UC1852N [ETC]

Power Factor Controller ; 功率因数控制器\n
UC1852N
型号: UC1852N
厂家: ETC    ETC
描述:

Power Factor Controller
功率因数控制器\n

光电二极管 控制器
文件: 总6页 (文件大小:235K)
中文:  中文翻译
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UC1852  
UC2852  
UC3852  
High Power-Factor Preregulator  
FEATURES  
DESCRIPTION  
The UC1852 provides a low-cost solution to active power-factor correction (PFC)  
for systems that would otherwise draw high peak current pulses from AC power  
lines. This circuit implements zero-current switched boost conversion, producing  
sinusoidal input currents with a minimum of external components, while keeping  
peak current substantially below that of fully-discontinuous converters.  
Low-Cost Power Factor  
Correction  
Power Factor Greater Than 0.99  
Few External Parts Required  
Controlled On-Time Boost PWM  
Zero-Current Switching  
The UC1852 provides controlled switch on-time to regulate the output bulk DC  
voltage, an off-time defined by the boost inductor, and a zero-current sensing  
circuit to reactivate the switch cycle. Even though switching frequency varies with  
both load and instantaneous line voltage, it can be maintained within a reasonable  
range to minimize noise generation.  
Limited Peak Current  
Min and Max Frequency Limits  
Starting Current Less Than 1mA  
High-Current FET Drive Output  
Under-Voltage Lockout  
While allowing higher peak switch currents than continuous PFCs such as the  
UC1854, this device offers less external circuitry and smaller inductors, yet better  
performance and easier line-noise filtering than discontinuous current PFCs with  
no sacrifice in complexity or cost. The ability to obtain a power factor in excess of  
0.99 makes the UC1852 an optimum choice for low-cost applications in the 50 to  
500 watt power range. Protection features of these devices include under-voltage  
lockout, output clamping, peak-current limiting, and maximum-frequency  
clamping.  
The UC1852 family is available in 8-pin plastic and ceramic dual in-line packages,  
and in the 8-pin small outline IC package (SOIC). The UC1852 is specified for  
operation from -55°C to +125°C, the UC2852 is specified for operation from -40°C  
to +85°C, and the UC3852 is specified for operation from 0°C to +70°C.  
TYPICAL APPLICATION  
UDG-92001  
10/94  
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UC1852  
UC2852  
UC3852  
ABSOLUTE MAXIMUM RATINGS  
CONNECTION DIAGRAM  
Supply Voltage (Low-impedance Source)..........................30.0V  
Supply Current (High-impedance Source) ......................30.0mA  
OUT Current, Peak.............................................................±1.0A  
OUT Energy, Capacitive Load............................................ 5.0µJ  
Input Voltage, ISNS ............................................................±5.0V  
Input Voltage, VFB............................................. –0.3V to +10.0V  
COMP Current...............................................................±10.0mA  
ISET Current..................................................................–10.0mA  
Power Dissipation at Ta25°C (Note 3) ..............................1.0W  
Storage Temperature .......................................65°C to +150°C  
Lead Temperature (Soldering, 10 Seconds)................... +300°C  
Note 1: All voltages with respect to GND (Pin 1).  
DIL–8 (TOP VIEW)  
J or N Package  
SOIC–8 (TOP VIEW)  
D Package  
Note 2: All currents are positive into the specified terminal.  
Note 3: Refers to DIL-8 Package. Consult Packaging Section of  
Unitrode Integrated Circuits databook for thermal limitations and  
considerations of package.  
UDG-92002  
Unless otherwise stated, VCC=24V, ISET=50kto GND, RAMP=1nF to GND, ISNS=  
–0.1V, VFB connected to COMP, no load on OUT, –55°C<Ta<+125°C for the UC1852,  
–40°C<Ta<+85°C for the UC2852, and 0°C<Ta<+70°C for the UC3852, and Ta=Tj.  
ELECTRICAL CHARACTERISTICS  
PARAMETER  
Timer Section  
TEST CONDITIONS  
MIN.  
TYP.  
