TYN812T [ETC]
12A SCRS ; 中外合作办学12A\n
| 型号： | TYN812T |
| 厂家： | 
ETC |
| 描述： | 12A SCRS
|
| 文件： | 总10页 (文件大小：156K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TN12, TS12 and TYNx12 Series
®
SENSITIVE & STANDARD
12A SCRs
MAIN FEATURES:
Symbol
A
Value
12
Unit
G
I
A
T(RMS)
K
A
A
V
/V
600 to 1000
0.2 to 15
V
DRM RRM
I
mA
K
GT
K
A
A
G
G
DESCRIPTION
DPAK
2
D PAK
(TS12-B)
(TN12-B)
Available either in sensitive (TS12) or standard
(TYN, TN12...) gate triggering levels, the 12A SCR
series is suitable to fit all modes of control found in
applications such as overvoltage crowbar
protection, motor control circuits in power tools
and kitchen aids, in-rush current limiting circuits,
capacitive discharge ignition, voltage regulation
circuits...
(TN12-G)
A
A
K
A
K
G
A
Available in though-hole or surface-mount
packages, they provide an optimized performance
in a limited space area.
G
IPAK
(TS12-H)
(TN12-H)
TO-220AB
(TYN)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
12
Unit
I
RMS on-state current (180° conduction angle)
T(RMS)
Tc = 105°C
Tc = 105°C
A
A
IT
Average on-state current (180° conduction angle)
(AV)
8
²
DPAK /
IPAK
D PAK /
TO-220AB
I
Non repetitive surge peak
on-state current
tp = 8.3 ms
115
110
146
TSM
Tj = 25°C
Tj = 25°C
Tj = 125°C
A
tp = 10 ms
140
²
²
²
tp = 10 ms
F = 60 Hz
tp = 20 µs
60
98
A S
I t
I t Value for fusing
Critical rate of rise of on-state
dI/dt
50
A/µs
current I = 2 x I
, tr ≤ 100 ns
G
GT
I
Peak gate current
Tj = 125°C
Tj = 125°C
4
1
A
GM
P
Average gate power dissipation
W
G(AV)
T
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
stg
°C
V
Tj
V
Maximum peak reverse gate voltage (for TN12 & TYN)
5
RGM
September 2000 - Ed: 3
1/10
TN12, TS12 and TYNx12 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
■ SENSITIVE
Symbol
Test Conditions
TS1220
Unit
I
GT
MAX.
200
µA
V
V
= 12 V
R = 140 Ω
D
L
V
MAX.
MIN.
MIN.
0.8
0.1
8
GT
V
Tj = 125°C
V
I
= V
R = 3.3 kΩ
R
= 1 kΩ
GK
V
GD
D
DRM
L
V
= 10 µA
V
RG
RG
I
I = 50 mA
R
GK
= 1 kΩ
= 1 kΩ
MAX.
MAX.
MIN.
5
mA
mA
V/µs
V
H
T
I
I
= 1 mA
R
GK
6
L
G
V
I
= 67 % V
R
= 220 Ω
dV/dt
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
5
D
DRM
GK
V
= 24 A tp = 380 µs
MAX.
MAX.
MAX.
MAX.
1.6
0.85
30
5
TM
TM
V
Threshold voltage
V
t0
R
Dynamic resistance
mΩ
µA
mA
d
I
I
DRM
RRM
V
= V
R
= 220 Ω
GK
DRM
RRM
2
■ STANDARD
TN1215
TYN
Symbol
Test Conditions
Unit
B/H
G
x12T
x12
I
MIN.
MAX.
MAX.
2
0.5
5
2
mA
GT
15
15
V
V
= 12 V
R = 33 Ω
L
D
V
V
1.3
0.2
V
GT
Tj = 125°C
MIN.
= V
R = 3.3 kΩ
L
V
GD
D
DRM
I
I = 500 mA Gate open
MAX.
MAX.
40
80
30
60
15
30
40
30
60
mA
mA
H
T
I
I = 1.2 I
G GT
L
dV/dt
V
I
= 67 % V
Gate open
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MIN.
