STPS1045BH [ETC]
POWER SCHOTTKY RECTIFIER ; 功率肖特基整流器\n型号: | STPS1045BH |
厂家: | ETC |
描述: | POWER SCHOTTKY RECTIFIER
|
文件: | 总5页 (文件大小:76K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
STPS1045B/H
®
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
10 A
45 V
K
VF (max)
0.57 V
K
FEATURES AND BENEFITS
NEGLIGIBLE SWITCHING LOSSES
LOW FORWARD DROP VOLTAGE
LOW CAPACITANCE
HIGH REVERSE AVALANCHE SURGE
CAPABILITY
A
K
A
A
K
A
AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
IPAK
STPS1045H
DPAK
STPS1045B
High voltage Schottky rectifier suited for Switch
Mode Power Supplies and other Power
Converters.
Packaged in DPAK and IPAK, these devices are
intended for use in high frequency circuitries
where low switching losses are required.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Repetitive peak reverse voltage
Value
Unit
VRRM
45
7
V
A
A
IF(RMS) / pin RMS forward current / pin
IF(AV)
Average forward current
Tc = 150°C
10
d = 0.5
IFSM
Surge non repetitive forward current
tp = 10 ms
Sinusoidal
75
A
IRRM
PARM
Tstg
Repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
tp = 2 µs F = 1KHz
tp = 1µs Tj = 25°C
1
4000
A
W
- 65 to + 175
175
°C
Tj
Maximum junction temperature
Critical rate of rise of reverse voltage
°C
dV/dt
10000
V/µs
July 2003 - Ed: 3B
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STPS1045B/H
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth (j-c) Junction to case
3
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Tests Conditions
Min. Typ. Max.
Unit
µA
mA
V
IR *
Reverse leakage current
Tj = 25°C
VR = 45 V
100
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
7
15
VF **
Forward voltage drop
IF = 10 A
IF = 10 A
IF = 20 A
IF = 20 A
0.63
0.57
0.84
0.72
0.5
0.65
Pulse test : * tp = 380 µs, δ < 2 %
**tp = 5 ms, δ < 2%
To evaluate the maximum2conduction losses use the following equation :
P = 0.42 x IF(AV) + 0.015 IF (RMS)
Fig. 1: Average forward power dissipation versus
average forward current.
Fig. 2: Average forward current versus ambient
temperature (δ=0.5).
PF(av)(W)
IF(av)(A)
8
12
δ = 0.1
δ = 0.2
δ = 0.5
δ = 0.05
Rth(j-a)=Rth(j-c)
7
6
5
4
3
2
1
0
10
δ = 1
8
Rth(j-a)=15°C/W
6
Rth(j-a)=70°C/W
4
T
T
2
Tamb(°C)
IF(av) (A)
tp
=tp/T
δ
tp
=tp/T
δ
0
0
25
50
75
100
125
150
175
0
1
2
3
4
5
6
7
8
9
10 11 12
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P
(t )
p
(1µs)
ARM
P
ARM
(t )
p
(25°C)
ARM
P
ARM
P
1
1.2
1
0.1
0.8
0.6
0.4
0.2
0
0.01
T (°C)
j
t (µs)
p
0.001
0
25
50
75
100
125
150
0.01
0.1
1
10
100
1000
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STPS1045B/H
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values).
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
IM(A)
1.0
120
100
0.8
80
δ = 0.5
0.6
Tc=50°C
60
Tc=100°C
0.4
δ = 0.2
40
T
Tc=150°C
δ = 0.1
IM
0.2
20
t
t(s)
tp(s)
δ=0.5
tp
Single pulse
=tp/T
δ
0
0.0
1E-4
1E-3
1E-2
1E-1
1E+0
1E-3
1E-2
1E-1
1E+0
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
IR(µA)
C(pF)
1E+5
1000
F=1MHz
Tj=25°C
Tj=150°C
1E+4
Tj=125°C
500
200
1E+3
Tj=100°C
1E+2
Tj=75°C
Tj=50°C
1E+1
Tj=25°C
1E+0
VR(V)
VR(V)
1E-1
100
0
5
10 15 20 25 30 35 40 45
1
2
5
10
20
50
Fig. 9: Forward voltage drop versus forward
current (maximum values).
Fig. 10: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit
board,
copper
thickness:
35µm)
(STPS1045B).
IFM(A)
Rth(j-a) (°C/W)
100.0
100
Tj=125°C
(Typical values)
80
60
40
20
0
Tj=125°C
Tj=25°C
10.0
1.0
S(Cu) (cm²)
8 10 12 14 16 18 20
VFM(V)
0.1
0
2
4
6
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
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STPS1045B/H
PACKAGE MECHANICAL DATA
IPAK
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
REF.
A
A
2.2
0.9
2.4 0.086
1.1 0.035
1.3 0.027
0.9 0.025
5.4 0.204
0.85
0.094
0.043
0.051
0.035
0.212
0.033
A1
A3
B
E
C2
0.7
B2
L2
0.64
5.2
B2
B3
B5
B6
C
D
0.3
0.035
0.95
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
H
B3
L1
0.45
0.6 0.017
0.6 0.019
6.2 0.236
6.6 0.252
4.6 0.173
16.3 0.626
9.4 0.354
1.2 0.031
1
B6
L
A1
B
C2 0.48
V1
D
E
6
6.4
4.4
15.9
9
G
B5
C
G
A3
H
L
L1
L2
V1
0.8
0.8
10°
0.031 0.039
10°
COOLING METHOD: BY CONDUCTION (C)
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STPS1045B/H
PACKAGE MECHANICAL DATA
DPAK
DIMENSIONS
Millimeters Inches
Min. Typ. Max Min. Typ. Max.
REF.
A
A1
A2
B
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
2.40 0.086
1.10 0.035
0.23 0.001
0.90 0.025
5.40 0.204
0.60 0.017
0.60 0.018
6.20 0.236
6.60 0.251
4.60 0.173
10.10 0.368
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.259
0.181
0.397
B2
C
C2
D
E
G
H
L2
L4
V2
0.80
0.031
0.60
0°
1.00 0.023
0.039
8°
8°
0°
COOLING METHOD: BY CONDUCTION (C)
FOOT PRINT DIMENSIONS (in millimeters)
6.7
6.7
6.7
3
1.6
1.6
2.3 2.3
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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