
F or "-": Default
W
G
X
W
G or "-": Default
X
K
Y
Q
Z
K
Y
Q
Z
M
N
P
M
N
P
Table 3. Vdd = 2.8V Rise/Fall Times for Specific CLOAD
Table 4. Vdd = 3.3V Rise/Fall Times for Specific CLOAD
Rev. 1.02
Page 7 of 10
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SiT8208
Ultra Performance Oscillator
The Smart Timing Choice
For more information regarding SiTime’s field programmable
solutions, visit http://www.sitime.com/time-machine and
http://www.sitime.com/fp-devices.
Instant Samples with Time Machine and
Field Programmable Oscillators
SiTime supports a field programmable version of the SiT8208
low power oscillator for fast prototyping and real time custom-
ization of features. The field programmable devices (FP
devices) are available for all five standard SiT8208 package
sizes and can be configured to one’s exact specification using
the Time Machine II, an USB powered MEMS oscillator
programmer.
SiT8208 is typically factory-programmed per customer
ordering codes for volume delivery.
Customizable Features of the SiT8208 FP Devices Include
• Any frequency between 1 – 110 MHz
• Three frequency stability options, ±20 PPM, ±25 PPM, ±50
PPM
• Two operating temperatures, -20 to 70°C or -40 to 85°C
• Five supply voltage options, 1.8V, 2.5V, 2.8V, 3.0V, and
3.3V
• Output drive strength
Rev. 1.02
Page 8 of 10
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SiT8208
Ultra Performance Oscillator
The Smart Timing Choice
Dimensions and Patterns
[9]
[10]
Package Size – Dimensions (Unit: mm)
Recommended Land Pattern (Unit: mm)
2.7 x 2.4 x 0.75 mm (100% compatible with 2.5 x 2. 0 mm footprint)
1.9
2.7 ± 0.05
1.00
YXXXX
0.85
0.75 ± 0.05
1.1
3.2 x 2.5 x 0.75 mm
2.2
3.2 ± 0.05
2.1
#4
#3
#3
#4
YXXXX
#1
#2
#2
#1
0.9
1. 4
5.0 x 3.2 x 0.75 mm
2.54
5.0 ± 0.05
2.39
#3
#3
#4
#4
YXXXX
#1
#2
#2
#1
1.15
1.5
7.0 x 5.0 x 0.90 mm
5.08
7.0 ± 0.05
5.08
YXXXX
1.4
2.2
Notes:
9. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of the device.
10. A capacitor of value 0.1 µF between Vdd and GND is recommended.
Rev. 1.02
Page 9 of 10
www.sitime.com
SiT8208
Ultra Performance Oscillator
The Smart Timing Choice
Ordering Information
The Part No. Guide is for reference only. To customize and build an exact part number, use the SiTime Part Number
Generator.
SiT8208AC-23-25E -75.123456T
Packaging
Part Family
“T”: Tape & Reel, 3K reel
“Y”: Tape & Reel, 1K reel
Blank for Bulk
“SiT8208”
Revision Letter
Frequency
1.000000 to 80.000000 MHz
“A” is the silicon revision
Feature Pin
Temperature Range
“E” for Output Enable
“S” for Standby
“C” Ext. Commercial, -20 to 70ºC
“I” Industrial, -40 to 85ºC
Voltage Supply
Output Drive Strength
“18” for 1.8V ±5%
“25” for 2.5V ±10%
“28” for 2.8V ±10%
“33” for 3.3V ±10%
“–” Default (datasheet limits)
See Tables 1 to 5 for rise/fall
times
“Z”
“M”
“N”
“P”
“L”
“S”
“U”
“F”
“W” “Y”
“G” “Q”
“X”
“K”
“A” “D”
“R” “T”
“B” “E”
Frequency Tolerance
“F” for ±10 PPM
“1” for ±20 PPM
“2” for ±25 PPM
“3” for ±50 PPM
Package
“G” 2.5 x 2.0
“2” 3.2 x 2.5
“3” 5.0 x 3.2
“8” 7.0 x 5.0
Additional Information
Document
Description
Download Link
Time Machine II
MEMS oscillator programmer
http://www.sitime.com/support/time-machine-oscillator-programmer
http://www.sitime.com/products/field-programmable-oscillators
Devices that can be programmable in the field by
Time Machine II
Field Programmable
Oscillators
Tape & Reel dimension, reflow profile and other manufacturing http://www.sitime.com/component/docman/doc_download/85-manu
related info
Manufacturing Notes
Qualification Reports
Performance Reports
facturing-notes-for-sitime-oscillators
RoHS report, reliability reports, composition reports
http://www.sitime.com/support/quality-and-reliability
http://www.sitime.com/support/performance-measurement-report
Additional performance data such as phase noise, current
consumption and jitter for selected frequencies
Termination Techniques Termination design recommendations
Layout Techniques Layout recommendations
http://www.sitime.com/support/application-notes
http://www.sitime.com/support/application-notes
© SiTime Corporation 2013. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage or defect of a
Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or accident, (iii)
unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv) improper
installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress.