MAX. UNITS  
ISET Voltage  
4.5  
88  
12  
5.0  
98  
5.5  
108  
50  
V
µA  
mA  
V
RAMP Charge Current  
RAMP Discharge Current  
RAMP Saturation Voltage  
RAMP Threshold - Maximum Frequency  
RAMP Threshold - PWM Comparator  
Current Sense Comparator  
ISNS Restart Threshold  
ISNS Fault Threshold  
RAMP=2.5V  
ISNS= –1.0V, RAMP=1.0V  
ISNS= –1.0V, IRAMP=100µA  
VFB=10V, COMP open  
28  
0.006  
1.02  
4.3  
0.200  
1.12  
4.8  
0.92  
3.9  
V
V
–18  
–550  
–100  
–10  
–450  
–30  
–4  
mV  
mV  
µA  
–350  
100  
ISNS Input Current  
Error Amplifier Section  
VFB Input Voltage  
4.6  
–5.00  
10  
5.0  
5.3  
V
µA  
mA  
µA  
V
VFB Input Bias Current  
COMP Sink Current  
–0.03  
5.00  
COMP=7.5V  
COMP Source Current  
COMP Clamp Voltage  
OUT Output  
COMP=2.5V  
–300  
9.2  
–175  
10.0  
–100  
10.6  
VFB=0.0V, COMP open  
OUT Saturation Voltage High  
OUT Saturation Voltage Low  
OUT Saturation Voltage Low @ 10mA  
OUT Clamp Voltage  
VCC=13V, IOUT= –200mA, RAMP=2V  
IOUT=200mA, ISNS= –1.0V  
IOUT=10mA, ISNS= –1.0V  
IOUT= –200mA, RAMP=2V  
IOUT=100mA, VCC=0V  
0.5  
0.5  
1.7  
1.6  
2.5  
2.2  
V
V
V
V
V
0.05  
12.0  
1.0  
0.40  
14.5  
2.2  
10.0  
0.5  
OUT Voltage during UVLO  
Overall Section  
Inactive Supply Current  
Active Supply Current  
VCC=10V  
ICC=25mA  
0.2  
3.0  
30  
0.4  
6.0  
33  
1.0  
10.0  
36  
mA  
mA  
V
VCC Clamp Voltage  
VCC Turn-On Threshold  
VCC Turn-Off Threshold  
VCC Threshold Hysteresis  
14.5  
10.5  
3
16.3  
11.5  
5
17.5  
13.0  
7
V
V
V
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UC1852  
UC2852  
UC3852  
DETAILED BLOCK DIAGRAM  
UDG-92003  
PIN DESCRIPTIONS  
COMP: COMP is the output of the error amplifier and the accuracy, ISNS should be connected to a current sense  
input of the PWM comparator. To limit PWM on-time, this resistor through no more than 200 ohms.  
pin is clamped to approximately 10V. To implement soft  
OUT: The output of a high-current power driver capable of  
start, the COMP pin can be pulled low and ramped up with  
driving the gate of a power MOSFET with peak currents  
a PNP transistor, a capacitor, and a resistor.  
exceeding ±500mA. To prevent damage to the power  
GND: Ground for all functions is through this pin.  
MOSFET, the OUT pin is internally driven by a 12V supply.  
However, lead inductance between the OUT pin and the  
load can cause overshoot and ringing. External current  
boost transistors will increase this overshoot and ringing. If  
there is any significant distance between the IC and the  
MOSFET, external clamp diodes and/or series damping  
resistors may be required. OUT is actively held low when  
the VCC is below the UVLO threshold.  
ISET: The dominant function is of this pin is to program  
RAMP charging current. RAMP charging current is  
approximately 5V divided by the external resistor placed  
from ISET to ground. Resistors in the range of 10kto  
50kare recommended, producing currents in the range  
of 100µA to 500µA.  
A second function of ISET is as reference output. The ISET  
pin is normally regulated to 5V ±10%. It is critical that this  
pin onlysee the loading of the RAMP programmingresistor,  
but a high input-impedance comparator or amplifier may be  
connected to this pin or to a tap on the RAMP programming  
resistor if required.  
RAMP: A controlled on-time PWM requires a timer whose  
time can be modulated by an external voltage. The timer  
current is programmed by a resistor from ISET to GND. A  
capacitor from RAMP to GND sets the on time in  
conjunction with the voltage on COMP. Recommended  
valuesfor thetimer capacitors are between100pFand1nF.  
The third function of the ISET pin is as a FAULT output. In  
the event of an over-current fault, the ISET pin is forced to  
approximately 9V by the fault comparator. Thiscan beused  
to trip an external protection circuit which can disable the  
load or start a fault restart cycle.  
