UNR4116(UN4116) [ETC]

Composite Device - Transistors with built-in Resistor ; 复合器件 - 晶体管具有内置电阻\n
UNR4116(UN4116)
型号: UNR4116(UN4116)
厂家: ETC    ETC
描述:

Composite Device - Transistors with built-in Resistor
复合器件 - 晶体管具有内置电阻\n

晶体 晶体管
文件: 总15页 (文件大小:374K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Transistors with built-in Resistor  
UNR41XX Series (UN41XX Series)  
Silicon PNP epitaxial planar transistor  
Unit: mm  
4.0 0.2  
2.0 0.2  
For digital circuits  
0.75 max.  
Features  
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts  
New S type package, allowing supply with the radial taping  
Resistance by Part Number  
(R1)  
(R2)  
+0.20  
–0.10  
0.45  
UNR4110 (UN4110)  
UNR4111 (UN4111)  
UNR4112 (UN4112)  
UNR4113 (UN4113)  
UNR4114 (UN4114)  
UNR4115 (UN4115)  
UNR4116 (UN4116)  
UNR4117 (UN4117)  
UNR4118 (UN4118)  
UNR4119 (UN4119)  
UNR411D (UN411D)  
UNR411E (UN411E)  
UNR411F (UN411F)  
UNR411H (UN411H)  
UNR411L (UN411L)  
UNR411M  
47 kΩ  
10 kΩ  
22 kΩ  
47 kΩ  
10 kΩ  
10 kΩ  
4.7 kΩ  
22 kΩ  
0.51 kΩ  
1 kΩ  
47 kΩ  
47 kΩ  
4.7 kΩ  
2.2 kΩ  
4.7 kΩ  
2.2 kΩ  
4.7 kΩ  
+0.20  
0.45  
–0.10  
(2.5) (2.5)  
10 kΩ  
22 kΩ  
47 kΩ  
47 kΩ  
0.7 0.1  
1: Emitter  
2: Collector  
3: Base  
1
2
3
NS-B1 Package  
5.1 kΩ  
10 kΩ  
10 kΩ  
22 kΩ  
10 kΩ  
10 kΩ  
4.7 kΩ  
47 kΩ  
47 kΩ  
Internal Connection  
R1  
B
C
E
R2  
UNR411N  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Collector current  
Symbol  
VCBO  
VCEO  
IC  
Rating  
Unit  
V
50  
50  
V
100  
mA  
mW  
°C  
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
300  
Tj  
150  
Tstg  
55 to +150  
°C  
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: July 2002  
SJH00018CED  
1
UNR41XX Series  
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
ICBO  
Conditions  
VCB = −50 V, IE = 0  
Min  
Typ  
Max  
0.1  
0.5  
0.5  
0.2  
Unit  
Collector cutoff current  
µA  
ICEO  
VCE = −50 V, IB = 0  
VEB = −6 V, IC = 0  
Emitter  
cutoff  
UNR4111  
IEBO  
mA  
UNR4112/4114/411D/  
411E/411M/411N  
current  
UNR4113  
0.1  
0.01  
1.0  
UNR4110/4115/4116/4117  
UNR411F/411H  
UNR4119  
1.5  
UNR4118/411L  
2.0  
Collector to base voltage  
VCBO  
VCEO  
hFE  
IC = −10 µA, IE = 0  
IC = −2 mA, IB = 0  
50  
50  
35  
V
V
Collector to emitter voltage  
DC  
UNR4111  
VCE = −10 V, IC = −5 mA  
current  
gain  
UNR4112/411E  
UNR4113/4114/411M  
60  
80  
UNR4110*/41115*/4116*/  
4117 *  
160  
460  
UNR4118/411L  
UNR4119/411D/411F/411H  
UNR411N  
20  
30  
80  
400  
Collector to emitter saturation voltage  
High level output voltage high level  
Low level output voltage  
UNR4113  
VCE(sat)  
VOH  
IC = −10 mA, IB = − 0.3 mA  
0.25  
V
V
V
VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ −4.9  
VCC = −5 V, VB = −2.5 V, RL = 1 kΩ  
VCC = −5 V, VB = −3.5 V, RL = 1 kΩ  
