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STD12NE06L-1 [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 12A I(D) | TO-251AA ; 晶体管| MOSFET | N沟道| 60V V（ BR ） DSS | 12A I（ D） | TO- 251AA\n
STD12NE06L-1
型号： STD12NE06L-1
厂家： ETC    ETC
描述：

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 12A I(D) | TO-251AA
晶体管| MOSFET | N沟道| 60V V（ BR ） DSS | 12A I（ D） | TO- 251AA\n

晶体 晶体管 开关 脉冲
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STD12NE06L  
N - CHANNEL 60V - 0.09Ω - 12A TO-251/TO-252  
STripFET POWER MOSFET  
TYPE  
VDSS  
RDS(on)  
ID  
STD12NE06L  
60 V  
< 0.12 Ω  
12 A  
■
■
■
■
■
TYPICAL RDS(on) = 0.09 Ω  
EXCEPTIONAL dv/dt CAPABILITY  
AVALANCHERUGGED TECHNOLOGY  
100 % AVALANCHE TESTED  
APPLICATIONORIENTED  
CHARACTERIZATION  
3
3
2
1
1
■
ADD SUFFIX ”T4” FOR ORDERING IN TAPE  
& REEL  
IPAK  
TO-251  
(Suffix ”-1”)  
DPAK  
TO-252  
(Suffix ”T4”)  
DESCRIPTION  
This Power MOSFET is the latest developmentof  
STMicroelectronics unique ”Single Feature  
Size ” strip-based process. The resulting transi-  
stor shows extremely high packing density for low  
on-resistance, rugged avalanche characteristics  
and less critical alignment steps therefore a re-  
markable manufacturingreproducibility.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
■
■
■
DC MOTOR CONTROL (DISK DRIVES,etc.)  
DC-DC & DC-AC CONVERTERS  
SYNCHRONOUS RECTIFICATION  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
VDGR  
VGS  
ID  
Parameter  
Value  
Unit  
V
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 kΩ)  
Gate-source Voltage  
60  
60  
V
± 20  
V
o
Drain Current (continuous) at Tc = 25 C  
12  
A
o
ID  
Drain Current (continuous) at Tc = 100 C  
8
A
I
DM(• )  
Drain Current (pulsed)  
48  
35  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
W
Derating Factor  
0.23  
6
W/oC  
V/ns  
oC  
oC  
dv/dt(1) Peak Diode Recovery voltage slope  
Tstg  
Storage Temperature  
-65 to 175  
175  
Tj  
Max. Operating Junction Temperature  
(•) Pulse width limited by safe operating area  
( ) ISD ≤ 12 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX  
1
1/9  
January 2000  
STD12NE06L  
THERMAL DATA  
Rthj-case Thermal Resistance Junction-case  
Rthj-amb Thermal Resistance Junction-ambient  
Rthc-sink Thermal Resistance Case-sink  
Max  
Max  
Typ  
4.3  
100  
1.5  
oC/W  
oC/W  
oC/W  
oC  
Tl  
Maximum Lead Temperature For Soldering Purpose  
275  
AVALANCHE CHARACTERISTICS  
Symbol  
Parameter  
Max Value  
Unit  
IAR  
Avalanche Current, Repetitive or Not-Repetitive  
(pulse width limited by Tj max)  
12  
A
EAS  
Single Pulse Avalanche Energy  
(starting Tj = 25 C, ID = IAR, VDD = 25 V)  
45  
mJ  
o
(Tcase = 25 oC unless otherwisespecified)  
ELECTRICAL CHARACTERISTICS  
OFF  
Symbol  
V(BR)DSS Drain-source  
Breakdown Voltage  
Zero Gate Voltage  
Drain Current (VGS = 0) VDS = Max Rating  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
ID = 250  
A
VGS = 0  
60  
V
µ
IDSS  
IGSS  
VDS = Max Rating  
1
10  
A
µ
µA  
o
Tc = 100 C  
Gate-body Leakage  
Current (VDS = 0)  
VGS  
=
20 V  
100  
±
nA  
±
ON ( )  
Symbol  
VGS(th)  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
Gate Threshold Voltage VDS = VGS ID = 250 µA  
Static Drain-source On VGS = 5V ID = 6 A  
Resistance VGS = 10V ID = 6 A  
1
1.7  
2.5  
V
RDS(on)  
0.09  
0.07  
0.12  
0.10  
Ω
Ω
ID(on)  
On State Drain Current VDS > ID(on) x RDS(on)max  
VGS = 10 V  
12  
A
DYNAMIC  
Symbol  
Parameter  
Forward  
Test Conditions  
VDS > ID(on) x RDS(on)max ID =6 A  
Min.  
Typ.  
Max.  
Unit  
gfs ( )  
4
7
S
Transconductance  
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer  
Capacitance  
VDS = 25 V f = 1 MHz VGS = 0  
700  
100  
30  
1000  
140  
45  
pF  
pF  
pF  
2/9  
STD12NE06L  
ELECTRICAL CHARACTERISTICS  
(continued)  
SWITCHING ON  
