TSI220B1RL [ETC]
TERMINAL SET INTERFACE PROTECTION AND DIODE BRIDGE ; 终端设定接口保护二极管桥\n
| 型号： | TSI220B1RL |
| 厂家： | 
ETC |
| 描述： | TERMINAL SET INTERFACE PROTECTION AND DIODE BRIDGE
|
| 文件： | 总9页 (文件大小：162K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSIxxB1
TERMINAL SET INTERFACE
®
Application Specific Discretes
A.S.D.™
PROTECTION AND DIODE BRIDGE
MAIN APPLICATION
Telecom equipment requiring combined
protection against transient overvoltages and
rectification by diode bridge :
■
■
■
■
■
■
Telephone set
Base station for cordless set
Fax machine
Modem
Caller Id equipment
Set top box
SO-8
DESCRIPTION
SCHEMATIC DIAGRAM
The TSIxxB1 provides the diode bridge and the
crowbar protection function that can be found in
most of telecom terminal equipment.
Integrated monolithically within a SO-8 package,
this ASD™ device allows space saving on the
board and greater reliability.
8
7
6
5
1
2
3
4
FEATURES
■
■
■
■
STAND-OFF VOLTAGE FROM 62V TO 265V
PEAK PULSE CURRENT : 30 A (10/1000 µs)
MAXIMUM DC CURRENT : IF = 0.2 A
HOLDING CURRENT :150 mA
IN ACCORDANCE WITH THE FOLLOWING
STANDARDS :
CCITT K17 - K20 10/700 µs
5/310 µs
1.5 kV
38A
BENEFITS
VDE 0433
10/700 µs
5/310 µs
0.5/700 µs
0.2/310 µs
2 kV
■
Diode bridge for polarity guard and crowbar
protection within one device.
Single chip for greater reliability
Reduces component count versus discrete
solution
40A(*)
1.5 kV
38A
■
■
CNET
Bellcore
TR-NWT-000974: 10/1000 µs
10/1000 µs
1 kV
30A(*)
■
Saves space on the board
FCC Part 68
2/10
2/10
µs
µs
2.5 kV
75A (*)
MIL STD883C Method 3015-6
(*) with series resistor or PTC.
TM: ASD is trademarks of STMicroelectronics.
October 2003 - Ed: 4
1/9
TSIxxB1
TYPICAL APPLICATION
PTC
Telecom terminals have a diode bridge for polarity
guard, located at the line interface stage. They
also have above this diode bridge one crowbar
protection device that is mandatory to prevent
atmospheric effects and AC mains disturbances
from damaging the electronic circuitry that follows
the diode bridge.
ST proposes a one chip device that includes both
protection and diode bridge. This is the concept of
the TSIxxB1 devices.
Fig. 1 : The various uses of the TSIxxB1 in a conventional telecom network
2/9
TSIxxB1
ELECTRICAL PARAMETERS
TSIxxB1 BEHAVIOUR WITH REGARD TO
SURGE STANDARD :
The VRM value corresponds to the maximum
voltage of the application in normal operation. For
instance, if the maximum line voltage is ranging
between 100VRMS of ringing plus 48V of battery
voltage, then the protection chosen for this applica-
tion shall have a VRM close to 200V.
The TSIxxB1 is able to replace both diode bridge
and usual discrete protection on telecom
terminals. Furthermore it complies with the CCITT
K17 recommendations :
10/700 µs waveform surge test, 1.5kV
AC power induction test
The VBO is the triggering voltage. This indicates
the voltage limit for which the component
short-circuits. Passing this VBO makes the device
turn on.
AC power contact test
The IBO is the current that makes the device turn
on. Indeed, if we want a Trisil to be turned on not
only the voltage across it shall pass the VBO value
but the current through it shall also pass the IBO
value.
In other words, if a voltage surge occurring on the
line is higher than the VBO value of a Trisil,
whereas the line surge current is limited to a value
that does not exceed the Trisil’s IBO value, then the
Trisil will never turn into short circuit. At this time
the surge will be clamped by the Trisil.
Anyhow the electronic circuitry located after the
Trisil will always be protected whatever the Trisil
state is (crowbar or clamping mode).
The IH stands for the holding current. When the
Trisil is turned on, as soon as the crossing current
surge gets lower than this IH value, the Trisil
protection device turns back in its idle state.
Remark : for this reason the Trisil ‘s IH value shall
be chosen higher than what the maximum telecom
line current can be.
Fig. 2 : Test circuit for the CCITT K17 recommendations
Ω
3/9
TSIxxB1
TEST # 1
LIGHTNING SIMULATION
This test concerns the 10/700 µs waveform surge,
± 1.5 kV.
The surge generator used for the test has the
following circuitry (fig.2).
Fig. 2 : 10/700 µs waveform surge generator circuit
Ω
Ω
Ω
The behaviour of the TSI200B1 to this lightning surge is given below (fig. 3).
Fig. 3 : Voltage across the TSI200B1 at the + and - terminations and current throught it
for a 1.5 kV positive surge (fig.3a) and negative surge (fig. 3b)
These curves show the peak voltage the surge
generates across the TSI200B1
+
and
-
terminations. This lasts a short time (′ 2 µs) and
after, as the internal protection gehaves like a
short circuit. The voltage drop across the TSIxxB1
becomes a few volts. In the meanwhile all the
surge current flows in the protection.
As far as the 10/700 µs waveform surge test is
concerned,the TSIxxB1 withstand the ±1.5 kV test.
