STPS80L30C [ETC]
LOW DROP POWER SCHOTTKY RECTIFIER ; 电力低压降肖特基整流器
| 型号： | STPS80L30C |
| 厂家： | 
ETC |
| 描述： | LOW DROP POWER SCHOTTKY RECTIFIER
|
| 文件： | 总4页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STPS80L30CY
®
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
A1
A2
IF(AV)
VRRM
2 x 40 A
30 V
K
Tj (max)
VF (max)
150 °C
0.38 V
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
EXTREMELY FAST SWITCHING
LOW FORWARD VOLTAGE DROP
LOW THERMAL RESISTANCE
A2
K
AVALANCHE CAPABILITY SPECIFIED
A1
DESCRIPTION
Dual center tap Schottky rectifier suited for CAD
computers and servers.
Packaged in Max247, this device is intended for
use in low voltage, high frequency switching power
supplies, free wheeling and polarity protection
applications.
Max247
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
Repetitive peak reverse voltage
Value
30
Unit
V
VRRM
IF(RMS) RMS forward current
56
A
IF(AV)
Average forward current
Tc = 130°C Per diode
40
80
A
δ = 0.5
Per device
IFSM
IRRM
PARM
Tstg
Surge non repetitive forward current
Repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
tp = 10 ms sinusoidal
tp = 2 µs F = 1kHz square
tp = 1µs Tj = 25°C
400
2
A
A
13000
W
- 55 to + 150
150
°C
°C
V/µs
Tj
Maximum operating junction temperature
Critical rate of rise of reverse voltage
dV/dt
10000
dPtot
1
* :
<
thermal runaway condition for a diode on its own heatsink
dTj
Rth(j − a)
July 2003 - Ed: 4A
1/4
STPS80L30CY
THERMAL RESISTANCES
Symbol
Parameter
Value
0.7
Unit
Rth (j-c) Junction to case
Per diode
Total
°C/W
0.5
Rth (c)
Coupling
0.3
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Tests conditions
Min. Typ. Max.
Unit
mA
A
IR *
Reverse leakage current
Tj = 25°C
VR = VRRM
4
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
0.7
1.5
VF *
Forward voltage drop
IF = 40 A
IF = 40 A
IF = 80 A
IF = 80 A
0.48
0.38
0.58
0.53
V
0.34
0.48
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
2
P = 0.23 x IF(AV) + 0.0037 x IF (RMS)
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5, per diode).
IF(av)(A)
PF(av)(W)
50
45
40
35
30
25
20
15
10
22
20
18
δ = 0.5
δ = 0.2
Rth(j-a)=Rth(j-c)
δ = 0.1
δ = 0.05
16
δ = 1
14
12
10
8
6
4
Rth(j-a)=15°C/W
T
T
5
0
2
0
IF(av) (A)
10 15 20 25 30 35 40 45 50
Tamb(°C)
tp
=tp/T
tp
=tp/T
δ
δ
0
5
0
25
50
75
100
125
150
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P
(t )
p
(1µs)
ARM
P
ARM
(t )
p
(25°C)
ARM
P
ARM
P
1
1.2
1
0.1
0.8
0.6
0.4
0.2
0
0.01
T (°C)
j
t (µs)
p
0.001
0
25
50
75
100
125
150
0.01
0.1
1
10
100
1000
2/4
STPS80L30CY
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode)
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
IM(A)
Zth(j-c)/Rth(j-c)
600
550
500
450
400
350
1.0
0.8
δ = 0.5
0.6
Tc=25°C
300
250
200
Tc=75°C
0.4
δ = 0.2
T
150
100
50
Tc=125°C
δ = 0.1
0.2
t(s)
tp(s)
Single pulse
tp
=tp/T
δ
0.0
1E-4
0
1E-3
1E-2
1E-1
1E+0
1E-3
1E-2
1E-1
1E+0
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
IR(mA)
C(nF)
5E+3
10
F=1MHz
Tj=25°C
Tj=150°C
1E+3
Tj=125°C
5
1E+2
1E+1
2
Tj=25°C
1E+0
VR(V)
VR(V)
1E-1
1
0
5
10
15
20
25
30
1
2
5
10
20
50
Fig. 9: Forward voltage drop versus forward
current (maximum values, per diode).
IFM(A)
200
Tj=125°C
100
(typical values)
Tj=25°C
Tj=125°C
10
VFM(V)
1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
3/4
STPS80L30CY
PACKAGE MECHANICAL DATA
Max247
DIMENSIONS
Millimeters Inches
Min. Max. Min.
4.70 5.30
REF.
Max.
0.209
0.102
0.055
0.094
0.133
0.031
0.799
0.219
0.626
0.598
0.169
E
A
A
A1
b
0.185
0.087
0.038
0.079
0.118
0.016
0.776
0.211
0.602
0.559
0.146
2.20
1.00
2.00
3.00
0.40
19.70
5.35
15.30
14.20
3.70
2.60
1.40
2.40
3.40
0.80
10.30
5.55
15.90
15.20
4.30
b1
b2
c
D
D
L1
e
A1
E
b1
L
L
b2
L1
e
c
b
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STPS80L30CY STPS80L30CY
Max247
4.4 g
30
Tube
EPOXY MEETS UL94,V0
COOLING METHOD: C
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany
Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore
Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
4/4
相关型号：
©2020 ICPDF网 联系我们和版权申明