TSOP2237KU1 [ETC]

TRANSISTOR-STAGE OUTPUT PHOTO IC ; 晶体管级的输出光IC\n
TSOP2237KU1
型号: TSOP2237KU1
厂家: ETC    ETC
描述:

TRANSISTOR-STAGE OUTPUT PHOTO IC
晶体管级的输出光IC\n

晶体 晶体管 输出元件
文件: 总7页 (文件大小:147K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TSOP22..KU1  
Vishay Semiconductors  
Photo Modules for PCM Remote Control Systems  
Available Types For Different Carrier Frequencies  
Type  
fo  
Type  
fo  
TSOP2230KU1  
TSOP2236KU1  
TSOP2238KU1  
TSOP2256KU1  
30 kHz  
36 kHz  
38 kHz  
56 kHz  
TSOP2233KU1  
TSOP2237KU1  
TSOP2240KU1  
33.0 kHz  
36.7 kHz  
40.0 kHz  
Description  
The TSOP22.. – series are miniaturized receivers for  
infrared remote control systems. PIN diode and  
preamplifier are assembled on lead frame, the epoxy  
package is designed as IR filter.  
The demodulated output signal can directly be  
decoded by a microprocessor. The main benefit is the  
reliable function even in disturbed ambient and the  
protection against uncontrolled output pulses.  
16645  
Features  
Special Features  
D Photo detector and preamplifier in one package  
D Internal filter for PCM frequency  
D TTL and CMOS compatibility  
D Output active low  
D Small size package  
D High immunity against disturbance light  
D No occurrence of disturbance pulses at the output  
D Short settling time after power on (< 200µs)  
D Improved shielding against electrical field  
D Contiunous data transmission possible  
disturbance  
( 800 bursts/s)  
D Suitable burst length 10 cycles/burst  
Block Diagramm  
2
V
S
Control  
Circuit  
Input  
30 kW  
1
OUT  
GND  
PIN  
Band  
Pass  
Demodu-  
lator  
AGC  
3
16591  
Document Number 82172  
Rev. 1, 19–Nov–01  
www.vishay.com  
1 (7)  
TSOP22..KU1  
Vishay Semiconductors  
Absolute Maximum Ratings  
T
amb  
= 25°C  
Parameter  
Supply Voltage  
Supply Current  
Output Voltage  
Test Conditions  
Symbol  
Value  
–0.3...6.0  
5
–0.3...6.0  
5
Unit  
V
mA  
V
mA  
°C  
°C  
°C  
mW  
°C  
(Pin 2)  
(Pin 2)  
(Pin 1)  
(Pin 1)  
V
S
I
S
V
O
Output Current  
I
O
Junction Temperature  
Storage Temperature Range  
Operating Temperature Range  
Power Consumption  
Soldering Temperature  
T
100  
j
T
–25...+85  
–25...+85  
50  
stg  
T
amb  
(T  
amb  
x 85 °C)  
P
tot  
t x 10 s, 1 mm from case  
T
sd  
260  
Basic Characteristics  
T
amb  
= 25°C  
Parameter  
Supply Current (Pin 2)  
Test Conditions  
Symbol Min. Typ. Max.  
Unit  
mA  
mA  
V
V = 5 V, E = 0  
I
I
0.8  
1.1  
1.4  
1.5  
S
v
SD  
SH  
V = 5 V, E = 40 klx, sunlight  
S
v
Supply Voltage (Pin 2)  
Transmission Distance  
V
4.5  
5.5  
S
E = 0, test signal see fig.7,  
d
35  
m
v
IR diode TSAL6200, I = 250 mA  
F
2
Output Voltage Low (Pin 1) I = 0.5 mA,E = 0.7 mW/m , f = f  
V
E
250  
0.4 mW/m  
mV  
OL  
e
o
OL  
2
2
Irradiance (30 – 40 kHz)  
Pulse width tolerance:  
t – 5/f < t < t + 6/f ,  
0.2  
0.3  
e min  
e min  
e max  
pi  
o
po  
pi  
o
test signal see fig.7  
Irradiance (56 kHz)  
Pulse width tolerance:  
E
0.5 mW/m  
t –5/f < t < t +6/f ,  
pi  
o
po  
pi  
o
test signal see fig.7  
2
Irradiance  
Directivity  
E
30  
W/m  
deg  
Angle of half transmission distance  
ϕ
±45  
1/2  
Application Circuit  
100 W *)  
+5V  
2
4.7 mF *)  
TSOP22..KU1  
>10 kW  
optional  
TSAL62..  
mC  
1
3
**)  
16610  
GND  
*) recommended to suppress power supply disturbances  
**) The output voltage should not be hold continuously at a voltage below 3.3 V by the external circuit.  
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2 (7)  
Document Number 82172  
Rev. 1, 19–Nov–01  
TSOP22..KU1  
Vishay Semiconductors  
Suitable Data Format  
The circuit of the TSOP22..KU1 is designed in that Some examples for suitable data format are:  
way that unexpected output pulses due to noise or NEC Code, Toshiba Micom Format, Sharp Code,  
disturbance signals are avoided. A bandpassfilter, an RC5 Code, RC6 Code, R–2000 Code.  
integrator stage and an automatic gain control are  
When a disturbance signal is applied to the  
used to suppress such disturbances.  
TSOP22..KU1 it can still receive the data signal.  
The distinguishing mark between data signal and  
However the sensitivity is reduced to that level that no  
disturbance signal are carrier frequency, burst length  
unexpected pulses will occure.  
and duty cycle.  
Some examples for such disturbance signals which  
are suppressed by the TSOP22..KU1 are:  
The data signal should fullfill the following condition:  
Carrier frequency should be close to center  
frequency of the bandpass (e.g. 38 kHz).  
DC light (e.g. from tungsten bulb or sunlight)  
Burst length should be 10 cycles/burst or longer.  
Continuous signal at 38 kHz or at any other  
frequency  
After each burst which is between 10 cycles and  