Symbol  
Parameter  
Turn-on Time  
Test Conditions  
VDD = 30 V  
RG = 4.7  
Min.  
Typ.  
Max.  
Unit  
td(on)  
tr  
ID = 8 A  
VGS = 5 V  
17  
38  
25  
50  
ns  
ns  
Rise Time  
Ω
(see test circuit, figure 3)  
Qg  
Qgs  
Qgd  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
VDD = 48 V ID = 16 A VGS = 5 V  
12  
6
6
16  
nC  
nC  
nC  
SWITCHING OFF  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
tr(Voff)  
tf  
tc  
Off-voltage Rise Time  
Fall Time  
Cross-over Time  
VDD = 48 V  
RG = 4.7 Ω  
(see test circuit, figure 5)  
ID = 16 A  
VGS = 5 V  
9
18  
30  
12  
25  
45  
ns  
ns  
ns  
SOURCE DRAIN DIODE  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
ISD  
ISDM (• )  
Source-drain Current  
Source-drain Current  
(pulsed)  
12  
48  
A
A
VSD ( ) Forward On Voltage  
ISD = 12 A VGS = 0  
1.5  
V
trr  
Reverse Recovery  
Time  
Reverse Recovery  
Charge  
Reverse Recovery  
Current  
ISD = 16 A  
VDD = 25 V  
(see test circuit, figure 5)  
di/dt = 100 A/ s  
70  
0.13  
4
ns  
µ
Tj = 150 oC  
Qrr  
C
µ
IRRM  
A
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %  
µ
(•) Pulse width limited by safe operating area  
Safe Operating Area for  
Thermal Impedance  
3/9  
STD12NE06L  
Output Characteristics  
Transfer Characteristics  
Transconductance  
Static Drain-source On Resistance  
Gate Charge vs Gate-sourceVoltage  
CapacitanceVariations  
4/9  
STD12NE06L  
Normalized Gate ThresholdVoltage vs  
Temperature  
Normalized On Resistance vs Temperature  
Source-drainDiode Forward Characteristics  
5/9  
STD12NE06L  
Fig. 1:  
Fig. 2:  
UnclampedInductive Waveform  
Unclamped Inductive Load Test Circuit  
Fig. 3: Switching Times Test Circuits For  
Fig. 4: Gate Charge test Circuit  
Resistive Load  
Fig. 5:  
Test Circuit For InductiveLoad Switching  
And Diode Recovery Times  
6/9  
STD12NE06L  
TO-251 (IPAK) MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
2.2  
TYP.  
MAX.  
2.4  
MIN.  
0.086  
0.035  
0.027  
0.025  
0.204  
MAX.  
0.094  
0.043  
0.051  
0.031  
0.212  
0.033  
A
A1  
A3  
B
0.9  
1.1  
0.7  
1.3  
0.64  
5.2  
0.9  
B2  
B3  
B5  
B6  
C
5.4  
0.85  
0.3  
0.012  
0.95  
0.6  
0.6  
6.2  
6.6  
4.6  
16.3  
9.4  
1.2  
1
0.037  
0.023  
0.023  
0.244  
0.260  
0.181  
0.641  
0.370  
0.047  
0.039  
0.45  
0.48  
6
0.017  
0.019  
0.236  
0.252  
0.173  
0.626  
0.354  
0.031  
C2  
D
E
6.4  
4.4  
15.9  
9
G
H
L
L1  
L2  
0.8  
0.8  
0.031  
H
L
D
L2  
L1  
0068771-E  
7/9  
STD12NE06L  
TO-252 (DPAK) MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
2.2  
TYP.  
MAX.  
2.4  
MIN.  
0.086  
0.035  
0.001  
0.025  
0.204  
0.017  
0.019  
0.236  
0.252  
0.173  
0.368  
MAX.  
0.094  
0.043  
0.009  
0.035  
0.212  
0.023  
0.023  
0.244  
0.260  
0.181  
0.397  
A
A1  
A2  
B
0.9  
1.1  
0.03  
0.64  
5.2  
0.23  
0.9  
B2  
C
5.4  
0.45  
0.48  
6
0.6  
C2  
D
0.6  
6.2  
E
6.4  
6.6  
G
4.4  
4.6  
H
9.35  
10.1  
L2  
L4  
0.8  
0.031  
0.6  
1
0.023  
0.039  
H
DETAIL ”A”  
D
L2  
DETAIL ”A”  
L4  
0068772-B  
8/9  
STD12NE06L  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parites which may result from its use. No license is  
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publication are  
subject tochange without notice. This publication supersedes and replaces all informaiton previouslysupplied. STMicroelectronics products  
are not authorized for use as critical components in life support devices or systemswithout express written approval of STMicroelectronics.  
The ST logo is a trademark of STMicroelectronics  
1999 STMicroelectronics – Printed in Italy – All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -  
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.  
http://www.st.com  
.
9/9  

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