STTA12006 [ETC]
TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE ; TURBOSWITCH - 超快速高压二极管\n
| 型号： | STTA12006 |
| 厂家： | 
ETC |
| 描述： | TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE
|
| 文件： | 总8页 (文件大小：357K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STTA6006P
STTA12006TV1/2
®
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
60A / 2 x 60A
600V
K2
A2
A2 K1
trr (typ)
VF (max)
45ns
A1
K1
A1
K2
1.5V
STTA12006TV1
STTA12006TV2
FEATURES AND BENEFITS
SPECIFIC TO "FREEWHEEL MODE" OPERATIONS:
FREEWHEEL OR BOOSTER DIODE.
K
ULTRA-FAST RECOVERY.
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR.
A
K
HIGH FREQUENCY OPERATIONS.
SOD93
STTA6006P
INSULATED PACKAGE : ISOTOP
Electrical insulation : 2500VRMS
Capacitance < 45 pF
ISOTOPTM
DESCRIPTION
The TURBOSWITCH is a very high performance
series of ultra-fast high voltage power diodes from
600V to 1200V.
TURBOSWITCH family, drastically cuts losses in
both the diode and the associated switching IGBT
or MOSFET in all "freewheel mode" operations
and is particularly suitable and efficient in motor
control freewheel applications and in booster diode
applications in power factor control circuitries.
Packaged either in ISOTOP or SOD93 these 600V
devices are particularly intended for use on 240V
domestic mains.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
VRRM
Parameter
Repetitive peak reverse voltage
Value
600
Unit
V
VRSM
Non repetitive peak reverse voltage
RMS forward current
600
V
IF(RMS)
SOD93
80
A
ISOTOP
150
A
IFRM
IFSM
Tj
Repetitive peak forward current
Surge non repetitive forward current
Maximum operating junction temperature
Storage temperature range
tp=5µs F=5kHz square
450
A
tp=10 ms sinusoidal
500
A
150
°C
°C
Tstg
-65 to 150
TM : TURBOSWITCH is a trademark of STMicroelectronics
November 1999 - Ed: 4C
1/8
STTA12006TV1/2 / STTA6006P
THERMAL AND POWER DATA (Per diode)
Symbol
Parameter
Test conditions
Per diode
Value
0.85
0.47
0.1
Unit
Rth(j-c)
Junction to case thermal resistance
°C/W
Total
Coupling
Tc= 64°C
Tc= 58°C
Tc= 54°C
Tc= 48°C
P1
Conduction power dissipation
F(AV) = 60A δ =0.5
SOD93
ISOTOP
SOD93
ISOTOP
108
W
W
I
Pmax
Total power dissipation
Pmax = P1 + P3 (P3 = 10% P1)
120
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
Min
Typ
1.25
5
Max
Unit
VF *
Forward voltage drop
IF =60A
Tj = 25°C
1.75
1.5
V
V
Tj = 125°C
IR **
Reverse leakage current
VR =0.8 x Tj = 25°C
200
12
µA
mA
VRRM
Tj = 125°C
Vto
Threshold voltage
Dynamic resistance
Ip < 3.IAV Tj = 125°C
1.14
6
V
rd
mΩ
Test pulses :
* tp = 380 µs, δ < 2%
** tp = 5 ms, δ < 2%
To evaluate the maxim2um conduction losses use the following equation :
P = Vto x IF(AV) + rd x IF (RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING
Symbol
Parameter
Test conditions
Tj = 25°C
IF = 0.5 A IR = 1A
Min
Typ
Max
Unit
trr
Reverse recovery
time
ns
Irr = 0.25A
45
IF = 1 A dIF/dt =-50A/µs VR =30V
80
38
IRM
Maximum reverse
recovery current
Tj = 125°C VR = 400V IF =60A
dIF/dt = -480 A/µs
A
/
dIF/dt = -500 A/µs
24
S factor
Softness factor
Tj = 125°C VR = 400V
IF =60A
dIF/dt = -500 A/µs
0.37
TURN-ON SWITCHING
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
tfr
Forward recovery
time
Tj = 25°C
IF =60 A, dIF/dt = 480 A/µs
measured at, 1.1 × VFmax
ns
700
VFp
Peak forward voltage Tj = 25°C
IF =60A, dIF/dt = 480 A/µs
V
14
2/8
STTA12006TV1/2 / STTA6006P
Fig. 1: Conduction losses versus average current.
Fig. 2: Forward voltage drop versus forward
current.
P1(W)
120
VFM(V)
3.50
T
=0.2
=0.1
MAXIMUM VALUES
3.00
100
80
60
40
20
0
2.50
=tp/T
tp
Tj=125oC
2.00
1.50
1.00
= 1
=0.5
0.50
IFM(A)
IF(av)(A)
10 15 20 25 30 35 40 45 50 55 60
0.00
1
10
100
1000
0
5
Fig. 3: Relative variation of thermal transient
impedance junction to case versus pulse duration.
Fig. 4: Peak reverse recovery current versus
dI /dt.
F
IRM(A)
55
50
45
40
35
30
25
20
15
10
5
90% CONFIDENCE Tj=125oC
VR=400V
IF=120A
IF=60A
IF=30A
dIF/dt(A/ s)
100 200 300 400 500 600 700 800 900 1000
0
0
Fig. 5: Reverse recovery time versus dI /dt.
Fig. 6: Softness factor (tb/ta) versus dI /dt.