VCC: VCC isthe logic andcontrol power connection for this  
device. VCC current is the sum of active device supply  
current and the average OUT current. Knowing the  
maximum operating frequency and the MOSFET gate  
charge (Qg), average OUT current can be estimated by:  
ISNS: This input to the zero and over current comparators  
is specially built to allow operation over a ±5V dynamic  
range. In noisy systems or systems with very high Q  
inductors, it is desirable tofilterthe signal entering the ISNS  
input to prevent premature restart or fault cycles. For best  
IOUT = Q g × F  
To prevent noise problems, bypass VCC to GND with both  
a ceramic and an electrolytic capacitor.  
VFB: VFB is the error amplifier inverting input. This input  
serves as both the voltage sense input to the error amplifier  
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UC1852  
UC2852  
UC3852  
TYPICAL CHARACTERISTICS  
Error Amplifier Gain and Phase  
Max Frequency vs. Rset and Ct  
100  
80  
60  
40  
20  
0
1000  
100pF  
500pF  
1nF  
Phase  
3nF  
Gain  
(dB)  
Phase  
(deg)  
Maximum  
Frequency,  
Gain  
100  
kHz  
10  
-20  
1
10  
100  
10  
100  
1000  
10000  
Rset, k  
Frequency, kHz  
UDG-92005  
UDG-92006  
Max On-Time vs. Rset and Ct  
OUT Rise and Fall Time  
1000  
100  
10  
200  
150  
Fall Time  
Maximum  
On-Time  
10nF  
ns 100  
50  
µs  
3nF  
1nF  
Rise Time  
300pF  
100pF  
1
0
0
1
10  
100  
5
10  
Rset, kΩ  
Load Capacitance, nF  
UDG-92007  
UDG-92008  
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UC1852  
UC2852  
UC3852  
APPLICATION INFORMATION: A 100 Watt Power Factor Preregulator  
UDG-92004  
This circuit demonstrates a complete power factor preregulator based on the UC3852. This preregulatorwill supply  
up to 100 watts at 400VDC and exhibit power factor greater than 0.995 with less than 10% total harmonic distortion.  
Operating input range is 90V to 160V RMS at 50Hz to 60Hz.  
This design is intentionally simple, yet fully functional. The UC3852 can also be used in designs featuringsoft start,  
over-voltage protection, wide power-line voltage operation, and fault latching. For more information on applying  
the UC3852, refer to Unitrode Application Note U–132.  
PARTS LIST  
C1  
C2  
C3  
C4  
C5  
C6  
D1  
0.47µF/250VAC X2 Class Polyester  
1nF/16V Ceramic  
Q1  
L1  
IRF830 4.5A/500V 1.5Power FET  
680µH (Renco RL3792 with  
10 Turn 24 AWG Secondary)  
68µF/35V Aluminum Electrolytic  
180pF/16V Ceramic  
R1  
R2  
R3  
R4  
R5  
R6  
R7  
R8  
150k, 1W  
4
0.2, 1W Carbon Composition  
2
0.1µF/16V Polyester or Ceramic  
82µF/450V Aluminum Electrolytic  
10, 1W  
4
13.3k, 1W  
4
2A/500V Bridge Rectifier (Collmer  
KBPC106 or Powertex MB11A02V60)  
1M, 1W  
4
D2  
D3  
100mA/50V Switching Diode (1N4148)  
20k, 1W  
4
2A/500V 250ns Recovery-Time Rectifier  
(Motorola MR856)  
200k, 1W  
2
200k, 1W  
2
IC1 UC3852N Power Factor Controller IC  
UNITRODE INTEGRATED CIRCUITS  
7 CONTINENTAL BLVD. MERRIMACK, NH 03054  
TEL. (603) 424-2410 FAX (603) 424-3460  
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IMPORTANT NOTICE  
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue  
any product or service without notice, and advise customers to obtain the latest version of relevant information  
to verify, before placing orders, that information being relied on is current and complete. All products are sold  
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those  
pertaining to warranty, patent infringement, and limitation of liability.  
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in  
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent  
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily  
performed, except those mandated by government requirements.  
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF  
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL  
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR  
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER  
CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO  
BE FULLY AT THE CUSTOMER’S RISK.  
In order to minimize risks associated with the customer’s applications, adequate design and operating  
safeguards must be provided by the customer to minimize inherent or procedural hazards.  
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent  
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other  
intellectual property right of TI covering or relating to any combination, machine, or process in which such  
semiconductor products or services might be or are used. TI’s publication of information regarding any third  
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.  
Copyright 1999, Texas Instruments Incorporated  
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