T24C08A [ETC]
T24C02A;型号: | T24C08A |
厂家: | ETC |
描述: | T24C02A |
文件: | 总14页 (文件大小:340K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Shenzhen First-Rank Technology Co., Ltd
深圳市广
子有限公司
http://www.liveic.cn
http://ghcom.dzsc.com
系 人:
,叶
: 0755-82534577,13686868407
系
SPECIFICATION
T24C02A/T24C04A/T24C08A/T24C16A
Version 1.1
reserves the right to change this documentation without prior notice.
Shenzhen First- Rank Technology Co., Ltd
Version: 1.1
Date: 02, Jul. 2007
Page: 1 of 15
▉Pin Descriptions
Table 1: Pin Configuration
Pi
Pin Designation
A0 - A2
SDA
Type
I
I/O & Open-drain
Name and Functions
Address Inputs
Serial Data
SCL
WP
GND
I
I
P
Serial Clock Input
Write Protect
Ground
VCC
NC
P
NC
Power Supply
No Connect
N
▉Block Diagram
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Version: 1.1
Date: 02, Jul. 2007
Page: 3 of 15
▉Pin Descriptions
DEVICE/PAGE ADDRESSES (A2, A1 and A0): The A2, A1 and A0 pins are device address inputs
that are hard wired for the T24C02A. Eight 2K devices may be addressed on a single bus system
(device addressing is discussed in detail under the Device Addressing section).
The T24C04A uses the A2 and A1 inputs for hard wire addressing and a total of four 4K devices may
be addressed on a single bus system. The A0 pin is a no connect and can be connected to ground.
The T24C08A only uses the A2 input for hardwire addressing and a total of two 8K devices may be
addressed on a single bus system. The A0 and A1 pins are no connects and can be connected to
ground.
The T24C16A does not use the device address pins, which limits the number of devices on a single
bus to one. The A0, A1 and A2 pins are no connects and can be connected to ground.
SERIAL DATA (SDA): The SDA pin is bi-directional for serial data transfer. This pin is open-drain
driven and may be wire-ORed with any number of other open-drain or open- collector devices.
SERIAL CLOCK (SCL): The SCL input is used to positive edge clock data into each EEPROM
device and negative edge clock data out of each device.
WRITE PROTECT (WP): The T24C02A/T24C04A/T24C08A/T24C16A has a Write Protect pin
that provides hardware data protection. The Write Protect pin allows normal read/write operations
when connected to ground (GND). When the Write Protect pin is connected to VCC, the write
protection feature is enabled and operates as shown in the following Table 2.
Table 2: Write Protect
Part of the Array Protected
WP Pin Status
T24C02A
T24C04A
T24C08A
T24C16A
At VCC
At GND
Full (2K) Array
Full (4K) Array
Full (8K) Array
Full (16K) Array
Normal Read/Write Operations
▉Memory Organization
T24C02A, 2K SERIAL EEPROM: Internally organized with 32 pages of 8 bytes each, the 2K
requires an 8-bit data word address for random word addressing.
T24C04A, 4K SERIAL EEPROM: Internally organized with 32 pages of 16 bytes each, the 4K
requires a 9-bit data word address for random word addressing.
T24C08A, 8K SERIAL EEPROM: Internally organized with 64 pages of 16 bytes each, the 8K
requires a 10-bit data word address for random word addressing.
T24C16A, 16K SERIAL EEPROM: Internally organized with 128 pages of 16 bytes each, the 16K
requires an 11-bit data word address for random word addressing.
▉Device Operation
CLOCK and DATA TRANSITIONS: The SDA pin is normally pulled high with an external device.
Data on the SDA pin may change only during SCL low time periods (see to Figure 1 on page 5). Data
changes during SCL high periods will indicate a start or stop condition as defined below.
START CONDITION: A high-to-low transition of SDA with SCL high is a start condition which
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must precede any other command (see to Figure 2 on page 5).
STOP CONDITION: A low-to-high transition of SDA with SCL high is a stop condition. After a
read sequence, the stop command will place the EEPROM in a standby power mode (see Figure 2 on
page 5).