200
200
V/µs
V
D
DRM
V
MAX.
= 24 A tp = 380 µs
1.6
0.85
30
5
TM
TM
V
MAX.
MAX.
MAX.
V
Threshold voltage
t0
R
mΩ
Dynamic resistance
d
I
µA
DRM
V
= V
RRM
DRM
mA
I
2
RRM
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
R
Junction to case (DC)
Junction to ambient
th(j-c)
th(j-a)
1.3
°C/W
°C/W
R
TO-220AB
IPAK
60
100
45
²
²
S = 1 cm
D PAK
²
DPAK
70
S = 0.5 cm
S = Copper surface under tab
2/10
TN12, TS12 and TYNx12 Series
PRODUCT SELECTOR
Part Number
Voltage (xxx)
700 V 800 V
Sensitivity
Package
600 V
1000 V
TN1215-xxxB
TN1215-xxxG
X
X
X
X
15 mA
15 mA
DPAK
²
X
X
D PAK
TN1215-xxxH
TS1220-xxxB
TS1220-xxxH
TYNx12
X
X
X
X
X
15 mA
0.2 mA
0.2 mA
30 mA
15 mA
IPAK
DPAK
X
X
IPAK
X
X
X
X
TO-220AB
TO-220AB
TYNx12T
ORDERING INFORMATION
TN 12 15 - 600 B (-TR)
STANDARD
SCR
PACKING MODE:
SERIES
Blank:Tube
-TR: D2PAK & DPAK
Tape & Reel
PACKAGE:
B: DPAK
H: IPAK
CURRENT: 12A
VOLTAGE:
600: 600V
800: 800V
1000: 1000V
SENSITIVITY:
15: 15mA
G: D2PAK
TS 12 20 - 600 B (-TR)
SENSITIVE
SCR
SERIES
PACKING MODE:
Blank:Tube
-TR: DPAK Tape & Reel
PACKAGE:
B: DPAK
H: IPAK
CURRENT: 12A
SENSITIVITY:
20: 200µA
VOLTAGE:
600: 600V
700: 700V
TYN 6 12 T
STANDARD
SCR
SERIES
SENSITIVITY:
Blank: 30mA
T: 15mA
VOLTAGE:
600: 600V
800: 800V
CURRENT: 12A
1000: 1000V
3/10
TN12, TS12 and TYNx12 Series
OTHER INFORMATION
Part Number
TN1215-x00B
Marking
TS1215x00
Weight
Base Quantity
Packing mode
0.3 g
0.3 g
1.5 g
1.5 g
0.4 g
0.3 g
0.3 g
0.4 g
2.3 g
2.3 g
2.3 g
2.3 g
75
2500
50
Tube
Tape & reel
Tube
TN1215-x00B-TR
TN1215-x00G
TN1215-x00G-TR
TN1215-x00H
TS1220-x00B
TS1220-x00B-TR
TS1220-x00H
TYNx12
TS1215x00
TS1215x00G
TS1215x00G
TN1215x00
TS1220x00
TS1220x00
TS1220x00
TYNx12
1000
75
Tape & reel
Tube
75
Tube
2500
75
Tape & reel
Tube
250
50
Bulk
TYNx12RG
TYNx12
Tube
TYNx12T
TYNx12T
250
50
Bulk
TYNx12TRG
TYNx12T
Tube
Note: x = voltage
Fig. 1: Maximum average power dissipation
Fig. 2-1: Average and D.C. on-state current
versus average on-state current.
versus case temperature.
P(W)
IT(av)(A)
12
11
14
α = 180°
DC
10
9
8
7
6
12
10
α = 180°
8
5
4
3
6
4
360°
2
1
0
2
α
IT(av)(A)
Tcase(°C)
0
0
1
2
3
4
5
6
7
8
9
0
25
50
75
100
125
Fig. 2-2: Average and D.C. on-state current
versus ambient temperature (device mounted on
FR4 with recommended pad layout) (DPAK and
Fig. 3-1: Relative variation of thermal impedance
junction to case versus pulse duration.
