UNR2210S [ETC]
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-59 ; 晶体管| 50V V（ BR ） CEO | 100MA I（C ） | SC- 59
| 型号： | UNR2210S |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-59
|
| 文件： | 总18页 (文件大小：283K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors with built-in Resistor
UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
(UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z)
Unit: mm
Silicon NPN epitaxial planer transistor
2.8 –+00..32
1.5 +–00..0255
0.65±0.15
0.65±0.15
For digital circuits
1
2
Features
■
3
■
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
■
Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
Resistance by Part Number
■
Marking Symbol (R1)
(R2)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
4.7kΩ
4.7kΩ
47kΩ
47kΩ
47kΩ
2.2kΩ
22kΩ
0.1 to 0.3
■
■
■
■
■
■
■
■
■
■
■
■
■
■
■
■
■
■
■
■
UNR2211
UNR2212
UNR2213
UNR2214
UNR2215
UNR2216
UNR2217
UNR2218
UNR2219
UNR2210
UNR221D
UNR221E
UNR221F
UNR221K
UNR221L
UNR221M
UNR221N
UNR221T
UNR221V
UNR221Z
8A
8B
8C
8D
8E
8F
10kΩ
22kΩ
47kΩ
10kΩ
10kΩ
4.7kΩ
22kΩ
0.51kΩ
1kΩ
47kΩ
47kΩ
47kΩ
4.7kΩ
10kΩ
4.7kΩ
2.2kΩ
4.7kΩ
22kΩ
2.2kΩ
4.7kΩ
0.4±0.2
1:Base
2:Emitter
EIAJ:SC-59
Mini Type Package
3:Collector
8H
8I
Internal Connection
8K
8L
8M
8N
8O
8P
8Q
EL
EX
EZ
FD
FF
C
E
R1
B
R2
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Symbol
VCBO
VCEO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Collector current
50
50
V
100
mA
mW
˚C
Total power dissipation
Junction temperature
Storage temperature
PT
200
Tj
150
Tstg
–55 to +150
˚C
Note) The part numbers in the parenthesis show conventional part number.
1
UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
Conditions
VCB = 50V, IE = 0
VCE = 50V, IB = 0
min
typ
max
Unit
ICBO
0.1
µA
Collector cutoff current
ICEO
0.5
0.5
0.2
0.1
0.01
1.0
1.5
2.0
0.4
µA
UNR2211
UNR2212/2214/221E/221D/221M/221N/221T
UNR2213
Emitter
cutoff
current
UNR2215/2216/2217/2210
UNR221F/221K
UNR2219
IEBO
VEB = 6V, IC = 0
mA
UNR2218/221L/221V
UNR221Z
Collector to base voltage
Collector to emitter voltage
UNR2211
VCBO
VCEO
IC = 10µA, IE = 0
50
50
35
60
80
160
30
20
80
60
V
V
IC = 2mA, IB = 0
UNR2212/221E
UNR2213/2214/221M
Forward
current
transfer
ratio
UNR2215*/2216*/2217*/2210*
UNR221F/221D/2219
UNR2218/221K/221L
UNR221N/221T
460
hFE
VCE = 10V, IC = 5mA
400
200
—
UNR221V
Collector to emitter saturation voltage
UNR221V
IC = 10mA, IB = 0.3mA
0.25
0.25
VCE(sat)
VOH
V
V
IC = 10mA, IB = 1.5mA
0.04
Output voltage high level
Output voltage low level
UNR2213/221K
VCC = 5V, VB = 0.5V, RL = 1kΩ
VCC = 5V, VB = 2.5V, RL = 1kΩ
VCC = 5V, VB = 3.5V, RL = 1kΩ
VCC = 5V, VB = 10V, RL = 1kΩ
VCC = 5V, VB = 6V, RL = 1kΩ
