UNR221L(UN221L)
更新时间:2024-09-18 02:59:38
品牌:ETC
描述:Composite Device - Transistors with built-in Resistor
UNR221L(UN221L) 概述
Composite Device - Transistors with built-in Resistor
复合器件 - 晶体管具有内置电阻\n
UNR221L(UN221L) 数据手册
通过下载UNR221L(UN221L)数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载Transistors with built-in Resistor
UNR22XX Series (UN22XX Series)
Silicon NPN epitaxial planer transistor
Unit: mm
+0.10
–0.05
0.40
+0.10
For digital circuits
0.16
–0.06
3
■ Features
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
1
2
• Mini type package, allowing downsizing of the equipment and
(0.95) (0.95)
automatic insertion through tape packing and magazine packing.
1.9±0.1
+0.20
2.90
–0.05
■ Resistance by Part Number
10˚
Marking Symbol (R1)
(R2)
• UNR2210 (UN2210)
• UNR2211 (UN2211)
• UNR2212 (UN2212)
• UNR2213 (UN2213)
• UNR2214 (UN2214)
• UNR2215 (UN2215)
• UNR2216 (UN2216)
• UNR2217 (UN2117)
• UNR2218 (UN2218)
• UNR2219 (UN2219)
• UNR221D (UN221D)
• UNR221E (UN221E)
• UNR221F (UN221F)
• UNR221K (UN221K)
• UNR221L (UN221L)
8L
8A
8B
8C
8D
8E
8F
8H
8I
8K
8M
8N
8O
8P
8Q
47 kΩ
10 kΩ
22 kΩ
47 kΩ
10 kΩ
10 kΩ
4.7 kΩ
22 kΩ
0.51 kΩ
1 kΩ
47 kΩ
47 kΩ
4.7 kΩ
10 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
22 kΩ
2.2 kΩ
4.7 kΩ
10 kΩ
22 kΩ
47 kΩ
47 kΩ
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Internal Connection
5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
4.7 kΩ
4.7 kΩ
47 kΩ
47 kΩ
47 kΩ
2.2 kΩ
22 kΩ
R1
B
C
E
R2
• UNR221M (UN221M) EL
• UNR221N (UN221N)
• UNR221T (UN221T)
• UNR221V (UN221V)
• UNR221Z (UN221Z)
EX
EZ
FD
FF
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Symbol
VCBO
VCEO
IC
Rating
Unit
V
50
50
V
100
mA
mW
°C
Total power dissipation
Junction temperature
Storage temperature
PT
200
Tj
150
Tstg
−55 to +150
°C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: January 2002
SJH00010BED
1
UNR22XX Series
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
ICBO
Conditions
CB = 50 V, IE = 0
Min
Typ
Max
0.1
0.5
0.5
0.2
Unit
Collector cutoff current
V
V
V
µA
ICEO
CE = 50 V, IB = 0
EB = 6 V, IC = 0
Emitter
cutoff
UNR2211
IEBO
mA
UNR2212/2214/221D/
221E/221M/221N/221T
current
UNR2213
0.1
0.01
1.0
UNR2210/2215/2216/2217
UNR221F/221K
UNR2219
1.5
UNR2218/221L/221V
UNR221Z
2.0
0.4
Collector to base voltage
Collector to emitter voltage
Forward UNR2211
VCBO
VCEO
hFE
I
C = 10 µA, IE = 0
C = 2 mA, IB = 0
50
50
35
60
V
V
I
V
CE = 10 V, IC = 5 mA
current
UNR2212/221E
transfer
ratio
UNR2213/2214/221M
UNR2210*/2215*/2216*/2217*
80
160
20
30
80
6
460
UNR2218/221K/221L
UNR2219/221D/221F
UNR221N/221T
UNR221V
400
20
UNR221Z
60
200
0.25
0.25
Collector to emitter saturation voltage
UNR221V
VCE(sat)
I
C = 10 mA, IB = 0.3 mA
C = 10 mA, IB = 1.5 mA
V
I
0.04
Output voltage high level
Output voltage low level
