SIT9120AC-1B1-25E155.520000E [ETC]
-20 TO 70C, 3225, 20PPM, 2.5V, 1;
| 型号： | SIT9120AC-1B1-25E155.520000E |
| 厂家： | 
ETC |
| 描述： | -20 TO 70C, 3225, 20PPM, 2.5V, 1 |
| 文件： | 总13页 (文件大小：1141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SiT9120
Standard Frequency Differential Oscillator
Features
Applications
31 standard frequencies from 25 MHz to 212.5 MHz
LVPECL and LVDS output signaling types
0.6 ps RMS phase jitter (random) over 12 kHz
to 20 MHz bandwidth
10GB Ethernet, SONET, SATA, SAS, Fibre Channel,
PCI-Express
Telecom, networking, instrumentation, storage, server
Frequency stability as low as ±10 ppm
Industrial and extended commercial temperature ranges
Industry-standard packages: 3.2 x 2.5, 5.0 x 3.2 and
7.0 x 5.0 mm x mm
For any other frequencies between 1 to 625 MHz,
refer to SiT9121 and SiT9122 datasheet
Electrical Characteristics
Table 1. Electrical Characteristics
Parameters
Symbol
Min.
Typ.
Max.
Unit
Condition
LVPECL and LVDS, Common Electrical Characteristics
Supply Voltage
Vdd
2.97
2.25
2.25
25
3.3
2.5
–
3.63
2.75
3.63
212.5
+10
+20
+25
+50
+2
V
V
V
Termination schemes in Figures 1 and 2 - XX ordering code
See list of standard frequencies
Output Frequency Range
FrequencyStability
f
–
MHz
ppm
ppm
ppm
ppm
ppm
ppm
°C
F_stab
-10
-20
-25
-50
-2
–
Inclusive of initial tolerance, operating temperature,
rated power supply voltage, and load variations
–
–
–
First Year Aging
F_aging1
F_aging10
T_use
–
25°C
10-year Aging
–
+5
25°C
-5
Operating TemperatureRange
–
+85
+70
–
Industrial
-40
-20
70%
–
°C
Extended Commercial
Input Voltage High
VIH
VIL
–
Vdd
ST
ST
Pin 1, OE or
Pin 1, OE or
Input Voltage Low
–
100
–
30%
250
–
Vdd
kΩ
–
–
2
–
–
Input Pull-up Impedance
Z_in
ST
Pin 1, OE logic high or logic low, or
ST
logic high
MΩ
ms
Pin 1,
logic low
Start-up Time
Resume Time
T_start
6
10
Measured from the time Vdd reaches its rated minimum value.
T_resume
6
10
ms
ST
In Standby mode, measured from the time
50% threshold.
pin crosses
Duty Cycle
DC
–
55
%
Contact SiTime for tighter dutycycle
45
LVPECL, DC and AC Characteristics
Current Consumption
Idd
I_OE
I_leak
I_std
–
–
–
–
61
–
69
35
1
mA
mA
A
Excluding Load Termination Current, Vdd = 3.3V or 2.5V
OE Disable Supply Current
Output Disable Leakage Current
Standby Current
OE = Low
OE = Low
–
–
100
A
ST
= Low, for all Vdds
Maximum Output Current
Output High Voltage
Output Low Voltage
I_driver
VOH
Maximum average current drawn from OUT+ orOUT-
See Figure 1(a)
–
–
–
30
Vdd-0.7
Vdd-1.5
2.0
mA
V
Vdd-1.1
VOL
Vdd-1.9
–
V
See Figure 1(a)
OutputDifferentialVoltageSwing
Rise/Fall Time
V_Swing
Tr, Tf
1.2
–
1.6
300
–
V
See Figure 1(b)
500
ps
ns
ps
ps
ps
ps
20% to 80%, see Figure 1(a)
OE Enable/Disable Time
RMS Period Jitter
T_oe
–
115
f = 212.5 MHz - For other frequencies, T_oe = 100ns + 3 period
f = 100 MHz, VDD = 3.3V or 2.5V
f = 156.25 MHz, VDD = 3.3V or 2.5V
