UDT-555D [ETC]
Amplifier Hybrids; 放大器杂种
| 型号： | UDT-555D |
| 厂家： | 
ETC |
| 描述： | Amplifier Hybrids |
| 文件： | 总6页 (文件大小：452K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Photops ™
Photodiode-Amplifier Hybrids
The Photop™ Series, combines
a photodiode with an operational
amplifier in the same package. Photops™ general-purpose detectors
have spectral range from either 350 nm to 1100 nm or 200 nm to
a
1100nm. They have an integrated package ensuring low noise output
under a variety of operating conditions. These op-amps are specifically
selected by UDT Sensors engineers for compatibility to our photodiodes.
Among many of these specific parameters are low noise, low drift and
capability of supporting a variety of gains and bandwidths determined by
the external feedback components. Operation from DC level to several
MHz is possible in an either unbiased configuration for low speed, low
drift applications or biased for faster response time. LN-Series Photops™
are to be used with OV-bias.
ꢀ
ꢀ
APPLICATIONS
FEATURES
• General Purpose Light
Detection
• Detector/Amplifier
Combined
Any modification of the above devices is pos s ible. The modifications
can be s imply adding a bandpas s optical filter, integration of additional
chip (hybrid) components ins ide the s ame package, utilizing a different
op-amp, photodetector replacement, modified package des ign and / or
mount on PCB or ceramic. For your s pecific requirements , contact one
of our Applications Engineers .
• Laser Power Monitoring
• Medical Analysis
• Adjustable Gain/Bandwidth
• Low Noise
• Wide Bandwidth
• DIP Package
• Laser Communications
• Bar Code Readers
• Industrial Control Sensors
• Pollution Monitoring
• Guidance Systems
• Colorimeter
• Large Active Area
Great Britain: LASER COMPONENTS (UK) Ltd., Phone: +44 1245 491 499, Fax: +44 1245 491 801, info@lasercomponents.co.uk
Photops ™ (Photodiode Spe c ific a tions )
Typical Electro-Optical Specifications at TA=23ºC
Dark
Current
(nA)
Temp.*
Range
(°C)
Active
Area
Responsivity
(A/W)
Capacitance
(pF)
NEP
(W/ Hz)
√
Package
Style ¶
-10
mV
0 V
254 nm
-10V
970 nm
254 nm
970 nm
0 V
-10 V
-10 V
V
350-1100 nm Spectral Range
UDT-451
UDT-455
29 / DIP
5.1
2.54 φ
85
15
0.25
3
1.4 e- 14
30 / TO-5
UDT-455LN**
UDT-455HS
UDT-020D
---
0.60
0.65
---
30**
16
4.57 φ
11.3 φ
330
60
0.5
2
10
25
1.9 e- 14
3.9 e -14
31 / TO-8
UDT-555D
100
1500
300
32 / Special
200-1100 nm Spectral Range
UDT-455UV
2.54 φ
5.1
300
100
9.2 e -14
30 / TO-5
UDT-
455UV/LN**
UDT-020UV
UDT-055UV
16
50
4.57 φ
7.98 φ
1000
2500
50
20
1.3 e -13
2.1 e -13
31 / TO-8
0.10 0.14
---
---
---
5**
32 / Special
UDT-555UV
100
11.3 φ
4500
10
2.9 e -13
32 / Special
UDT-
555UV/LN**
Operational Amplifier Specifications Typical Electro-Optical Specifications at TA=23 ºC
Input
Noise
Input
Noise
Quiescent
Voltage
Current
Input
Offset
Voltage
Gain
Bandwidth
Product
Supply
Current
(mA)
Input Bias
Current
Open Loop
Gain, DC
Supply
Voltage
(V)
Slew Rate
V / µs
√
√
nV/ Hz
fA/ Hz
± 15 V
mV
µV / ºC
pA
MHz
V / mV
UDT-451
--- ±15
±18
±18
1.4
2.5
5.0
3.0
6.0
10
---
30
30
200
---
4.0
5.4
---
5
13
9
50
50
150
200
---
18
15
10
10
UDT-455
UDT-455UV
UDT-020D
UDT-020UV
UDT-455HS
UDT-455LN**
--- ±15
2.8
0.5
3
4
±80
±400
3.0
20
---
±5
±15
±15
±18
±18
4.8
0.9
8.0
1.8
0.5
3
1
4
30
20
±80
0.15
±500
0.3
11
26
1
25
40
3
50
50
200
20
78
15
27
10
0.26
---
0.5
0.5
2500
0.22
UDT-
455UV/LN**
UDT-055UV
UDT-555D
UDT-555UV
---
±15
±22
2.7
4.0
0.4
1
3
10
±40
±200
3.5
5.7
7.5
11
75
220
20
15
10
¶ For mechanical drawings please refer to pages 55 thru 66.
** LN – Series Devices are to be used with a 0V Bias.
* Non-Condensing temperature and Storage Range, Non-Condensing Environment.
Great Britain: LASER COMPONENTS (UK) Ltd., Phone: +44 1245 491 499, Fax: +44 1245 491 801, info@lasercomponents.co.uk
Photop Se rie s
Schematic Diagrams
The output voltage is proportional to the light intensity of the light and is
given by:
(1)
Frequency Res pons e (Photodiode/Amplifier Combination)
The frequency response of the photodiode / amplifier combination is
determined by the characteristics of the photodetector, pre-amplifier as
well as the feedback resistor (RF) and feedback capacitor (CF). For a
known gain, (RF), the 3dB frequency response of the detector/pre-amp
combination is given by:
(2)
However, the des ired frequency res pons e is limited by the Gain
Bandwidth Product (GBP) of the op-amp. In order to have
a stable
output, the values of the RF and CF must be chosen such that the 3dB
frequency response of the detector / pre-amp combination, be less than
the maximum frequency of the op-amp, i.e. f3dB fmax
.
