ST2600C28R0 [ETC]

2800V 2220A Phase Control SCR in a A-36 (R-Puk) package ; 2220A 2800V相位控制可控硅的A- 36 （ R- PUK）封装\n


型号：	ST2600C28R0
厂家：	ETC
描述：	2800V 2220A Phase Control SCR in a A-36 (R-Puk) package 2220A 2800V相位控制可控硅的A- 36 （ R- PUK）封装\n 可控硅
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中文：	中文翻译
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Bulletin I25199 rev. B 02/00

ST2600C..R SERIES

PHASE CONTROL THYRISTORS

Hockey Puk Version

Features

2630A

Double side cooling

High surge capability

High mean current

Fatigue free

TypicalApplications

DC motor controls

Controlled DC power supplies

AC controllers

(R-PUK)

Major Ratings and Characteristics

Parameters

I_T(AV)

ST2600C..R

Units

2220

°C

@ T_C

I_T(AV)

2630

@ T

°C

I_T(RMS)

4800

@ T

°C

I_TSM

@ 50Hz

@ 60Hz

46000

48200

I²t

@ 50Hz

@ 60Hz

10580

KA²s

9640

2000 to 3000

400

KA²s

V_DRM/V_RRM

typical

max.

µs

T_J

125

°C

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ST2600C..R Series

Bulletin I25199 rev. B 02/00

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Voltage

Code

V_DRM/V_RRM, max. repetitive

V_RSM, maximum non-

I_DRM/I_RRMmax.

Type number

ST2600C..R

peak and off-state voltage

repetitive peak voltage

@ T = 125°C

^CmA

2000

2200

2400

2600

2800

3000

2100

2300

2500

2700

2900

3100

250

On-state Conduction

Parameter

ST2600C..R

Units Conditions

I_T(AV)Max. average on-state current

@ Case temperature

2220 (1440)

°C

180° conduction, half sine wave

I_T(AV)Max. average on-state current

@ Heatsink temperature

2630 (1160)

55 (85)

°C

double side (single side [anode side]) cooled

I_T(RMS)Max. RMS on-state current

4800

DC @ 25°C heatsink temperature double side cooled

46000

48200

36800

38500

10580

9640

I_TSM

Max. peak, one-cycle

t = 10ms

t = 8.3ms

t = 10ms

t = 8.3ms

t = 10ms

t = 8.3ms

t = 10ms

t = 8.3ms

T_J= T_Jmax.

No voltage

reapplied

50% V_RRM

reapplied

No voltage

reapplied

50% V_RRM

reapplied

non-repetitive surge current

Sinusoidal half wave,

I²t

Maximum I²t for fusing

Initial T_C= 125°C

KA²s

6770

6150

V_T(TO)Max. value of threshold voltage

0.89

r_t

Max. value of on-state slope

resistance

mΩ

0.19

T_J= T_Jmax.

V_TM

I_L

Max. on-state voltage

1.45

I = 2900A, T_C= 25°C

Max. (typical) latching current

300 (100)

T_J= 25°C, V_D= 5V

Switching

Parameter

ST2600C..R

150 (300)

Units Conditions

di/dt

Max. repetitive 50Hz (no repetitive)

rate of rise of turned-on current

From 67% V_DRMgate drive 20V, 20Ω, t = 1µs

A/µs

T_J= T_Jmax.

Gate drive 30V, 15Ω, V = 67% V_DRM, T_J= 25°C

Maximum delay time

Typical turn-off time

2.0

Rise time 0.5µs

µs

I_T= 800A, t = 1ms, T_J= T_Jmax, V_RM= 50V,

400

dI_RR/dt = 20A/µs, V_DR=67% V_DRM, dV/dt = 20V/µs linear

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ST2600C..R Series

Bulletin I25199 rev. B 02/00

Blocking

Parameter

ST2600C..R

500

Units Conditions

V/µs T_J= T_Jmax. to 67% rated V_DRM

dv/dt Maximum linear rate of rise of

off-state voltage

I_RRM

I_DRM

Max. peak reverse and off-state

leakage current

250

T_J= 125°C rated V_DRM/V_RRMapplied

Triggering

Parameter

Maximum peak gate power

P_G(AV)Maximum average gate power

ST2600C..R

Units Conditions

= 100µs

P_GM

150

I_GM

Max. peak positive gate current

Max. peak positive gate voltage

Max. peak negative gate voltage

Anode positive with respect to cathode

Anode negative with respect to cathode

V_GM

-V_GM

I_GT

0.25

Maximum DC gate current

required to trigger

400

T_C= 25°C, V_DRM= 5V

V_GT

Maximum gate voltage required

to trigger

T_C= 25°C, V_DRM= 5V

Max. gate current/voltage not to

trigger is the max. value which

will not trigger any unit with rated

V_DRManode-to-cathode applied

V_GD

DC gate voltage not to trigger

0.25

T_C= 125°C

Thermal and Mechanical Specification

Parameter

ST2600C..R

Units Conditions

On-state (conducting)