UNR2213/221K
VOH
VOL
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
VCC = 5 V, VB = 2.5 V, RL = 1 kΩ
VCC = 5 V, VB = 3.5 V, RL = 1 kΩ
VCC = 5 V, VB = 10 V, RL = 1 kΩ
VCC = 5 V, VB = 6 V, RL = 1 kΩ
VCB = 10 V, IE = −2 mA, f = 200 MHz
4.9
V
V
0.2
UNR221D
UNR221E
Transition frequency
fT
150
MHz
Input
resis-
tance
UNR2218
R1
−30% 0.51 +30%
kΩ
UNR2219
1
UNR221M/221V
2.2
4.7
UNR2216/221F/221L/221N
UNR221Z
UNR2211/2214/2215/221K
UNR2212/2217/221T
UNR2210/2213/221D/221E
10
22
47
Note) : hFE rank classification (UNR2210/2215/2216/2217)
*
Rank
Q
R
S
hFE
160 to 260
210 to 340
290 to 460
SJH00010BED
2
UNR22XX Series
■ Electrical Characteristics (continued) Ta = 25°C
Parameter
UNR2211/2212/2213/221L
UNR2214
Symbol
Conditions
Min
0.8
Typ
1.0
Max
1.2
Unit
Resis-
tance
ratio
R1/R2
0.17
0.08
0.21
0.1
0.25
0.12
UNR2218/2219
UNR221D
4.7
UNR221E
2.14
0.47
2.13
0.047
0.1
UNR221F/221T
UNR221K
UNR221M
UNR221N
UNR221V
1.0
UNR221Z
0.21
Common characteristics chart
PT Ta
250
200
150
100
50
0
0
20 40 60 80 100 120 140 160
(
)
Ambient temperature Ta °C
Characteristics charts of UNR2210
IC VCE
VCE(sat)
IC
hFE
IC
100
60
400
350
300
250
200
150
100
50
IC / IB = 10
IB = 1.0 mA
Ta = 25°C
VCE = 10 V
0.9 mA
0.8 mA
30
10
50
40
Ta = 75°C
3
1
0.4 mA
0.5 mA
25°C
30
20
10
0
0.3 mA
0.6 mA
0.7 mA
Ta = 75°C
−25°C
0.3
0.1
0.1 mA
25°C
0.03
0.01
−25°C
0
0.1 0.3
1
3
10
30
100
0
2
4
6
8
10
12
1
3
10
30
100 300 1000
(
)
( )
V
Collector current IC mA
(
)
Collector to emitter voltage VCE
Collector current IC mA
SJH00010BED
3
UNR22XX Series
Cob
VCB
IO
VIN
VIN
IO
10000
6
5
4
3
2
1
0
100
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
3000
1000
30
10
300
100
3
1
30
10
0.3
0.1
3
1
0.03
0.01
0.4
0.6
0.8
1.0
1.2
1.4
0.1 0.3
1
3
10
30
100
0.1 0.3
1
3
10
30
100
( )
V
Input voltage VIN
( )
V
(
)
Collector to base voltage VCB
Output current IO mA
Characteristics charts of UNR2211
IC VCE
VCE(sat)
IC
hFE
IC
400
300
200
100
0
160
100
IC / IB = 10
VCE = 10 V
Ta = 75°C
Ta = 25°C
IB = 1.0 mA
140
120
100
80
0.9 mA
30
10
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
3
1
0.3 mA
60
25°C
0.3
0.1
25°C
Ta = 75°C
0.2 mA
0.1 mA
−25°C
40
−25˚C
20
0.03
0.01
0
1
3
10
30
100 300 1000
0
2
4
6
8
10
12
0.1 0.3
1
3
10
30
100
(
)
Collector current IC mA
( )
V
(
)
Collector to emitter voltage VCE
Collector current IC mA
Cob
VCB
IO
VIN
VIN
IO
10000
6
100
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
3000
1000
30
10
5
4
3
2
1
0
300
100
3
1
30
10
0.3
0.1
3
1
0.03
0.01
0.4
0.6
0.8
1.0
1.2
)
1.4
0.1 0.3
1
3
10
30
(
100
)
0.1 0.3
1
3
10
30
100
(
Input voltage VIN
V
Collector to base voltage VCB
V
(
)
Output current IO mA
SJH00010BED
4
UNR22XX Series
Characteristics charts of UNR2212
IC VCE
VCE(sat)
IC
hFE
IC
100
160
400
300
200
100
0
IC / IB = 10
VCE = 10 V
