STPS1045BH [ETC]

POWER SCHOTTKY RECTIFIER ; 功率肖特基整流器\n
STPS1045BH
型号: STPS1045BH
厂家: ETC    ETC
描述:

POWER SCHOTTKY RECTIFIER
功率肖特基整流器\n

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STPS1045B/H  
®
POWER SCHOTTKY RECTIFIER  
MAIN PRODUCT CHARACTERISTICS  
IF(AV)  
VRRM  
10 A  
45 V  
K
VF (max)  
0.57 V  
K
FEATURES AND BENEFITS  
NEGLIGIBLE SWITCHING LOSSES  
LOW FORWARD DROP VOLTAGE  
LOW CAPACITANCE  
HIGH REVERSE AVALANCHE SURGE  
CAPABILITY  
A
K
A
A
K
A
AVALANCHE CAPABILITY SPECIFIED  
DESCRIPTION  
IPAK  
STPS1045H  
DPAK  
STPS1045B  
High voltage Schottky rectifier suited for Switch  
Mode Power Supplies and other Power  
Converters.  
Packaged in DPAK and IPAK, these devices are  
intended for use in high frequency circuitries  
where low switching losses are required.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Repetitive peak reverse voltage  
Value  
Unit  
VRRM  
45  
7
V
A
A
IF(RMS) / pin RMS forward current / pin  
IF(AV)  
Average forward current  
Tc = 150°C  
10  
d = 0.5  
IFSM  
Surge non repetitive forward current  
tp = 10 ms  
Sinusoidal  
75  
A
IRRM  
PARM  
Tstg  
Repetitive peak reverse current  
Repetitive peak avalanche power  
Storage temperature range  
tp = 2 µs F = 1KHz  
tp = 1µs Tj = 25°C  
1
4000  
A
W
- 65 to + 175  
175  
°C  
Tj  
Maximum junction temperature  
Critical rate of rise of reverse voltage  
°C  
dV/dt  
10000  
V/µs  
July 2003 - Ed: 3B  
1/5  
STPS1045B/H  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
Unit  
Rth (j-c) Junction to case  
3
°C/W  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol  
Parameter  
Tests Conditions  
Min. Typ. Max.  
Unit  
µA  
mA  
V
IR *  
Reverse leakage current  
Tj = 25°C  
VR = 45 V  
100  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
7
15  
VF **  
Forward voltage drop  
IF = 10 A  
IF = 10 A  
IF = 20 A  
IF = 20 A  
0.63  
0.57  
0.84  
0.72  
0.5  
0.65  
Pulse test : * tp = 380 µs, δ < 2 %  
**tp = 5 ms, δ < 2%  
To evaluate the maximum2conduction losses use the following equation :  
P = 0.42 x IF(AV) + 0.015 IF (RMS)  
Fig. 1: Average forward power dissipation versus  
average forward current.  
Fig. 2: Average forward current versus ambient  
temperature (δ=0.5).  
PF(av)(W)  
IF(av)(A)  
8
12  
δ = 0.1  
δ = 0.2  
δ = 0.5  
δ = 0.05  
Rth(j-a)=Rth(j-c)  
7
6
5
4
3
2
1
0
10  
δ = 1  
8
Rth(j-a)=15°C/W  
6
Rth(j-a)=70°C/W  
4
T
T
2
Tamb(°C)  
IF(av) (A)  
tp  
=tp/T  
δ
tp  
=tp/T  
δ
0
0
25  
50  
75  
100  
125  
150  
175  
0
1
2
3
4
5
6
7
8
9
10 11 12  
Fig. 3: Normalized avalanche power derating  
versus pulse duration.  
Fig. 4: Normalized avalanche power derating  
versus junction temperature.  
P
(t )  
p
(1µs)  
ARM  
P
ARM  
(t )  
p
(25°C)  
ARM  
P
ARM  
P
1
1.2  
1
0.1  
0.8  
0.6  
0.4  
0.2  
0
0.01  
T (°C)  
j
t (µs)  
p
0.001  
0
25  
50  
75  
100  
125  
150  
0.01  
0.1  
1
10  
100  
1000  
2/5  
STPS1045B/H  
Fig. 5: Non repetitive surge peak forward current  
versus overload duration (maximum values).  
Fig. 6: Relative variation of thermal impedance  
junction to case versus pulse duration.  
Zth(j-c)/Rth(j-c)  
IM(A)  
1.0  
120  
100  
0.8  
80  
δ = 0.5  
0.6  