VCB = 10V, IE = –2mA, f = 200MHz
4.9
0.2
0.2
0.2
0.2
V
VOL
UNR221D
UNR221E
Transition frequency
UNR2211/2214/2215/221K
UNR2212/2217/221T
fT
150
10
MHz
22
UNR2213/221D/221E/2210
Input
47
UNR2216/221F/221L/221N/221Z R1
(–30%)
4.7
0.51
1
(+30%)
kΩ
resis-
tance
UNR2218
UNR2219
UNR221M/221V
2.2
* hFE rank classification (UNR2215/2216/2217/2210)
Rank
hFE
Q
R
S
160 to 260
210 to 340
290 to 460
2
UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Electrical Characteristics (continued) (Ta=25˚C)
■
Parameter
UNR2211/2212/2213/221L
UNR2214
Symbol
Conditions
min
0.8
typ
1.0
max
1.2
Unit
0.17
0.08
0.21
0.1
0.25
0.12
UNR2218/2219
UNR221D
4.7
UNR221E
2.14
0.47
2.13
0.047
0.1
Resis-
tance
ratio
UNR221F/221T
R1/R2
UNR221K
UNR221M
UNR211N
UNR211V
UNR211Z
1.0
0.21
3
UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Common characteristics chart
PT — Ta
250
200
150
100
50
0
0
20 40 60 80 100 120 140 160
(
)
Ambient temperature Ta ˚C
Characteristics charts of UNR2211
IC — VCE
VCE(sat) — IC
hFE — IC
160
140
120
100
80
400
300
200
100
0
100
IC/IB=10
Ta=25˚C
VCE=10V
Ta=75˚C
IB=1.0mA
0.9mA
30
10
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
3
1
60
25˚C
0.3
0.1
25˚C
Ta=75˚C
0.2mA
–25˚C
40
–25˚C
20
0.03
0.01
0.1mA
10
0
0
2
4
6
8
12
1
3
10
30
100 300 1000
0.1 0.3
1
3
10
30
100
(
V
)
Collector to emitter voltage VCE
(
)
(
)
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
10000
100
VO=5V
Ta=25˚C
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
3000
1000
30
10
300
100
3
1
30
10
0.3
0.1
3
1
0.03
0.01
0.1 0.3
1
3
10
30
100
0.4
0.6
0.8
1.0
1.2
1.4
0.1 0.3
1
3
10
30
100
(
V
)
( )
Input voltage VIN V
Collector to base voltage VCB
(
)
Output current IO mA
4
UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Characteristics charts of UNR2212
IC — VCE
VCE(sat) — IC
hFE — IC
160
140
120
100
80
100
400
300
200
100
0
IC/IB=10
VCE=10V
Ta=75˚C
Ta=25˚C
30
10
IB=1.0mA
0.9mA
0.7mA
0.6mA
0.5mA
0.8mA
3
1
0.4mA
0.3mA
0.2mA
25˚C
60
0.3
0.1
25˚C
Ta=75˚C
–25˚C
40
–25˚C
20
0.03
0.01
0.1mA
0
0
2
4
6
8
10
12
0.1 0.3
1
3
10
30
100
1
3
10
30
100 300 1000
( )
V
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
100
10000
VO=5V
Ta=25˚C
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
3000
1000
30
10
300
100
3
1
30
10
0.3
0.1
3
1
0.03
0.01
0.1 0.3
1
3
10
30
100
0.4
0.6
0.8
1.0
1.2
1.4
0.1 0.3
1
3
10
30
100
(
V
)
(
V
)
(
)
Collector to base voltage VCB
Input voltage VIN
Output current IO mA
Characteristics charts of UNR2213
IC — VCE
VCE(sat) — IC
hFE — IC
100
400
350
300
250
200
150
100
50
160
140
120
100
80
IC/IB=10
VCE=10V
Ta=25˚C
IB=1.0mA
30
0.9mA
0.8mA
0.7mA
0.6mA
Ta=75˚C
25˚C
10
0.5mA
0.4mA
0.3mA
3
1
–25˚C
60
0.3
0.1
Ta=75˚C
25˚C
0.2mA
0.1mA
10
40