T_Jmax. Max. operating temperature

125

°C

Max. storage temperature range

-55 to 125

stg

R_thJ-CThermal resistance, junction

to case

0.019

DC operation single side cooled

DC operation double side cooled

K/W

0.0095

R_th(C-h)Thermal resistance, case

to heatsink

0.004

0.002

Singlesidecooled

Double side cooled

Clamping force 43KN with

mounting compound

43000

(4400)

Mounting force 10%

(Kg)

Approximate weight

Case style

1600

(R-PUK)

See Outline Table

∆R_thJ-CConduction

(The following table shows the increment of thermal resistence R_thJ-Cwhen devices operate at different conduction angles than DC)

Conduction angle

Single side

0.0010

Double side

0.0010

Units

K/W

Conditions

T_J= T_Jmax.

180°

120°

60°

0.0017

0.0044

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ST2600C..R Series

Bulletin I25199 rev. B 02/00

Ordering Information Table

Device Code

ST 260

Thyristor

Essential part number

0 = Converter grade

C = Ceramic Puk

Voltage code: Code x 100 = V_RRM(See Voltage Rating Table)

R = Puk Case

0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)

1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)

2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)

3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)

Critical dv/dt: None = 500V/µsec (Standard selection)

= 1000V/µsec (Special selection)

Outline Table

112.5 (4.4) DIA. MAX.

73.2 (2.9) DIA. MAX.

TWO PLACES

GATE

1.5 (0.06) DIA.

ANODE

HOLE 1.5 (0.06)

DIA. MAX.

4.76 (0.2)

CATHODE

20° 5°

)

(

(R-PUK)

All dimensions in millimeters (inches)

3.7 (0.15) DIA. NOM. X

2.1 (0.1) DEEP MIN.

BOTH ENDS

Quote between upper and lower

pole pieces has to be considered

after application of Mounting Force

(see Thermal and Mechanical

Specification)

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ST2600C..R Series

Bulletin I25199 rev. B 02/00

130

120

110

100

130

120

110

100

ST2600C..R Series

(Single Side Cooled)

(Double Side Cooled)

(DC) = 0.0115 K/W

(DC) = 0.023 K/W

thJ-hs

Conduction Angle

60˚

120˚

180˚

120˚

180˚

1000

2000

3000

4000

1000 2000 3000 4000 5000

AverageOn-stateCurrent(A)

Average On-state Current (A)

Fig. 1 - Current Ratings Characteristics

Fig. 2 - Current Ratings Characteristics

9000

8000

7000

6000

5000

4000

3000

2000

1000

10000

1000

100

180˚

120˚

60˚

T = 125˚C

RMS Limit

Conduction Angle

ST2600C..R Series

= 125˚C

1000 2000 3000 4000 5000

0.5

1.5

2.5

Average On-state Current (A)

Fig. 4- On-state Power Loss Characteristics

Fig. 3- On-state Power Loss Characteristics

75000

70000

65000

60000

55000

50000

45000

40000

35000

30000

45000

40000

35000

30000

25000

20000

15000

10000

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control

Of Conduction May Not Be Maintained.

At Any Rated Load Condition And With

50% Rated V

Applied Following Surge

RRM

Initial T = 125˚C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

50% Rated V

Reapplied

RRM

ST2600C..R Series

100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Pulse Train Duration (s)

Fig.5 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

Fig. 6 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

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ST2600C..R Series

Bulletin I25199 rev. B 02/00

10000

= 125˚C

max.

min.

= s

(RC)

ST2600C..R Series

1000

100

Rate Of Decay Of On-state Current - di/dt (A/µs)

Fig. 7 - Stored Charged

0.1

0.01

ST2600C..R Series

Steady State Value

= 0.019 K/W

thJ-C

(Single Side Cooled)

= 0.0095 K/W

0.001

0.0001

thJ-C

(Double Side Cooled)

(DC Operation)

0.001

0.01

0.1

Square Wave Pulse Duration (s)

Fig. 10 - Thermal Impedance Z_thJ-hsCharacteristics

100

(1) PGM = 2W

(2) PGM = 4W

(3) PGM = 8W

(4) PGM = 20W

(5) PGM = 50W

(6) PGM =100W

(6)

(3)

(5)

(2)

(4)

(1)

VGD

IGD

Device: ST2600C..R Series

Frequency Limited by PG(AV)

0.1

0.001

0.01

0.1

Instantaneous Gate Current (A)

Fig. 11 - Gate Characteristics

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相关型号：

ST2600C28R0L

Silicon Controlled Rectifier, 4800A I(T)RMS, 2200000mA I(T), 2800V V(DRM), 2800V V(RRM), 1 Element, RPUK-2