Disclaimer: SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by
operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or
usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any SiTime product and any product documentation. Products sold by
SiTime are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved
or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below.
CRITICAL USE EXCLUSION POLICY
BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR FACILITIES
OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE.
SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products
does not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the
sale of products or services by SiTime. Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be strictly
prohibited.
Rev. 1.02
Page 10 of 10
www.sitime.com
The Smart Timing Choice
Supplemental Information
The Supplemental Information section is not part of the datasheet and is for informational purposes only.
SiTime Corporation
990 Almanor Avenue
Sunnyvale, CA 94085
(408) 328-4400
www.sitime.com
The Smart Timing Choice
Silicon MEMS Outperforms Quartz
SiTime Corporation
990 Almanor Avenue
Sunnyvale, CA 94085
(408) 328-4400
www.sitime.com
Silicon MEMS Outperforms Quartz Rev. 1.0
Revised January 16, 2013
Silicon MEMS Outperforms Quartz
The Smart Timing Choice
Best Reliability
Best Electro Magnetic Susceptibility (EMS)
Silicon is inherently more reliable than quartz. Unlike quartz
suppliers, SiTime has in-house MEMS and analog CMOS
expertise, which allows SiTime to develop the most reliable
SiTime’s oscillators in plastic packages are up to 54 times
more immune to external electromagnetic fields than quartz
oscillators as shown in Figure 3.
products. Figure
technology.
1 shows a comparison with quartz
Why is SiTime Best in Class:
• Internal differential architecture for best common mode
noise rejection
Why is SiTime Best in Class:
• SiTime’s MEMS resonators are vacuum sealed using an
advanced Epi-Seal™ process, which eliminates foreign
particles and improves long term aging and reliability
• Electrostatically driven MEMS resonator is more immune
to EMS
• World-class MEMS and CMOS design expertise
SiTime vs Quartz
Electro Magnetic Susceptibility (EMS)
Mean Time Between Failure (Million Hours)
- 30
- 39
- 40
500
SiTime
- 42
- 43
- 40
- 50
- 60
- 70
- 80
- 90
- 45
IDT (Fox)
38
28
16
14
SiTime
20X Better
SiTime
54X Better
Epson
- 73
TXC
Pericom
Epson
Kyocera
TXC
CW
SiLabs SiTime
600
200
400
0
Figure 1. Reliability Comparison[1]
Figure 3. Electro Magnetic Susceptibility (EMS)[3]
Best Aging
Best Power Supply Noise Rejection
Unlike quartz, MEMS oscillators have excellent long term
aging performance which is why every new SiTime product
specifies 10-year aging. A comparison is shown in Figure 2.
SiTime’s MEMS oscillators are more resilient against noise on
the power supply. A comparison is shown in Figure 4.
Why is SiTime Best in Class:
Why is SiTime Best in Class:
• On-chip regulators and internal differential architecture for
common mode noise rejection
• SiTime’s MEMS resonators are vacuum sealed using an
advanced Epi-Seal™ process, which eliminates foreign
particles and improves long term aging and reliability
• Best analog CMOS design expertise
• Inherently better immunity of electrostatically driven
MEMS resonator
Power Supply Noise Rejection
SiTime MEMS vs. Quartz Aging
SiTIme
NDK
Epson
Kyocera
SiTime MEMS Oscillator
Quartz Oscillator
5.0
4.0
3.0
2.0
1.0
0.0
10
8
8.0
SiTime
2X Better
6
4
2
0
3.5
SiTime
3X Better
3.0
1.5
10
100
1,000
10,000
10-Year
Power Supply Noise Frequency (kHz)
1-Year
Figure 4. Power Supply Noise Rejection[4]
Figure 2. Aging Comparison[2]
Silicon MEMS Outperforms Quartz Rev. 1.0
www.sitime.com
Silicon MEMS Outperforms Quartz
The Smart Timing Choice
Best Vibration Robustness
Best Shock Robustness
SiTime’s oscillators can withstand at least 50,000 g shock.