VCC = −5 V, VB = −10 V, RL = 1 kΩ  
VCC = −5 V, VB = −6 V, RL = 1 kΩ  
VCB = −10 V, IE = 2 mA, f = 200 MHz  
VOL  
0.2  
UNR411D  
UNR411E  
Transition frequency  
fT  
80  
MHz  
Input  
resistance UNR4119  
UNR411H/411M  
UNR4118  
R1  
30% 0.51 +30%  
kΩ  
1
2.2  
4.7  
10  
22  
47  
UNR4116/411F/411L/411N  
UNR4111/4114/4115  
UNR4112/4117  
UNR4110/4113/411D/411E  
Note) : hFE rank classification (UNR4110/4115/4116/4117)  
*
Rank  
Q
R
S
hFE  
160 to 260  
210 to 340  
290 to 460  
SJH00018CED  
2
UNR41XX Series  
Electrical Characteristics (continued) Ta = 25°C 3°C  
Parameter  
Symbol  
Conditions  
Min  
0.8  
Typ  
1.0  
Max  
1.2  
Unit  
Resistance UNR4111/4112/4113/411L  
R1/R2  
ratio  
UNR4114  
UNR4118/4119  
UNR411D  
UNR411E  
UNR411F  
UNR411H  
UNR411M  
UNR411N  
0.17  
0.08  
3.7  
0.21  
0.1  
0.25  
0.12  
5.7  
4.7  
1.7  
2.14  
0.47  
0.22  
0.047  
0.1  
2.6  
0.37  
0.17  
0.57  
0.27  
Common characteristics chart  
PT Ta  
400  
300  
200  
100  
0
0
20 40 60 80 100 120 140 160  
(
)
Ambient temperature Ta °C  
Characteristics charts of UNR4110  
IC VCE  
VCE(sat) IC  
hFE IC  
120  
400  
100  
IC / IB = 10  
Ta = 25°C  
VCE = –10 V  
IB = −1.0 mA  
0.9 mA  
30  
10  
100  
80  
60  
40  
20  
0
0.8 mA  
0.7 mA  
0.6 mA  
0.5 mA  
0.4 mA  
0.3mA  
300  
200  
100  
0
Ta = 75°C  
3  
1  
25°C  
Ta = 75°C  
0.2mA  
0.1mA  
25°C  
0.3  
0.1  
25°C  
25°C  
0.03  
0.01  
0
2  
4  
6  
8  
10 12  
1  
3  
10 30 100 300 1000  
0.1 0.3 1  
3  
10 30 100  
(
)
V
(
)
Collector to emitter voltage VCE  
(
)
Collector current IC mA  
Collector current IC mA  
SJH00018CED  
3
UNR41XX Series  
Cob VCB  
IO VIN  
VIN IO  
10000  
100  
6
VO = −5 V  
Ta = 25°C  
VO = − 0.2 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
Ta = 25°C  
3000  
1000  
30  
10  
5
4
3
2
1
0
300  
100  
3  
1  
30  
10  
0.3  
0.1  
3  
1  
0.03  
0.01  
0.4 0.6 0.8 1.0  
1.2  
1.4  
0.1 0.3 1  
3  
10 30 100  
0.1 0.3 1  
3  
10 30 100  
(
)
V
Input voltage VIN  
(
)
(
)
Collector to base voltage VCB  
V
Output current IO mA  
Characteristics charts of UNR4111  
IC VCE  
VCE(sat) IC  
hFE IC  
160  
100  
160  
120  
80  
40  
0
IC / IB = 10  
Ta = 75°C  
25°C  
Ta = 25°C  
VCE = −10 V  
IB = −1.0 mA  
140  
30  
10  
0.9 mA  
120  
0.8 mA  
0.7 mA  
0.6 mA  
0.5 mA  
100  
80  
60  
40  
20  
0
25°C  
3  
1  
0.4 mA  
0.3 mA  
Ta = 75°C  
0.3  
0.1  
25°C  
0.2 mA  
25°C  
0.03  
0.01  
0.1 mA  
0
2  
4  
6  
8  
10 12  
0.1 0.3 1  
3  
10 30 100  
1  
3  
10 30 100 300 1000  
(
)
(
)
Collector to emitter voltage VCE  
V
Collector current IC mA  
(
)
Collector current IC mA  
Cob VCB  
IO VIN  
VIN IO  
–10000  
100  
6
VO = −5 V  
Ta = 25°C  
VO = 0.2 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
Ta = 25°C  
3000  
1000  
30  
10  
5
4
3
2
1
300  
3  
1  
100  
30  
10  
0.3  
0.1  
3  
1  
