TH7888ACBHRB [ETC]
AREA ARRAY CCD IMAGE SENSOR 1024 X 1024 PIXELS WITH ANTIBLOOMING; 面阵CCD图像传感器1024 ×1024像素，抗光晕
| 型号： | TH7888ACBHRB |
| 厂家： | 
ETC |
| 描述： | AREA ARRAY CCD IMAGE SENSOR 1024 X 1024 PIXELS WITH ANTIBLOOMING |
| 文件： | 总16页 (文件大小：2412K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TH7888A
AREA ARRAY CCD IMAGE SENSOR
1024 × 1024 PIXELS WITH ANTIBLOOMING
n
n
n
1024 x 1024 pixels with memory zone
Up to 30 images / second
Built-in antiblooming device providing
an electronic shutter function.
n
n
n
n
n
n
Pixel : 14 mm x 14 mm
Image zone : 14,34 x 14,34 mm²
2 outputs at 20 MHz each
Readout through 1 or 2 ouputs
Possible binning 2 x 2
PIN IDENTIFICATION
Optical shield against parasitic
reflexions and stray light
Pin N°
Symbol
Designation
Y9
FP1
FP2
FP3
FP4
FM1
FM2
FM3
FM4
FM
AA9
n
n
A/R window in 400 - 700 nm bandwidth
Optional integrated Peltier cooler
Image zone clocks
Y10
AA10
Y5
AA5
Memory zone clocks
Y6
AA6
Y4
Memory to register clock
B2
FL1
A2
FL2
A3
FL3
Readout register clocks
B3
FL4
B1
FL5
A1
FL6
A9
VDD1
VDD2
VS1
Output amplifier drain supply
A8
B10
Output amplifier source
supply
B8
VS2
B7
VDP
VGS
VOS1
VOS2
FR
Protection drain bias
A6
Register output gate bias
A10
Video outputs
B9
B4
Y7
Reset clock
FA
Antiblooming gate clock
Reset bias
A7
VDR
VA
AA7
Antiblooming diode bias
A4, A5, B5, B6
Y8, AA4, AA8
AA1, AA2
VSS
VSS
PELTIER+
Substrate bias
OPTIONAL
Peltier cooler power supply
NC otherwise
Y1, Y2
Y3
PELTIER -
PT+
OPTIONAL
Figure 1 : TH7888A organization
Temperature sensor
Pt 100W DIN43760
NC otherwise
AA3
PT-
November 1999
1/16
TH7888A
DESCRIPTION
TH7888A is especially designed for high data rate applications (up to 30 pict /s in 1024x1024 format progressive scan) in
medical and industrial fields.
This area array image sensor consists of a 1024 x 1024 pixels (14 mm x 14 mm) image zone associated to a memory zone
(masked with optical shield).
In order to increase data rate, it is provided 2 separate outputs that can be used for parallel readout. (readout frequency up
to 20 MHz / output leading to a total readout frequency of 40 MHz). These two outputs allow 3 readout modes (single or
dual port readout).
TH7888A is designed with antiblooming structure providing electronic shutter capability.
Moreover the 2 x 2 binning mode is available on this sensor. In that case, the image size is 512 x 512 with 28 mm x 28 mm
pixels.
TH7888A package is sealed with a specific anti-reflective window optimized in 400-700 nm spectrum bandwidth.
OPTIONS : the device can be delivered with integrated low power Peltier cooler in order to improve sensor performances in
high temperature environments (typically + 50°C).
FUNCTIONAL DIAGRAM
Figure 1 gives the general sensor organization.
Extra dark lines are provided for use as dark references or for smearing digital correction.
Extra dark pixels are provided for line dark reference clamping.
