TPASERIES [ETC]

TRISIL ; TRISIL\n
TPASERIES
型号: TPASERIES
厂家: ETC    ETC
描述:

TRISIL
TRISIL\n

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TPA SERIES  
TRISIL  
FEATURES  
BIDIRECTIONAL CROWBAR PROTECTION.  
VOLTAGERANGE: FROM 62 V TO 270 V.  
HOLDINGCURRENT :  
IH = 150mAmin.  
REPETITIVEPEAK PULSE CURRENT :  
IPP = 50 A, 10/1000 µs.  
F126  
SCHEMATIC DIAGRAM  
DESCRIPTION  
The TPA series are TRISIL devices especially de-  
signed for protecting sensitive telecommunication  
equipmentagainstlightning and transient voltages  
induced by AC power lines. They are available in  
the F126 axial package.  
TRISIL devices provide bidirectional protection  
by crowbar action. Their characteristic response  
to transient overvoltages makes them particularly  
suited to protect voltage sensitive telecommuni-  
cation equipment.  
Peak Surge  
Voltage  
(V)  
Voltage  
Waveform  
Current  
Waveform  
(µs)  
Admissible Necessary  
COMPLIES WITH THE  
FOLLOWING STANDARDS:  
Ipp  
(A)  
Resistor  
(µs)  
()  
(CCITT) ITU-K20  
(CCITT) ITU-K17  
VDE0433  
1000  
1500  
2000  
2000  
10/700  
10/700  
10/700  
1.2/50  
5/310  
5/310  
5/310  
1/20  
25  
38  
50  
50  
-
-
-
-
VDE0878  
IEC-1000-4-5  
level 3  
level 4  
10/700  
1.2/50  
5/310  
8/20  
50  
100  
-
-
FCC Part 68, lightning surge  
type A  
1500  
800  
10/160  
10/560  
10/160  
10/560  
75  
55  
12.5  
6.5  
FCC Part 68, lightning surge  
type B  
1000  
9/720  
5/320  
25  
-
BELLCORE TR-NWT-001089  
First level  
2500  
1000  
2/10  
10/1000  
2/10  
10/1000  
150  
50  
11.5  
10  
BELLCORE TR-NWT-001089  
Second level  
5000  
2/10  
2/10  
150  
11.5  
CNET l31-24  
1000  
0.5/700  
0.8/310  
25  
-
October 1998 - Ed: 9A  
1/5  
TPA SERIES  
ABSOLUTE MAXIMUM RATINGS(Tamb = 25 C)  
°
Symbol  
Parameter  
Value  
Unit  
W
P
Power dissipation on infinite heatsink  
Peakpulse current  
Tamb = 50 C  
1.7  
°
IPP  
10/1000 s  
50  
100  
A
µ
8/20 s  
µ
ITSM  
I2t  
Non repetitive surge peak on-state current  
I2t value for fusing  
tp = 20 ms  
tp = 20 ms  
VRM  
30  
9
A
A2s  
dV/dt  
Critical rate of rise of off-state voltage  
5
kV/ s  
µ
Tstg  
Tj  
Storagetemperaturerange  
Maximum junction temperature  
- 55 to + 150  
150  
°C  
°C  
Maximum leadtemperatureforsolderingduring 10sat 5mmfromcase  
TL  
230  
°C  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
Unit  
Rth (j-l)  
Junctionto leads(Llead = 10mm)  
60  
C/W  
°
Rth (j-a)  
100  
C/W  
°
Junction to ambient on printed circuit (Llead = 10 mm)  
ELECTRICAL CHARACTERISTICS  
(Tamb = 25°C)  
Symbol  
VRM  
IRM  
VR  
Parameter  
Stand-offvoltage  
Leakage current at stand-offvoltage  
ContinuousReverse voltage  
Breakdown voltage  
Breakovervoltage  
VBR  
VBO  
IH  
Holding current  
IBO  
Breakovercurrent  
Peak pulse current  
IPP  
Capacitance  
C
IR @ VR  
Type  
IRM @ VRM  
max.  
VBO @ IBO  
max.  
IH  
min.  
C
max.  
max.  
note 1  
note 2  
note 3  
note 4  
A
V
A
µ
V
V
mA  
mA  
pF  
µ
TPA62  
TPA68  
2
56  
61  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
62  
68  
82  
90  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
100  
100  
100  
100  
100  
100  
100  
100  
2
2
2
2
2
2
2
2
2
TPA100  
TPA120  