0.03  
0.01  
0
0.4 0.6 0.8 1.0  
1.2  
1.4  
0.1 0.3 1  
3  
10 30 100  
0.1 0.3 1  
3  
10 30 100  
(
)
Input voltage VIN  
V
(
)
(
)
V
Output current IO mA  
Collector to base voltage VCB  
SJH00018CED  
4
UNR41XX Series  
Characteristics charts of UNR4112  
IC VCE  
VCE(sat) IC  
hFE IC  
160  
400  
300  
200  
100  
0
100  
IC / IB = 10  
Ta = 25°C  
VCE = −10 V  
IB = −1.0 mA  
140  
30  
10  
0.9mA  
0.8mA  
120  
100  
80  
60  
40  
20  
0
0.7mA  
0.6mA  
3  
1  
0.5mA  
0.4mA  
Ta = 75°C  
25°C  
0.3mA  
0.2mA  
0.3  
0.1  
25°C  
Ta = 75°C  
25°C  
25°C  
0.1mA  
0.03  
0.01  
0
2  
4  
6  
8  
10 12  
1  
3  
10 30 100 300 1000  
0.1 0.3 1  
3  
10 30 100  
(
)
(
)
Collector to emitter voltage VCE  
V
Collector current IC mA  
(
)
Collector current IC mA  
Cob VCB  
IO VIN  
VIN IO  
10000  
100  
6
5
4
3
2
1
0
VO = 5 V  
a = 25°C  
VO = 0.2 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
Ta = 25°C  
T
3000  
30  
10  
1000  
300  
3  
1  
100  
30  
10  
0.3  
0.1  
3  
1  
0.03  
0.01  
0.4 0.6 0.8 1.0  
1.2  
1.4  
0.1 0.3 1  
3  
10 30 100  
0.1 0.3 1  
3  
10 30 100  
(
)
( )  
Input voltage VIN V  
Collector to base voltage VCB  
V
(
)
Output current IO mA  
Characteristics charts of UNR4113  
IC VCE  
VCE(sat) IC  
hFE IC  
400  
300  
200  
100  
0
100  
160  
IC / IB = 10  
VCE = −10 V  
Ta = 75°C  
25°C  
IB = −1.0 mA  
0.9 mA  
Ta = 25°C  
30  
10  
140  
120  
100  
80  
60  
40  
20  
0
0.8 mA  
0.7 mA  
0.6 mA  
3  
1  
0.5 mA  
0.4 mA  
25°C  
0.3 mA  
0.2 mA  
0.3  
0.1  
Ta = 75°C  
25°C  
25°C  
0.03  
0.01  
0.1 mA  
1  
3  
10 30 100 300 1000  
0.1 0.3 1  
3  
10 30 100  
0
2  
4  
6  
8  
10 12  
(
)
Collector current IC mA  
(
)
Collector current IC mA  
(
)
V
Collector to emitter voltage VCE  
SJH00018CED  
5
UNR41XX Series  
Cob VCB  
IO VIN  
VIN IO  
100  
6
10000  
VO = 0.2 V  
Ta = 25°C  
VO = −5 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
Ta = 25°C  
30  
10  
3000  
1000  
5
4
3
2
1
0
3  
1  
300  
100  
0.3  
0.1  
30  
10  
0.03  
0.01  
3  
1  
0.1 0.3 1  
3  
10 30 100  
0.1 0.3 1  
3  
10 30 100  
0.4 0.6 0.8 1.0  
1.2  
1.4  
(
)
Output current IO mA  
(
)
V
Collector to base voltage VCB  
(
)
V
Input voltage VIN  
Characteristics charts of UNR4114  
IC VCE  
VCE(sat) IC  
hFE IC  
400  
300  
200  
100  
0
100  
160  
IC / IB = 10  
VCE = −10 V  
Ta = 25°C  
140  
30  
10  
IB = −1.0 mA  
0.9 mA  
0.8 mA  
120  
0.7 mA  
0.6 mA  
100  
3  
1  
Ta = 75°C  
0.5 mA  
80  
60  
40  
20  
0
0.4 mA  
0.3 mA  
0.2 mA  
25°C  
0.3  
0.1  
Ta = 75°C  
25°C  
25°C  
0.1 mA  
0.03  
0.01  
25°C  
1  
3  
10 30 100 300 1000  
0.1 0.3 1  
3  
10 30 100  
0
2  
4  
6  
8  
10 12  
(
)
(
)
Collector current IC mA  
(
)
V
Collector current IC mA  
Collector to emitter voltage VCE  
Cob VCB  
IO VIN  
VIN IO  
6
–10000  
1000  
