SS22-S100 [ETC]

(29.89 k) ;
SS22-S100
型号: SS22-S100
厂家: ETC    ETC
描述:

(29.89 k)

文件: 总2页 (文件大小:32K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
WTE  
PO WER SEM ICONDUCTORS  
SS12 – S100  
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER  
Features  
!
Schottky Barrier Chip  
!
!
!
!
!
!
Ideally Suited for Automatic Assembly  
Low Power Loss, High Efficiency  
Surge Overload Rating to 30A Peak  
For Use in Low Voltage Application  
Guard Ring Die Construction  
B
D
A
F
Plastic Case Material has UL Flammability  
Classification Rating 94V-O  
C
H
G
E
SMA/DO-214AC  
Min  
Mechanical Data  
Dim  
A
Max  
2.90  
4.60  
1.60  
0.305  
5.28  
2.44  
0.203  
1.52  
!
!
Case: Low Profile Molded Plastic  
Terminals: Solder Plated, Solderable  
per MIL-STD-750, Method 2026  
Polarity: Cathode Band or Cathode Notch  
Marking: Type Number  
2.50  
B
4.00  
C
1.40  
!
!
!
D
0.152  
4.80  
E
Weight: 0.064 grams (approx.)  
F
2.00  
G
H
0.051  
0.76  
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Characteristic  
Symbol SS12 SS13 SS14 SS15 SS16 SS18 SS19 S100 Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
20  
14  
30  
21  
40  
28  
50  
35  
60  
42  
80  
56  
90  
64  
100  
71  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
V
A
Average Rectified Output Current @TL = 75°C  
1.0  
30  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
A
Forward Voltage  
@IF = 1.0A  
VFM  
IRM  
0.55  
0.70  
0.85  
V
Peak Reverse Current  
At Rated DC Blocking Voltage @TA = 100°C  
@TA = 25°C  
0.5  
20  
µA  
Typical Thermal Resistance Junction to Ambient  
(Note 1)  
RJA  
88  
K/W  
Operating Temperature Range  
Storage Temperature Range  
Tj  
-65 to +125  
-65 to +150  
°C  
°C  
TSTG  
Note: 1. Mounted on P.C. Board with 5.0mm2 copper pad areas  
SS12 – S100  
14-1  
© 1999 Won-Top Electronics  
10  
1.0  
SS15 - SS16  
SS12 - SS14  
1.0  
SS18 - S100  
0.5  
0.1  
Tj - 25ºC  
IF Pulse Width = 300 µs  
0
0.01  
25  
50  
75  
100  
125  
150  
0
0.4  
0.8  
1.2  
TL, LEAD TEMPERATURE (ºC)  
VF, INSTANTANEOUS FWD VOLTAGE (V)  
Fig. 2 Typ. Forward Characteristics  
Fig. 1 Forward Current Derating Curve  
40  
30  
1000  
Tj = 25°C  
f = 1 MHz  
Single Half Sine-Wave  
(JEDEC Method)  
100  
20  
10  
0
Tj = 150ºC  
10  
1
100  
10  
0.1  
1
10  
100  
NUMBER OF CYCLES AT 60 Hz  
VR, REVERSE VOLTAGE (V)  
Fig. 4 Typical Junction Capacitance  
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current  
100  
10  
Tj = 100ºC  
1.0  
Tj = 75ºC  
0.1  
0.01  
Tj = 25ºC  
0.001  
60  
100 120  
0
80  
140  
40  
20  
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)  
Fig. 5 Typical Reverse Characteristics  
SS12 S100  
14-2  
© 1999 Won-Top Electronics  

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