Each frame is made of 1056 video lines :
n 1 dummy line
n 12 useful dark reference lines (with optical shield)
n 3 isolation lines
n 1024 useful lines
n 3 isolation lines
n 12 dark reference lines (with optical shield)
n 1 dummy line
Each video line is made of 546 or 1058 elements, depending on readout mode (single or dual port modes):
n 12 inactive prescan elements
n 1 isolation element
n 16 useful dark references (with optical shield)
n 5 isolation elements
n 512 or 1024 useful video pixels
2/16
TH7888A
GEOMETRICAL CHARACTERISTICS
Figure 2b : Pixel layout
Figure 2c : Cross-section AA’
ABSOLUTE MAXIMUM RATINGS
Storage temperature ............................................................................................................................................-55°C to +150°C
Operating temperature...........................................................................................................................................-40°C to +85°C
Thermal cycling...............................................................................................................................................................15°C / mn
Maximum applied voltages :
Y9, AA9, Y10, AA10, Y5, AA5, Y6, AA6, Y4, B2, A2, A3, B3, B1, A1, B4, A6.................................................-0.3 to 15 V
A9, A8, B10, B8, B7, A7, AA7 ...........................................................................................................................-0.3 V to 15.5 V
Y7..............................................................................................................................................................................-0.3 V to 12 V
A4, A5, B5, B6, Y8, AA4, AA8 ..................................................................................................................................0V (ground)
3/16
TH7888A
PELTIER OPTION
Storage temperature ..............................................................................................................................................-55°C to +85°C
Operating temperature...........................................................................................................................................-40°C to +70°C
Thermal cycling...............................................................................................................................................................10°C / mn
Maximum applied voltages :
PIN
MAX VOLTAGE RANGE
MAX CURRENT RANGE
AA1, AA2 with respect to Y1, Y2
5 V
1.8 A
Stresses above those listed under absolute maximum ratings may cause permanent device failure. Functionality at or abo-
ve these limits is not implied. Exposure to absolute maximum ratings for extended periods may affect device reliability.
Operating range defines the limits whithin which the functionality is guaranteed.
Electrical limits of applied signals are given in operating conditions section
OPERATING PRECAUTIONS
Shorting the video outputs to any other pin, even temporarily, can permanently damage the on-chip output amplifier.
OPERATING CONDITIONS
TABLE 1 - DC CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
Typ.
15
UNIT
Min.
14.5
14.5
14.5
14.5
2.2
Max.
15.5
15.5
15.5
15.5
2.8
Output amplifier drain supply
Protection drain bias
Reset bias
VDD1, VDD2
VDP
V
V
V
V
V
V
V
15
VDR
15
Antiblooming diode bias
Register output gate bias
Output amplifier source supply
Ground *
VA
15
VGS
2.5
0
VS1,2
VSS
0
OPTIONAL
Peltier power supply **
Voltage accross Peltier
I
1.1
3
A
V
PELTIER
V
PELTIER
*
Ground : note that the package metal back is internally grounded.
** Peltier power supply : conditions for 10°C sensor temperature with 50°C external temperature.
4/16
TH7888A
TIMING DIAGRAMS
Readout Mode
The serial readout register is operated in a two phase transfer mode. However, there are provided 6 separated command
electrodes that shall be connected differently depending on the required readout mode. The following table gives the con-
nections to be made for each mode:
Readout modes Ü
1 output, VOS1
1 output, VOS2
(mirror effect)
2 outputs (parallel)
Drive clocks (signals) Þ
FL1
FL2
pins B2, B3, B1
pins A2, A3, A1
pins B2, A3, A1
pins A2, B3, B1
pins B2, B3, A1
pins A2, A3, B1
The following diagrams are given for 20 MHz readout frequency, 1.25 MHz vertical transfer frequency
Figure 3 : Frame timing diagram
5/16
TH7888A
1 : 12 Inactive pre-scan elements
3 : 1024 useful video pixels (single output
3 : readout mode)
2 : 512 useful video pixels (dual output
3 : readout mode)
2 : 1 isolation element
2 : 16 dark ref pixels
2 : 5 isolation elements
Figure 4 : Line timing diagram
Figure 5 : Vertical transfer during Image to memory zone transfer
6/16
TH7888A
Figure 6 : Transfer period from image zone to memory zone (FP and FM) for 1.25 MHz vertical transfer frequency (Fv = 1 / Tv ).
t1 = 7 ns typ.
t2 = 5 ns typ.
td = 8 ns typical delay time
Figure 7 : Output diagram for readout register and reset clock 20 MHz applications. Cross over of complementary clocks (F L1, F L2)
Figure 7 : between 30% and 70 % of max. amplitude.
7/16
TH7888A
BINNING MODE OPERATION
In this mode, the image is composed of 512 x 512 pixels (28 mm x 28 mm each).
Fall times & rise times : see fig. 6& 7
Figure 8 : Summation in the readout register of 2 adjacent lines.
Figure 9 : Summation of 2 adjacent pixels
In binning mode operation, maximum level of elementary pixel (14 x 14 mm) is reduced to Vsat / 4.
