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SIT8208AC-2F-33S-12.800000Y

更新时间：2025-06-29 20:34:56
品牌：ETC
描述：-20 TO 70C, 3225, 10PPM, 3.3V, 1

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SIT8208AC-2F-33S-12.800000Y 概述

-20 TO 70C, 3225, 10PPM, 3.3V, 1

SIT8208AC-2F-33S-12.800000Y 数据手册

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SiT8208  
Ultra Performance Oscillator  
The Smart Timing Choice  
Features  
Applications  
Any frequency between 1 and 80 MHz accurate to 6 decimal places  
100% pin-to-pin drop-in replacement to quartz-based oscillators  
Ultra low phase jitter: 0.5 ps (12 kHz to 20 MHz)  
Frequency stability as low as ±10 PPM  
SATA, SAS, Ethernet, PCI Express, video, WiFi  
Computing, storage, networking, telecom, industrial control  
Industrial or extended commercial temperature range  
LVCMOS/LVTTL compatible output  
Standard 4-pin packages: 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2,  
7.0 x 5.0 mm x mm  
Instant samples with Time Machine II and field programmable  
oscillators  
Outstanding silicon reliability of 2 FIT or 500 million hour MTBF  
Pb-free, RoHS and REACH compliant  
Ultra short lead time  
[1]  
Electrical Characteristics  
Parameter  
Output Frequency Range  
Frequency Stability  
Symbol  
Min.  
Typ.  
Max.  
Frequency Range  
80 MHz  
Unit  
Condition  
f
1
–
Frequency Stability and Aging  
F_stab  
-10  
-20  
-25  
-50  
-1.5  
-5  
–
–
–
–
–
–
+10  
+20  
+25  
+50  
+1.5  
+5  
PPM  
PPM  
PPM  
PPM  
PPM  
PPM  
Inclusive of Initial tolerance at 25 °C, and variations over  
operating temperature, rated power supply voltage and load  
First year Aging  
10-year Aging  
F_aging  
T_use  
Vdd  
25°C  
25°C  
Operating Temperature Range  
Operating Temperature Range  
Supply Voltage  
-20  
-40  
–
–
+70  
+85  
°C  
°C  
Extended Commercial  
Industrial  
Supply Voltage and Current Consumption  
1.71  
2.25  
2.52  
2.97  
–
1.8  
2.5  
2.8  
3.3  
31  
29  
–
1.89  
2.75  
3.08  
3.63  
33  
V
V
Supply voltages between 2.5V and 3.3V can be supported.  
Contact SiTime for additional information.  
V
V
Current Consumption  
OE Disable Current  
Idd  
mA  
mA  
mA  
No load condition, f = 20 MHz, Vdd = 2.5V, 2.8V or 3.3V  
No load condition, f = 20 MHz, Vdd = 1.8V  
–
31  
I_OD  
–
31  
Vdd = 2.5V, 2.8V or 3.3V, OE = GND, output is Weakly Pulled  
Down  
–
–
–
–
30  
70  
mA  
Vdd = 1.8 V. OE = GND, output is Weakly Pulled Down  
Standby Current  
I_std  
A  
Vdd = 2.5V, 2.8V or 3.3V, ST = GND, output is Weakly Pulled  
Down  
–
–
10  
A  
Vdd = 1.8 V. ST = GND, output is Weakly Pulled Down  
LVCMOS Output Characteristics  
Duty Cycle  
DC  
45  
–
–
1.2  
–
55  
2
%
Rise/Fall Time  
Tr, Tf  
VOH  
VOL  
ns  
15 pF load, 10% - 90% Vdd  
Output Voltage High  
Output Voltage Low  
90%  
–
–
Vdd  
Vdd  
IOH = -6 mA, IOL = 6 mA, (Vdd = 3.3V, 2.8V, 2.5V)  
IOH = -3 mA, IOL = 3 mA, (Vdd = 1.8V)  
–
10%  
Input Characteristics  
Input Voltage High  
VIH  
VIL  
70%  
–
–
–
30%  
250  
–
Vdd  
Pin 1, OE or ST  
Input Voltage Low  
–
–
2
Vdd  
kΩ  
Pin 1, OE or ST  
Input Pull-up Impedance  
Z_in  
100  
–
Pin 1, OE logic high or logic low, or ST logic high  
Pin 1, ST logic low  
MΩ  
Note:  
1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated.  