2
D PAK).
IT(av)(A)
K = [Zth(j-c)/Rth(j-c)]
3.0
1.0
2.5
2.0
1.5
1.0
0.5
0.0
DC
2
D PAK
0.5
0.2
α = 180°
DPAK
Tamb(°C)
tp(s)
0.1
0
25
50
75
100
125
1E-3
1E-2
1E-1
1E+0
4/10
TN12, TS12 and TYNx12 Series
Fig. 3-2:
Relative variation of thermal
Fig. 4-1: Relative variation of gate trigger
current, holding current and latching versus
junction temperature for TS12 series.
impedance junction to ambient versus pulse
duration (recommended pad layout, FR4 PC
board).
K = [Zth(j-a)/Rth(j-a)]
IGT,IH,IL [Tj] / IGT,IH,IL [Tj = 25 °C]
1.00
2.0
1.8
1.6
1.4
IGT
DPAK
D2PAK
1.2
IH & IL
TO-220AB
0.10
1.0
0.8
0.6
0.4
0.2
0.0
Rgk = 1kΩ
tp(s)
Tj(°C)
40 60
0.01
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
-40 -20
0
20
80 100 120 140
Fig. 4-2: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature for TN12 & TYN
series.
Fig. 5: Relative variation of holding current
versus gate-cathode resistance (typical values)
for TS12 series.
IH[Rgk] / IH[Rgk = 1k Ω]
IGT,IH,IL [Tj] / IGT,IH,IL [Tj = 25 °C]
5.0
2.4
2.2
Tj = 25°C
4.5
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
IGT
4.0
3.5
3.0
2.5
2.0
1.5
1.0
IH & IL
Tj(°C)
40 60
0.5
Rgk(kΩ)
0.0
-40 -20
0
20
80 100 120 140
1E-2
1E-1
1E+0
1E+1
Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values)
for TS12 series.
Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical values)
for TS12 series.
dV/dt[Rgk] / dV/dt [Rgk = 220Ω]
dV/dt[Cgk] / dV/dt [Rgk = 220Ω]
10.0
4.0
Tj = 125°C
VD = 0.67 x VDRM
VD = 0.67 x VDRM
Tj = 125°C
Rgk = 220Ω
3.5
3.0
2.5
2.0
1.5
1.0
1.0
Rgk(kΩ)
0.5
Cgk(nF)
0.1
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
25
50
75
100
125
150
5/10
TN12, TS12 and TYNx12 Series
Fig. 8: Surge peak on-state current versus
number of cycles (TS12/TN12/TYN).
Fig. 9: Non-repetitive surge peak on-state
current for sinusoidal pulse with width
tp < 10 ms, and corresponding values of I²t.
a
2
2
dV/dt[Rgk] / dV/dt [Rgk = 220Ω]
ITSM(A),I t(A s)
10.0
2000
1000
Tj = 125°C
VD = 0.67 x VDRM
Tjinitial=25°C
ITSM
TYN/TN12
TS12
dI/dt
limitattion
1.0
TYN/TN12
TS12
100
I2t
Rgk(kΩ)
tp(ms)
10
0.1
0.0
0.01
0.10
1.00
10.00
0.2
0.4
0.6
0.8
1.0
1.2
Fig. 10: On-state characteristics (maximum
values).
Fig. 11: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35 µm) .
ITM(A)
Rth(j-a)(°C/W)
200
100
Tj max.:
Vto = 0.85V
Rd = 30mΩ
100
80
60
Tj = Tjmax.
10
DPAK
40
Tj = 25°C
2
D PAK
20
2
S(cm )
VTM(V)
0
1
0
2
4
6
8
10 12 14 16 18 20
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
6/10
TN12, TS12 and TYNx12 Series
PACKAGE MECHANICAL DATA
DPAK (Plastic)
DIMENSIONS
REF.
Millimeters
Inches
Min.
Max
Min.
Max.