f = 212.5 MHz, VDD = 3.3V or 2.5V
f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz, all Vdds
T_jitt
–
1.2
1.2
1.2
0.6
1.7
–
1.7
–
1.7
RMS Phase Jitter (random)
T_phj
–
0.85
Rev 1.08
June 25, 2019
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SiT9120 Standard Frequency Differential Oscillator
Table 1. Electrical Characteristics (continued)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
LVDS, DC and AC Characteristics
Current Consumption
Idd
Excluding Load Termination Current, Vdd = 3.3V or 2.5V
–
–
47
–
55
35
450
1
mA
mA
mV
A
OE Disable Supply Current
Differential Output Voltage
Output Disable Leakage Current
I_OE
VOD
I_leak
I_std
OE = Low
See Figure 2
OE = Low
250
–
350
–
Standby Current
–
–
100
A
mV
V
ST
= Low, for all Vdds
VOD Magnitude Change
Offset Voltage
–
–
1.2
–
50
1.375
50
See Figure 2
VOD
VOS
1.125
See Figure 2
VOS Magnitude Change
Rise/Fall Time
–
–
–
mV
ps
See Figure 2
VOS
Tr, Tf
T_oe
495
–
600
115
20% to 80%, see Figure 2
OE Enable/Disable Time
f = 212.5 MHz - For other frequencies,
T_oe = 100ns + 3 period
ns
RMS Period Jitter
T_jitt
–
–
–
–
1.2
1.2
1.2
0.6
1.7
1.7
ps
ps
ps
ps
f = 100 MHz, VDD = 3.3V or 2.5V
f = 156.25 MHz, VDD = 3.3V or 2.5V
f = 212.5 MHz, VDD = 3.3V or 2.5V
1.7
RMS Phase Jitter (random)
T_phj
0.85
f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz, all
Vdds
Table 2. Pin Description
Pin
Map
Functionality
Top View
NoConnect; Leaveitfloatingorconnect toGND
forbetter heat dissipation
NC
NA
Input
Input
NA
NC/OE/ST
NC
1
2
3
6 VDD
H or Open: specified frequencyoutput
L: output is high impedance
OE
1
H or Open: specified frequencyoutput
L: Device goes to sleep mode. Supply current reduces to I_std.
5
OUT-
ST
NC
NoConnect; Leaveitfloatingorconnect toGND for better heat
dissipation
2
4
GND
OUT+
3
4
5
6
GND
OUT+
OUT-
VDD
Power
Output
Output
Power
VDD Power Supply Ground
Oscillator output
Figure 1. Pin Assignments
Complementary oscillatoroutput
Power supply voltage
Rev 1.08
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SiT9120 Standard Frequency Differential Oscillator
Table 3. Absolute Maximum Limits
Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part.
Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter
Min.
-65
-0.5
–
Max.
150
4
Unit
°C
V
StorageTemperature
VDD
ElectrostaticDischarge (HBM)
2000
260
V
Soldering Temperature (follow standard Pb free soldering guidelines)
–
°C
Table 4. Thermal Consideration[1]
Package
JA, 4 Layer Board (°C/W)
JC, Bottom (°C/W)
7050, 6-pin
5032, 6-pin
3225, 6-pin
142
97
27
20
20
109
Note:
1. Refer to JESD51-7 for JA and JC definitions, and reference layout used to determine the JA and JC values in the above table.
Table 5. Maximum Operating JunctionTemperature[2]
Max Operating Temperature(ambient)
Maximum Operating JunctionTemperature
70°C
85°C
90°C
105°C
Note:
2. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature.