F
F
S factor
0.80
0.75
trr(ns)
350
325
300
275
250
90% CONFIDENCE Tj=125oC
Typical values Tj=125 oC
VR=400V
IF<2xIF(av)
VR=400V
0.70
0.65
0.60
0.55
0.50
0.45
0.40
0.35
0.30
0.25
0.20
225
200
175
150
125
100
75
IF=120A
IF=60A
IF=30A
dIF/dt(A/ s)
dIF/dt(A/ s)
100 200 300 400 500 600 700 800 900 1000
50
0
0
100 200 300 400 500 600 700 800 9001000
3/8
STTA12006TV1/2 / STTA6006P
Fig. 7: Relative variation of dynamic parameters
versus junction temperature (reference Tj=125°C).
Fig. 8: Transient peak forward voltage versus
dI /dt.
F
VFP(V)
4.0
3.8
3.5
3.3
3.0
2.8
2.5
25.0
22.5
20.0
17.5
15.0
12.5
10.0
7.5
90% CONFIDENCE Tj=125oC
IF=IF(av)
S factor
2.3
2.0
1.8
1.5
1.3
1.0
0.8
5.0
IRM
2.5
dIF/dt(A/ s)
Tj(oC)
0.5
0.0
0
25
50
75
100
125
150
0
200
400
600
800
1000 1200
Fig. 9: Forward recovery time versus dI /dt.
F
tfr(ns)
1000
90% CONFIDENCE Tj=125oC
900
VFr=1.1*VF max.
800
IF=IF(av)
700
600
500
400
300
200
100
dIF/dt(A/ s)
0
0
200
400
600
800
1000 1200
4/8
STTA12006TV1/2 / STTA6006P
APPLICATION DATA
The TURBOSWITCH is especially designed to
provide the lowest overall power losses in any
transistor, thus optimizing the overall performance
in the end application.
The way of calculating the power losses is given
below:
"FREEWHEEL
Mode"
application
(Fig.A)
considering both the diode and the companion
TOTAL LOSSES
due to the diode
P = P1+ P2+ P3+ P4+ P5 Watts
CONDUCTION
LOSSES
REVERSE
LOSSES
SWITCHING
LOSSES
SWITCHING
LOSSES
in the diode
in the diode
in the diode
in the tansistor
due to the diode
Fig. A : "FREEWHEEL" MODE.
SWITCHING
TRANSISTOR
IL
DIODE:
TURBOSWITCH
V
R
t
T
F = 1/T
= t/T
LOAD
5/8
STTA12006TV1/2 / STTA6006P
APPLICATION DATA (Cont’d)
Fig. B: STATIC CHARACTERISTICS
Conduction losses :
P1 = V . I + R . I
F (RMS)
I
2
t0 F(AV)
d
I
F
Rd
V
R
V
V
V
tO
F
I
R
Reverse losses :
P2 = V . I . (1 - δ)
R
R
Fig. C: TURN-OFF CHARACTERISTICS
V
Turn-on losses :
(in the transistor, due to the diode)
IL
TRANSISTOR
VR × IRM 2 × ( 3 + 2 × S ) × F
I
t
P5 =
6 x dIF ⁄ dt
VR × IRM × IL × ( S + 2 ) × F
2 x dIF ⁄ dt
+
I
dI /dt
DIODE
F
Turn-off losses (in the diode) :
VR × IRM 2 × S × F
ta tb
V
t
P3 =
6 x dIF ⁄ dt
dI /dt
R
I
RM
VR
P3 and P5 are suitable for power MOSFET and
IGBT
trr = ta + tb
S = tb / ta
Fig. D: TURN-ON CHARACTERISTICS
I
F
I
Fmax
dI /dt
F
0
t
Turn-on losses :
V
F
P4 = 0.4 (V - V ) . I . t . F
Fmax fr
FP
F
V
Fp
V
F
1.1V
F
0
t
tfr
6/8
STTA12006TV1/2 / STTA6006P
DIMENSIONS
PACKAGE MECHANICAL DATA
SOD93
REF.
Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
A
C
4.70
1.17
4.90 0.185
1.37 0.046
0.193
0.054
D
2.50
1.27
0.098
0.050
D1
E
0.50
1.10
0.78 0.020
1.30 0.043
0.031
0.051
F
F3
G
1.75
0.069
10.80
14.70
11.10 0.425
15.20 0.578
12.20
0.437
0.598
0.480
0.638
H
L
L2
L3
16.20
18.0
0.709
1.220
L5 3.95
L6
4.15 0.156
4.10 0.157
0.163
0.161
31.00
O
4.00
Cooling method : by conduction (C)
Recommended torque value : 0.8 m.N
Maximum torque value : 1m.N
7/8
STTA12006TV1/2 / STTA6006P
PACKAGE MECHANICAL DATA
ISOTOP
DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
11.80 12.20 0.465 0.480
REF.
A
A1
B
8.90
7.8
9.10
8.20
0.85
2.05
0.350 0.358
0.307 0.323
0.030 0.033
0.077 0.081
C
0.75
1.95
C2
D
37.80 38.20 1.488 1.504
31.50 31.70 1.240 1.248
25.15 25.50 0.990 1.004
23.85 24.15 0.939 0.951
D1
E
E1
E2
G
24.80 typ.
0.976 typ.
14.90 15.10 0.587 0.594
12.60 12.80 0.496 0.504
G1
G2
F
3.50
4.10
4.60
4.00
4.00
4.30
4.30
5.00
4.30
4.40
0.138 0.169
0.161 0.169
0.181 0.197
F1
P
0.157
0.69
P1
S
0.157 0.173
30.10 30.30 1.185 1.193
Cooling method : by conduction (C)
Ordering type
Marking
Package
SOD93
Weight
Base qty
Delivery mode
Tube
STTA6006P
STTA6006P
3.79g
30
10
10
STTA12006TV1 STTA12006TV1
STTA12006TV2 STTA12006TV2
Epoxy meets UL94,V0
ISOTOP
ISOTOP
27g
without screws
Tube
Tube
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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