STP5NA90 [ETC]

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型号：	STP5NA90
厂家：	ETC
描述：
文件：	总6页 (文件大小：48K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

STP5NB90

STP5NB90FP

N - CHANNEL 900V - 2.3

Ω

- 5A - TO-220/TO-220FP

PowerMESH

MOSFET

PRELIMINARY DATA

TYPE

V_DSS

R_DS(on)

I_D

STP5NB90

STP5NB90FP

900 V

< 2.5 Ω

< 2.5

Ω

5 A

■

TYPICAL R_DS(on)= 2.3

Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

VERY LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

process, STMicroelectronics has designed an

advanced family of power MOSFETs with

outstanding performances. The new patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

TO-220

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

UNINTERRUPTIBLE POWER SUPPLY(UPS)

DC-DC & DC-AC CONVERTERS FOR

TELECOM, INDUSTRIAL AND CONSUMER

ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

STP5NB90FP

Unit

STP5NB90

V_DS

V_DGR

V_GS

I_D

Drain-source Voltage (V_GS= 0)

900

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at T_c= 25 ^oC

Drain Current (continuous) at T_c= 100 ^oC

Drain Current (pulsed)

5(*)

3.1(*)

I_D

3.1

I_DM( )

•

P_tot

Total Dissipation at T_c= 25 ^oC

125

1.0

4.5

Derating Factor

0.32

4.5

W/^oC

V/ns

^oC

dv/dt( ) Peak Diode Recovery voltage slope

V_ISO

T_stg

T_j

Insulation Withstand Voltage (DC)

Storage Temperature

2000

-65 to 150

150

Max. Operating Junction Temperature

•

≤5

Α, ≤ µ ≤ ≤

di/dt 200 A/ s, V_DDV_(BR)DSS, Tj T_JMAX

( ) Pulse width limited by safe operating area

( 1) I_SD

(*) Limited only by maximum temperature allowed

1/6

September 1998

STP5NB90/FP

THERMAL DATA

TO-220

TO220-FP

R_thj-caseThermal Resistance Junction-case

Max

3.13

^oC/W

R_thj-ambThermal Resistance Junction-ambient

R_thc-sinkThermal Resistance Case-sink

Max

Typ

62.5

0.5

300

^oC/W

^oC

T_l

Maximum Lead Temperature For Soldering Purpose

AVALANCHE CHARACTERISTICS

Symbol

Parameter

Max Value

Unit

I_AR

Avalanche Current, Repetitive or Not-Repetitive

E_AS

Single Pulse Avalanche Energy

318

(starting T_j= 25 ^oC, I_D= I_AR, V_DD= 50 V)

(T_case= 25 ^oC unless otherwisespecified)

ELECTRICAL CHARACTERISTICS

OFF

Symbol

V_(BR)DSSDrain-source

Breakdown Voltage

Zero Gate Voltage

Drain Current (V_GS= 0) V_DS= Max Rating

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

900

I_D= 250 µA V_GS= 0

I_DSS

I_GSS

V_DS= Max Rating

µA

T_c= 125 C

Gate-body Leakage

Current (V_DS= 0)

± 100

V_GS

30 V

ON ( )

Symbol

Parameter

Test Conditions

V_DS= V_GSI_D= 250

Min.

Typ.

Max.

Unit

V_GS(th)

Gate Threshold

Voltage

R_DS(on)

I_D(on)

Static Drain-source On V_GS= 10V I_D= 2.5 A

Resistance

2.3

2.5

Ω

On State Drain Current V_DS> I_D(on)x R_DS(on)max

V_GS= 10 V

DYNAMIC

Symbol

Parameter

Forward

Test Conditions

V_DS> I_D(on)x R_DS(on)maxI_D= 2.5 A

Min.

Typ.

Max.

Unit

g_fs( )

2.5

4.1

Transconductance

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

V_DS= 25 V f = 1 MHz V_GS= 0

1250

128

1625

170

2/6

STP5NB90/FP

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHING ON

Symbol

Parameter

Turn-on Time

Test Conditions

V_DD= 450 V I_D= 2.5 A

R_G= 4.7 Ω V_GS= 10 V

Min.

Typ.

Max.

Unit

t_d(on)

t_r

Rise Time

Q_g

Q_gs

Q_gd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V_DD=720 V I_D=5 A V_GS= 10 V

SWITCHING OFF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

t_r(Voff)

t_f

t_c

Off-voltage Rise Time

Fall Time

Cross-over Time

V_DD= 720 V I_D=5 A

R_G= 4.7 Ω V_GS= 10 V

SOURCE DRAIN DIODE

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

I_SD

I_SDM(• )

Source-drain Current

(pulsed)

V_SD( ) Forward On Voltage

I_SD= 5 A V_GS= 0

1.6

t_rr

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

700

5.4

I_SD= 5 A di/dt = 100 A/ s

V_DD= 100 V

T_j= 150 ^oC

Q_rr

I_RRM

( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(•) Pulse width limited by safe operating area

3/6

STP5NB90/FP

TO-220 MECHANICAL DATA

inch

TYP.

DIM.

MIN.

4.40

1.23

2.40

TYP.

MAX.

4.60

1.32

2.72

MIN.

0.173

0.048

0.094

MAX.

0.181

0.051

0.107

1.27

0.050

0.49

0.61

1.14

4.95

2.4

0.70

0.88

1.70

5.15

2.7

0.019

0.024

0.044

0.194

0.094

0.393

0.027

0.034

0.067

0.203

0.106

0.409

DIA.

10.0

10.40

16.4

0.645

13.0

2.65

15.25

6.2

14.0

2.95

15.75

6.6

0.511

0.104

0.600

0.244

0.137

0.147

0.551

0.116

0.620

0.260

0.154

0.151

3.5

3.93

3.85

3.75

Dia.

P011C

4/6

STP5NB90/FP

TO-220FP MECHANICAL DATA

inch

TYP.

DIM.

MIN.

4.4

TYP.

MAX.

4.6

2.7

2.75

0.7

MIN.

0.173

0.098

0.017

0.030

0.045

0.195

0.094

0.393

MAX.

0.181

0.106

0.108

0.027

0.039

0.067

0.204

0.106

0.409

2.5

0.45

0.75

1.15

4.95

2.4

1.7

5.2

2.7

10.4

0.630

28.6

9.8

15.9

30.6

10.6

16.4

9.3

1.126

0.385

0.626

0.354

0.118

1.204

0.417

0.645

0.366

0.126

3.2

1 2 3

5/6

STP5NB90/FP

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences

of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is

granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are

subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products

are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics

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