Table 6. EnvironmentalCompliance
Parameter
Condition/TestMethod
MIL-STD-883F, Method2002
Mechanical Shock
Mechanical Vibration
TemperatureCycle
Solderability
MIL-STD-883F, Method2007
JESD22, Method A104
MIL-STD-883F, Method2003
MSL1 @ 260°C
Moisture SensitivityLevel
Rev 1.08
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SiT9120 Standard Frequency Differential Oscillator
Waveform Diagrams
OUT-
80%
80%
20%
20%
VOH
OUT+
VOL
Tr
Tf
GND
Figure 1(a). LVPECL Voltage Levels per Differential Pin (OUT+/OUT-)
V_ Swing
0 V
t
Figure 1(b). LVPECL Voltage Levels Across DifferentialPair
OUT-
80%
80%
VOD
20%
20%
OUT+
GND
VOS
Tr
Tf
Figure 2. LVDS Voltage Levels per Differential Pin (OUT+/OUT-)
Rev 1.08
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SiT9120 Standard Frequency Differential Oscillator
Termination Diagrams
LVPECL
VDD
OUT+
Z0 = 50
D+
Receiver Device
LVPECL Driver
OUT-
Z0 = 50
D-
50
50
VTT = VDD – 2.0 V
Figure 3. LVPECL Typical Termination
VDD= 3.3V => R1 = 100 to 150
VDD= 2.5V => R1 = 75
VDD
100 nF
OUT+
Z0 = 50
D+
Receiver Device
D-
LVPECL Driver
100 nF
Z0 = 50
OUT-
R1
R1
50
50
VTT
Figure 4. LVPECL AC Coupled Termination
VDD = 3.3V => R1 = R3 = 133 and
R2 = R4 = 82
VDD
R1
VDD = 2.5V => R1 = R3 = 250 and
R2 = R4 = 62.5
R3
VDD
OUT+
LVPECL Driver
OUT-
Z0 = 50
Z0 = 50
D+
Receiver Device
D-
R2
R4
Figure 5. LVPECL with Thevenin Typical Termination
Rev 1.08
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SiT9120 Standard Frequency Differential Oscillator
Termination Diagrams (continued)
LVDS
VDD
OUT+
OUT-
Z0 = 50
D+
100
Receiver Device
LVDS Driver
Z0 = 50
D-
Figure 6. LVDS Single Termination (LoadTerminated)
Rev 1.08
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SiT9120 Standard Frequency Differential Oscillator
Dimensions and Patterns
Package Size – Dimensions (Unit: mm)[3]
3.2 x 2.5 x 0.75 mm
Recommended Land Pattern (Unit: mm)[4]
2.25
3.2±0.05
2.20
#6
#5
#4
#4
#5
#6
YXXXX
#1
#2
#3
#3
#2
#1
0.6
0.65
1.05
0.75±0.05
5.0 x 3.2 x 0.75 mm
2.54
#5
5.0±0.10
#6
#5
#4
#4
#6
YXXXX
0.90
#1
#2
#3
#3
#2
#1
0.64
0.75±0.05
7.0 x 5.0x 0.90 mm
7.0±0.10
5.08
5.08
#6
#5
#4
#4
#5
#6
YXXXX
#3
#2
#1
#1
#2
#3
1.40
1.60
Notes:
3. Top Marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of
the device.
4. A capacitor of value 0.1 F between Vdd and GND is recommended.
Rev 1.08
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SiT9120 Standard Frequency Differential Oscillator
Ordering Information
SiT9120AC-1C2-33E125.000000T
Packaging:
Part Family
“T”, “Y”, “X”, “D”, “E”, or “G”
Refer to table below for
packing method
“SiT9120”
Leave Blank for Bulk
Revision Letter
Frequency
“A” is the revision of Silicon
See Supported Frequency list
below
Temperature Range
Feature Pin
“I” Industrial, -40 to 85°C
“N” for No Connect
“E” for Output Enable
“S” for Standby
“C” Extended Commercial, -20 to 70°C
Signalling Type
Voltage Supply
“1” = LVPECL
“2” = LVDS
“25” for 2.5V ±10%
“33” for 3.3V ±10%
“XX” for 2.25V to 3.63V
Package Size
“B” 3.2 x 2.5 mm x mm
“C” 5.0 x 3.2 mm x mm
“D” 7.0 x 5.0 mm x mm
Frequency Stability
“F” for ±10 ppm
“1” for ±20 ppm
“2” for ±25 ppm
“3” for ±50 ppm
Table 7. List of Supported Frequencies
25.000000 MHz
50.000000 MHz
74.175824 MHz
74.250000 MHz
75.000000 MHz
98.304000 MHz
100.000000 MHz 106.250000 MHz
125.000000 MHz 133.000000 MHz 133.300000 MHz 133.330000 MHz 133.333000 MHz 133.333300 MHz 133.333330 MHz 133.333333 MHz
148.351648 MHz 148.500000 MHz 150.000000 MHz 155.520000 MHz 156.250000 MHz 161.132800 MHz 166.000000 MHz 166.600000 MHz
166.660000 MHz 166.666000 MHz 166.666600 MHz 166.666660 MHz 166.666666 MHz 200.000000 MHz 212.500000 MHz
Table 8. Ordering Codes for Supported Tape & Reel PackingMethod
12 mm T&R
(3ku)
12 mm T&R
(250u)
16 mm T&R
(3ku)
16 mm T&R
(1ku)
16 mm T&R
(250u)
8 mm T&R