–25˚C
20
0.03
0.01
0
0
0.1 0.3
1
3
10
30
100
1
3
10
30
100 300 1000
0
2
4
6
8
12
( )
Collector current IC mA
(
)
( )
V
Collector current IC mA
Collector to emitter voltage VCE
5
UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Cob — VCB
IO — VIN
VIN — IO
100
6
5
4
3
2
1
0
10000
VO=0.2V
Ta=25˚C
VO=5V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
30
10
3000
1000
3
1
300
100
0.3
0.1
30
10
0.03
0.01
3
1
0.1 0.3
1
3
10
30
100
0.1 0.3
1
3
10
30
100
0.4
0.6
0.8
1.0
1.2
1.4
(
)
(
V
)
( )
V
Output current IO mA
Collector to base voltage VCB
Input voltage VIN
Characteristics charts of UNR2214
IC — VCE
VCE(sat) — IC
hFE — IC
400
350
300
250
200
150
100
50
160
140
120
100
80
100
IC/IB=10
VCE=10V
Ta=25˚C
30
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
10
3
1
0.5mA
0.4mA
Ta=75˚C
25˚C
0.3mA
0.2mA
0.1mA
60
0.3
0.1
Ta=75˚C
–25˚C
25˚C
40
20
0.03
0.01
–25˚C
0
0
100 300 1000
0
2
4
6
8
10
12
0.1 0.3
1
3
10
30
100
1
3
10
30
( )
V
(
)
Collector current IC mA
(
)
Collector current IC mA
Collector to emitter voltage VCE
Cob — VCB
IO — VIN
VIN — IO
10000
100
6
5
4
3
2
1
0
VO=5V
Ta=25˚C
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
3000
1000
30
10
300
100
3
1
30
10
0.3
0.1
3
1
0.03
0.01
0.4
0.6
0.8
1.0
1.2
1.4
0.1 0.3
1
3
10
30
100
0.1 0.3
1
3
10
30
100
(
V
)
(
)
(
V
)
Input voltage VIN
Output current IO mA
Collector to base voltage VCB
6
UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Characteristics charts of UNR2215
IC — VCE
VCE(sat) — IC
hFE — IC
100
400
350
300
250
200
150
100
50
160
140
120
100
80
IC/IB=10
VCE=10V
Ta=75˚C
Ta=25˚C
IB=1.0mA
0.9mA
30
10
0.8mA
0.7mA
0.6mA
0.5mA
3
1
0.4mA
25˚C
0.3mA
0.2mA
0.1mA
60
0.3
0.1
–25˚C
Ta=75˚C
25˚C
40
20
0.03
0.01
–25˚C
0
0
1
3
10
30
100 300 1000
0.1 0.3
1
3
10
30
100
0
2
4
6
8
10
12
(
)
(
)
( )
V
Collector current IC mA
Collector current IC mA
Collector to emitter voltage VCE
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
10000
100
VO=5V
Ta=25˚C
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
3000
1000
30
10
300
100
3
1
30
10
0.3
0.1
3
1
0.03
0.01
0.1 0.3
1
3
10
30
100
0.4
0.6
0.8
1.0
1.2
1.4
0.1 0.3
1
3
10
30
100
(
V
)
(
V
)
(
)
Collector to base voltage VCB
Input voltage VIN
Output current IO mA
Characteristics charts of UNR2216
IC — VCE
VCE(sat) — IC
hFE — IC
100
400
350
300
250
200
150
100
50
160
140
120
100
80
IC/IB=10
VCE=10V
Ta=25˚C
30
IB=1.0mA
Ta=75˚C
25˚C
0.9mA
10
0.8mA
0.7mA
0.6mA
3
1
0.5mA
0.4mA
–25˚C
0.3mA
0.2mA
60
0.3
0.1
Ta=75˚C
25˚C
40
20
0.03
0.01
0.1mA
–25˚C
0
0
0
2
4
6
8
10
12
0.1 0.3
1
3
10
30
100
1
3
10
30
100 300 1000
( )
V
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
7
UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Cob — VCB
