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STTH12003 [ETC]

HIGH FREQUENCY SECONDARY RECTIFIER ; 高频次级整流\n
STTH12003
型号： STTH12003
厂家： ETC    ETC
描述：

HIGH FREQUENCY SECONDARY RECTIFIER
高频次级整流\n
文件： 总5页 (文件大小：127K)
中文：  中文翻译
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®
STTH12003TV  
HIGH FREQUENCY SECONDARY RECTIFIER  
MAJOR PRODUCT CHARACTERISTICS  
IF(AV)  
2 x 60 A  
300 V  
150 °C  
1 V  
K1  
K2  
A1  
A2  
VRRM  
Tj (max)  
VF (max)  
trr (max)  
K1  
70 ns  
A1  
K2  
FEATURES AND BENEFITS  
A2  
COMBINES HIGHEST RECOVERY AND  
REVERSE VOLTAGE PERFORMANCE  
ULTRA-FAST, SOFT AND NOISE-FREE  
RECOVERY  
ISOTOP  
INSULATED PACKAGE: ISOTOP  
Insulated voltage: 2500 VRMS  
Capacitance: < 45 pF  
LOW INDUCTANCE AND LOW CAPACITANCE  
ALLOW SIMPLIFIED LAYOUT  
DESCRIPTION  
Dual rectifiers suited for Switch Mode Power  
Supply and high frequency DC to DC converters.  
Packaged in ISOTOP, this device is intended for  
use in low voltage, high frequency inverters, free  
wheeling operation, welding equipment and  
telecom power supplies.  
ABSOLUTE RATINGS (limiting values, per diode)  
Symbol  
Parameter  
Repetitive peak reverse voltage  
Value  
Unit  
VRRM  
300  
V
IF(RMS)  
IF(AV)  
150  
A
A
RMS forward current  
60  
120  
Average forward current  
Tc = 85°C  
δ = 0.5  
Per diode  
Per device  
IFSM  
IRSM  
Tstg  
Tj  
600  
A
A
Surge non repetitive forward current  
Non repetitive peak reverse current  
Storage temperature range  
tp = 10 ms sinusoidal  
5
tp = 100 µs square  
- 55 to + 150  
150  
°C  
°C  
Maximum operating junction temperature  
ISOTOP is a registered trademark of STMicroelectronics  
October 1999 - Ed: 4D  
1/5  
STTH12003TV  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
Unit  
Rth (j-c)  
0.8  
0.45  
°C/W  
Junction to case  
Per diode  
Total  
Rth (c)  
0.1  
Coupling  
When the diodes 1 and 2 are used simultaneously:  
∆Tj (diode 1) = P (diode 1) x Rth(j-c) (per diode) + P (diode 2) x Rth(C)  
STATIC ELECTRICAL CHARACTERISTICS (per diode)  
Symbol  
Parameter  
Tests conditions  
Min. Typ. Max.  
Unit  
IR *  
120  
µA  
Reverse leakage  
current  
VR = 300 V  
Tj = 25°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
0.12  
0.85  
1.2  
1.25  
1
mA  
V
VF **  
Forward voltage drop IF = 60 A  
Pulse test : * tp = 5 ms, δ < 2 %  
** tp = 380 µs, δ < 2%  
To evaluate the maximum conduction losses use the following equation:  
2
P = 0.75 x IF(AV) + 0.0042 x IF (RMS)  
RECOVERY CHARACTERISTICS  
Symbol  
Tests conditions  
Irr = 0.25 A IR = 1A  
Min. Typ. Max.  
Unit  
trr  
55  
ns  
IF = 0.5 A  
IF = 1 A  
Tj = 25°C  
Tj = 25°C  
Tj = 25°C  
Tj = 25°C  
Tj = 125°C  
70  
600  
5
dIF/dt = - 50 A/µs VR = 30 V  
dIF/dt = 200 A/µs  
tfr  
ns  
V
IF = 60 A  
VFP  
VFR = 1.1 x VF max.  
Sfactor  
IRM  
0.3  
14  
-
Vcc = 200 V  
IF = 60 A  
dIF/dt = 200 A/µs  
A
2/5  
STTH12003TV  
Fig. 1: Conduction losses versus average current  
(per diode).  
Fig. 2: Forward voltage drop versus forward  
current (per diode).  
P1(W)  
IFM(A)  
90  
600  
Tj=125°C  
Typical values  
δ = 0.5  
δ = 0.2  
δ = 0.1  
80  
70  
60  
50  
40  
30  
20  
10  
0
δ = 0.05  
Tj=25°C  
Maximum values  
100  
δ = 1  
Tj=125°C  
Maximum values  
10  
T
VFM(V)  