SiTime Corporation  
Rev. 1.02  
990 Almanor Avenue  
Sunnyvale, CA 94085  
(408) 328-4400  
www.sitime.com  
Revised June 24, 2013  
SiT8208  
Ultra Performance Oscillator  
The Smart Timing Choice  
[1]  
Electrical Characteristics (Continued)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Condition  
Startup and Resume Timing  
Startup Time  
T_start  
T_oe  
–
–
–
7
–
6
10  
150  
10  
ms  
ns  
Measured from the time Vdd reaches its rated minimum value  
f = 80 MHz, For other frequencies, T_oe = 100 ns + 3 cycles  
OE Enable/Disable Time  
Resume Time  
T_resume  
ms  
In standby mode, measured from the time ST pin crosses 50%  
threshold. Refer to Figure 5.  
Jitter  
RMS Period Jitter  
T_jitt  
–
–
–
1.5  
2
2
3
1
ps  
ps  
ps  
f = 75 MHz, Vdd = 1.8V  
RMS Phase Jitter (random)  
Note:  
T_phj  
0.5  
f = 10 MHz, Integration bandwidth = 12 kHz to 20 MHz  
1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated.  
Pin Configuration  
Pin  
Symbol  
Functionality  
[2]  
Top View  
Output  
Enable  
H or Open : specified frequency output  
L: output is high impedance. Only output driver is disabled.  
[2]  
1
OE/ ST  
H or Open : specified frequency output  
1
2
4
3
OE/ST  
GND  
VDD  
OUT  
Standby  
L: output is low (weak pull down). Device goes to sleep mode. Supply  
current reduces to I_std.  
[3]  
2
3
4
GND  
OUT  
VDD  
Power  
Output  
Power  
Electrical ground  
Oscillator output  
[3]  
Power supply voltage  
Notes:  
2. A pull-up resistor of <10 kΩ between OE/ ST pin and Vdd is recommended in high noise environment.  
3. A capacitor of value 0.1 µF between Vdd and GND is recommended.  
Absolute Maximum  
Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual perfor-  
mance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.  
Parameter  
Min.  
-65  
-0.5  
–
Max.  
150  
4
Unit  
°C  
V
Storage Temperature  
VDD  
Electrostatic Discharge  
2000  
260  
150  
V
Soldering Temperature (follow standard Pb free soldering guidelines)  
Junction Temperature  
–
°C  
°C  
–
Thermal Consideration  
JA, 4 Layer Board  
JA, 2 Layer Board  
JC, Bottom  
Package  
7050  
(°C/W)  
(°C/W)  
263  
(°C/W)  
191  
97  
30  
24  
27  
26  
5032  
199  
3225  
109  
117  
212  
2520  
222  
Environmental Compliance  
Parameter  
Condition/Test Method  
Mechanical Shock  
MIL-STD-883F, Method 2002  
MIL-STD-883F, Method 2007  
JESD22, Method A104  
MIL-STD-883F, Method 2003  
MSL1 @ 260°C  
Mechanical Vibration  
Temperature Cycle  
Solderability  
Moisture Sensitivity Level  
Rev. 1.02  
Page 2 of 10  
www.sitime.com  
SiT8208  
Ultra Performance Oscillator  
The Smart Timing Choice  
Phase Noise Plot  
-100  
-110  
Integrated random phase jitter (RMS, 12kHz-5MHz): 0.52ps  
-120  
-130  
-140  
-150  
-160  
-170  
103  
104  
105  
106  
Frequency Offset (Hz)  
Figure 1. Phase Noise, 10 MHz, 3.3V, LVCMOS Output  
Test Circuit and Waveform  
Vdd  
Vout  
Test  
Point  
tr  
tf  
4
3
2
90% Vdd  
50%  
Power  
Supply  
15pF  
(including probe  
and fixture  
0.1µF  
1
10% Vdd  
High Pulse  
(TH)  
capacitance)  
Low Pulse  
(TL)  
OE/ST Function  
Period  
Vdd  
1k  
Figure 3. Waveform  
Figure 2. Test Circuit  
Notes:  
4. Duty Cycle is computed as Duty Cycle = TH/Period.  
5. SiT8208 supports the configurable duty cycle feature. For custom duty cycle at any given frequency, contact SiTime.  
Rev. 1.02  
Page 3 of 10  
www.sitime.com  
SiT8208  
Ultra Performance Oscillator  
The Smart Timing Choice  
Timing Diagram  
90% Vdd, 2.5/2,8/3.3V devices  
Vdd  
95% Vdd, 1.8V devices  
Pin 4 Voltage  
Vdd  
ST Voltage  
50% Vdd  
NO Glitch first cycle  
T_resume  
T_start  
CLK Output  
CLK Output  
T_start: Time to start from power-off  
T_resume: Time to resume from ST  
Figure 4. Startup Timing (OE/ST Mode)  
Figure 5. Standby Resume Timing (ST Mode Only)  
u
Vdd  
Vdd  
OE Voltage  
OE Voltage  
50% Vdd  
T_OE  
50% Vdd  
CLK Output  
CLK Output  
T_OE  
HZ  
T_OE: Time to re-enable the clock output  
T_OE: Time to put the output drive in High Z mode  
Figure 6. OE Enable Timing (OE Mode Only)  
Figure 7. OE Disable Timing (OE Mode Only)  
Notes:  