Ta = 75°C
Ta = 25°C
140
30
10
IB = 1.0 mA
0.9 mA
0.7 mA
0.8 mA
120
100
80
60
40
20
0
0.6 mA
0.5 mA
3
1
0.4 mA
0.3 mA
0.2 mA
25°C
0.3
0.1
25°C
Ta = 75°C
−25°C
−25°C
0.03
0.01
0.1 mA
0.1 0.3
1
3
10
30
100
0
2
4
6
8
10
12
1
3
10
30
100 300 1000
(
)
( )
V
(
)
Collector current IC mA
Collector to emitter voltage VCE
Collector current IC mA
Cob
VCB
IO
VIN
VIN
IO
6
5
4
3
2
1
0
10000
100
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
3000
1000
30
10
300
100
3
1
30
10
0.3
0.1
3
1
0.03
0.01
0.1 0.3
1
3
10
30
100
0.4
0.6
0.8
1.0
1.2
1.4
0.1
0.3
1
3
10
30
100
( )
V
( )
Input voltage VIN V
Collector to base voltage VCB
(
)
Output current IO mA
Characteristics charts of UNR2213
IC VCE
VCE(sat)
IC
hFE
IC
100
400
160
IC / IB = 10
VCE = 10 V
Ta = 25°C
IB = 1.0 mA
350
300
250
200
150
100
50
140
120
100
80
30
10
0.9 mA
0.8 mA
0.7 mA
Ta = 75°C
25°C
0.6 mA
0.5 mA
0.4 mA
0.3 mA
3
1
−25°C
60
0.3
0.1
Ta = 75°C
25°C
0.2 mA
0.1 mA
40
−25°C
20
0.03
0.01
0
0
0.1 0.3
1
3
10
30
100
1
3
10
30
100 300 1000
0
2
4
6
8
10
12
(
)
( )
Collector current IC mA
Collector current IC mA
( )
V
Collector to emitter voltage VCE
SJH00010BED
5
UNR22XX Series
Cob
VCB
IO
VIN
VIN
IO
10000
6
5
4
3
2
1
0
100
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
3000
1000
30
10
300
100
3
1
30
10
0.3
0.1
3
1
0.03
0.01
0.4
0.6
0.8
1.0
1.2
1.4
0.1 0.3
1
3
10
30
100
0.1 0.3
1
3
10
30
100
( )
V
Input voltage VIN
( )
V
(
)
Collector to base voltage VCB
Output current IO mA
Characteristics charts of UNR2214
IC VCE
VCE(sat)
IC
hFE
IC
160
400
350
300
250
200
150
100
50
100
IC / IB = 10
Ta = 25°C
VCE = 10 V
140
30
10
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
120
100
80
60
40
20
0
3
1
Ta = 75°C
0.5 mA
0.4 mA
0.3 mA
25°C
0.3
0.1
Ta = 75°C
−25°C
25°C
0.2 mA
0.1 mA
0.03
0.01
−25°C
0
0
2
4
6
8
10
12
1
3
10
30
100 300 1000
0.1 0.3
1
3
10
30
100
( )
V
(
)
Collector to emitter voltage VCE
(
)
Collector current IC mA
Collector current IC mA
Cob
VCB
IO
VIN
VIN
IO
100
6
5
4
3
2
1
0
10000
VO = 0.2 V
Ta = 25°C
VO = 5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
30
10
3000
1000
3
1
300
100
0.3
0.1
30
10
0.03
0.01
3
1
0.1 0.3
1
3
10
30
)
100
0.1 0.3
1
3
10
30
(
100
)
0.4
0.6
0.8
1.0
1.2
)
1.4
(
(
Output current IO mA
Collector to base voltage VCB
V
Input voltage VIN
V
SJH00010BED
6
UNR22XX Series
Characteristics charts of UNR2215
IC VCE
VCE(sat)
IC
hFE
IC
160
100
400
350
300
250
200
150
100
50
IC / IB = 10
Ta = 25°C
VCE = 10 V
IB = 1.0 mA
140
30
10
0.9 mA
0.8 mA
120
0.7 mA
0.6 mA
Ta = 75°C
100
0.5 mA
3
1
0.4 mA
0.3 mA
80
60
40
20
25°C
0.3
0.1
−25°C
Ta = 75°C
25°C
0.2 mA
0.1 mA
0.03
0.01
−25°C
0
0
0
2
4
6
8
10
12
)
0.1 0.3
1
3
10
30
100
1
3
10
30
100 300 1000
(
V
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
Cob
VCB
IO
VIN
VIN
IO
100
10000
6
5
4