IO — VIN
VIN — IO
100
6
5
4
3
2
1
0
10000
VO=5V
Ta=25˚C
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
3000
1000
30
10
300
100
3
1
30
10
0.3
0.1
3
1
0.03
0.01
0.1 0.3
30
100
0.1 0.3
1
3
10
30
(
100
)
0.4
0.6
0.8
1.0
1.2
1.4
1
3
10
( )
V
(
)
Output current IO mA
Collector to base voltage VCB
V
Input voltage VIN
Characteristics charts of UNR2217
IC — VCE
VCE(sat) — IC
hFE — IC
120
100
80
60
40
20
0
100
400
350
300
250
200
150
100
50
IC/IB=10
Ta=25˚C
VCE=10V
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
30
10
3
1
0.4mA
0.3mA
0.2mA
Ta=75˚C
Ta=75˚C
25˚C
0.3
0.1
25˚C
–25˚C
0.1mA
0.03
0.01
–25˚C
0
0
2
4
6
8
10
12
0.1 0.3
1
3
10
30
100
1
3
10
30
100 300 1000
( )
V
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
10000
100
VO=5V
Ta=25˚C
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
3000
1000
30
10
300
100
3
1
30
10
0.3
0.1
3
1
0.03
0.01
0.1 0.3
1
3
10
30
100
0.4
0.6
0.8
1.0
1.2
1.4
0.1 0.3
1
3
10
30
100
(
V
)
( )
V
(
)
Collector to base voltage VCB
Input voltage VIN
Output current IO mA
8
UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Characteristics charts of UNR2218
IC — VCE
VCE(sat) — IC
hFE — IC
240
200
160
120
80
100
160
120
80
40
0
IC/IB=10
Ta=25˚C
VCE=10V
30
10
IB=1.0mA
0.9mA
0.8mA
0.7mA
3
1
Ta=75˚C
Ta=75˚C
0.6mA
0.5mA
0.4mA
25˚C
0.3
0.1
–25˚C
25˚C
0.3mA
0.2mA
0.1mA
40
0.03
0.01
–25˚C
0
0
2
4
6
8
10
12
0.1 0.3
1
3
10
30
100
1
3
10
30
100 300 1000
( )
V
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
10000
100
VO=5V
Ta=25˚C
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
3000
1000
30
10
300
100
3
1
30
10
0.3
0.1
3
1
0.03
0.01
0.1 0.3
1
3
10
30
100
0.4
0.6
0.8
1.0
1.2
1.4
0.1 0.3
1
3
10
30
100
(
V
)
(
V
)
(
)
Collector to base voltage VCB
Input voltage VIN
Output current IO mA
Characteristics charts of UNR2219
IC — VCE
VCE(sat) — IC
hFE — IC
100
160
120
80
40
0
240
200
160
120
80
IC/IB=10
Ta=25˚C
VCE=10V
30
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
10
3
1
Ta=75˚C
25˚C
–25˚C
Ta=75˚C
0.3
0.1
0.5mA
0.4mA
25˚C
0.3mA
40
0.2mA
0.1mA
0.03
0.01
–25˚C
0
0.1 0.3
1
3
10
30
100
1
3
10
30
100 300 1000
0
2
4
6
8
10
12
(
)
( )
Collector current IC mA
( )
V
Collector current IC mA
Collector to emitter voltage VCE
9
UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Cob — VCB
IO — VIN
VIN — IO
10000
100
6
5
4
3
2
1
0
VO=5V
Ta=25˚C
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
3000
1000
30
10
300
100
3
1
30
10
0.3
0.1
3
1
0.03
0.01
0.4
0.6
0.8
1.0
1.2
1.4
0.1 0.3
1
3
10
30
100
0.1 0.3
1
3
10
30
(
100
)
( )
V
(
)
Input voltage VIN
Output current IO mA
Collector to base voltage VCB
V
Characteristics charts of UNR2210
IC — VCE
VCE(sat) — IC
hFE — IC
60
50