6. SiT8208 supports NO RUNT pulses and No glitches during startup or resume.  
7. SiT8208 supports gated output which is accurate within rated frequency stability from the first cycle.  
Rev. 1.02  
Page 4 of 10  
www.sitime.com  
SiT8208  
Ultra Performance Oscillator  
The Smart Timing Choice  
Performance Plots  
3.3V  
2.5V  
1.8V  
3.3V  
2.5V  
1.8V  
3.00  
2.50  
2.00  
1.50  
1.00  
0.50  
0.00  
40.0  
38.0  
36.0  
34.0  
32.0  
30.0  
28.0  
26.0  
24.0  
22.0  
20.0  
10  
20  
30  
40  
50  
60  
70  
80  
10  
20  
30  
40  
50  
60  
70  
80  
Frequency, MHz  
Frequency, MHz  
Figure 8. Idd vs Frequency  
Figure 9. RMS Period Jitter vs Frequency  
2.5V  
3.3V  
1.8V  
3.3V  
2.5V  
1.8V  
1
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
55.0  
54.0  
53.0  
52.0  
51.0  
50.0  
49.0  
48.0  
47.0  
46.0  
45.0  
10  
20  
30  
40  
50  
60  
70  
80  
10  
20  
30  
40  
50  
60  
70  
80  
Frequency, MHz  
Frequency, MHz  
Figure 10. Duty Cycle vs Frequency  
Figure 11. RMS Phase Jitter vs Frequency  
1.8V  
2.5V  
3.3V  
1.8V  
2.5V  
3.3V  
2.0  
1.5  
1.0  
0.5  
0.0  
35  
33  
31  
29  
27  
25  
-40  
-20  
0
20  
40  
60  
80  
-40  
-20  
0
20  
Temperature, °C  
40  
60  
80  
Temperature, °C  
Figure 12. Idd vs Temperature, 10 MHz Output  
Figure 13. Rise Time vs Temperature, 75 MHz Output  
Note:  
8. All plots are measured with 15 pF load at room temperature, unless otherwise stated.  
Rev. 1.02  
Page 5 of 10  
www.sitime.com  
SiT8208  
Ultra Performance Oscillator  
The Smart Timing Choice  
choose to speed up the rise/fall time to 1.41ns by then  
increasing the drive strength setting on the SiT8208.  
Programmable Drive Strength  
The SiT8208 includes a programmable drive strength feature  
to provide a simple, flexible tool to optimize the clock rise/fall  
time for specific applications. Benefits from the programmable  
drive strength feature are:  
The SiT8208 can support up to 60 pF or higher in maximum  
capacitive loads with up to 3 additional drive strength settings.  
Refer to the Rise/Tall Time Tables to determine the proper  
drive strength for the desired combination of output load vs.  
rise/fall time  
• Improves system radiated electromagnetic interference  
(EMI) by slowing down the clock rise/fall time  
• Improves the downstream clock receiver’s (RX) jitter by de-  
creasing (speeding up) the clock rise/fall time.  
• Ability to drive large capacitive loads while maintaining full  
swing with sharp edge rates.  
SiT8208 Drive Strength Selection  
Tables 1 through 5 define the rise/fall time for a given capac-  
itive load and supply voltage.  
For more detailed information about rise/fall time control and  
drive strength selection, see the SiTime Applications Note  
section; http://www.sitime.com/support/application-notes.  
1. Select the table that matches the SiT8208 nominal supply  
voltage (1.8V, 2.5V, 2.8V, 3.0V, 3.3V).  
2. Select the capacitive load column that matches the appli-  
cation requirement (5 pF to 60 pF)  
EMI Reduction by Slowing Rise/Fall Time  
3. Under the capacitive load column, select the desired  
rise/fall times.  
Figure 14 shows the harmonic power reduction as the rise/fall  
times are increased (slowed down). The rise/fall times are  
expressed as a ratio of the clock period. For the ratio of 0.05,  
the signal is very close to a square wave. For the ratio of 0.45,  
the rise/fall times are very close to near-triangular waveform.  
These results, for example, show that the 11th clock harmonic  
can be reduced by 35 dB if the rise/fall edge is increased from  
5% of the period to 45% of the period.  
4. The left-most column represents the part number code for  
the corresponding drive strength.  
5. Add the drive strength code to the part number for ordering  
purposes.  