ACKNOWLEDGE: All addresses and data words are serially transmitted to and from the EEPROM
in 8-bit words. The EEPROM sends a "0" to acknowledge that it has received each word. This
happens during the ninth clock cycle.
STANDBY MODE: The T24C02A/T24C04A/T24C08A/T24C16A features a low-power standby
mode which is enabled: (a) upon power-up and (b) after the receipt of the STOP bit and the
completion of any internal operations.
MEMORY RESET: After an interruption in protocol, power loss or system reset, any two-wire part
can be reset by following these steps:
1. Clock up to 9 cycles.
2. Look for SDA high in each cycle while SCL is high.
3. Create a start condition.
●
Figure 1: Data Validity
l
Figure 2: Start and Stop Definition
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● Figure 3: Output Acknowledge
▉Device Addressing
The 2K, 4K, 8K and 16K EEPROM devices all require an 8-bit device address word following a start
condition to enable the chip for a read or write operation (see to Figure 4 on page 8).
The device address word consists of a mandatory "1", "0" sequence for the first four most significant
bits as shown. This is common to all the Serial EEPROM devices.
The next 3 bits are the A2, A1 and A0 device address bits for the 2K EEPROM. These 3 bits must
compare to their corresponding hardwired input pins.
The 4K EEPROM only uses the A2 and A1 device address bits with the third bit being a memory page
address bit. The two device address bits must compare to their corresponding hardwired input pins.
The A0 pin is no connect.
The 8K EEPROM only uses the A2 device address bit with the next 2 bits being for memory page
addressing. The A2 bit must compare to its corresponding hard-wired input pin. The A1 and A0 pins
are no connect.
The 16K does not use any device address bits but instead the 3 bits are used for memory page
addressing. These page addressing bits on the 4K, 8K and 16K devices should be considered the most
significant bits of the data word address which follows. The A0, A1 and A2 pins are no connect.
The eighth bit of the device address is the read/write operation select bit. A read operation is initiated
if this bit is high and a write operation is initiated if this bit is low.
Upon a compare of the device address, the EEPROM will output a "0". If a compare is not made, the
chip will return to a standby state.
▉Write Operations
BYTE WRITE: A write operation requires an 8-bit data word address following the device address
word and acknowledgment. Upon receipt of this address, the EEPROM will again respond with a "0"
and then clock in the first 8-bit data word. Following receipt of the 8-bit data word, the EEPROM will
output a "0" and the addressing device, such as a microcontroller, must terminate the write sequence
with a stop condition. At this time the EEPROM enters an internally timed write cycle, tWR, to the
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nonvolatile memory. All inputs are disabled during this write cycle and the EEPROM will not respond
until the write is complete (see Figure 5 on page 7).
PAGE WRITE: The 2K EEPROM is capable of an 8-byte page write, and the 4K, 8K and 16K
devices are capable of 16-byte page writes.
A page write is initiated the same as a byte write, but the microcontroller does not send a stop
condition after the first data word is clocked in. Instead, after the EEPROM acknowledges receipt of
the first data word, the microcontroller can transmit up to seven (2K) or fifteen (4K, 8K, 16K) more
data words. The EEPROM will respond with a "0" after each data word received. The microcontroller
must terminate the page write sequence with a stop condition (see Figure 6 on page 8).
The data word address lower three (2K) or four (4K, 8K, 16K) bits are internally incremented
following the receipt of each data word. The higher data word address bits are not incremented,
retaining the memory page row location. When the word address, internally generated, reaches the
page boundary, the following byte is placed at the beginning of the same page. If more than eight (2K)
or sixteen (4K, 8K, 16K) data words are transmitted to the EEPROM, the data word address will "roll
over" and previous data will be overwritten.
ACKNOWLEDGE POLLING: Once the internally timed write cycle has started and the EEPROM
inputs are disabled, acknowledge polling can be initiated. This involves sending a start condition
followed by the device address word. The read/write bit is representative of the operation desired.
Only if the internal write cycle has completed will the EEPROM respond with a "0", allowing the read
or write sequence to continue.