40
30
20
10
0
100
400
350
300
250
200
150
100
50
IC/IB=10
IB=1.0mA
0.9mA
0.8mA
Ta=25˚C
VCE=10V
30
10
Ta=75˚C
3
1
0.4mA
0.5mA
0.6mA
0.7mA
25˚C
0.3mA
Ta=75˚C
–25˚C
0.3
0.1
0.1mA
25˚C
0.03
0.01
–25˚C
0
0
2
4
6
8
10
12
0.1 0.3
1
3
10
30
100
1
3
10
30
100 300 1000
( )
V
Collector to emitter voltage VCE
(
)
(
)
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
10000
100
VO=5V
Ta=25˚C
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
3000
1000
30
10
300
100
3
1
30
10
0.3
0.1
3
1
0.03
0.01
0.1 0.3
1
3
10
30
(
100
)
0.4
0.6
0.8
1.0
1.2
1.4
0.1 0.3
1
3
10
30
100
(
V
)
(
)
Collector to base voltage VCB
V
Input voltage VIN
Output current IO mA
10
UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Characteristics charts of UNR221D
IC — VCE
VCE(sat) — IC
hFE — IC
30
25
20
15
10
5
100
160
120
80
40
0
IC/IB=10
Ta=25˚C
VCE=10V
0.9mA
Ta=75˚C
0.8mA
0.5mA
0.4mA
0.3mA
30
10
0.7mA
0.6mA
25˚C
–25˚C
IB=1.0mA
3
1
0.2mA
0.1mA
0.3
0.1
Ta=75˚C
25˚C
–25˚C
0.03
0.01
0
0
2
4
6
8
10
12
0.1 0.3
1
3
10
30
100
1
3
10
30
100 300 1000
( )
V
Collector to emitter voltage VCE
(
)
(
)
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
10000
100
VO=5V
Ta=25˚C
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
3000
1000
30
10
300
100
3
1
30
10
0.3
0.1
3
1
0.03
0.01
0.1 0.3
1
3
10
30
100
1.5
2.0
2.5
3.0
3.5
4.0
0.1 0.3
1
3
10
30
100
(
V
)
(
V
)
(
)
Collector to base voltage VCB
Input voltage VIN
Output current IO mA
Characteristics charts of UNR221E
IC — VCE
VCE(sat) — IC
hFE — IC
100
160
120
80
40
0
60
50
40
30
20
10
0
IB=1.0mA
0.9mA
IC/IB=10
0.7mA
Ta=25˚C
VCE=10V
Ta=75˚C
0.6mA
0.8mA
30
10
25˚C
3
1
–25˚C
0.2mA
0.1mA
0.3mA
0.4mA
0.5mA
Ta=75˚C
0.3
0.1
25˚C
0.03
0.01
–25˚C
0.1 0.3
1
3
10
30
100
1
3
10
30
100 300 1000
0
2
4
6
8
10
12
(
)
(
)
( )
V
Collector current IC mA
Collector current IC mA
Collector to emitter voltage VCE
11
UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
100
10000
VO=0.2V
Ta=25˚C
VO=5V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
30
10
3000
1000
3
1
300
100
0.3
0.1
30
10
0.03
0.01
3
1
0.1 0.3
1
3
10
30
100
0.1 0.3
1
3
10
30
100
1.5
2.0
2.5
3.0
3.5
4.0
(
V
)
(
)
Collector to base voltage VCB
(
V
)
Output current IO mA
Input voltage VIN
Characteristics charts of UNR221F
IC — VCE
VCE(sat) — IC
hFE — IC
160
120
80
40
0
240
200
160
120
80
100
IC/IB=10
Ta=25˚C
0.9mA
VCE=10V
30
10
0.8mA
0.7mA
0.6mA
3
1
Ta=75˚C
Ta=75˚C
25˚C
–25˚C
IB=1.0mA
0.3
0.1
0.5mA
0.4mA
0.3mA
25˚C
40
0.03
0.01
0.2mA
0.1mA
–25˚C
0
1
3
10
30
100 300 1000
0
2
4
6
8
10
12
0.1 0.3
1
3
10
30
100
(
)
( )
V
(
)
Collector current IC mA
Collector to emitter voltage VCE
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
100
10000
VO=0.2V
Ta=25˚C