Calculating Maximum Frequency  
Based on the rise and fall time data given in Tables 1 through  
4, the maximum frequency the oscillator can operate with  
guaranteed full swing of the output voltage over temperature  
as follows:  
trise=0.05  
trise=0.1  
10  
0
trise=0.15  
trise=0.2  
trise=0.25  
trise=0.3  
-10  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
trise=0.35  
trise=0.4  
1
trise=0.45  
Max Frequency =  
6 x (Trise)  
Example 1  
Calculate fMAX for the following condition:  
• Vdd = 1.8V (Table 1)  
• Capacitive Load: 30 pF  
1
3
5
7
9
11  
Harmonic number  
• Desired Tr/f time = 3 ns (rise/fall time part number code = G)  
Figure 14. Harmonic EMI reduction as a Function of  
Slower Rise/Fall Time  
Part number for the above example:  
SiT8208AIGG2-18E-55.500000  
Jitter Reduction with Faster Rise/Fall Time  
Power supply noise can be a source of jitter for the  
downstream chipset. One way to reduce this jitter is to  
increase rise/fall time (edge rate) of the input clock. Some  
chipsets would require faster rise/fall time in order to reduce  
their sensitivity to this type of jitter. The SiT8208SiT8208  
provides up to 3 additional high drive strength settings for very  
fast rise/fall time. Refer to the Rise/Fall Time Tables to  
determine the proper drive strength.  
Drive strength code is inserted here. Default setting is “-”  
High Output Load Capability  
The rise/fall time of the input clock varies as a function of the  
actual capacitive load the clock drives. At any given drive  
strength, the rise/fall time becomes slower as the output load  
increases. As an example, for a 3.3V SiT8208 device with  
default drive strength setting, the typical rise/fall time is 1.15ns  
for 15 pF output load. The typical rise/fall time slows down to  
2.72ns when the output load increases to 45 pF. One can  
Rev. 1.02  
Page 6 of 10  
www.sitime.com  
SiT8208  
Ultra Performance Oscillator  
The Smart Timing Choice  
Rise/Fall Time (10% to 90%) vs C  
Tables  
LOAD  
Rise/Fall Time Typ (ns)  
Rise/Fall Time Typ (ns)  
Drive Strength \ C  
Drive Strength \ C  
60 pF  
42.06  
21.38  
14.59  
11.04  
8.80  
7.33  
6.26  
5.51  
4.92  
4.42  
4.02  
3.69  
3.43  
3.18  
2.98  
2.80  
2.65  
2.50  
2.39  
2.28  
5 pF  
8.68  
4.42  
2.93  
2.21  
1.67  
1.50  
1.06  
0.98  
0.93  
0.90  
0.87  
0.67  
0.44  
0.38  
0.36  
0.34  
0.33  
0.32  
0.31  
0.30  
15 pF  
13.59  
7.18  
4.78  
3.57  
2.87  
2.33  
2.04  
1.69  
1.48  
1.37  
1.29  
1.20  
1.10  
0.99  
0.83  
0.71  
0.65  
0.62  
0.59  
0.57  
30 pF  
18.36  
11.93  
8.15  
6.19  
4.94  
4.11  
3.50  
3.03  
2.69  
2.44  
2.21  
2.00  
1.86  
1.76  
1.66  
1.58  
1.51  
1.44  
1.37  
1.29  
45 pF  
32.70  
16.60  
11.19  
8.55  
6.85  
5.68  
4.84  
4.20  
3.73  
3.34  
3.04  
2.79  
2.56  
2.37  
2.20  
2.07  
1.95  
1.85  
1.77  
1.70  
LOAD  
5 pF  
12.45  
6.50  
4.38  
3.27  
2.62  
2.19  
1.76  
1.59  
1.49  
1.22  
1.07  
1.01  
0.96  
0.92  
0.88  
0.86  
0.82  
0.77  
0.66  
0.51  
15 pF  
17.68  
10.27  
7.05  
5.30  
4.25  
3.52  
3.01  
2.59  
2.28  
2.10  
1.88  
1.64  
1.50  
1.41  
1.34  
1.29  
1.24  
1.20  
1.15  
1.09  
30 pF  
19.48  
16.21  
11.61  
8.89  
7.20  
6.00  
5.14  
4.49  
3.96  
3.57  
3.23  