VO = −5 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
Ta = 25°C  
VO = − 0.2 V  
Ta = 25°C  
3000  
1000  
300  
100  
5
4
3
2
1
300  
100  
30  
10  
30  
3  
1  
10  
3  
1  
0.3  
0.1  
0
0.1 0.3 1  
3  
10 30 100  
0.4 0.6 0.8 1.0  
1.2  
1.4  
0.1 0.3 1  
3  
10 30 100  
(
)
V
Collector to base voltage VCB  
(
)
(
)
Input voltage VIN  
V
Output current IO mA  
SJH00018CED  
6
UNR41XX Series  
Characteristics charts of UNR4115  
IC VCE  
VCE(sat) IC  
hFE IC  
160  
400  
300  
200  
100  
0
100  
IC / IB = 10  
Ta = 25°C  
VCE = −10 V  
IB = 1.0 mA  
140  
120  
100  
80  
60  
40  
20  
0
30  
10  
0.9 mA  
0.8 mA  
0.7 mA  
0.6 mA  
0.5 mA  
0.4 mA  
Ta = 75°C  
3  
1  
25°C  
0.3 mA  
0.2 mA  
Ta = 75°C  
0.3  
0.1  
25°C  
25°C  
3  
0.1 mA  
0.03  
0.01  
25°C  
0
2  
4  
6  
8  
10 12  
1  
3  
10 30 100 300 1000  
0.1 0.3 1  
10 30 100  
(
)
(
)
Collector to emitter voltage VCE  
V
Collector current IC mA  
(
)
Collector current IC mA  
Cob VCB  
IO VIN  
VIN IO  
6
5
4
3
2
1
0
10000  
100  
VO = − 0.2 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
Ta = 25°C  
VO = −5 V  
Ta = 25˚C  
3000  
1000  
30  
10  
300  
100  
3  
1  
30  
10  
0.3  
0.1  
3  
1  
0.03  
0.01  
0.1 0.3 1  
3  
10 30 10  
0.4 0.6 0.8 1.0  
1.2  
1.4  
0.1 0.3 1  
3  
10 30 100  
(
)
(
)
Input voltage VIN  
V
(
)
Collector to base voltage VCB  
V
Output current IO mA  
Characteristics charts of UNR4116  
IC VCE  
VCE(sat) IC  
hFE IC  
400  
300  
200  
100  
0
100  
160  
IC / IB = 10  
VCE = −10 V  
Ta = 25°C  
IB = 1.0 mA  
140  
30  
10  
0.9 mA  
0.8 mA  
120  
0.7 mA  
Ta = 75°C  
0.6 mA  
0.5 mA  
0.4 mA  
100  
80  
60  
40  
20  
0
3  
1  
25°C  
0.3 mA  
0.2 mA  
0.3  
0.1  
Ta = 75°C  
25°C  
25°C  
0.03  
0.01  
0.1 mA  
25°C  
1  
3  
10 30 100 300 1000  
0.1 0.3 1  
3  
10 30 100  
0
2  
4  
6  
8  
10 12  
(
)
Collector current IC mA  
(
)
(
)
V
Collector current IC mA  
Collector to emitter voltage VCE  
SJH00018CED  
7
UNR41XX Series  
Cob VCB  
IO VIN  
VIN IO  
6
100  
10000  
VO = 0.2 V  
Ta = 25°C  
VO = 5 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
Ta = 25°C  
30  
10  
3000  
1000  
5
4
3
2
1
0
3  
1  
300  
100  
0.3  
0.1  
30  
10  
0.03  
0.01  
3  
1  
0.1 0.3 1  
3  
10 30 100  
0.1 0.3 1  
3  
10 30 100  
0.4 0.6 0.8 1.0  
1.2  
1.4  
(
)
(
)
Collector to base voltage VCB  
V
(
)
Input voltage VIN  
V
Output current IO mA  
Characteristics charts of UNR4117  
IC VCE  
VCE(sat) IC  
hFE IC  
400  
300  
200  
100  
0
120  
100  
IC / IB = 10  
Ta = 25°C  
VCE = −10 V  
30  
10  
IB = −1.0 mA  
100  
80  
60  
40  
20  
0
0.9 mA  
0.8 mA  
0.7 mA  
0.6 mA  
0.5 mA  
0.4 mA  
3  
1  
Ta = 75°C  
T
= 75°C  
a
0.3  
0.1  
0.3 mA  
0.2 mA  
25°C  
25°C  
25°C  
25°C  
0.1 mA  
0.03  
0.01  
0
2  
4  
6  
8  
10 12  
0.1 0.3 1  
3  
10 30 100  
1  
3  
10 30 100 300 1000  