8/16
TH7888A
EXPOSURE TIME REDUCTION
TH7888A allows exposure time control (electronic shutter function).
The exposure time reduction is achieved by pulsing all the FPi gates to 0 volt so as to remove continuously all the photoge-
nerated electrons through antiblooming drain VA.
Fall times & rise times : see fig. 5 & 6
Figure 10 : Timing diagram for electronic shutter
TABLE 2 - DRIVE CLOCK CHARACTERISTICS
Parameter
Image zone clocks
Symbol
Value
Typ
Unit
Remarks
Min
Max
FP1,2, 3,4
Typical input capacitance
15 nF
High level
Low level
7.5
0
8
8.5
0.8
V
V
See figure 11
0.5
Memory zone clocks
Memory to register clocks
Antiblooming gate
FM1,2,3,4
FM
Typical input capacitance
15.5 nF
High level
Low level
7.5
0
8
8.5
0.8
V
V
See figure 11
0.5
Typical input capacitance
10 pF
High level
Low level
8.5
0
9
9.5
0.8
V
V
0.5
FA
Typical input capacitance
14 nF
High level (integration)
Low level (transfer)
3
0
4
7
V
V
See figures 11 & 13
0.5
0.8
Reset gate
FR
Typical input capacitance
10 pF
High level
Low level
10
0
12
2
13
3
V
V
Readout register clocks
FL1,2
High level
Low level
8.5
0
9
9.5
0.8
23
V
V
0.5
20
Maximum readout register frequency
F
F
MHz
See figure 7
See figure 12
H
Image zone to memory zone transfer
frequency
1.25
1.7
MHz
V
9/16
TH7888A
Figure 11 : Drive clocks capacitance network
TABLE 3 - STATIC AND DYNAMIC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
TYP.
10
UNIT
REMARKS
Min.
200
5.5
Max.
250
6.5
Output amplifier supply current
Output impedance
I
mA
W
per amplifier
DD
Z
225
11
s
DC output level
V
REF
CVF
V
Output conversion factor
6
µV/ e-
10/16
TH7888A
ELECTROOPTICAL PERFORMANCE
• General conditions :
Temp = 25°C (package back temperature)
Light source : 2854K with 2 mm BG38 filter (unless specified) + F/3.5 optical aperture .
30 images per second mode (unless specified)
Typical operating conditions.
• Readout mode : 2 outputs
• Values exclude dummy elements and blemishes.
PARAMETER
SYMBOL
VALUE
TYP.
2.6
UNIT
REMARKS
Min.
2.3
Max.
Output register saturation level
Pixel saturation level
V
reg
V
V
SAT
V
1.6
1.9
2.2
Note 1
SAT
Pixel saturation charge (electron per pixel)
Q
270
320
370
ke-
SAT
R
Responsivity at 640 nm
Responsivity with BG38 filter
6.5
11
V/µJ/cm²
mV/lux
Quantum efficiency at 640 nm
Photo response non uniformity (1s)
Dark signal non uniformity (1s)
Average dark signal
QE
15
1.3
0.28
2
%
% VOS
mV
see fig.15
PRNU
DSNU
1.7
0.4
3
Note 2
Note 3
Note 4
Note 5
Note 6
Note 7
Note 8
Note 9
V
mV
DS
4
5.6
mV
Temporal RMS noise in darkness (Last line)
Dynamic range
V
200
80
µV
N
D
dB
Horizontal modulation transfer function at 500 nm
Vertical charge transfer inefficiency
Horizontal charge transfer inefficiency
MTF
VCTI
HCTI
70
%
-5
2.10
7.10
-5
Note 1 : Pixel saturation (full well) as a function of vertical transfer frequency (see figure 12) and antiblooming
Note 1 : adjustment (see figure13).
Note 2 : After subtraction of dark signal slope due to memory readout time
Note 3 : First line level referenced from inactive prescan elements (12 samples)
Note 4 : Last line level referenced from inactive prescan elements (12 samples)
Note 5 : Measured with Correlated Double Sampling (CDS) including 160 µV readout noise and dark current noise
Note 5 : in the general test conditions.
Note 6 : Saturation to RMS noise in darkness ratio.
Note 7 : At Nyquist frequency.
Note 8 : VSAT / 2 measurement and 1.25 MHz vertical transfer frequency.
Note 9 : VSAT / 2 measurement and 20 MHz horizontal transfer frequency.