3
2
1
0
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
E = 0
Ta = 25°C
I
30
10
3000
1000
3
1
300
100
0.3
0.1
30
10
0.03
0.01
3
1
0.1 0.3
1
3
10
30
)
100
0.4
0.6
0.8
1.0
1.2
)
1.4
0.1 0.3
1
3
10
30
100
(
(
Output current IO mA
(
V
)
Input voltage VIN
V
Collector to base voltage VCB
Characteristics charts of UNR2216
IC VCE
VCE(sat)
IC
hFE
IC
160
100
400
350
300
250
200
150
100
50
IC / IB = 10
Ta = 25°C
VCE = 10 V
140
30
10
IB = 1.0 mA
0.9 mA
Ta = 75°C
25°C
120
0.8 mA
0.7 mA
0.6 mA
0.5 mA
100
3
1
−25°C
0.4 mA
0.3 mA
80
60
40
20
0
0.3
0.1
Ta = 75°C
0.2 mA
25°C
0.03
0.01
0.1 mA
10
−25°C
0
0
2
4
6
8
12
0.1 0.3
1
3
10
30
100
1
3
10
)
Collector current IC mA
30
100 300 1000
( )
V
(
)
Collector to emitter voltage VCE
Collector current IC mA
(
SJH00010BED
7
UNR22XX Series
Cob
VCB
IO
VIN
VIN
IO
10000
6
5
4
3
2
1
0
100
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
3000
1000
30
10
300
100
3
1
30
10
0.3
0.1
3
1
0.03
0.01
0.4
0.6
0.8
1.0
1.2
)
1.4
0.1 0.3
1
3
10
30
(
100
)
0.1 0.3
1
3
10
30
100
(
Input voltage VIN
V
Collector to base voltage VCB
V
(
)
Output current IO mA
Characteristics charts of UNR2217
IC VCE
VCE(sat)
IC
hFE
IC
400
350
300
250
200
150
100
50
100
120
IC / IB = 10
Ta = 25°C
VCE = 10 V
IB =1 .0 mA
0.9 mA
30
10
0.8 mA
100
0.7 mA
0.6 mA
0.5 mA
80
3
1
0.4 mA
0.3 mA
0.2 mA
60
Ta = 75°C
Ta = 75°C
25°C
0.3
0.1
40
25°C
−25°C
20
0.1 mA
0.03
0.01
−25°C
0
0
1
3
10
30
100 300 1000
0.1 0.3
1
3
10
30
100
0
2
4
6
8
10
(
12
)
(
)
(
)
Collector current IC mA
Collector current IC mA
Collector to emitter voltage VCE
V
Cob
VCB
IO
VIN
VIN
IO
10000
100
6
5
4
3
2
1
0
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
3000
1000
30
10
300
100
3
1
30
10
0.3
0.1
3
1
0.03
0.01
0.4
0.6
0.8
1.0
1.2
)
1.4
0.1 0.3
1
3
10
30
100
0.1 0.3
1
3
10
30
100
(
( )
Output current I mA
O
Input voltage VIN
V
( )
V
Collector to base voltage VCB
SJH00010BED
8
UNR22XX Series
Characteristics charts of UNR2218
IC VCE
VCE(sat)
IC
hFE
IC
240
100
160
120
80
40
0
IC / IB = 10
Ta = 25°C
VCE = 10 V
30
10
200
IB = 1.0 mA
0.9 mA
160
120
80
40
0
0.8 mA
0.7 mA
3
1
Ta = 75°C
Ta = 75°C
0.6 mA
0.5 mA
0.4 mA
25°C
0.3
0.1
−25°C
25°C
0.3 mA
0.2 mA
0.1 mA
0.03
0.01
−25°C
0
2
4
6
8
10
12
0.1 0.3
1
3
10
30
100
1
3
10
30
100 300 1000
( )
V
Collector to emitter voltage VCE
(
)
(
)
Collector current IC mA
Collector current IC mA
Cob
VCB
IO
VIN
VIN
IO
100
6
10000
VO = 0.2 V
Ta = 25°C
VO = 5 V
Ta = 25°C
f = 1 MHz
IE = 0
30
10
Ta = 25°C
3000
1000
5
4
3
2
1
0
3
1
300
100
0.3
0.1
30
10
0.03
0.01
3
1
0.1 0.3
1
3
10
30
100
0.1 0.3
1
3
10
30
100
0.4
0.6
0.8
1.0
1.2
1.4
(
)
Output current IO mA
( )
V
( )
Input voltage VIN V
Collector to base voltage VCB
Characteristics charts of UNR2219
IC VCE
VCE(sat)
IC
hFE
IC
240
160
120
80
40
0
100
IC / IB = 10
Ta = 25°C