(
)
(
)
(
)
Collector current IC mA  
Collector to emitter voltage VCE  
V
Collector current IC mA  
Cob VCB  
IO VIN  
VIN IO  
10000  
100  
6
5
4
3
2
1
0
VO = −5 V  
Ta = 25°C  
VO = 0.2 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
3000  
1000  
Ta = 25°C  
30  
10  
300  
100  
3  
1  
30  
10  
0.3  
0.1  
3  
1  
0.03  
0.01  
0.4 0.6 0.8 1.0  
1.2  
1.4  
0.1 0.3 1  
3  
10 30 100  
0.1 0.3 1  
3  
10 30 100  
(
)
V
Input voltage VIN  
(
)
V
(
)
Collector to base voltage VCB  
Output current IO mA  
SJH00018CED  
8
UNR41XX Series  
Characteristics charts of UNR4118  
IC VCE  
VCE(sat) IC  
hFE IC  
160  
120  
80  
40  
0
240  
100  
IC / IB = 10  
Ta = 25°C  
VCE = −10 V  
30  
10  
200  
IB = 1.0 mA  
0.9 mA  
160  
0.8 mA  
3  
1  
0.7 mA  
Ta = 75°C  
25°C  
120  
Ta = 75°C  
0.6 mA  
25°C  
0.3  
0.1  
0.5 mA  
0.4 mA  
0.3 mA  
0.2 mA  
80  
40  
0
25°C  
0.03  
0.01  
25°C  
0.1 mA  
1  
3  
10 30 100 300 1000  
0
2  
4  
6  
8  
10 12  
0.1 0.3 1  
3  
10 30 100  
(
)
(
)
(
)
Collector current IC mA  
Collector to emitter voltage VCE  
V
Collector current IC mA  
Cob VCB  
IO VIN  
VIN IO  
6
5
4
3
2
1
0
100  
10000  
f = 1 MHz  
IE = 0  
Ta = 25°C  
VO = 0.2 V  
Ta = 25°C  
VO = −5 V  
Ta = 25°C  
30  
10  
3000  
1000  
3  
1  
300  
100  
0.3  
0.1  
30  
10  
0.03  
0.01  
3  
1  
0.1 0.3 1  
3  
10 30 100  
0.1 0.3 1  
3  
10 30 100  
0.4 0.6 0.8 1.0  
1.2  
1.4  
(
)
Collector to base voltage VCB  
V
(
)
(
)
Input voltage VIN  
V
Output current IO mA  
Characteristics charts of UNR4119  
IC VCE  
VCE(sat) IC  
hFE IC  
160  
120  
80  
40  
0
240  
100  
IC / IB = 10  
Ta = 25°C  
VCE = −10 V  
30  
10  
200  
IB = −1.0 mA  
0.9 mA  
0.8 mA  
160  
Ta = 75°C  
3  
1  
0.7 mA  
120  
Ta = 75°C  
25°C  
25°C  
0.3  
0.1  
80  
40  
0
0.6 mA  
0.5 mA  
25°C  
0.4 mA  
0.3 mA  
0.2 mA  
0.1 mA  
10 12  
0.03  
0.01  
25°C  
0
2  
4  
6  
8  
1  
3  
10 30 100 300 1000  
0.1 0.3 1  
3  
10 30 100  
(
)
V
(
)
Collector to emitter voltage VCE  
Collector current IC mA  
(
)
Collector current IC mA  
SJH00018CED  
9
UNR41XX Series  
Cob VCB  
IO VIN  
VIN IO  
100  
6
10000  
VO = − 0.2 V  
Ta = 25°C  
VO = −5 V  
Ta = 25°C  
f = 1 MHz  
E = 0  
Ta = 25°C  
I
30  
10  
3000  
1000  
5
4
3
2
1
0
3  
1  
300  
100  
0.3  
0.1  
30  
10  
0.03  
0.01  
3  
1  
0.1 0.3 1  
3  
10 30 100  
0.1 0.3 1  
3  
10 30 100  
0.4 0.6 0.8 1.0  
1.2  
1.4  
(
)
Output current IO mA  
(
)
Collector to base voltage VCB  
V
(
)
V
Input voltage VIN  
Characteristics charts of UNR411D  
IC VCE  
VCE(sat) IC  
hFE IC  
160  
120  
80  
40  
0
60  
100  
IB = − 1.0 mA  
Ta = 25˚C  
IC / IB = 10  
VCE = 10 V  
Ta = 75°C  
0.9 mA  
0.8 mA  
30  
10  
50  
40  
3  
1  
25°C  
0.3 mA  
0.2 mA  
25°C  
30  
0.7 mA  
0.6 mA  
Ta = 75°C  
0.5 mA  
0.3  
0.1  
20  
0.4 mA  
25°C  
0.1 mA  
