SUB75N04-05L [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 75A I(D) | TO-263AB ; 晶体管| MOSFET | N沟道| 40V V（ BR ） DSS | 75A I（ D） | TO- 263AB\n
| 型号： | SUB75N04-05L |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 75A I(D) | TO-263AB
|
| 文件： | 总4页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUP/SUB75N04-05L
Vishay Siliconix
N-Channel 40-V (D-S), 175_C MOSFET, Logic Level
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (W)
ID (A)
a
0.0055 @ V = 10 V
75
GS
40
a
0.0065 @ V = 4.5 V
GS
75
D
TO-220AB
TO-263
G
DRAIN connected to TAB
G
D S
Top View
G D S
S
SUB75N04-05L
Top View
N-Channel MOSFET
SUP75N04-05L
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
C
Parameter
Symbol
Limit
Unit
Gate-Source Voltage
V
GS
"20
V
a
T
= 25_C
75
C
Continuous Drain Current
I
D
(T = 175_C)
J
T
= 125_C
55
240
75
C
A
Pulsed Drain Current
I
DM
Avalanche Current
I
AR
b
Repetitive Avalanche Energy
L = 0.1 mH
E
AR
280
mJ
c
T
= 25_C (TO-220AB and TO-263)
250
C
Power Dissipation
P
W
D
d
T
A
= 25_C (TO-263)
3.7
Operating Junction and Storage Temperature Range
T , T
J
–55 to 175
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
d
PCB Mount (TO-263)
40
62.5
0.6
Junction-to-Ambient
Junction-to-Case
R
thJA
R
thJC
Free Air (TO-220AB)
_C/W
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 70774
S-05110—Rev. F, 10-Dec-01
www.vishay.com
2-1
SUP/SUB75N04-05L
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
V
= 0 V, I = 250 mA
40
(BR)DSS
GS
D
V
V
V
DS
= V , I = 250 mA
1.0
3.0
"100
1
GS(th)
GS
D
I
V
DS
= 0 V, V = "20 V
nA
GSS
GS
V
= 40 V, V = 0 V
GS
DS
V
V
= 40 V V = 0 V, T = 125_C
50
Zero Gate Voltage Drain Current
I
mA
DS
,
GS
J
DSS
= 40 V, V = 0 V, T = 175_C
250
DS
GS
J
a
On-State Drain Current
I
V
DS
= 5 V, V = 10 V
120
A
D(on)
GS
V
= 10 V, I = 75 A
0.0044
0.0054
0.0055
0.0065
0.0091
0.011
GS
D
V
GS
= 4.5 V, I = 75 A
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
GS
= 10 V, I = 30 A, T = 125_C
D
J
V
GS
= 10 V, I = 30 A, T = 175_C
D
J
a
Forward Transconductance
g
fs
V
= 15 V, I = 30 A
30
S
DS
D
Dynamicb
Input Capacitance
C
6400
1700
700
130
20
iss
Output Capacitance
C
oss
V
= 0 V, V = 20 V, f = 1 MHz
DS
pF
nC
GS
Reverse Transfer Capacitance
C
rss
c
Total Gate Charge
Q
200
g
c
Gate-Source Charge
Q
Q
V
DS
= 30 V V = 10 V, I = 75 A
gs
gd
,
GS
D
c
Gate-Drain Charge
30
c
Turn-On Delay Time
t
15
30
d(on)
c
Rise Time
t
60
120
260
140
r
V
= 30 V, R = 0.47 W
L
= 10 V, R = 2.5 W
GEN G
DD
ns
c
I
D
^ 75 A, V
Turn-Off Delay Time
t
130
70
d(off)
c
Fall Time
t
f
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
I
75
240
1.3
120
8
S
A
Pulsed Current
I
SM
a
Forward Voltage
V
SD
I
F
= 75 A , V = 0 V
1.0
65
V
ns
A
GS
Reverse Recovery Time
t
rr
RM(REC)
Peak Reverse Recovery Current
Reverse Recovery Charge
I
4
I
F
= 75 A, di/dt = 100 A/ms
Q
0.13
26
mC
rr
Notes
a. Pulse test: pulse width v 300 msec, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Document Number: 70774
www.vishay.com
S-05110—Rev. F, 10-Dec-01
2-2
SUP/SUB75N04-05L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
250
250
200
150
100
50
V
GS
= 10 through 5 V
200
150
100
50
4 V
T
= 125_C
C
3 V
2 V
25_C
–55_C
0
0
0
2
4
6
8
10
0
1
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
200
160
120
80
0.008
0.006
0.004
0.002
0.000
T
= –55_C
C
V
GS
= 4.5 V
25_C
V
GS
= 10 V
125_C
40
0
0
20
40
60
80
100
0
20
40
60
80
100
120
I
D
– Drain Current (A)
I
D
– Drain Current (A)
Capacitance
Gate Charge
7000
6000
5000
4000
3000
2000
1000
0
20
16
12
8
V
= 20 V
= 75 A
DS
I
D
C
iss
4
C
oss
C
rss
0
0
10
20
30
40
50
60
0
50
100
150
200
250
V
DS
– Drain-to-Source Voltage (V)
Q
g
– Total Gate Charge (nC)
Document Number: 70774
S-05110—Rev. F, 10-Dec-01
www.vishay.com
2-3
SUP/SUB75N04-05L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistancevs. Junction Temperature
Source-Drain Diode Forward Voltage
2.5
100
10
1
V
= 10 V
= 30 A
GS
I
D
2.0
1.5
1.0
0.5
0.0
T
= 150_C
J
T
= 25_C
J
–50 –25
0
25
50
75
100 125 150
0
0.3
0.6
0.9
1.2
1.5
T
– Junction Temperature (_C)
V
SD
– Source-to-Drain Voltage (V)
J
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
Safe Operating Area
500
100
100
80
60
40
20
0
10 ms
Limited
by r
DS(on)
100 ms
1 ms
10
10 ms
T
= 25_C
C
Single Pulse
100 ms
dc
1
0.1
0
25
50
75
100
125
150
175
1
10
100
V
DS
– Drain-to-Source Voltage (V)
T
A
– Ambient Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–5
–4
–3
–2
–1
10
10
10
10
Square Wave Pulse Duration (sec)
10
1
3
Document Number: 70774
www.vishay.com
S-05110—Rev. F, 10-Dec-01
2-4
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