70 cycles a gap time of at least 14 cycles is  
neccessary.  
Signals from fluorescent lamps with electronic  
ballast with low modulation  
For each burst which is longer than 1.8 ms a  
corresponding gap time is necessary at some  
time in the data stream. This gap time should be at  
least 4 times longer than the burst.  
(see Figure A or Figure B).  
Up to 800 short bursts per second can be  
received continuously.  
0
5
10  
time [ms]  
15  
20  
Figure A: IR Signal from Fluorescent Lamp with low Modulation  
0
5
10  
15  
20  
time [s]  
Figure B: IR Signal from Fluorescent Lamp with high Modulation  
Document Number 82172  
Rev. 1, 19–Nov–01  
www.vishay.com  
3 (7)  
TSOP22..KU1  
Vishay Semiconductors  
Typical Characteristics (Tamb = 25_C, unless otherwise specified)  
1.0  
2.0  
f(E)=f  
0.8  
0.6  
0
1.6  
1.2  
0.8  
0.4  
0.2  
0.4  
0.0  
f = f "5%  
0
Df ( 3dB ) = f /10  
0
0.0  
1.3  
2.0  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
0.0  
0.4  
0.8  
1.2  
1.6  
f/f – Relative Frequency  
0
E – Field Strength of Disturbance ( kV/m )  
94 8143  
94 8147  
Figure 1. Frequency Dependence of Responsivity  
Figure 4. Sensitivity vs. Electric Field Disturbances  
10  
1.0  
0.9  
0.8  
f = f  
0
1 kHz  
Input burst duration  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
10 kHz  
1
l = 950 nm,  
optical test signal, fig.7  
100 Hz  
0.1  
1000  
AC Voltage on DC Supply Voltage (mV)  
0.01  
0.1  
1
10  
100  
0.1  
1.0  
10.0 100.0 1000.0 10000.0  
2
96 12110  
E – Irradiance ( mW/m )  
DV  
94 9106  
e
sRMS –  
Figure 2. Sensitivity in Dark Ambient  
Figure 5. Sensitivity vs. Supply Voltage Disturbances  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
1.0  
Correlation with ambient light sources  
(Disturbanceeffect):10W/m ^1.4klx  
(Stand.illum.A,T=2855K)^8.2klx  
0.9  
2
Sensitivity in dark ambient  
0.8  
(Daylight,T=5900K)  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
Ambient, l = 950 nm  
0.01  
0.10  
1.00  
10.00  
100.00  
–30 –15  
0
15 30 45 60 75 90  
2
96 12111  
E – DC Irradiance (W/m )  
96 12112  
T
amb  
– Ambient Temperature ( °C )  
Figure 3. Sensitivity in Bright Ambient  
Figure 6. Sensitivity vs. Ambient Temperature  
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4 (7)  
Document Number 82172  
Rev. 1, 19–Nov–01  
TSOP22..KU1  
Vishay Semiconductors  
Optical Test Signal  
(IR diode TSAL6200, I = 0.4 A, 30 pulses, f = f , T = 10 ms)  
E
e
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
F
0
T
on  
t
t
*
pi  
T
T
off  
* t w 10/fo is recommended for optimal function  
pi  
l = 950 nm,  
optical test signal, fig.8  
Output Signal  
16110  
V
V
O
1 )  
2 )  
7/f < t < 15/f  
0
d
0
OH  
t
= t " 6/f  
po  
pi 0  
0.1  
1.0  
10.0 100.0 1000.0 10000.0  
V
OL  
2
96 12114  
E – Irradiance (mW/m )  
e
1 )  
t
t
d
2 )  
t
po  
Figure 10. Output Pulse Diagram  
Figure 7. Output Function  
Optical Test Signal  
E
e
1.2  
1.0  
0.8  
0.6  
0.4  
t
600 ms  
600 ms  
T = 60 ms  
94 8134  
Output Signal, ( see Fig.10 )  
V
V
O
0.2  
0
OH  
OL  
V
1150  
750  
850  
950  
1050  
t
T
on  
T
off  
l Wavelength ( nm )  
94 8408  
Figure 8. Output Function  
Figure 11. Relative Spectral Sensitivity vs. Wavelength  
0°  
10°  
20°  
30°  
40°  
0.8  
f = 38 kHz  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
1.0  
0.9  
0.8  
50°  
60°  
70°  
80°  
0.7  
0.6  
0.6  
0.4  
0.2  
0
0.2  
0.4  
10 20 30 40 50 60 70 80 90  
d
– Relative Transmission Distance  
96 12223p2  
rel  
16156  
Burstlength [number of cycles/burst]  
Figure 9. Max. Envelope Duty Cycle vs. Burstlength  
Figure 12. Directivity  
Document Number 82172  
Rev. 1, 19–Nov–01  
www.vishay.com  
5 (7)  
TSOP22..KU1  
Vishay Semiconductors  
Dimensions in mm  
16586  
www.vishay.com  
6 (7)  
Document Number 82172  
Rev. 1, 19–Nov–01  
TSOP22..KU1  
Vishay Semiconductors  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems with respect to their impact on the health and safety of our employees and the public, as well as  
their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone  
depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their  
use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs  
listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances  
and do not contain such substances.  
We reserve the right to make changes to improve technical design and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each customer application  
by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the  
buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or  
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
Document Number 82172  
Rev. 1, 19–Nov–01  
www.vishay.com  
7 (7)  

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