2.95  
2.74  
2.56  
2.39  
2.24  
2.07  
1.94  
1.84  
1.76  
45 pF  
46.21  
23.92  
16.17  
12.18  
9.81  
8.31  
7.10  
6.25  
5.55  
5.00  
4.50  
4.12  
3.80  
3.52  
3.25  
3.04  
2.89  
2.72  
2.58  
2.45  
60 pF  
57.82  
30.73  
20.83  
15.75  
12.65  
10.59  
9.15  
7.98  
7.15  
6.46  
5.87  
5.40  
4.98  
4.64  
4.32  
4.06  
3.82  
3.61  
3.41  
3.24  
LOAD  
L
L
A
R
B
S
D
T
A
R
B
S
D
T
E
E
U
F
U
F
W
W
G
X
K
Y
Q
G or "-": Default  
X
K
Y
Q
Z
Z or "-": Default  
M
N
P
M
N
P
Table 1. Vdd = 1.8V Rise/Fall Times for Specific CLOAD  
Table 2. Vdd = 2.5V Rise/Fall Times for Specific CLOAD  
Rise/Fall Time Typ (ns)  
Rise/Fall Time Typ (ns)  
Drive Strength \ C  
Drive Strength \ C  
5 pF  
7.18  
3.61  
2.31  
1.65  
1.43  
1.01  
0.94  
0.90  
0.86  
0.48  
0.38  
0.36  
0.34  
0.33  
0.32  
0.32  
0.30  
0.30  
0.30  
0.29  
15 pF  
11.59  
6.02  
3.95  
2.92  
2.26  
1.91  
1.51  
1.36  
1.25  
1.15  
1.04  
0.87  
0.70  
0.63  
0.60  
0.58  
0.56  
0.55  
0.54  
0.52  
30 pF  
17.24  
10.19  
6.88  
5.12  
4.09  
3.38  
2.86  
2.50  
2.21  
1.95  
1.77  
1.66  
1.56  
1.48  
1.40  
1.31  
1.22  
1.12  
1.02  
0.95  
45 pF  
27.57  
13.98  
9.42  
7.10  
5.66  
4.69  
3.97  
3.46  
3.03  
2.72  
2.47  
2.23  
2.04  
1.89  
1.79  
1.69  
1.62  
1.54  
1.47  
1.41  
60 pF  
35.57  
18.10  
12.24  
9.17  
7.34  
6.14  
5.25  
4.58  
4.07  
3.65  
3.31  
3.03  
2.80  
2.61  
2.43  
2.28  
2.17  
2.07  
1.97  
1.90  
LOAD  
5 pF  
7.93  
4.06  
2.68  
2.00  
1.59  
1.19  
1.00  
0.94  
0.90  
0.87  
0.62  
0.41  
0.37  
0.35  
0.33  
0.32  
0.31  
0.30  
0.30  
0.29  
15 pF  
12.69  
6.66  
4.40  
3.25  
2.57  
2.14  
1.79  
1.51  
1.38  
1.29  
1.19  
1.08  
0.96  
0.78  
0.67  
0.63  
0.60  
0.57  
0.56  
0.54  
30 pF  
17.94  
11.04  
7.53  
5.66  
4.54  
3.76  
3.20  
2.78  
2.48  
2.21  
1.99  
1.84  
1.72  
1.63  
1.54  
1.46  
1.39  
1.31  
1.22  
1.13  
45 pF  
30.10  
15.31  
10.29  
7.84  
6.27  
5.21  
4.43  
3.84  
3.40  
3.03  
2.76  
2.52  
2.33  
2.15  
2.00  
1.89  
1.80  
1.72  
1.63  
1.55  
60 pF  
38.89  
19.80  
13.37  
10.11  
8.07  
6.72  
5.77  
5.06  
4.50  
4.05  
3.68  
3.36  
3.15  
2.92  
2.75  
2.57  
2.43  
2.30  
2.22  
2.13  
LOAD  
L
L
A
R
B
S
D
T
A
R
B
S
D
T
E
E
U
F
U
F or "-": Default  
W
G
X
W
G or "-": Default  
X
K
Y
Q
Z
K
Y
Q
Z
M
N
P
M
N
P
Table 3. Vdd = 2.8V Rise/Fall Times for Specific CLOAD  
Table 4. Vdd = 3.3V Rise/Fall Times for Specific CLOAD  
Rev. 1.02  
Page 7 of 10  
www.sitime.com  
SiT8208  
Ultra Performance Oscillator  
The Smart Timing Choice  
For more information regarding SiTime’s field programmable  
solutions, visit http://www.sitime.com/time-machine and  
http://www.sitime.com/fp-devices.  
Instant Samples with Time Machine and  
Field Programmable Oscillators  
SiTime supports a field programmable version of the SiT8208  
low power oscillator for fast prototyping and real time custom-  
ization of features. The field programmable devices (FP  
devices) are available for all five standard SiT8208 package  
sizes and can be configured to one’s exact specification using  
the Time Machine II, an USB powered MEMS oscillator  
programmer.  
SiT8208 is typically factory-programmed per customer  
ordering codes for volume delivery.  