TPA130  
TPA180  
TPA200  
TPA220  
TPA240  
TPA270  
90  
100  
120  
130  
180  
200  
220  
240  
270  
133  
160  
173  
240  
267  
293  
320  
360  
108  
117  
162  
180  
198  
216  
243  
Note 1: IR measured at VR guarantee VBRmin VR  
Note 3: See test circuit 2.  
Note 2: Measured at 50 Hz (1 cycle) - See test circuit 1.  
Note 4: R = 1V, F = 1MHz. Refer to fig.3 for C versus VR.  
V
2/5  
TPA SERIES  
TEST CIRCUIT 1 FOR IBO and VBO parameters:  
= 20ms  
tp  
Auto  
Transformer  
220V/2A  
R1  
static  
relay.  
140  
R2  
240  
K
V
V
BO  
out  
D.U.T  
I
measure  
BO  
measure  
Transformer  
220V/800V  
5A  
TEST PROCEDURE :  
Pulse Test duration (tp = 20ms):  
- For Bidirectional devices = SwitchK is closed  
- For Unidirectional devices = Switch K is open.  
V
OUT Selection  
- Device with VBO 200 Volt  
<
- VOUT = 250 VRMS, R = 140  
.
1
- Device with VBO 200 Volt  
- VOUT = 480 VRMS, R = 240  
.
2
TEST CIRCUIT 2 for IH parameter.  
R
- V  
P
D.U.T.  
V
= - 48 V  
BAT  
Surge generator  
This is a GO-NOGO Test which allows to confirm the holdingcurrent (IH) level in a functional  
test circuit.  
TEST PROCEDURE :  
1) Adjustthe currentlevel at the IH value by short circuiting the AK of the D.U.T.  
2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 µs.  
3) The D.U.T will come back off-state within 50 ms max.  
3/5  
TPA SERIES  
Fig. 1: Non repetitive surge peak on-state current  
versus overload duration (Tj initial=25°C).  
Fig. 2: Relativevariation of holding current versus  
junction temperature.  
(A)  
TSM  
Fig. 3: Relative variation of junction capacitance  
versus reverse applied voltage (typical values).  
Note: For VRM upper than 56V, the curve is  
extrapolated(dotted line).  
Fig. 4: On-state current versus on-state voltage  
(typical values).  
IT(A)  
VR(V)  
VT(V)  
Fig. 5: Transient thermal impedance junction to  
ambient versus pulse duration (for FR4 PC Board  
withTlead = 10 mm).  
tp(s)  
4/5  
TPA SERIES  
ORDER CODE  
TPA 100 RL  
PACKAGING:  
RL = tape and reel.  
= Ammopack.  
TRISIL PROTECTION 50A  
VOLTAGE  
MARKING : Logo, Date Code, Part Number.  
PACKAGE MECHANICAL DATA  
F126Plastic  
DIMENSIONS  
Millimeters Inches  
REF.  
Min. Typ. Max. Min. Typ. Max.  
C
A
C
A
B
C
D
6.05 6.20 6.35 0.238 0.244 0.250  
2.95 3.00 3.05 0.116 0.118 0.120  
26  
31 1.024  
1.220  
D
D
B
0.76 0.81 0.86 0.030 0.032 0.034  
Weight: 0.40 g  
Packaging: Standardpackagingis in tape and reel.  
Informationfurnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of  
use of such information nor forany infringementof patents or other rights of thirdparties which may result from its use. No license is granted by  
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to  
change without notice. This publication supersedes and replaces all information previously supplied.  
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-  
proval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
1998 STMicroelectronics - Printed in Italy - All rights reserved.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco -  
The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.  
http://www.st.com  
5/5  

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