(3ku)
8 mm T&R
(1ku)
8 mm T&R
(250u)
12 mm T&R
(1ku)
Device Size
7.0 x 5.0 mm
5.0 x 3.2 mm
3.2 x 2.5 mm
–
–
–
–
E
–
–
–
T
T
–
Y
Y
–
X
X
T
–
–
Y
–
–
X
–
–
D
G
Rev 1.08
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SiT9120 Standard Frequency Differential Oscillator
Table 9. Revision History
Revisions
1.01
Release Date
02/20/2013
11/23/2013
02/06/2014
03/03/2014
07/23/2014
10/03/2014
01/09/2017
Change Summary
Original
1.02
Added input specifications, LVPECL/LVDS waveforms, packaging T&R options
Added 8mm T&R option
1.03
1.04
Added ±10 ppm
1.05
Include Thermal Consideration Table
Modified Thermal Consideration values
1.06
1.07
Included Maximum Operating Junction Temperature Table
Added Thermal Consideration Notes to Table
Updated logo and company address, other page layout changes
1.08
06/25/2019
Added No Connect feature to Pin 1
SiTime Corporation, 5451 Patrick Henry Drive, Santa Clara, CA 95054, USA | Phone: +1-408-328-4400 | Fax: +1-408-328-4439
© SiTime Corporation 2013-2019. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage
or defect of a Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect
or accident, (iii) unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or
(iv) improper installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress.
Disclaimer: SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by
operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or
usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any SiTime product and any product documentation. Products sold by
SiTime are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved
or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below.
CRITICAL USE EXCLUSION POLICY
BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR
FACILITIES OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE.
SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products does
not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the sale
of products or services by SiTime. Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be strictly
prohibited.
Rev 1.08
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Silicon MEMS Outperforms Quartz
Supplemental Information
The Supplemental Information section is not part of the datasheet and is for informational purposes only.
Rev 1.08
Page 10 of 13
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Silicon MEMS Outperforms Quartz
Best Reliability
Best Electro Magnetic Susceptibility (EMS)
Silicon is inherently more reliable than quartz. Unlike quartz
suppliers, SiTime has in-house MEMS and analog CMOS
expertise, which allows SiTime to develop the most reliable
products. Figure 1 shows a comparison with quartz
technology.
SiTime’s oscillators in plastic packages are up to 54 times
more immune to external electromagnetic fields than quartz
oscillators as shown in Figure3.
Why is SiTime Best in Class:
Internal differential architecture for best common
mode noise rejection
Electrostatically driven MEMS resonator is more
immune to EMS
Why is SiTime Best in Class:
SiTime’s MEMS resonators are vacuum sealed
using an advanced EpiSeal™ process, which
eliminates foreign particles and improves long
term aging and reliability
World-class MEMS and CMOS designexpertise
Reliability (Million Hours)
SiTime
1,140
38
IDT
KYCA
EPSN
TXC
CW
SLAB
SiTime
28
EPSN
Figure 3. Electro Magnetic Susceptibility (EMS)[3]
Best Power Supply Noise Rejection
Figure 1. Reliability Comparison[1]
SiTime’s MEMS oscillators are more resilient against noise
on the power supply. A comparison is shown in Figure4.
Best Aging
Why is SiTime Best in Class:
Unlike quartz, MEMS oscillators have excellent long
term aging performance which is why every new SiTime
product specifies 10-year aging. A comparison is shown
in Figure 2.