▉Read Operations
Read operations are initiated the same way as write operations with the exception that the read/write
select bit in the device address word is set to "1". There are three read operations: current address read,
random address read and sequential read.
CURRENT ADDRESS READ: The internal data word address counter maintains the last address
accessed during the last read or write operation, incremented by one. This address stays valid between
operations as long as the chip power is maintained. The address "roll over" during read is from the last
byte of the last memory page to the first byte of the first page. The address "roll over" during write is
from the last byte of the current page to the first byte of the same page.
Once the device address with the read/write select bit set to "1" is clocked in and acknowledged by the
EEPROM, the current address data word is serially clocked out. The microcontroller does not respond
with an input "0" but does generate a following stop condition (see Figure 7 on page 8).
RANDOM READ: A random read requires a "dummy" byte write sequence to load in the data word
address. Once the device address word and data word address are clocked in and acknowledged by the
EEPROM, the microcontroller must generate another start condition. The microcontroller now
initiates a current address read by sending a device address with the read/write select bit high. The
EEPROM acknowledges the device address and serially clocks out the data word. The microcontroller
does not respond with a "0" but does generate a following stop condition (see Figure 8 on page 9).
SEQUENTIAL READ: Sequential reads are initiated by either a current address read or a random
address read. After the microcontroller receives a data word, it responds with an acknowledge. As
long as the EEPROM receives an acknowledge, it will continue to increment the data word address
and serially clock out sequential data words. When the memory address limit is reached, the data word
address will "roll over" and the sequential read will continue. The sequential read operation is
terminated when the microcontroller does not respond with a "0" but does generate a following stop
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Date: 02, Jul. 2007
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condition (see Figure 9 on page 9).
l Figure 4: Device Address
l
Figure 5: Byte Write
l
Figure 6: Page Write
l
Figure 7: Current Address Read
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l
Figure 8: Random Read
l
Figure 9: Sequential Read
▉Electrical Characteristics
l
Absolute Maximum Stress Ratings
DC Supply Voltage . . . . . . . . . . . . . . . . .-0.3V to +6.5V
Input / Output Voltage . . . . . . . .GND-0.3V to VCC+0.3V
Operating Ambient Temperature . . . . . -40℃ to +85℃
Storage Temperature . . . . . . . . . . . . -65℃ to +150℃
l
Comments
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to this
device. These are stress ratings only. Functional operation of this device at these or any other
conditions above those indicated in the operational sections of this specification is not implied or
intended. Exposure to the absolute maximum rating conditions for extended periods may affect device
reliability.
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▉DC Electrical Characteristics
Applicable over recommended operating range from: TA = -40℃ to +85℃, VCC = +1.8V to +5.5V
(unless otherwise noted)
Parameter
Supply Voltage
Supply Current Vcc=5.0V
Supply Current Vcc=5.0V
Standby Current
Input Leakage Current
Output Leakage Current
Input Low Level
Symbol
Vcc
Icc1
Icc2
ISB
ILI
Min.
1.8
-
-
-
-
-
Typ.
Max.
5.5
1.0
3.0
1.0
3.0
3.0
Vcc×0.3
Vcc + 0.5
Unit
V
Condition
-
0.4
2.0
-
mA
mA
uA
uA
uA
V
Read @100KHz
Write @100KHz
Vin=Vcc or GND
Vin=Vcc or GND
Vout=Vcc or GND
-
ILO
VIL
0.05
-
-
-0.6
Input High Level
VIH
V
Vcc×0.7
Output Low Level Vcc=5.0V
Output Low Level Vcc=3.0V
Output Low Level Vcc=1.8V
VOL3
VOL2
VOL1
-
-
-
-
-
-
0.4
0.4
0.2
V
V
V
IOL=3.0mA
IOL=2.1mA
IOL=0.15mA
▉Pin Capacitance
Applicable over recommended operating range from TA = 25℃, f = 1.0 MHz, VCC = +1.8V
Parameter
Input/Output Capacitance (SDA)
Input Capacitance (A0, A1, A2, SCL)
Symbol
CI/O
CIN
Min.
-
-
Typ.
-
-
Max.