4/9
TSIxxB1
TEST # 2
AC POWER INDUCTION TEST
TEST #3
AC POWER CONTACT TEST
This test simulates the induction phenomena that
can happen between telecom lines and AC mains
lines (fig. 4).
This test simulates the direct contact between the
telecom lines and the AC mains lines.
The AC power contact test consists in applying
240VRMS through a 10Ω PTC during 15 minutes
long on the device under test. The CCITT K17
recommendation specifies an internal generator
impedance allowing 10 ARMS when in short circuit.
Fig. 4 : AC power induction test circuit
The behavior of the TSI200B1 with respect to this
surge is given in figure 6.
Fig. 6 : Voltage at the TSI200B1 + & - terminations
and the current through it.
Part #1
test conditions :
test conditions :
VRMS = 240 V
R = 600 Ω
t = 0.2 s
Part #2
VRMS = 600 V
R = 600 Ω
t = 0.2 s
Fig. 5 : Voltage at the + and - terminations of the
TSI200B1, and current through it
while test part 1 is applied.
The figure 6 shows that after 250ms there is no
current anymore flowing through the TSI200B1
device. This is due to the action of the serial PTC
that limits the current through the line. This PTC is
mandatory for this test. It can also be replaced by a
fuse or any other serial protection that “opens” the
line loop under AC contact test.
The TSIxxB1 withstand the AC power induction
test in both cases.
5/9
TSIxxB1
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
Symbol
Parameter
Value
Unit
IPP
Non repetitive peak on-sate current (see note 1)
10/1000 µs (open circuit voltage wave shape 10/100 µs)
5/310 µs (open circuit voltage wave shape 10/700 µs)
2/10 µs (open circuit voltage wave shape 2/10 µs)
30
40
75
A
IF
Maximum DC current
0.2
A
A
ITSM
Non repetitive surge peak on-state current
tp = 20 ms
5
t = 1s
3.5
Tstg
Tj
Storage temperature range
Maximum junction temperature
- 55 to +150
150
°C
°C
TL
Maximum lead temperature for soldering during 10 s
260
Note 1 : Pulse waveform :
% I
PP
10/1000µs t =10µs
t =1000µs
r
p
5/310µs
2/10µs
t =5µs
t =310µs
r
p
100
t =2µs
t =10µs
r
p
50
0
t
t
t
p
r
THERMAL RESISTANCE
Symbol
Parameter
Value
Unit
Rth(j-a)
Junction to ambient
170
°C/W
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
I
Symbol
VRM
VBO
VBR
IH
Parameter
Stand-off voltage
IPP
Breakover voltage
Breakdown voltage
Holding current
IBO
I
H
IRM
V
IBO
Breakover current
Leakage current at VRM
Peak pulse current
Capacitance
VRM
V
BO
IRM
IPP
C
αT
Temperature coefficient
6/9
TSIxxB1
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C)
1 - PROTECTION DEVICES PARAMETERS
IRM @ VRM
VBO @ IBO
note1
V
IH
IBO
C
note3
pF
note2
mA
note1
Type
µA
V
mA
min.
50
mA
max.
max.
90
min.
150
max.
400
typ.
200
1
5
50
62
TSI62B1
TSI180B1
TSI200B1
TSI220B1
TSI265B1
1
5
50
180
250
290
330
380
150
150
150
150
50
50
50
50
400
400
400
400
200
200
200
200
1
5
50
200
1
5
50
220
1
5
50
265
Note 1 : Measured at 50 Hz, one cycle
Note 2 : See test cricuit
Note 3 : V = 0V, F = 1MHz, between pins 1 and 8.
R
2 - DIODE BRIDGE PARAMETERS
Symbol
Test condition
Value
Unit
VF
IF = 20 mA
IF = 100 mA
0.9
1.1
V
V
(for one diode)
FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT : GO - NO GO TEST
R
- V
P
D.U.T.
V
= - 48 V
BAT
Surge generator
This is a GO-NOGO Test which allows to confirm the holding current (IH) level in a functional
test circuit.
TEST PROCEDURE :
■ 1) Adjust the current level at the IH value by short circuiting the D.U.T.
2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 µs.
3) The D.U.T will come back off-state within a duration of 50 ms max.
7/9
TSIxxB1
MARKING
Type
Marking
TSI180
TSI200
TSI220
TSI180B1
TSI200B1
TSI220B1
ORDER CODE
TSI 265 B 1 RL
Terminal
Set
RL = Tape & reel (2500pcs)
= Tube (100pcs)
Interface
SO-8 Package
VBRmin
8/9
TSIxxB1
PACKAGE MECHANICAL DATA
SO-8
DIMENSIONS
Millimetres Inches
Min. Typ. Max. Min. Typ. Max.
REF.
A
a1
a2
b
1.75
0.069
0.010
0.065
0.019
0.010
0.1
0.25 0.004
1.65
0.35
0.19
0.48 0.014
0.25 0.007
b1
C
0.50
0.020
c1
D
45° (typ)
4.8
5.8
5.0 0.189
6.2 0.228
0.197
0.244
E
e
1.27
3.81
0.050
0.150
e3
F
3.8
0.4
4.0 0.15
1.27 0.016
0.6
0.157
0.050
0.024
L
M
S
8° (max)
Packaging : product supplied in tape and reel or antistatic tubes.
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not au-
thorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners.
© 2003 STMicroelectronics - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany -
Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain -
Sweden - Switzerland - United Kingdom - United States
www.st.com
9/9
相关型号：
©2020 ICPDF网 联系我们和版权申明