Customizable Features of the SiT8208 FP Devices Include  
• Any frequency between 1 – 110 MHz  
• Three frequency stability options, ±20 PPM, ±25 PPM, ±50  
PPM  
• Two operating temperatures, -20 to 70°C or -40 to 85°C  
• Five supply voltage options, 1.8V, 2.5V, 2.8V, 3.0V, and  
3.3V  
• Output drive strength  
Rev. 1.02  
Page 8 of 10  
www.sitime.com  
SiT8208  
Ultra Performance Oscillator  
The Smart Timing Choice  
Dimensions and Patterns  
[9]  
[10]  
Package Size – Dimensions (Unit: mm)  
Recommended Land Pattern (Unit: mm)  
2.7 x 2.4 x 0.75 mm (100% compatible with 2.5 x 2. 0 mm footprint)  
1.9  
2.7 ± 0.05  
1.00  
YXXXX  
0.85  
0.75 ± 0.05  
1.1  
3.2 x 2.5 x 0.75 mm  
2.2  
3.2 ± 0.05  
2.1  
#4  
#3  
#3  
#4  
YXXXX  
#1  
#2  
#2  
#1  
0.9  
1. 4  
5.0 x 3.2 x 0.75 mm  
2.54  
5.0 ± 0.05  
2.39  
#3  
#3  
#4  
#4  
YXXXX  
#1  
#2  
#2  
#1  
1.15  
1.5  
7.0 x 5.0 x 0.90 mm  
5.08  
7.0 ± 0.05  
5.08  
YXXXX  
1.4  
2.2  
Notes:  
9. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of the device.  
10. A capacitor of value 0.1 µF between Vdd and GND is recommended.  
Rev. 1.02  
Page 9 of 10  
www.sitime.com  
SiT8208  
Ultra Performance Oscillator  
The Smart Timing Choice  
Ordering Information  
The Part No. Guide is for reference only. To customize and build an exact part number, use the SiTime Part Number  
Generator.  
SiT8208AC-23-25E -75.123456T  
Packaging  
Part Family  
“T”: Tape & Reel, 3K reel  
“Y”: Tape & Reel, 1K reel  
Blank for Bulk  
“SiT8208”  
Revision Letter  
Frequency  
1.000000 to 80.000000 MHz  
“A” is the silicon revision  
Feature Pin  
Temperature Range  
“E” for Output Enable  
“S” for Standby  
“C” Ext. Commercial, -20 to 70ºC  
“I” Industrial, -40 to 85ºC  
Voltage Supply  
Output Drive Strength  
“18” for 1.8V ±5%  
“25” for 2.5V ±10%  
“28” for 2.8V ±10%  
“33” for 3.3V ±10%  
“–” Default (datasheet limits)  
See Tables 1 to 5 for rise/fall  
times  
“Z”  
“M”  
“N”  
“P”  
“L”  
“S”  
“U”  
“F”  
“W” “Y”  
“G” “Q”  
“X”  
“K”  
“A” “D”  
“R” “T”  
“B” “E”  
Frequency Tolerance  
“F” for ±10 PPM  
“1” for ±20 PPM  
“2” for ±25 PPM  
“3” for ±50 PPM  
Package  
“G” 2.5 x 2.0  
“2” 3.2 x 2.5  
“3” 5.0 x 3.2  
“8” 7.0 x 5.0  
Additional Information  
Document  
Description  
Download Link  
Time Machine II  
MEMS oscillator programmer  
http://www.sitime.com/support/time-machine-oscillator-programmer  
http://www.sitime.com/products/field-programmable-oscillators  
Devices that can be programmable in the field by  
Time Machine II  
Field Programmable  
Oscillators  
Tape & Reel dimension, reflow profile and other manufacturing http://www.sitime.com/component/docman/doc_download/85-manu  
related info  
Manufacturing Notes  
Qualification Reports  
Performance Reports  
facturing-notes-for-sitime-oscillators  
RoHS report, reliability reports, composition reports  
http://www.sitime.com/support/quality-and-reliability  
http://www.sitime.com/support/performance-measurement-report  
Additional performance data such as phase noise, current  
consumption and jitter for selected frequencies  
Termination Techniques Termination design recommendations  
Layout Techniques Layout recommendations  
http://www.sitime.com/support/application-notes  
http://www.sitime.com/support/application-notes  
© SiTime Corporation 2013. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage or defect of a  
Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or accident, (iii)  
unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv) improper  
installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress.  
Disclaimer: SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by  
operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or  
usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any SiTime product and any product documentation. Products sold by  
SiTime are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved  
or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below.  
CRITICAL USE EXCLUSION POLICY  
BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR FACILITIES  
OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE.  
SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products  
does not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the  
sale of products or services by SiTime. Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be strictly  
prohibited.  
Rev. 1.02  
Page 10 of 10  
www.sitime.com  
The Smart Timing Choice  
Supplemental Information  
The Supplemental Information section is not part of the datasheet and is for informational purposes only.  