8
6
Unit
pF
pF
Condition
VI/O = 0V
VIN = 0V
▉AC Electrical Characteristics
Applicable over recommended operating range from TA = -40℃ to +85℃, VCC = +1.8V to +5.5V,
CL = 1 TTL Gate and 100 pF (unless otherwise noted)
1.8-volt
Typ.
-
5.0-volt
Typ.
-
Parameter
Symbol
Units
KHz
Min.
-
Max.
400
-
Min.
-
Max.
1000
-
Clock Frequency, SCL
Clock Pulse Width Low
Clock Pulse Width High
Noise Suppression Time
Clock Low to Data Out Valid
Time the bus must be free before
a new transmission can start
Start Hold Time
f
SCL
LOW
HIGH
1.2
0.6
-
-
-
-
-
0.6
0.4
-
-
-
-
-
us
us
us
us
t
t
-
-
50
0.9
40
tI
0.05
0.05
0.55
t
AA
BUF
HD.STA
SU.STA
HD.DAT
SU.DAT
1.2
-
-
0.5
-
-
us
t
0.6
0.6
0
-
-
-
-
-
-
-
-
-
-
-
0.25
-
-
-
-
-
-
-
-
-
-
-
us
t
t
t
t
Start Setup Time
-
0.25
-
us
Data In Hold Time
Data In Setup Time
Inputs Rise Time(1)
Inputs Fall Time(1)
Stop Setup Time
-
-
0
-
-
us
100
-
100
ns
0.3
300
-
-
0.3
100
-
us
tR
-
-
0.25
50
-
ns
tF
0.6
50
-
us
t
SU.STO
DH
WR
Data Out Hold Time
Write Cycle Time
5.0V, 25℃, Byte Mode
-
-
ns
t
t
5
5
ms
Endurance
1M
-
-
-
Write Cycles
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Note
1. This parameter is characterized and is not 100% tested.
2. AC measurement conditions: RL (connects to VCC): 1.3 kΩ (2.5V, 5V), 10 kΩ (1.8V)
Input pulse voltages: 0.3 VCC to 0.7 VCC
Input rise and fall time: ≤50 ns
Input and output timing reference voltages: 0.5 VCC
The value of RL should be concerned according to the actual loading on the user's system.
▉Bus Timing
Figure 10: SCL: Serial Clock, SDA: Serial Data I/O
▉Write Cycle Timing
l
Figure 11: SCL: Serial Clock, SDA: Serial Data I/O
Note
1. The write cycle time tWR is the time from a valid stop condition of a write sequence to the end of the
internal clear/write cycle.
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▉Ordering Information
Code Number
Part Number
T
24
XXX
-
X
1
2
3
4
1.Prefix
2.Series Name
4. Voltage
A=1.8V-5.5V
24:Two-wire(I2C) Interface
3.EEPROM Density
C02=2K bits
C04=4K bits
C08=8K bits
C16=16K bits
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▉Packaging Information
1. SOP
MILLIMETER
SYMBOL
MIN
NOM
MAX
1.77
0.28
1.60
0.75
0.48
0.43
0.26
0.21
5.10
6.20
4.10
-
-
A
A1
A2
A3
b
0.08
1.20
0.55
0.39
0.38
0.21
0.19
4.70
5.80
3.70
0.18
1.40
0.65
-
0.41
-
b1
c
0.20
4.90
6.00
3.90
c1
D
E
E1
e
1.27BSC
0.50
0
0.65
0.80
L
L1
θ
1.05BSC
`
-
8°
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2. PDIP
MILLIMETER
SYMBOL
MIN
3.60
0.51
3.10
1.50
0.44
0.43
NOM
3.80
-
MAX
4.00
-
A
A1
A2
A3
b
3.30
1.60
-
3.50
1.70
0.53
0.48
0.46
b1
B1
c
1.52BSC
-
0.25
0.24
9.05
6.15
0.31
0.26
9.45
6.55
0.25
9.25
6.35
c1
D
E1
e
2.54BSC
7.62BSC
-
eA
eB
eC
L
7.62
0
9.50
0.94
-
-
3.00
-
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com/
3. SOT23-5
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Page: 15 of 15
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