They all maintain their electrical performance in operation
during shock events. A comparison with quartz devices is
shown in Figure 6.
High-vibration environments are all around us. All electronics,
from handheld devices to enterprise servers and storage
systems are subject to vibration. Figure 5 shows a comparison
of vibration robustness.
Why is SiTime Best in Class:
Why is SiTime Best in Class:
• The moving mass of SiTime’s MEMS resonators is up to
3000 times smaller than quartz
• The moving mass of SiTime’s MEMS resonators is up to
3000 times smaller than quartz
• Center-anchored MEMS resonator is the most robust
design
• Center-anchored MEMS resonator is the most robust
design
VibrationSensitivityvs. Frequency
Differential XO Shock Robustness - 500 g
16
SiTime TXC Epson Connor Winfield
Kyocera SiLabs
14.3
100.00
10.00
1.00
14
12.6
12
10
8
SiTime
Up to 25x
Better
6
SiTime
Up to 30x
Better
3.9
4
2.9
2.5
2
0.6
0.10
0
10
100
VibrationFrequency(Hz)
1000
Kyocera Epson
TXC
CW
SiLabs SiTime
Figure 5. Vibration Robustness[5]
Figure 6. Shock Robustness[6]
Notes:
1. Data Source: Reliability documents of named companies.
2. Data source: SiTime and quartz oscillator devices datasheets.
3. Test conditions for Electro Magnetic Susceptibility (EMS):
• According to IEC EN61000-4.3 (Electromagnetic compatibility standard)
• Field strength: 3V/m
• Radiated signal modulation: AM 1 kHz at 80% depth
• Carrier frequency scan: 80 MHz – 1 GHz in 1% steps
• Antenna polarization: Vertical
• DUT position: Center aligned to antenna
Devices used in this test:
SiTime, SiT9120AC-1D2-33E156.250000 - MEMS based - 156.25 MHz
Epson, EG-2102CA 156.2500M-PHPAL3 - SAW based - 156.25 MHz
TXC, BB-156.250MBE-T - 3rd Overtone quartz based - 156.25 MHz
Kyocera, KC7050T156.250P30E00 - SAW based - 156.25 MHz
Connor Winfield (CW), P123-156.25M - 3rd overtone quartz based - 156.25 MHz
SiLabs, Si590AB-BDG - 3rd overtone quartz based - 156.25 MHz
4. 50 mV pk-pk Sinusoidal voltage.
Devices used in this test:
SiTime, SiT8208AI-33-33E-25.000000, MEMS based - 25 MHz
NDK, NZ2523SB-25.6M - quartz based - 25.6 MHz
Kyocera, KC2016B25M0C1GE00 - quartz based - 25 MHz
Epson, SG-310SCF-25M0-MB3 - quartz based - 25 MHz
5. Devices used in this test: same as EMS test stated in Note 3.
6. Test conditions for shock test:
• MIL-STD-883F Method 2002
• Condition A: half sine wave shock pulse, 500-g, 1ms
• Continuous frequency measurement in 100 μs gate time for 10 seconds
Devices used in this test: same as EMS test stated in Note 3
7. Additional data, including setup and detailed results, is available upon request to qualified customers. Please contact productsupport@sitime.com.
Silicon MEMS Outperforms Quartz Rev. 1.0
www.sitime.com
Document Feedback Form
The Smart Timing Choice
SiTime values your input in improving our documentation. Click here for our online feedback form or fill out and email the form
below to productsupport@sitime.com.
1. Does the Electrical Characteristics table provide complete information?
If No, what parameters are missing?
Yes
No
_________________________________________________________________________________________________
2. Is the organization of this document easy to follow?
If “No,” please suggest improvements that we can make:
Yes
No
_________________________________________________________________________________________________
3. Is there any application specific information that you would like to see in this document? (Check all that apply)
EMI
Termination recommendations
Shock and vibration performance
Other
If “Other,” please specify:
_________________________________________________________________________________________________
4. Are there any errors in this document?
If “Yes”, please specify (what and where):
Yes
No
_________________________________________________________________________________________________
5. Do you have additional recommendations for this document?
_________________________________________________________________________________________________
Name ________________________________________________________________________________
Title
________________________________________________________________________________
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Thank you for your feedback. Please click the email icon in your Adobe Reader tool bar and send to productsupport@sitime.com.
Or you may use our online feedback form.
Feedback Form Rev. 1.0
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