Tc=50°C  
60  
Tc=100°C  
0.4  
δ = 0.2  
40  
T
Tc=150°C  
δ = 0.1  
IM  
0.2  
20  
t
t(s)  
tp(s)  
δ=0.5  
tp  
Single pulse  
=tp/T  
δ
0
0.0  
1E-4  
1E-3  
1E-2  
1E-1  
1E+0  
1E-3  
1E-2  
1E-1  
1E+0  
Fig. 7: Reverse leakage current versus reverse  
voltage applied (typical values).  
Fig. 8: Junction capacitance versus reverse  
voltage applied (typical values).  
IR(µA)  
C(pF)  
1E+5  
1000  
F=1MHz  
Tj=25°C  
Tj=150°C  
1E+4  
Tj=125°C  
500  
200  
1E+3  
Tj=100°C  
1E+2  
Tj=75°C  
Tj=50°C  
1E+1  
Tj=25°C  
1E+0  
VR(V)  
VR(V)  
1E-1  
100  
0
5
10 15 20 25 30 35 40 45  
1
2
5
10  
20  
50  
Fig. 9: Forward voltage drop versus forward  
current (maximum values).  
Fig. 10: Thermal resistance junction to ambient  
versus copper surface under tab (Epoxy printed  
circuit  
board,  
copper  
thickness:  
35µm)  
(STPS1045B).  
IFM(A)  
Rth(j-a) (°C/W)  
100.0  
100  
Tj=125°C  
(Typical values)  
80  
60  
40  
20  
0
Tj=125°C  
Tj=25°C  
10.0  
1.0  
S(Cu) (cm²)  
8 10 12 14 16 18 20  
VFM(V)  
0.1  
0
2
4
6
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6  
3/5  
STPS1045B/H  
PACKAGE MECHANICAL DATA  
IPAK  
DIMENSIONS  
Millimeters Inches  
Min. Typ. Max. Min. Typ. Max.  
REF.  
A
A
2.2  
0.9  
2.4 0.086  
1.1 0.035  
1.3 0.027  
0.9 0.025  
5.4 0.204  
0.85  
0.094  
0.043  
0.051  
0.035  
0.212  
0.033  
A1  
A3  
B
E
C2  
0.7  
B2  
L2  
0.64  
5.2  
B2  
B3  
B5  
B6  
C
D
0.3  
0.035  
0.95  
0.037  
0.023  
0.023  
0.244  
0.260  
0.181  
0.641  
0.370  
0.047  
H
B3  
L1  
0.45  
0.6 0.017  
0.6 0.019  
6.2 0.236  
6.6 0.252  
4.6 0.173  
16.3 0.626  
9.4 0.354  
1.2 0.031  
1
B6  
L
A1  
B
C2 0.48  
V1  
D
E
6
6.4  
4.4  
15.9  
9
G
B5  
C
G
A3  
H
L
L1  
L2  
V1  
0.8  
0.8  
10°  
0.031 0.039  
10°  
COOLING METHOD: BY CONDUCTION (C)  
4/5  
STPS1045B/H  
PACKAGE MECHANICAL DATA  
DPAK  
DIMENSIONS  
Millimeters Inches  
Min. Typ. Max Min. Typ. Max.  
REF.  
A
A1  
A2  
B
2.20  
0.90  
0.03  
0.64  
5.20  
0.45  
0.48  
6.00  
6.40  
4.40  
9.35  
2.40 0.086  
1.10 0.035  
0.23 0.001  
0.90 0.025  
5.40 0.204  
0.60 0.017  
0.60 0.018  
6.20 0.236  
6.60 0.251  
4.60 0.173  
10.10 0.368  
0.094  
0.043  
0.009  
0.035  
0.212  
0.023  
0.023  
0.244  
0.259  
0.181  
0.397  
B2  
C
C2  
D
E
G
H
L2  
L4  
V2  
0.80  
0.031  
0.60  
0°  
1.00 0.023  
0.039  
8°  
8°  
0°  
COOLING METHOD: BY CONDUCTION (C)  
FOOT PRINT DIMENSIONS (in millimeters)  
6.7  
6.7  
6.7  
3
1.6  
1.6  
2.3 2.3  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of  
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by  
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to  
change without notice. This publication supersedes and replaces all information previously supplied.  
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written  
approval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
© 2003 STMicroelectronics - Printed in Italy - All rights reserved.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany  
Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore  
Spain - Sweden - Switzerland - United Kingdom - United States.  
5/5  

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