VCE = 10 V
30
10
200
IB = 1.0 mA
0.9 mA
0.8 mA
160
0.7 mA
3
1
0.6 mA
Ta = 75°C
120
25°C
−25°C
Ta = 75°C
0.5 mA
0.4 mA
0.3
0.1
80
25°C
0.3 mA
40
0
0.2 mA
0.1 mA
0.03
0.01
−25°C
0
2
4
6
8
10
12
1
3
10
30
100 300 1000
0.1 0.3
1
3
10
30
100
( )
V
(
)
Collector to emitter voltage VCE
Collector current IC mA
(
)
Collector current IC mA
SJH00010BED
9
UNR22XX Series
Cob
VCB
IO
VIN
VIN
IO
100
10000
6
5
4
3
2
1
0
V
= 0.2 V
VO = 5 V
Ta = 25°C
TaO= 25°C
f = 1 MHz
IE = 0
Ta = 25°C
30
10
3000
1000
3
1
300
100
0.3
0.1
30
10
0.03
0.01
3
1
0.1 0.3
1
3
10
30
100
0.4
0.6
0.8
1.0
1.2
1.4
0.1 0.3
1
3
10
30
100
(
)
Output current IO mA
( )
Input voltage VIN V
( )
V
Collector to base voltage VCB
Characteristics charts of UNR221D
IC VCE
VCE(sat)
IC
hFE
IC
160
120
80
40
0
30
100
IC / IB = 10
Ta = 25°C
0.9 mA
VCE = 10 V
Ta = 75°C
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
0.3 mA
30
10
25°C
−25°C
25
20
15
10
5
IB = 1.0 mA
3
1
0.2 mA
0.1 mA
0.3
0.1
Ta = 75°C
25°C
−25°C
0.03
0.01
0
1
3
10
30
100 300 1000
0
2
4
6
8
10
12
0.1 0.3
1
3
10
30
100
( )
V
(
)
Collector to emitter voltage VCE
Collector current IC mA
(
)
Collector current IC mA
Cob
VCB
IO
VIN
VIN
IO
6
5
4
3
2
1
0
10000
100
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
3000
1000
30
10
300
100
3
1
30
10
0.3
0.1
3
1
0.03
0.01
0.1 0.3
1
3
10
30
(
100
)
1.5
2.0
2.5
3.0
3.5
)
4.0
0.1 0.3
1
3
10
30
100
(
Collector to base voltage VCB
V
Input voltage VIN
V
(
)
Output current IO mA
SJH00010BED
10
UNR22XX Series
Characteristics charts of UNR221E
IC VCE
VCE(sat)
IC
hFE
IC
100
60
160
120
80
40
0
IB = 1.0 mA
IC / IB = 10
0.7 mA
Ta = 25°C
0.9 mA
0.8 mA
VCE = 10 V
Ta = 75°C
0.6 mA
30
10
50
40
30
20
10
0
25°C
3
1
−25°C
0.2 mA
0.1 mA
0.3 mA
0.4 mA
0.5 mA
Ta = 75°C
0.3
0.1
25°C
0.03
0.01
−25°C
0.1 0.3
1
3
10
30
100
0
2
4
6
8
10
12
1
3
10
30
100 300 1000
(
)
( )
V
Collector current IC mA
(
)
Collector to emitter voltage VCE
Collector current IC mA
Cob
VCB
IO
VIN
VIN
IO
10000
6
100
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1MHz
IE = 0
Ta = 25°C
3000
1000
30
10
5
4
3
2
1
0
300
100
3
1
30
10
0.3
0.1
3
1
0.03
0.01
1.5
2.0
2.5
3.0
3.5
4.0
0.1 0.3
1
3
10
30
100
0.1 0.3
1
3
10
30
100
( )
Input voltage VIN V
( )
V
Collector to base voltage VCB
(
)
Output current IO mA
Characteristics charts of UNR221F
IC VCE
VCE(sat)
IC
hFE
IC
240
100
160
120
80
40
0
IC / IB = 10
Ta = 25°C
VCE = 10 V
30
10
200
0.9 mA
0.8 mA
160
120
80
40
0
0.7 mA
0.6 mA
3
1
Ta = 75°C
Ta = 75°C
IB = 1.0 mA
25°C
−25°C
0.3
0.1
0.5 mA
0.4 mA
0.3 mA
25°C
0.03
0.01
0.2 mA
0.1 mA
−25°C
0
2
4
6
8
10
12
0.1 0.3
1
3
10
30
100
1
3
10
)
Collector current IC mA
30
100 300 1000
( )
V
(
)
Collector to emitter voltage VCE
Collector current IC mA
(
SJH00010BED
11
UNR22XX Series
Cob
VCB
IO
VIN
VIN
IO
6
5
4
3
2
1
0
10000
100
