STPS5L40-C2 [ETC]

POWER SCHOTTKY RECTIFIER ; 功率肖特基整流器\n


型号：	STPS5L40-C2
厂家：	ETC
描述：	POWER SCHOTTKY RECTIFIER 功率肖特基整流器\n
文件：	总4页 (文件大小：66K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

STPS5L40-C2

POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

I_F(AV)

V_RRM

5 A

40 V

Tj (max)

V_F(max)

150°C

0.44 V

FEATURES AND BENEFITS

■

NEGLIGIBLE SWITCHING LOSSES

■

LOW FORWARD VOLTAGE DROP FOR

HIGHER EFFICIENCY.

■

LOW THERMAL RESISTANCE

AVALANCHE CAPABILITY SPECIFIED

DESCRIPTION

DO-201AD

Axial Power Schottky rectifier suited for Switch

Mode Power Supplies and high frequency

inverters.

STPS5L40-C2

Packaged in DO-201AD, this device is intended for

use in low voltage output for small battery chargers

consumer SMPS such as DVD and

Set-Top-Box.

ABSOLUTE RATINGS (limiting values)

Symbol

V_RRM

I_F(RMS)

I_F(AV)

Parameter

Value

Unit

Repetitive peak reverse voltage

RMS forward current

Average forward current

Tl = 100°C δ = 0.5

I_FSM

150

Surge non repetitive forward current

Half wave, single phase

tp = 10 ms

P_ARM

T_stg

2700

- 65 to + 150

150

°C

Repetitive peak avalanche power

Storage temperature range

tp = 1µs Tj = 25°C

°C

Maximum operating junction temperature *

dV/dt

10000

V/µs

Critical rate of rise of reverse voltage (rated V_R, Tj = 25°C)

dPtot

* :

thermal runaway condition for a diode on its own heatsink

dTj

Rth(j − a)

July 2003 - Ed: 2A

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STPS5L40-C2

THERMAL PARAMETERS

Symbol

Parameter

Value

Unit

°C/W

R_th(j-a)

R_th(j-l)

Junction to ambient

Junction to leads

Lead length = 10 mm

STATIC ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Tests conditions

Tj = 25°C V_R= V_RRM

Min. Typ. Max.

Unit

I_R*

0.2

Reverse leakage current

Tj = 100°C

Tj = 125°C

Tj = 25°C

V_F*

0.44

0.40

0.38

0.50

0.46

0.44

Forward voltage drop

I_F= 5 A

Tj = 100°C

Tj = 125°C

Pulse test : * tp = 380 µs, δ < 2%

To evaluate the maximum conduction losses use the following equation:

P = 0.34 x I_F(AV)+ 0.028 x I_{F (RMS)}

Fig. 1: Conduction losses versus average current.

Fig. 2: Average forward current versus ambient

temperature (δ = 0.5).

PF(av)(W)

3.5

IF(av)(A)

δ = 0.1

δ = 0.2

δ = 0.5

δ = 0.05

Rth(j-a)=Rth(j-l)

3.0

2.5

2.0

1.5

1.0

0.5

0.0

δ = 1

Rth(j-a)=75°C/W

IF(av)(A)

3.0 3.5

Tamb(°C)

=tp/T

0.0

0.5

1.0

1.5

2.0

2.5

4.0

4.5

5.0

5.5

6.0

100

125

150

Fig. 3: Normalized avalanche power derating

versus pulse duration.

Fig. 4: Normalized avalanche power derating

versus junction temperature.

(t )

(1µs)

ARM

(t )

(25°C)

ARM

1.2

0.1

0.8

0.6

0.4

0.2

0.01

T (°C)

t (µs)

0.001

100

125

150

0.01

0.1

100

1000

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STPS5L40-C2

Fig. 5: Non repetitive surge peak forward current

versus overload duration (maximum values).

Fig. 6: Relative variation of thermal impedance

junction to ambient versus pulse duration.

IM(A)

Zth(j-a)/Rth(j-a)

1.0

0.9

0.8

0.7

Ta=25°C

0.6

δ = 0.5

0.5

Ta=50°C

0.4

0.3

δ = 0.2

Ta=100°C

0.2

δ = 0.1

0.1

t(s)

Single pulse

tp(s)

1.E+03

=tp/T

δ=0.5

0.0

1.E-01

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values).

Fig. 8: Junction capacitance versus reverse

voltage applied (typical values).

IR(mA)

C(pF)

1000

1.E+02

Tj=150°C

F=1MHz

Vosc=30mV

Tj=25°C

Tj=125°C

1.E+01

Tj=100°C

Tj=75°C

1.E+00

Tj=50°C

100

1.E-01

Tj=25°C

1.E-02

VR(V)

1.E-03

100

Fig. 9-1: Forward voltage drop versus forward

current (low level).

Fig. 9-2: Forward voltage drop versus forward

current (high level).

IFM(A)

2.0

IFM(A)

100

1.8

Tj=125°C

(Maximum values)

1.6

Tj=125°C

(Maximum values)

1.4

1.2

Tj=125°C

(Typical values)

Tj=125°C

(Typical values)

1.0

Tj=25°C

(Maximum values)

0.8

0.6

0.4

0.2

VFM(V)

0.8

VFM(V)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.0

0.3

0.5

1.0

1.3

1.5

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STPS5L40-C2

Fig. 10: Thermal resistance junction to ambient

versus copper surface under each lead (epoxy

printed board FR4, Cu = 35µm).

Fig. 11: Thermal resistances versus leads length.

Rth(j-a)(°C/W)

Rth(°C/W)

Rth(j-a): Epoxy printed circuit board FR4 (Cu= 35µm)

Rth(j-l)

S(cm²)

Lleads(cm)

PACKAGE MECHANICAL DATA

DO-201AD plastic

DIMENSIONS

REF.

Millimeters

Inches

Min. Typ. Max. Min. Typ. Max.

9.5

17.75 0.541

5.3

1.3

0.374

0.699

0.208

0.051

13.75

R0.5

55.9°

50.8°

3.53

2.4 3.15 3.9 0.094 0.124 0.153

0.139

10° max

G = D + 0.2 to 0.4 mm

(G = hole in the PCB)

1.6

0.063

14.9

0.5

15.6 0.587

0.7 0.019 0.024 0.027

0.739

0.614

0.6

18.78

3.8

4.8 0.150

0.189

Ordering type

STPS5L40-C2

Marking

STPS5L40

Package

DO-201AD

Weight

1.12g

Base qty

500

Delivery mode

Ammopack

■

WHITE BAND INDICATES CATHODE

EPOXY MEETS UL94,V0

■

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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by

implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to

change without notice. This publication supersedes and replaces all information previously supplied.

STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written

approval of STMicroelectronics.

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STPS5L40-C2 [ETC]

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