IF(av) (A)  
30 40  
tp  
=tp/T  
δ
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6  
0
10  
20  
50  
60  
70  
80  
Fig. 3: Relative variation of thermal impedance  
junction to case versus pulse duration.  
Fig. 4: Peak reverse recovery current versus  
dIF/dt (90% confidence, per diode).  
Zth(j-c)/Rth(j-c)  
IRM(A)  
1.0  
30  
VR=200V  
IF=2*IF(av)  
Tj=125°C  
25  
0.8  
IF=IF(av)  
20  
δ = 0.5  
0.6  
15  
IF=0.5*IF(av)  
0.4  
δ = 0.2  
10  
5
δ = 0.1  
T
0.2  
Single pulse  
tp(s)  
dIF/dt(A/µs)  
tp  
=tp/T  
δ
0.0  
1E-3  
0
1E-2  
1E-1  
1E+0  
1E+1  
0
50 100 150 200 250 300 350 400 450 500  
Fig. 5: Reverse recovery time versus dIF/dt (90%  
confidence, per diode).  
Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical  
values, per diode).  
trr(ns)  
S factor  
200  
180  
160  
140  
120  
100  
80  
60  
40  
0.6  
VR=200V  
Tj=125°C  
VR=200V  
Tj=125°C  
0.5  
IF=2*IF(av)  
0.4  
0.3  
0.2  
IF=IF(av)  
IF=0.5*IF(av)  
0.1  
20  
dIF/dt(A/µs)  
dIF/dt(A/µs)  
0.0  
0
0
50 100 150 200 250 300 350 400 450 500  
0
50 100 150 200 250 300 350 400 450 500  
3/5  
STTH12003TV  
Fig. 7: Relative variation of dynamic parameters  
versus junction temperature (reference: Tj = 125°C).  
Fig. 8: Transient peak forward voltage versus  
dIF/dt (90% confidence, per diode).  
VFP(V)  
2.4  
2.2  
2.0  
10  
IF=IF(av)  
Tj=125°C  
S factor  
1.8  
8
6
4
2
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
IRM  
0.2  
0.0  
Tj(°C)  
dIF/dt(A/µs)  
0
25  
50  
75  
100  
125  
0
50 100 150 200 250 300 350 400 450 500  
Fig. 9: Forward recovery time versus dIF/dt (90%  
confidence, per diode).  
tfr(ns)  
500  
IF=IF(av)  
VFR=1.1*VFmax  
Tj=125°C  
400  
300  
200  
100  
dIF/dt(A/µs)  
0
0
50 100 150 200 250 300 350 400 450 500  
4/5  
STTH12003TV  
PACKAGE MECHANICAL DATA  
ISOTOP  
DIMENSIONS  
Millimeters Inches  
Min. Max. Min. Max.  
11.80 12.20 0.465 0.480  
REF.  
A
A1  
B
C
C2  
D
D1  
E
E1  
E2  
G
G1  
G2  
F
F1  
P
8.90  
7.8  
0.75  
1.95  
9.10 0.350 0.358  
8.20 0.307 0.323  
0.85 0.030 0.033  
2.05 0.077 0.081  
37.80 38.20 1.488 1.504  
31.50 31.70 1.240 1.248  
25.15 25.50 0.990 1.004  
23.85 24.15 0.939 0.951  
24.80 typ.  
0.976 typ.  
14.90 15.10 0.587 0.594  
12.60 12.80 0.496 0.504  
3.50  
4.10  
4.60  
4.00  
4.00  
4.30 0.138 0.169  
4.30 0.161 0.169  
5.00 0.181 0.197  
4.30 0.157 0.69  
4.40 0.157 0.173  
P1  
S
30.10 30.30 1.185 1.193  
Ordering code  
Marking  
Package  
Weight  
Base qty  
Delivery mode  
STTH12003TV1 STTH12003TV  
ISOTOP  
27g  
without screws  
10  
Tube  
with screws  
Cooling method: by conduction (C)  
Recommended torque value: 1.3 N.m.  
Maximum torque value: 1.5 N.m.  
Epoxy meets UL 94,V0  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of  
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by  
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to  
change without notice. This publication supersedes and replaces all information previously supplied.  
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-  
proval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia  
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.  
http://www.st.com  
5/5  

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