VO = 5 V
Ta = 25°C
VO = 0.2 V
f = 1 MHz
IE = 0
Ta = 25°C
T
= 25°C
a
3000
1000
30
10
300
100
3
1
30
10
0.3
0.1
3
1
0.03
0.01
0.1 0.3
1
3
10
30
100
0.4
0.6
0.8
1.0
1.2
1.4
0.1 0.3
1
3
10
30
100
( )
V
( )
Input voltage VIN V
Collector to base voltage VCB
(
)
Output current IO mA
Characteristics charts of UNR221K
IC VCE
VCE(sat)
IC
hFE
IC
240
100
10
240
200
160
120
80
IC / IB = 10
VCE = 10 V
Ta = 25°C
200
160
Ta = 75°C
25°C
IB = 1.2 mA
120
1
1.0 mA
0.8 mA
Ta = 75°C
80
25°C
0.6 mA
−25°C
0.1
0.01
0.4 mA
0.2 mA
10 12
−25°C
40
40
0
0
0
2
4
6
8
1
3
10
30
100 300 1000
1
3
10
)
Collector current IC mA
30
100 300 1000
(
V
)
(
)
(
Collector to emitter voltage VCE
Collector current IC mA
Cob
VCB
VIN
IO
100
6
5
4
3
2
1
0
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
30
10
3
1
0.3
0.1
0.03
0.01
1
3
10
30
100
0.1 0.3
1
3
10
30
100
( )
V
(
)
Collector to base voltage VCB
Output current IO mA
SJH00010BED
12
UNR22XX Series
Characteristics charts of UNR221L
IC VCE
VCE(sat)
IC
hFE
IC
100
10
240
240
200
160
120
80
IC / IB = 10
Ta = 25°C
VCE = 10 V
200
Ta = 75°C
25°C
160
IB = 1.0 mA
0.8 mA
1
120
0.6 mA
−25°C
Ta = 75°C
25°C
80
40
0
0.4 mA
0.2 mA
0.1
0.01
40
−25°C
0
1
3
10
30
100 300 1000
0
2
4
6
8
10
12
1
3
10
30
100 300 1000
(
)
( )
V
Collector current IC mA
(
)
Collector to emitter voltage VCE
Collector current IC mA
Cob
VCB
VIN
IO
6
5
4
3
2
1
0
100
10
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
0.1
0.01
1
3
10
30
100
0.1 0.3
1
3
10
30
100
( )
V
(
)
Collector to base voltage VCB
Output current IO mA
Characteristics charts of UNR221M
IC VCE
VCE(sat)
IC
hFE
IC
500
400
300
200
100
0
240
10
IC / IB = 10
Ta = 25°C
VCE = 10 V
3
1
IB = 1.0 mA
200
160
120
80
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.3
0.1
Ta = 75°C
Ta = 75°C
25°C
25°C
0.5 mA
0.4 mA
0.3 mA
0.03
0.01
−25°C
−25˚C
0.2 mA
40
0.1 mA
0.003
0.001
0
1
3
10
30
100 300 1000
0
2
4
6
8
10
(
12
)
1
3
10
30
100 300 1000
(
)
Collector current IC mA
(
)
Collector to emitter voltage VCE
V
Collector current IC mA
SJH00010BED
13
UNR22XX Series
Cob
VCB
IO
VIN
VIN
IO
104
103
102
10
1
5
4
3
2
1
0
100
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
30
10
3
1
0.3
0.1
0.03
0.01
0.4
0.6
0.8
1.0
1.2
)
1.4
0.1 0.3
1
3
10
30
(
100
)
0.1 0.3
1
3
10
30
)
100
(
Input voltage VIN
V
(
Collector to base voltage VCB
V
Output current IO mA
Characteristics charts of UNR221N
IC VCE
VCE(sat)
IC
hFE
IC
160
10
480
400
320
240
160
80
IC / IB = 10
VCE = 10 V
Ta = 25°C
140
IB = 1.0 mA
0.9 mA
120
100
80
60
40
20
0
0.8 mA
0.7 mA
0.6 mA
0.5 mA
Ta = 75°C
1
0.4 mA
25°C
0.3 mA
Ta = 75°C
−25°C
0.2 mA
0.1 mA
0.1
0.01
25°C
−25°C
0
0
2
4
6
8
10
12
1
10
100
1000
1
10
100
1000
( )
V
(
)
Collector to emitter voltage VCE
Collector current IC mA
(
)
Collector current IC mA
Cob
VCB
IO
VIN
VIN