SiTime Corporation  
990 Almanor Avenue  
Sunnyvale, CA 94085  
(408) 328-4400  
www.sitime.com  
The Smart Timing Choice  
Silicon MEMS Outperforms Quartz  
SiTime Corporation  
990 Almanor Avenue  
Sunnyvale, CA 94085  
(408) 328-4400  
www.sitime.com  
Silicon MEMS Outperforms Quartz Rev. 1.0  
Revised January 16, 2013  
Silicon MEMS Outperforms Quartz  
The Smart Timing Choice  
Best Reliability  
Best Electro Magnetic Susceptibility (EMS)  
Silicon is inherently more reliable than quartz. Unlike quartz  
suppliers, SiTime has in-house MEMS and analog CMOS  
expertise, which allows SiTime to develop the most reliable  
SiTime’s oscillators in plastic packages are up to 54 times  
more immune to external electromagnetic fields than quartz  
oscillators as shown in Figure 3.  
products. Figure  
technology.  
1 shows a comparison with quartz  
Why is SiTime Best in Class:  
• Internal differential architecture for best common mode  
noise rejection  
Why is SiTime Best in Class:  
• SiTime’s MEMS resonators are vacuum sealed using an  
advanced Epi-Seal™ process, which eliminates foreign  
particles and improves long term aging and reliability  
• Electrostatically driven MEMS resonator is more immune  
to EMS  
• World-class MEMS and CMOS design expertise  
SiTime vs Quartz  
Electro Magnetic Susceptibility (EMS)  
Mean Time Between Failure (Million Hours)  
- 30  
- 39  
- 40  
500  
SiTime  
- 42  
- 43  
- 40  
- 50  
- 60  
- 70  
- 80  
- 90  
- 45  
IDT (Fox)  
38  
28  
16  
14  
SiTime  
20X Better  
SiTime  
54X Better  
Epson  
- 73  
TXC  
Pericom  
Epson  
Kyocera  
TXC  
CW  
SiLabs SiTime  
600  
200  
400  
0
Figure 1. Reliability Comparison[1]  
Figure 3. Electro Magnetic Susceptibility (EMS)[3]  
Best Aging  
Best Power Supply Noise Rejection  
Unlike quartz, MEMS oscillators have excellent long term  
aging performance which is why every new SiTime product  
specifies 10-year aging. A comparison is shown in Figure 2.  
SiTime’s MEMS oscillators are more resilient against noise on  
the power supply. A comparison is shown in Figure 4.  
Why is SiTime Best in Class:  
Why is SiTime Best in Class:  
• On-chip regulators and internal differential architecture for  
common mode noise rejection  
• SiTime’s MEMS resonators are vacuum sealed using an  
advanced Epi-Seal™ process, which eliminates foreign  
particles and improves long term aging and reliability  
• Best analog CMOS design expertise  
• Inherently better immunity of electrostatically driven  
MEMS resonator  
Power Supply Noise Rejection  
SiTime MEMS vs. Quartz Aging  
SiTIme  
NDK  
Epson  
Kyocera  
SiTime MEMS Oscillator  
Quartz Oscillator  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
10  
8
8.0  
SiTime  
2X Better  
6
4
2
0
3.5  
SiTime  
3X Better  
3.0  
1.5  
10  
100  
1,000  
10,000  
10-Year  
Power Supply Noise Frequency (kHz)  
1-Year  
Figure 4. Power Supply Noise Rejection[4]  
Figure 2. Aging Comparison[2]  
Silicon MEMS Outperforms Quartz Rev. 1.0  
www.sitime.com  
Silicon MEMS Outperforms Quartz  
The Smart Timing Choice  
Best Vibration Robustness  
Best Shock Robustness  
SiTime’s oscillators can withstand at least 50,000 g shock.  
They all maintain their electrical performance in operation  
during shock events. A comparison with quartz devices is  
shown in Figure 6.  
High-vibration environments are all around us. All electronics,  
from handheld devices to enterprise servers and storage  
systems are subject to vibration. Figure 5 shows a comparison  
of vibration robustness.  
Why is SiTime Best in Class:  
Why is SiTime Best in Class:  
• The moving mass of SiTime’s MEMS resonators is up to  
3000 times smaller than quartz  
• The moving mass of SiTime’s MEMS resonators is up to  
3000 times smaller than quartz  
• Center-anchored MEMS resonator is the most robust  
design  
• Center-anchored MEMS resonator is the most robust  
design  
VibrationSensitivityvs. Frequency  
Differential XO Shock Robustness - 500 g  
16  
SiTime TXC Epson Connor Winfield  
Kyocera SiLabs  
14.3  
100.00  
10.00  
1.00  
14  
12.6  
12  
10  
8
SiTime  
Up to 25x  
Better  
6
SiTime  
Up to 30x  
Better  
3.9  
4
2.9  
2.5  
2
0.6  
0.10  
0
10  
100  
VibrationFrequency(Hz)  
1000  
Kyocera Epson  
TXC  
CW  
SiLabs SiTime  
Figure 5. Vibration Robustness[5]  
Figure 6. Shock Robustness[6]  
Notes:  