10  
0.03  
0.01  
25°C  
0
0
2  
4  
6  
8  
10 12  
1  
3  
10 30 100 300 1000  
0.1 0.3 1  
3  
10 30 100  
(
)
(
)
V
Collector current IC mA  
Collector to emitter voltage VCE  
(
)
Collector current IC mA  
Cob VCB  
IO VIN  
VIN IO  
10000  
6
5
4
3
2
1
100  
VO = −5 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
Ta = 25°C  
VO = − 0.2 V  
Ta = 25°C  
3000  
1000  
30  
10  
300  
3  
1  
100  
30  
10  
0.3  
0.1  
3  
1  
0.03  
0.01  
0
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
0.1 0.3 1  
3  
10 30 100  
0.1 0.3 1  
3  
10 30 100  
(
)
V
Input voltage VIN  
(
)
V
Collector to base voltage VCB  
(
)
Output current IO mA  
SJH00018CED  
10  
UNR41XX Series  
Characteristics charts of UNR411E  
IC VCE  
VCE(sat) IC  
hFE IC  
400  
300  
200  
100  
0
100  
60  
IC / IB = 10  
IB = 1.0 mA  
0.9 mA  
Ta = 25°C  
VCE = −10 V  
0.8 mA 0.7 mA  
30  
10  
50  
40  
30  
20  
10  
0
3  
1  
0.3 mA  
0.2 mA  
Ta = 75°C  
0.6 mA  
0.5 mA  
0.4 mA  
Ta = 75°C  
0.3  
0.1  
25°C  
0.1 mA  
25°C  
25°C  
25°C  
0.03  
0.01  
1  
3  
10 30 100 300 1000  
0
2  
4  
6  
8  
10 12  
0.1 0.3 1  
3  
10 30 100  
(
)
Collector current IC mA  
(
)
(
)
Collector to emitter voltage VCE  
V
Collector current IC mA  
Cob VCB  
IO VIN  
VIN IO  
6
5
4
3
2
1
0
10000  
100  
f = 1 MHz  
IE = 0  
Ta = 25°C  
VO = −5 V  
Ta = 25°C  
VO = − 0.2 V  
Ta = 25°C  
3000  
1000  
30  
10  
300  
100  
3  
1  
30  
10  
0.3  
0.1  
3  
1  
0.03  
0.01  
0.1 0.3 1  
3  
10 30 100  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
0.1 0.3 1  
3  
10 30 100  
(
)
Collector to base voltage VCB  
V
(
)
V
Input voltage VIN  
(
)
Output current IO mA  
Characteristics charts of UNR411F  
IC VCE  
VCE(sat) IC  
hFE IC  
400  
300  
200  
100  
0
100  
240  
IC / IB = 10  
Ta = 25°C  
VCE = −10 V  
30  
10  
IB = −1.0 mA  
0.9 mA  
0.8 mA  
0.7 mA  
0.6 mA  
200  
160  
120  
80  
40  
0
3  
1  
Ta = 75°C  
0.5 mA  
Ta = 75°C  
0.3  
0.1  
25°C  
0.4 mA  
0.3 mA  
0.2 mA  
25°C  
25°C  
0.03  
0.01  
25°C  
0.1 mA  
10 12  
0.1 0.3 1  
3  
10 30 100  
1  
3  
10 30 100 300 1000  
0
2  
4  
6  
8  
(
)
(
)
Collector current IC mA  
(
)
V
Collector current IC mA  
Collector to emitter voltage VCE  
SJH00018CED  
11  
UNR41XX Series  
Cob VCB  
IO VIN  
VIN IO  
6
100  
10000  
VO = 0.2 V  
Ta = 25°C  
VO = −5 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
Ta = 25°C  
30  
10  
3000  
1000  
5
4
3
2
1
0
3  
1  
300  
100  
0.3  
0.1  
30  
10  
0.03  
0.01  
3  
1  
0.1 0.3 1  
3  
10 30 100  
0.1 0.3 1  
3  
10 30 100  
0.4 0.6 0.8 1.0  
1.2  
1.4  
(
)
(
)
Collector to base voltage VCB  
V
Output current IO mA  
(
)
V
Input voltage VIN  
Characteristics charts of UNR411H  
IC VCE  
VCE(sat) IC  
hFE IC  
240  
200  
160  
120  
80  
120  
100  
10  
IC / IB = 10  
VCE = −10 V  
Ta = 25°C  
100  
