SM5103 [ETC]
HIGH SENSITIVITY, LOW-PRESSURE SILICON DIE; 灵敏度高，低压硅芯片
| 型号： | SM5103 |
| 厂家： | 
ETC |
| 描述： | HIGH SENSITIVITY, LOW-PRESSURE SILICON DIE |
| 文件： | 总2页 (文件大小：334K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SM5103
SILICON
Low-Pressure Die
MICROSTRUCTURES
I N C O R P O R A T E D
• HIGH SENSITIVITY, LOW-PRESSURE SILICON DIE
DESCRIPTION
The SM5103 is a silicon micro-machined,
piezoresistive low pressure sensing chip.
These devices are available in full-scale
ranges from 0.3 to 3.0 psi and are ideal for
OEM and high volume applications.
Provided in die form, these sensors can be
mounted on ceramic or PC board substrates
as part of an OEM system. They also may
be packaged into proprietary or application-
specified sensor lines.
FEATURES
Die are probed, inked and diced, and
shipped on tape.
•
•
•
Low Pressure (from 0-0.3 to 0-3.0 PSI)
High Performance at Low Pressures
Custom pressure ranges available in high-
volume applications.
Constant Current or Constant Voltage
Drive
•
High Volume, Low Cost
•
High Millivolt Output
APPLICATIONS
•
•
•
•
•
Air Flow
Level Detection
HVAC
Instrumentation
Gas Analysis
Rev 1.2 8_02
2001-2002
Silicon Microstructures, Inc. ♦ 1701 McCarthy Blvd. ♦ Milpitas, CA 95035 USA
Tel: 408-577-0100 ♦ Fax: 408-577-0123 ♦ Sales@Si-Micro.Com ♦ WWW.Si-Micro.Com
SM5103
CHARACTERISTICS FOR SM5103 - SPECIFICATIONS
All parameters are measured at 5.000V supply at room temperature, unless otherwise specified.
Min.
Typ.
Max.
Units
Notes
Excitation Voltage
Excitation Current
Span (FS Range)
0
0
5.0
1.5
10.0
3.0
V
1
1
2
mA
0.3 PSI
0.8 PSI
1.5 PSI
3.0 PSI
25
25
50
50
75
75
mV
mV
25
50
75
mV
25
50
75
mV
Offset
-75
-24
-7
0
25
mV
TC Span
-19
-1
-15.5
+7
%FS/100°C
%FS/100°C
%/100°C
%FS
3
3
TC Offset
TC Resistance
Linearity
24
27.5
+0.1
3.3
33
-0.3
2.7
10X
15X
-40
-55
0.3
4.0
4
Bridge Impedance
Proof Pressure
Burst Pressure
kΩ
Rated FS
Rated FS
°C
5
Operating Temperature
125
150
Storage Temperature
°C
Notes:
1. Bridge may be driven with positive or negative excitation as long as Vsub is not connected. SMI does recommend connecting
the Vsub to the highest voltage in the bridge for added offset stability.
2. Measured at 5V constant voltage excitation.
3. Measured from 0 to 70 C
4. Defined as best straight line; 0.3 PSI linearity is + 0.5% FS (max).
5. Burst Pressure is the pressure where the part can survive the overpressure but may degrade over repeated cycles.
0.5
1.0
1.0
0.5
mm
mm
mm
mm
+Vexc1
Vsub
Sig-
3.15
mm
3.4
mm
Positive output for pressure
applied to the top (circuit) side of
the sensor
Die dimensions in mm
Pressure Ranges
PSI 5103
0.3 003
ORDERING INFORMATION:
Sig+
Sig-
Model Number
0.8 008
-Vexc
+Vexc
0.5 mm
-Vexc1
0.375 mm 0.375 mm
1.5 015
+Vexc1
SM5103 - 003 - G
3.0 030
SM5103 Die (3.4X3.2 mm as sawn)
Gage only.
Custom ranges available
in high volumes
Covered under USA Mask-Copyright
Pressure
range
Pressure
Type
See separate Application Notes for typical range of variation in Saw
dimensions.
Notice:
Silicon Microstructures, Inc. reserves the right to make changes to the product contained in this publication. Silicon Microstructures, Inc. assumes no responsibility for the use of any
circuits described herein, conveys no license under any patent or other right, and makes no representation that the circuits are free of patent infringement. While the information in this
publication has been checked, no responsibility, however, is assumed for inaccuracies.
Silicon Microstructures, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to
cause failure of a life-support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications.
Rev 1.2 8_02
2001-2002
Silicon Microstructures, Inc. ♦ 1701 McCarthy Blvd. ♦ Milpitas, CA 95035 USA
Tel: 408-577-0100 ♦ Fax: 408-577-0123 ♦ Sales@Si-Micro.Com ♦ WWW.Si-Micro.Com
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