VO=5V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
30
10
3000
1000
3
1
300
100
0.3
0.1
30
10
0.03
0.01
3
1
0.1 0.3
1
3
10
30
100
0.1 0.3
1
3
10
30
100
0.4
0.6
0.8
1.0
1.2
1.4
(
V
)
Collector to base voltage VCB
(
)
(
V
)
Output current IO mA
Input voltage VIN
12
UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Characteristics charts of UNR221K
IC — VCE
VCE(sat) — IC
hFE — IC
240
200
160
120
80
100
10
240
200
160
120
80
IC/IB=10
Ta=25˚C
VCE=10V
Ta=75˚C
25˚C
IB=1.2mA
1.0mA
1
0.8mA
0.6mA
Ta=75˚C
25˚C
–25˚C
0.1
0.01
0.4mA
0.2mA
–25˚C
40
40
0
0
0
2
4
6
8
10
12
1
3
10
30
100 300 1000
1
3
10
30
100 300 1000
( )
V
Collector to emitter voltage VCE
(
)
(
)
Collector current IC mA
Collector current IC mA
Cob — VCB
VIN — IO
6
5
4
3
2
1
0
100
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
30
10
3
1
0.3
0.1
0.03
0.01
1
3
10
30
100
0.1 0.3
1
3
10
30
100
(
V
)
Collector to base voltage VCB
(
)
Output current IO mA
Characteristics charts of UNR221L
IC — VCE
VCE(sat) — IC
hFE — IC
240
200
160
120
80
100
240
200
160
120
80
IC/IB=10
Ta=25˚C
VCE=10V
10
1
Ta=75˚C
IB=1.0mA
0.8mA
25˚C
0.6mA
–25˚C
Ta=75˚C
25˚C
0.4mA
0.1
0.01
40
40
–25˚C
0.2mA
0
0
0
2
4
6
8
10
12
1
3
10
30
100 300 1000
1
3
10
30
100 300 1000
( )
V
(
)
Collector to emitter voltage VCE
Collector current IC mA
(
)
Collector current IC mA
13
UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Cob — VCB
IO — VIN
100
10
6
5
4
3
2
1
0
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
1
0.1
0.01
0.1 0.3
1
3
10
30
100
1
3
10
30
100
(
)
(
V
)
Output current IO mA
Collector to base voltage VCB
Characteristics charts of UNR221M
IC — VCE
VCE(sat) — IC
hFE — IC
10
500
400
300
200
100
0
240
200
160
120
80
IC/IB=10
Ta=25˚C
VCE=10V
3
1
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.3
0.1
Ta=75˚C
Ta=75˚C
25˚C
0.6mA
0.5mA
0.4mA
0.3mA
25˚C
0.03
0.01
–25˚C
0.2mA
0.1mA
–25˚C
40
0.003
0.001
0
1
3
10
30
100 300 1000
1
3
10
30
100 300 1000
0
2
4
6
8
10
12
(
)
(
)
Collector current IC mA
Collector current IC mA
( )
V
Collector to emitter voltage VCE
Cob — VCB
IO — VIN
VIN — IO
104
103
102
101
1
100
5
4
3
2
1
0
VO=5V
Ta=25˚C
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
30
10
3
1
0.3
0.1
0.03
0.01
0.4
0.6
0.8
1.0
1.2
1.4
0.1 0.3
1
3
10
30
100
0.1 0.3
1
3
10
30
(
100
)
(
V
)
(
)
Input voltage VIN
Output current IO mA
Collector to base voltage VCB
V
14
UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Characteristics charts of UNR221N
IC — VCE
VCE(sat) — IC
hFE — IC
10
480
400
320
240
160
80
160
140
120
100
80
IC/IB=10
VCE=10V
Ta=25˚C
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
Ta=75˚C
1
0.4mA
25˚C
0.3mA
60
–25˚C
Ta=75˚C
0.2mA
0.1mA
0.1
0.01
25˚C
40
20
