SS22-S100 [ETC]
(29.89 k) ;型号: | SS22-S100 |
厂家: | ETC |
描述: | (29.89 k) |
文件: | 总2页 (文件大小:32K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
WTE
PO WER SEM ICONDUCTORS
SS12 – S100
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Features
!
Schottky Barrier Chip
!
!
!
!
!
!
Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
Surge Overload Rating to 30A Peak
For Use in Low Voltage Application
Guard Ring Die Construction
B
D
A
F
Plastic Case Material has UL Flammability
Classification Rating 94V-O
C
H
G
E
SMA/DO-214AC
Min
Mechanical Data
Dim
A
Max
2.90
4.60
1.60
0.305
5.28
2.44
0.203
1.52
!
!
Case: Low Profile Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
2.50
B
4.00
C
1.40
!
!
!
D
0.152
4.80
E
Weight: 0.064 grams (approx.)
F
2.00
G
H
0.051
0.76
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Characteristic
Symbol SS12 SS13 SS14 SS15 SS16 SS18 SS19 S100 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20
14
30
21
40
28
50
35
60
42
80
56
90
64
100
71
V
RMS Reverse Voltage
VR(RMS)
IO
V
A
Average Rectified Output Current @TL = 75°C
1.0
30
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
A
Forward Voltage
@IF = 1.0A
VFM
IRM
0.55
0.70
0.85
V
Peak Reverse Current
At Rated DC Blocking Voltage @TA = 100°C
@TA = 25°C
0.5
20
µA
Typical Thermal Resistance Junction to Ambient
(Note 1)
RꢀJA
88
K/W
Operating Temperature Range
Storage Temperature Range
Tj
-65 to +125
-65 to +150
°C
°C
TSTG
Note: 1. Mounted on P.C. Board with 5.0mm2 copper pad areas
SS12 – S100
14-1
© 1999 Won-Top Electronics
10
1.0
SS15 - SS16
SS12 - SS14
1.0
SS18 - S100
0.5
0.1
Tj - 25ºC
IF Pulse Width = 300 µs
0
0.01
25
50
75
100
125
150
0
0.4
0.8
1.2
TL, LEAD TEMPERATURE (ºC)
VF, INSTANTANEOUS FWD VOLTAGE (V)
Fig. 2 Typ. Forward Characteristics
Fig. 1 Forward Current Derating Curve
40
30
1000
Tj = 25°C
f = 1 MHz
Single Half Sine-Wave
(JEDEC Method)
100
20
10
0
Tj = 150ºC
10
1
100
10
0.1
1
10
100
NUMBER OF CYCLES AT 60 Hz
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
100
10
Tj = 100ºC
1.0
Tj = 75ºC
0.1
0.01
Tj = 25ºC
0.001
60
100 120
0
80
140
40
20
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
SS12 – S100
14-2
© 1999 Won-Top Electronics
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