11/16
TH7888A
Figure 12 : Saturation level by full well with antiblooming out (F high = 0 volt) vs the vertical transfer frequency.
A
Figure 13 : Saturation level limitation by the antiblooming effect on the pixel (Typical operating conditions)
V
TV
SMEARING
= NESAT
×
×H
V
T
SAT
I
N
= number of times E
T = integration time
I
ESAT
SAT
/ Responsivity (typical illumination
with E
conditions)
= V
T
= image to memory transfer time
V
SAT
SAT
Figure 14 : Smearing effect
12/16
TH7888A
Quantum Efficiency
Figure 15 : Spectral response.
IMAGE QUALITY GRADE
Blemish
Max area of 2 x 2 defective pixels
Clusters
Less than 7 contiguous defects in a column
Columns
More than 7 contiguous defects in a column
General conditions
Room temperature..................................................................................................................................................................25°C
Frequency .....................................................................................................................................................................30 images/s
.............................................................................................................................................................typical operating conditions
Considered image zone .............................................................................................................................................1024 x 1024
Light source ....................................................................................................2854 K with BG38 filter + F/3.5 optical aperture
At Vos =0.7 Vsat.
TYPE
Blemishes / clusters
Columns
WHITE
BLACK
a > 20 % Vos
a > 10 % Vos
êaï 30 % Vos
êaï 10 % Vos
In darkness
Blemishes / clusters
a > 10 mV (*)
a > 5 mV (*)
Columns
(*) reference is Vo : average darkness signal
Number of defects
Total pixel number affected by blemishes and clusters:.......................................................................................................100
Maximum number of clusters:.....................................................................................................................................................10
Maximum number of columns:......................................................................................................................................................5
a : amplitude of video signal of defect with respect to mean output voltage Vos
Ordering code :
TH7888AVRHRB
TH7888ACBHRB (OPTIONAL: with integrated Peltier cooler)
13/16
TH7888A
PACKAGE OUTLINE DRAWING (standard)
*
*
Ø3.04 ±0.04
0.5
*
Legend
All values are in mm.
1 : black alumina 40 pins PGA package
2 : black optical mask
3 : 400nm - 700 nm AR coated window (R<1 % per side)
4 : Metal back, (CuW - copper tungsten) gold plated. Electrically grounded (VSS).
5 : Optical center.
6 : first useful pixel (readout through V
7 : mechanical reference
)
OS1
Mechanical
distance
Optical
distance
Z
2.82 ±0.31
1.68 ±0.15
2.31 ±0.29
2.19 ±0.17
top
Z
bottom
14/16
TH7888A
PACKAGE OUTLINE DRAWING (Peltier option)
*
*
Ø3H8
0.5
*
Legend
All values are in mm.
1 : black alumina 40 pins PGA package
2 : black optical mask
3 : 400nm - 700 nm AR coated window (R<1 % per side)
4 : Metal part with integrated Peltier element.
5 : Metal back, (CuW - copper tungsten) gold plated. Electrically grounded (VSS).
6 : Optical center.
7 : first useful pixel (readout through V
8 : mechanical reference
)
OS1
Mechanical
distance
Optical
distance
2.48 ±0.58
5.00 ±0.33
Z
2.98 ±0.68
4.50 ±0.32
top
Z
bottom
15/16
TH7888A
Information furnished is believed to be accurate and reliable. However THOMSON-CSF SEMICONDUCTEURS SPECIFIQUES
assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of
third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent
rights of THOMSON-CSF SEMICONDUCTEURS SPECIFIQUES. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. THOMSON-CSF
SEMICONDUCTEURS SPECIFIQUES products are not authorized for use as critical components in life support devices
or systems without express written approval from THOMSON-CSF SEMICONDUCTEURS SPECIFIQUES.
CSF SEMICONDUCTEURS SPECIFIQUES - Printed in France - All rights reserved.
1999 THOMSON-
This product is manufactured by THOMSON-CSF SEMICONDUCTEURS SPECIFIQUES - 38521 SAINT-EGREVE / FRANCE.
For further information please contact : THOMSON-CSF SEMICONDUCTEURS SPECIFIQUES - Route Départementale
128 - B.P. 46 - 91401 ORSAY Cedex / FRANCE - Tél. : (33)(0) 1.69.33.03.24 / Téléfax : (33)(0) 1.69.33.03.21.
E-mail : monique.lafrique@tcs.thomson-csf.com - Internet : http://www.tcs.thomson-csf.com
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