IO
100
10
6
10000
1000
100
10
VO = 0.2 V
Ta = 25°C
VO = 5 V
Ta = 25°C
f = 1 MHz
IE = 0
a
T
= 25°C
5
4
3
2
1
0
1
0.1
0.01
1
0.4
0.1
1
10
100
1
10
Collector to base voltage VCB
100
)
0.6
0.8
1
1.2
)
1.4
(
)
(
V
(
Output current IO mA
Input voltage VIN
V
SJH00010BED
14
UNR22XX Series
Characteristics charts of UNR221T
IC VCE
VCE(sat)
IC
hFE
IC
10
160
480
400
320
240
160
80
IC / IB = 10
VCE = 10 V
Ta = 25°C
140
IB = 1.0 mA
0.9 mA
120
100
80
60
40
20
0
0.8 mA
0.7 mA
0.6 mA
0.5 mA
Ta = 75°C
1
0.4 mA
25°C
0.3 mA
−25°C
Ta = 75°C
0.2 mA
0.1 mA
0.1
0.01
25°C
−25°C
0
1
10
100
1000
0
2
4
6
8
10
12
1
10
)
Collector current IC mA
100
1000
(
)
Collector current IC mA
( )
V
(
Collector to emitter voltage VCE
Cob
VCB
IO
VIN
VIN
IO
100
10
6
10000
1000
100
10
VO = 0.2 V
Ta = 25°C
VO = 5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
1
0.1
0.01
1
0.4
0.1
1
10
100
1
10
Collector to base voltage VCB
100
)
0.6
0.8
1
1.2
1.4
(
)
(
V
( )
V
Output current IO mA
Input voltage VIN
Characteristics charts of UNR221V
IC VCE
VCE(sat)
IC
hFE
IC
240
10
160
IC / IB = 10
VCE = 10 V
Ta = 25°C
140
200
160
120
80
120
100
80
60
40
20
0
IB = 1.0 mA
1
0.9 mA
0.8 mA
0.7 mA
Ta = 75°C
25°C
0.6 mA
Ta = 75°C
25°C
0.5 mA
0.4 mA
0.1
0.01
−25°C
−25°C
40
0.3 mA
0.2 mA
0
1
10
100
1000
1
10
100
1000
0
2
4
6
8
10
12
( )
Collector current IC mA
(
)
( )
V
Collector current IC mA
Collector to emitter voltage VCE
SJH00010BED
15
UNR22XX Series
Cob
VCB
IO
VIN
VIN
IO
10000
1000
100
10
6
5
4
3
2
1
0
100
10
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
0.1
0.01
1
0.4
0.6
0.8
1
1.2
1.4
1
10
100
0.1
1
10
100
( )
V
( )
V
Input voltage VIN
(
)
Collector to base voltage VCB
Output current IO mA
Characteristics charts of UNR221Z
IC VCE
VCE(sat)
IC
hFE
IC
160
480
400
320
240
160
80
10
IC / IB = 10
VCE = 10 V
Ta = 25°C
140
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
120
100
80
60
40
20
0
1
Ta = 75°C
0.4 mA
0.3 mA
25°C
Ta = 75°C
25°C
−25°C
0.2 mA
0.1 mA
0.1
0.01
−25°C
0
0
2
4
6
8
10
12
1
10
)
Collector current IC mA
100
1000
1
10
100
1000
(
V
)
(
Collector to emitter voltage VCE
(
)
Collector current IC mA
Cob
VCB
IO
VIN
VIN
IO
100
10
10000
1000
100
10
6
5
4
3
2
1
0
VO = 0.2 V
Ta = 25°C
VO = 5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
0.1
0.01
1
0.4
0.1
1
10
100
0.6
0.8
1
1.2
1.4
1
10
100
(
)
( )
Input voltage VIN V
Output current IO mA
( )
V
Collector to base voltage VCB
SJH00010BED
16
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Govern-
ment if any of the products or technologies described in this material and controlled under the
"Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative character-
istics and applied circuit examples of the products. It does not constitute the warranting of industrial