1. Data Source: Reliability documents of named companies.  
2. Data source: SiTime and quartz oscillator devices datasheets.  
3. Test conditions for Electro Magnetic Susceptibility (EMS):  
• According to IEC EN61000-4.3 (Electromagnetic compatibility standard)  
• Field strength: 3V/m  
• Radiated signal modulation: AM 1 kHz at 80% depth  
• Carrier frequency scan: 80 MHz – 1 GHz in 1% steps  
• Antenna polarization: Vertical  
• DUT position: Center aligned to antenna  
Devices used in this test:  
SiTime, SiT9120AC-1D2-33E156.250000 - MEMS based - 156.25 MHz  
Epson, EG-2102CA 156.2500M-PHPAL3 - SAW based - 156.25 MHz  
TXC, BB-156.250MBE-T - 3rd Overtone quartz based - 156.25 MHz  
Kyocera, KC7050T156.250P30E00 - SAW based - 156.25 MHz  
Connor Winfield (CW), P123-156.25M - 3rd overtone quartz based - 156.25 MHz  
SiLabs, Si590AB-BDG - 3rd overtone quartz based - 156.25 MHz  
4. 50 mV pk-pk Sinusoidal voltage.  
Devices used in this test:  
SiTime, SiT8208AI-33-33E-25.000000, MEMS based - 25 MHz  
NDK, NZ2523SB-25.6M - quartz based - 25.6 MHz  
Kyocera, KC2016B25M0C1GE00 - quartz based - 25 MHz  
Epson, SG-310SCF-25M0-MB3 - quartz based - 25 MHz  
5. Devices used in this test: same as EMS test stated in Note 3.  
6. Test conditions for shock test:  
• MIL-STD-883F Method 2002  
• Condition A: half sine wave shock pulse, 500-g, 1ms  
• Continuous frequency measurement in 100 μs gate time for 10 seconds  
Devices used in this test: same as EMS test stated in Note 3  
7. Additional data, including setup and detailed results, is available upon request to qualified customers. Please contact productsupport@sitime.com.  
Silicon MEMS Outperforms Quartz Rev. 1.0  
www.sitime.com  
Document Feedback Form  
The Smart Timing Choice  
SiTime values your input in improving our documentation. Click here for our online feedback form or fill out and email the form  
below to productsupport@sitime.com.  
1. Does the Electrical Characteristics table provide complete information?  
If No, what parameters are missing?  
Yes  
No  
_________________________________________________________________________________________________  
2. Is the organization of this document easy to follow?  
If “No,” please suggest improvements that we can make:  
Yes  
No  
_________________________________________________________________________________________________  
3. Is there any application specific information that you would like to see in this document? (Check all that apply)  
EMI  
Termination recommendations  
Shock and vibration performance  
Other  
If “Other,” please specify:  
_________________________________________________________________________________________________  
4. Are there any errors in this document?  
If “Yes”, please specify (what and where):  
Yes  
No  
_________________________________________________________________________________________________  
5. Do you have additional recommendations for this document?  
_________________________________________________________________________________________________  
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Title  
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SIT8208AC-2F-33S-12.800000Y 相关器件

型号 制造商 描述 价格 文档
SIT8208AC-2F-33S-14.000000T ETC -20 TO 70C, 3225, 10PPM, 3.3V, 1 获取价格
SIT8208AC-2F-33S-14.000000X ETC -20 TO 70C, 3225, 10PPM, 3.3V, 1 获取价格
SIT8208AC-2F-33S-14.000000Y ETC -20 TO 70C, 3225, 10PPM, 3.3V, 1 获取价格
SIT8208AC-2F-33S-16.000000T ETC OSC MEMS 16.0000MHZ LVCMOS SMD 获取价格
SIT8208AC-2F-33S-16.000000X ETC -20 TO 70C, 3225, 10PPM, 3.3V, 1 获取价格
SIT8208AC-2F-33S-16.000000Y ETC OSC MEMS 16.0000MHZ LVCMOS SMD 获取价格
SIT8208AC-2F-33S-16.367667T ETC -20 TO 70C, 3225, 10PPM, 3.3V, 1 获取价格
SIT8208AC-2F-33S-16.367667X ETC -20 TO 70C, 3225, 10PPM, 3.3V, 1 获取价格
SIT8208AC-2F-33S-16.367667Y ETC -20 TO 70C, 3225, 10PPM, 3.3V, 1 获取价格
SIT8208AC-2F-33S-16.368000T ETC -20 TO 70C, 3225, 10PPM, 3.3V, 1 获取价格

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