UNR211N(UN211N) [ETC]

Composite Device - Transistors with built-in Resistor ; 复合器件 - 晶体管具有内置电阻\n
UNR211N(UN211N)
型号: UNR211N(UN211N)
厂家: ETC    ETC
描述:

Composite Device - Transistors with built-in Resistor
复合器件 - 晶体管具有内置电阻\n

晶体 晶体管
文件: 总17页 (文件大小:282K)
下载:  下载PDF数据表文档文件

UNR211N|UN211N

Composite Device - Transistors with built-in Resistor

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2 ETC

UNR211NQ

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINI3-G1, SC-59, 3 PIN

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0 PANASONIC

UNR211T

Silicon PNP epitaxial planar type

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13 PANASONIC

UNR211T

Silicon PNP epitaxial planar type

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7 PANASONIC

UNR211T(UN211T)

Composite Device - Transistors with built-in Resistor

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6 ETC

UNR211T|UN211T

Composite Device - Transistors with built-in Resistor

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5 ETC

UNR211TQ

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINI3-G1, SC-59, 3 PIN

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0 PANASONIC

UNR211TS

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINI3-G1, SC-59, 3 PIN

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0 PANASONIC

UNR211V

Silicon PNP epitaxial planar type

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18 PANASONIC

UNR211V

Silicon PNP epitaxial planar type

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5 PANASONIC

UNR211V(UN211V)

Composite Device - Transistors with built-in Resistor

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5 ETC

UNR211V|UN211V

Composite Device - Transistors with built-in Resistor

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4 ETC

UNR211VR

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINI3-G1, SC-59, 3 PIN

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0 PANASONIC

UNR211VS

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINI3-G1, SC-59, 3 PIN

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0 PANASONIC

UNR211W

Composite Device - Transistors with built-in Resistor

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11 ETC