–25˚C
0
0
0
2
4
6
8
10
12
1
10
100
1000
1
10
100
1000
(
V
)
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
10000
1000
100
10
100
VO=5V
Ta=25˚C
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
10
1
0.1
0.01
1
0.4
1
10
100
0.6
0.8
1
1.2
1.4
0.1
1
10
100
(
V
)
( )
V
(
)
Collector to base voltage VCB
Input voltage VIN
Output current IO mA
Characteristics charts of UNR221T
IC — VCE
VCE(sat) — IC
hFE — IC
160
140
120
100
80
10
480
400
320
240
160
80
IC/IB=10
VCE=10V
Ta=25˚C
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
Ta=75˚C
–25˚C
1
0.4mA
25˚C
0.3mA
60
Ta=75˚C
0.2mA
0.1
25˚C
40
0.1mA
20
–25˚C
0
0.01
0
0
2
4
6
8
10
12
1
10
100
1000
1
10
100
1000
(
V
)
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
15
UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Cob — VCB
IO — VIN
VIN — IO
6
5
4
3
2
1
0
100
10
10000
1000
100
10
VO=5V
Ta=25˚C
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
1
0.1
0.01
1
0.4
1
10
100
0.1
1
10
100
0.6
0.8
1
1.2
1.4
(
V
)
(
)
(
V
)
Collector to base voltage VCB
Output current IO mA
Input voltage VIN
Characteristics charts of UNR221V
IC — VCE
VCE(sat) — IC
hFE — IC
240
10
160
IC/IB=10
VCE=10V
Ta=25˚C
IB=1.0mA
140
120
100
80
200
160
120
80
1
0.9mA
0.8mA
0.7mA
Ta=75˚C
25˚C
0.6mA
Ta=75˚C
25˚C
60
0.5mA
0.4mA
0.1
40
–25˚C
–25˚C
40
20
0.3mA
0.2mA
0.01
0
0
1
10
100
1000
1
10
100
1000
0
2
4
6
8
10
12
(
)
(
)
( )
V
Collector current IC mA
Collector current IC mA
Collector to emitter voltage VCE
Cob — VCB
IO — VIN
VIN — IO
100
10
6
5
4
3
2
1
0
10000
1000
100
10
VO=0.2V
Ta=25˚C
VO=5V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
1
0.1
0.01
1
0.4
0.1
1
10
100
1
10
100
0.6
0.8
1
1.2
1.4
(
)
Output current IO mA
(
V
)
( )
Input voltage VIN V
Collector to base voltage VCB
16
UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Characteristics charts of UNR221Z
IC — VCE
VCE(sat) — IC
hFE — IC
480
400
320
240
160
80
10
160
140
120
100
80
IC/IB=10
VCE=10V
Ta=25˚C
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
1
Ta=75˚C
0.4mA
0.3mA
25˚C
Ta=75˚C
25˚C
60
–25˚C
0.2mA
0.1mA
0.1
0.01
40
–25˚C
20
0
0
1
10
100
1000
0
2
4
6
8
10
12
1
10
100
1000
(
)
( )
V
(
)
Collector current IC mA
Collector to emitter voltage VCE
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
6
10000
1000
100
10
100
10
VO=5V
Ta=25˚C
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
1
0.1
0.01
1
0.4
–1
–10
–100
0.6
0.8
1
1.2
1.4
0.1
1
10
100
(
V
)
(
V
)
(
)
Collector to base voltage VCB
Input voltage VIN
Output current IO mA
17
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Govern-
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2001 MAR
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