(3)
where CA is the amplifier input capacitance.
In conclusion, an example for frequency response calculations, is given
below. For a gain of 108, an operating frequency of 100 Hz, and an op-
amp with GBP of 5 MHz:
(4)
Thus, for CF = 15.9 pF, CJ = 15 pF and CA = 7 pF, fmax is about 14.5 kHz.
Hence, the circuit is stable since f3dB fmax
.
For more detailed application specific discussions and further reading,
refer to the APPLICATION NOTES INDEX in the catalog.
Note: The s haded boxes repres ent the Photop™ components and their
c onne c tions . The c omp one nts outs id e the b oxe s a re typ ic a l
recommended connections and components .
Great Britain: LASER COMPONENTS (UK) Ltd., Phone: +44 1245 491 499, Fax: +44 1245 491 801, info@lasercomponents.co.uk
Photodiode Ca re a nd Ha ndling Ins truc tions
AVOID DIRECT LIGHT
Since the spectral response of silicon photodiode includes the visible light region, care must be taken to avoid photodiode exposure to high ambient
light levels, particularly from tungsten sources or sunlight. During shipment from UDT Sensors, your photodiodes are packaged in opaque, padded
containers to avoid ambient light exposure and damage due to shock from dropping or jarring.
AVOID SHARP PHYSICAL SHOCK
Photodiodes can be rendered inoperable if dropped or sharply jarred. The wire bonds are delicate and can become separated from the photodiode’s
bonding pads when the detector is dropped or otherwise receives a sharp physical blow.
CLEAN WINDOWS WITH OPTICAL GRADE CLOTH / TISSUE
Most windows on UDT Sensors photodiodes are either silicon or quartz. They should be cleaned with isopropyl alcohol and a soft (optical grade) pad.
OBSERVE STORAGE TEMPERATURES AND HUMIDITY LEVELS
Photodiode exposure to extreme high or low storage temperatures can affect the subsequent performance of a silicon photodiode. Storage temperature
guidelines are presented in the photodiode performance specifications of this catalog. Please maintain a non-condensing environment for optimum
performance and lifetime.
OBSERVE ELECTROSTATIC DISCHARGE (ESD) PRECAUTIONS
UDT Sensors photodiodes, especially with IC devices (e.g. Photops) are considered ESD sensitive. The photodiodes are shipped in ESD protective
packaging. When unpacking and using these products, anti-ESD precautions should be observed.
DO NOT EXPOSE PHOTODIODES TO HARSH CHEMICALS
Photodiode packages and/or operation may be impaired if exposed to CHLOROTHENE, THINNER, ACETONE, or TRICHLOROETHYLENE.
INSTALL WITH CARE
Most photodiodes in this catalog are provided with wire or pin leads for installation in circuit boards or sockets. Observe the soldering temperatures and
conditions specified below:
Soldering Iron:
Dip Soldering:
Soldering 30 W or less
Temperature at tip of iron 300°C or lower.
Bath Temperature:
Immersion Time:
Soldering Time:
260±5°C.
within 5 Sec.
within 3 Sec.
Vapor Phase Soldering:
Reflow Soldering:
DO NOT USE
DO NOT USE
Photodiodes in plastic packages should be given special care. Clear plastic packages are more sensitive to environmental stress than those of black
plastic. Storing devices in high humidity can present problems when soldering. Since the rapid heating during soldering stresses the wire bonds and can
cause wire to bonding pad separation, it is recommended that devices in plastic packages to be baked for 24 hours at 85°C.
The leads on the photodiode SHOULD NOT BE FORMED. If your application requires lead spacing modification, please contact UDT Sensors
Applications group at (310)978-0516 before forming a product’s leads. Product warranties could be voided.
Great Britain: LASER COMPONENTS (UK) Ltd., Phone: +44 1245 491 499, Fax: +44 1245 491 801, info@lasercomponents.co.uk
1. Pa ra m e te r De finitions :
A = Distance from top of chip to top of glass.
a = Photodiode Anode.
B = Distance from top of glass to bottom of case.
c = Photodiode Cathode
(Note: cathode is common to case in metal package products unless otherwise noted).
W = Window Diameter.
F. O.V. = Filed of View (see definition below).
2. Dim e ns ions a re in inc he s (1 inc h = 25.4 m m ).
3. Pin dia m e te rs a re 0.018 ± 0.002" unle s s othe rwis e s pe c ifie d.
4. Tole ra nc e s (unless otherwise noted)
General: 0.XX ±0.01"
0.XXX ±0.005"
Chip Centering: ±0.010"
Dimension ‘A’: ±0.015"
5. Windows
All ‘UV’ Enhanced products are provided with QUARTZ glass windows,
0.027 ± 0.002" thick.
All ‘XUV’ products are provided with removable windows.
All ‘DLS’ PSD products are provided with A/R coated glass windows.
All ‘FIL’ photoconductive and photovoltaic products are epoxy filled instead of
glass windows.
Great Britain: LASER COMPONENTS (UK) Ltd., Phone: +44 1245 491 499, Fax: +44 1245 491 801, info@lasercomponents.co.uk
Me c ha nic a l Spe c ific a tions
All units in inches . Pinouts are bottom view.
www.lasercomponents.com
Issue: 02/04 / V1 / HW / www/pdf/udt/ photops.pdf
Great Britain: LASER COMPONENTS (UK) Ltd., Phone: +44 1245 491 499, Fax: +44 1245 491 801, info@lasercomponents.co.uk
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