property, the granting of relative rights, or the granting of any license.
(3) The products described in this material are intended to be used for standard applications or gen-
eral electronic equipment (such as office equipment, communications equipment, measuring in-
struments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(4) The products and product specifications described in this material are subject to change without
notice for reasons of modification and/or improvement. At the final stage of your design, purchas-
ing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to
make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, redundant design is recommended,
so that such equipment may not violate relevant laws or regulations because of the function of our
products.
(6) When using products for which dry packing is required, observe the conditions (including shelf life
and after-unpacking standby time) agreed upon when specification sheets are individually exchanged.
(7) No part of this material may be reprinted or reproduced by any means without written permission
from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic
semiconductor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information
before starting precise technical research and/or purchasing activities.
B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but
there is always the possibility that further rectifications will be required in the future. Therefore,
Panasonic will not assume any liability for any damages arising from any errors etc. that may ap-
pear in this material.
C. These materials are solely intended for a customer's individual use.
Therefore, without the prior written approval of Panasonic, any other use such as reproducing,
selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR
UNR221L(UN221L) 相关器件
型号 | 制造商 | 描述 | 价格 | 文档 |
UNR221M | PANASONIC | Silicon NPN epitaxial planar transistor | 获取价格 | |
UNR221M(UN221M) | ETC | Composite Device - Transistors with built-in Resistor | 获取价格 | |
UNR221N | PANASONIC | Silicon NPN epitaxial planar transistor | 获取价格 | |
UNR221N(UN221N) | ETC | Composite Device - Transistors with built-in Resistor | 获取价格 | |
UNR221T | PANASONIC | Silicon NPN epitaxial planar transistor | 获取价格 | |
UNR221T(UN221T) | ETC | Composite Device - Transistors with built-in Resistor | 获取价格 | |
UNR221V | PANASONIC | Silicon NPN epitaxial planar transistor | 获取价格 | |
UNR221V(UN221V) | ETC | Composite Device - Transistors with built-in Resistor | 获取价格 | |
UNR221W | PANASONIC | Silicon NPN epitaxial planar type | 获取价格 | |
UNR221XSERIES(UN221XSERIES) | ETC | UNR221X Series (UN221X Series) - NPN Transistors with built-in Resistor | 获取价格 |
UNR221L(UN221L) 相关文章
- 2024-09-20
- 6
- 2024-09-20
- 9
- 2024-09-20
- 8
- 2024-09-20
- 6