SSH4N90 [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 4A I(D) | TO-247VAR ; 晶体管| MOSFET | N沟道| 900V V( BR ) DSS | 4A I( D) | TO- 247VAR\n
SSH4N90
型号: SSH4N90
厂家: ETC    ETC
描述:

TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 4A I(D) | TO-247VAR
晶体管| MOSFET | N沟道| 900V V( BR ) DSS | 4A I( D) | TO- 247VAR\n

晶体 晶体管 局域网
文件: 总5页 (文件大小:271K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

SSH4N90AS

Power Field-Effect Transistor, 4.5A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
FAIRCHILD

SSH5N80A

Advanced Power MOSFET
FAIRCHILD

SSH5N90

N-CHANNEL POWER MOSFETS
SAMSUNG

SSH5N90A

ADVANCED POWER MOSFET
SAMSUNG

SSH60N06

Power Field-Effect Transistor, 60A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
SAMSUNG

SSH60N06A

Power Field-Effect Transistor, 60A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
SAMSUNG

SSH60N08

Power Field-Effect Transistor, 60A I(D), 80V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
SAMSUNG

SSH60N10

Power Field-Effect Transistor, 60A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
SAMSUNG

SSH60N10A

Power Field-Effect Transistor, 60A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
SAMSUNG

SSH66TU

Short Switch for internal or external mounting via 1/2NPT thread
CYNERGY3

SSH66TU12N100S

Short Switch for internal or external mounting via 1/2NPT thread
CYNERGY3

SSH66XE

Switch for 3/4 NPT External Fitting
CYNERGY3