On-chip regulators and internal differential
architecture for common mode noise rejection
MEMS resonator is paired with advanced analog
CMOS IC
Why is SiTime Best in Class:
SiTime’s MEMS resonators are vacuum sealed
using an advanced EpiSeal™ process, which
eliminates foreign particles and improves long term
aging and reliability
SiTime
EPSN
KYCA
Inherently better immunity of electrostatically driven
MEMS resonator
MEMS vs. Quartz Aging
EpiSeal MEMS Oscillato
SiTime Oscillator
Quatz Oscillato
Quartz Oscillator
10
8
8
6
4
2
0
Figure 4. Power Supply Noise Rejection[4]
3.5
3
1.5
1-Year
10-Year
Figure 2. Aging Comparison[2]
Rev 1.08
Page 11 of 13
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Silicon MEMS Outperforms Quartz
Best Vibration Robustness
Best Shock Robustness
High-vibration environments are all around us. All
electronics, from handheld devices to enterprise servers
and storage systems are subject to vibration. Figure 5
shows a comparison of vibration robustness.
SiTime’s oscillators can withstand at least 50,000 g shock.
They all maintain their electrical performance in operation
during shock events. A comparison with quartz devices is
shown in Figure 6.
Why is SiTime Best in Class:
Why is SiTime Best in Class:
The moving mass of SiTime’s MEMS resonators is
up to 3000 times smaller than quartz
Center-anchored MEMS resonator is the most
robust design
The moving mass of SiTime’s MEMS resonators is
up to 3000 times smaller than quartz
Center-anchored MEMS resonator is the most
robust design
KYCA
TX
C
E
E
PS
C
S
L
AB
SiTime
100.0
10.0
1.0
0.1
0.0
10
100
1000
Vibration Frequency (Hz)
KYCA
EPSN
TXC
CW
SLAB
SiTime
Figure 5. Vibration Robustness[5]
Figure 6. Shock Robustness[6]
Figure labels:
.
.
.
.
.
.
TXC = TXC
Epson = EPSN
Connor Winfield = CW
Kyocera = KYCA
SiLabs = SLAB
SiTime = EpiSeal MEMS
Rev 1.08
Page 12 of 13
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Silicon MEMS Outperforms Quartz
Notes:
1. Data source: Reliability documents of named companies.
2. Data source: SiTime and quartz oscillator devices datasheets.
3. Test conditions for Electro Magnetic Susceptibility (EMS):
.
.
.
.
.
.
According to IEC EN61000-4.3 (Electromagnetic compatibility standard)
Field strength: 3V/m
Radiated signal modulation: AM 1 kHz at 80% depth
Carrier frequency scan: 80 MHz – 1 GHz in 1% steps
Antenna polarization: Vertical
DUT position: Center aligned to antenna
Devices used in this test:
Label
Manufacturer
SiTime
Part Number
Technology
EpiSeal MEMS
EPSN
TXC
SiT9120AC-1D2-33E156.250000
EG-2102CA156.2500M-PHPAL3
BB-156.250MBE-T
MEMS + PLL
Epson
Quartz, SAW
TXC
Quartz, 3rd Overtone
Quartz, 3rd Overtone
Quartz, SAW
CW
Conner Winfield
AVX Kyocera
SiLab
P123-156.25M
KYCA
KC7050T156.250P30E00
590AB-BDG
SLAB
Quartz, 3rd Overtone + PLL
4. 50 mV pk-pk Sinusoidal voltage.
Devices used in this test:
Label
Manufacturer
SiTime
Part Number
Technology
MEMS + PLL
Quartz
EpiSeal MEMS
SiT8208AI-33-33E-25.000000
NZ2523SB-25.6M
NDK
NDK
KYCA
AVX Kyocera
Epson
KC2016B25M0C1GE00
SG-310SCF-25M0-MB3
Quartz
EPSN
Quartz
5. Devices used in this test:
same as EMS test stated in Note 3.
6. Test conditions for shock test:
.
.
.
MIL-STD-883F Method 2002
Condition A: half sine wave shock pulse, 500-g, 1ms
Continuous frequency measurement in 100 μs gate time for 10 seconds
Devices used in this test:
same as EMS test stated in Note 3.
7. Additional data, including setup and detailed results, is available upon request to qualified customer. Please contact productsupport@sitime.com.
Rev 1.08
Page 13 of 13
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