select brandShort,logo,brand from pdf_brand where id=2 limit 1 TQ1001J_技术文档

TQ1001J [ETC]

TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 30V V(BR)DSS | 560MA I(D) | DIP ; 晶体管| MOSFET | ARRAY | N沟道| 30V V（ BR ） DSS | 560MA I（ D） | DIP\n

TQ1001J


型号：	TQ1001J
厂家：	ETC
描述：	TRANSISTOR \| MOSFET \| ARRAY \| N-CHANNEL \| 30V V(BR)DSS \| 560MA I(D) \| DIP 晶体管\| MOSFET \| ARRAY \| N沟道\| 30V V（ BR ） DSS \| 560MA I（ D） \| DIP\n 晶体晶体管脉冲光电二极管
文件：	总2页 (文件大小：100K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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TQ1001J-1

Power Field-Effect Transistor, 0.56A I(D), 30V, 2.2ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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TQ1001J-2

Power Field-Effect Transistor, 0.56A I(D), 30V, 2.2ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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