80  
60  
40  
20  
0
= 0.5 mA  
IB  
Ta = 75°C  
25°C  
0.4 mA  
0.3 mA  
1  
Ta = 75°C  
25°C  
25°C  
0.2 mA  
0.1  
40  
25°C  
0.1 mA  
0
0.01  
0.1 0.3 1  
3  
10 30 100  
0
2  
4  
6  
8  
10 12  
1  
3  
10 30 100 300 1000  
(
)
Collector current IC mA  
(
)
Collector to emitter voltage VCE  
V
(
)
Collector current IC mA  
Cob VCB  
VIN IO  
100  
10  
6
5
4
3
2
1
0
VO = 0.2 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
Ta = 25°C  
1  
0.1  
0.01  
0.1 0.3 1  
3  
10 30 100  
1  
3  
10  
30  
100  
(
)
Output current IO mA  
(
)
Collector to base voltage VCB  
V
SJH00018CED  
12  
UNR41XX Series  
Characteristics charts of UNR411L  
IC VCE  
VCE(sat) IC  
hFE IC  
240  
200  
160  
120  
80  
240  
100  
VCE = −10 V  
IC / IB = 10  
Ta = 25°C  
30  
10  
200  
160  
3  
1  
IB = 1.0 mA  
120  
Ta = 75°C  
0.8 mA  
Ta = 75°C  
25°C  
0.3  
0.1  
80  
40  
0
0.6 mA  
25°C  
25°C  
25°C  
0.4 mA  
0.2 mA  
–10 –12  
40  
0.03  
0.01  
0
1  
3  
10 30 100 300 1000  
0
–2  
–4  
–6  
–8  
1  
3  
10 30 100 300 1000  
(
)
IC mA  
(
)
V
Collector to emitter voltage VCE  
(
)
Collector current IC mA  
Cob VCB  
VIN IO  
6
5
4
3
2
1
0
100  
10  
VO = − 0.2 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
Ta = 25°C  
1  
0.1  
0.01  
1  
3  
10  
30  
100  
0.1 0.3 1  
3  
10 30 100  
(
)
(
)
Collector to base voltage VCB  
V
Output current IO mA  
Characteristics charts of UNR411M  
IC VCE  
VCE(sat) IC  
hFE IC  
140  
200  
160  
120  
80  
100  
Ta = 25°C  
IC / IB = 33.3  
IB = −1.0 mA  
0.9 mA  
VCE = −10 V  
Ta = 75°C  
25°C  
120  
30  
10  
0.8 mA  
0.7 mA  
100  
0.6 mA  
25°C  
0.5 mA  
3  
1  
80  
Ta = 75°C  
25°C  
0.4 mA  
60  
40  
20  
0
0.3 mA  
0.2 mA  
0.3  
0.1  
25°C  
40  
0.1 mA  
0.03  
0.01  
0
1  
0
2  
4  
6  
8  
10 12  
3 10 30 100 300 1000  
)
Collector current IC mA  
1  
3  
10 30 100 300 1000  
(
)
Collector to emitter voltage VCE  
V
(
(
)
Collector current IC mA  
SJH00018CED  
13  
UNR41XX Series  
Cob VCB  
IO VIN  
VIN IO  
1000  
100  
10  
100  
10  
VO = −5 V  
Ta = 25°C  
VO = 0.2 V  
Ta = 25°C  
f = 1 MHz  
Ta = 25°C  
30  
10  
3  
1  
3
0.3  
0.1  
1  
0.03  
0.01  
0.1  
1
0 5 10 −15 20 25 30 35 40  
0
0.5 1.0  
1.5  
2.0  
2.5  
1  
3  
10  
30  
100  
(
)
(
)
Input voltage VIN  
V
Output current IO mA  
(
)
V
Collector to base voltage VCB  
Characteristics charts of UNR411N  
IC VCE  
VCE(sat) IC  
hFE IC  
140  
1  
0.3  
0.1  
0.03  
0.01  
300  
250  
200  
150  
100  
50  
IB = −1.0 mA  
Ta = 25°C  
VCE = −10 V  
0.9 mA  
0.8 mA  
0.7 mA  
0.6 mA  
0.5 mA  
Ta = 75°C  
25°C  
120  
100  
80  
60  
40  
20  
0
25°C  
0.4 mA  
0.3 mA  
Ta = 75°C  
25°C  
25°C  
0.2 mA  
0.1 mA  
IC / IB = 10  
0
1  
0
2  
4  
6  
8  
10 12  
0.1  
0.3 1  
3  
10 30 100  
3  
10 30 100 300 1000  
(
)
V
Collector to emitter voltage VCE  
(