A
A1
A2
B
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
0.086
0.035
0.001
0.025
0.204
0.017
0.018
0.236
0.251
0.173
0.368
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.259
0.181
0.397
B2
C
R
C2
D
R
E
G
H
L2
L4
R
0.80 typ.
0.031 typ.
0.60
1.00
0.023
0.039
0.2 typ.
0.007 typ.
0°
V2
0°
8°
8°
FOOTPRINT DIMENSIONS (in millimeters)
DPAK (Plastic)
6.7
6.7
3
3
1.6
1.6
2.3 2.3
7/10
TN12, TS12 and TYNx12 Series
PACKAGE MECHANICAL DATA
2
D PAK (Plastic)
DIMENSIONS
Millimeters
Min. Typ. Max. Min. Typ. Max.
REF.
Inches
A
E
C2
L2
A
A1
A2
B
4.30
2.49
0.03
0.70
1.25
0.45
1.21
8.95
10.00
4.88
15.00
1.27
1.40
4.60 0.169
2.69 0.098
0.23 0.001
0.93 0.027
0.181
0.106
0.009
0.037
D
L
B2
C
1.40
0.048 0.055
L3
0.60 0.017
1.36 0.047
9.35 0.352
10.28 0.393
5.28 0.192
15.85 0.590
1.40 0.050
1.75 0.055
0.024
0.054
0.368
0.405
0.208
0.624
0.055
0.069
A1
C2
D
B2
R
C
B
E
G
G
L
A2
2.0 MIN.
FLAT ZONE
L2
L3
R
0.40
0.016
V2
V2
0°
8°
0°
8°
FOOTPRINT DIMENSIONS (in millimeters)
2
D PAK (Plastic)
16.90
10.30
5.08
1.30
3.70
8.90
8/10
TN12, TS12 and TYNx12 Series
PACKAGE MECHANICAL DATA
IPAK (Plastic)
DIMENSIONS
REF.
Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
A
A1
A3
B
2.2
0.9
2.4
1.1
1.3
0.9
5.4
0.85
0.086
0.035
0.027
0.025
0.204
0.094
0.043
0.051
0.035
0.212
0.033
A
E
C2
0.7
B2
0.64
5.2
L2
B2
B3
B5
B6
C
0.3
0.035
D
0.95
0.6
0.6
6.2
6.6
4.6
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
0.45
0.48
6
0.017
0.019
0.236
0.252
0.173
H
B3
C2
D
L1
B6
L
A1
B
V1
E
6.4
4.4
15.9
9
G
H
16.3 0.626
B5
C
L
9.4
1.2
1
0.354
0.031
G
A3
L1
L2
V1
0.8
0.8
0.031 0.039
10°
10°
9/10
TN12, TS12 and TYNx12 Series
PACKAGE MECHANICAL DATA
TO-220AB (Plastic)
DIMENSIONS
Millimeters
Min. Typ. Max. Min. Typ. Max.
REF.
Inches
B
C
b2
A
a1
a2
B
15.20
15.90 0.598
0.625
L
3.75
0.147
F
I
13.00
10.00
0.61
1.23
4.40
0.49
2.40
2.40
6.20
3.75
14.00 0.511
10.40 0.393
0.88 0.024
1.32 0.048
4.60 0.173
0.70 0.019
2.72 0.094
2.70 0.094
6.60 0.244
3.85 0.147
0.551
0.409
0.034
0.051
0.181
0.027
0.107
0.106
0.259
0.151
A
b1
b2
C
l4
c1
c2
e
c2
a1
l3
l2
a2
F
I
I4
L
15.80 16.40 16.80 0.622 0.646 0.661
2.65
1.14
1.14
2.95 0.104
1.70 0.044
1.70 0.044
0.116
0.066
0.066
b1
M
c1
l2
l3
M
e
2.60
0.102
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2000 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco
Singapore - Spain - Sweden - Switzerland - United Kingdom
http://www.st.com
10/10
相关型号：
©2020 ICPDF网 联系我们和版权申明