)
(
)
Collector current IC mA  
Collector current IC mA  
Cob VCB  
IO VIN  
VIN IO  
10  
100  
100  
VO = −5 V  
Ta = 25°C  
f = 1 MHz  
Ta = 25°C  
30  
10  
30  
10  
3  
1  
3
3  
1  
0.3  
0.1  
1
0 5 10 −15 20 25 30 35 40  
0
0.5 1.0  
1.5  
2.0  
2.5  
0.1 0.3 1  
3  
10 30 100  
(
)
V
(
)
(
)
Collector to base voltage VCB  
Output current IO mA  
Input voltage VIN  
V
SJH00018CED  
14  
Request for your special attention and precautions in using the technical information  
and semiconductors described in this material  
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government  
if any of the products or technologies described in this material and controlled under the "Foreign  
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.  
(2) The technical information described in this material is limited to showing representative characteris-  
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-  
tual property right or any other rights owned by our company or a third party, nor grants any license.  
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the  
product or technologies as described in this material.  
(4) The products described in this material are intended to be used for standard applications or general  
electronic equipment (such as office equipment, communications equipment, measuring instru-  
ments and household appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,  
combustion equipment, life support systems and safety devices) in which exceptional quality and  
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or  
harm the human body.  
Any applications other than the standard applications intended.  
(5) The products and product specifications described in this material are subject to change without  
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of  
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that  
the latest specifications satisfy your requirements.  
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-  
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-  
wise, we will not be liable for any defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, take into the consideration of  
incidence of break down and failure mode, possible to occur to semiconductor products. Measures  
on the systems such as redundant design, arresting the spread of fire or preventing glitch are  
recommended in order to prevent physical injury, fire, social damages, for example, by using the  
products.  
(7) When using products for which damp-proof packing is required, observe the conditions (including  
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(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written  
permission of Matsushita Electric Industrial Co., Ltd.  
2002 JUL  

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