UNR4216|UN4216 [ETC]
Composite Device - Transistors with built-in Resistor ; 复合器件 - 晶体管具有内置电阻\n
| 型号： | UNR4216|UN4216 |
| 厂家： | 
ETC |
| 描述： | Composite Device - Transistors with built-in Resistor
|
| 文件： | 总14页 (文件大小：335K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors with built-in Resistor
UNR421x Series (UN421x Series)
Silicon NPN epitaxial planar type
Unit: mm
4.0 0.2
2.0 0.2
For digital circuits
■ Features
0.75 max.
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
• New S type package, allowing supply with the radial taping
■ Resistance by Part Number
(R1)
47 kΩ
10 kΩ
22 kΩ
47 kΩ
10 kΩ
10 kΩ
4.7 kΩ
22 kΩ
0.51 kΩ
1 kΩ
47 kΩ
47 kΩ
4.7 kΩ
10 kΩ
4.7 kΩ
(R2)
+0.20
0.45
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
UNR4210 (UN4210)
UNR4211 (UN4211)
UNR4212 (UN4212)
UNR4213 (UN4213)
UNR4214 (UN4214)
UNR4215 (UN4215)
UNR4216 (UN4216)
UNR4217 (UN4217)
UNR4218 (UN4218)
UNR4219 (UN4219)
UNR421D (UN421D)
UNR421E (UN421E)
UNR421F (UN421F)
UNR421K (UN421K)
UNR421L (UN421L)
–0.10
+0.20
0.45
–0.10
(2.5) (2.5)
10 kΩ
22 kΩ
47 kΩ
47 kΩ
0.7 0.1
1: Emitter
2: Collector
3: Base
1
2
3
NS-B1 Package
Internal Connection
5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
4.7 kΩ
4.7 kΩ
R1
B
C
E
R2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
50
50
V
Collector current
IC
PT
100
mA
mW
°C
300
Total power dissipation
Junction temperature
Storage temperature
Tj
150
Tstg
−55 to +150
°C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003
SJH00020BED
1
UNR421x Series
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
ICBO
Conditions
IC = 10 µA, IE = 0
Min
50
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
IC = 2 mA, IB = 0
VCB = 50 V, IE = 0
VCE = 50 V, IB = 0
VEB = 6 V, IC = 0
50
V
0.1
0.5
0.01
0.1
0.2
0.5
1.0
1.5
2.0
µA
µA
mA
ICEO
Emitter-base
UNR4210/4215/4216/4217
IEBO
cutoff current UNR4213
(Collector open) UNR4212/4214/421D/421E
UNR4211
UNR421F/421K
UNR4219
UNR4218/421L
Forward current UNR4218/421K/421L
hFE
VCE = 10 V, IC = 5 mA
20
30
transfer ratio
UNR4219/421D/421F
UNR4211
35
UNR4212/421E
UNR4213/4214
60
80
UNR4210 */4215 */4216 */
4217 *
160
460
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
UNR4213/421K
VCE(sat) IC = 10 mA, IB = 0.3 mA
0.25
V
V
V
VOH
VOL
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
4.9
VCC = 5 V, VB = 2.5 V, RL = 1 kΩ
VCC = 5 V, VB = 3.5 V, RL = 1 kΩ
VCC = 5 V, VB = 10 V, RL = 1 kΩ
VCC = 5 V, VB = 6 V, RL = 1 kΩ
VCB = 10 V, IE = −2 mA, f = 200 MHz
0.2
UNR421D
UNR421E
Transition frequency
fT
150
MHz
Input
UNR4218
R1
−30% 0.51 +30%
kΩ
resistance
UNR4219
1.0
4.7
10
22
47
UNR4216/421F/421L
UNR4211/4214/4215/421K
UNR4212/4217
UNR4210/4213/421D/421E
UNR4218/4219
UNR4214
Resistance
ratio
R1/R2
0.08
0.17
0.37
0.8
0.10
0.21
0.47
1.0
0.12
0.25
0.57
1.2
UNR421F
UNR4211/4212/4213/421L
UNR421K
1.70
1.70
3.7
2.13
2.14
4.7
2.60
2.60
5.7
UNR421E
UNR421D
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
Q
R
S
No-rank
hFE
160 to 260 210 to 340 290 to 460 160 to 460
SJH00020BED
2
UNR421x Series
Common characteristics chart
PT Ta
400
300
200
100
0
0
40
80
120
160
(
)
Ambient temperature Ta °C
Characteristics charts of UNR4210
IC VCE
VCE(sat) IC
hFE IC
400
300
200
100
0
60
100
10
IB = 1.0 mA
Ta = 25°C
IC / IB = 10
VCE = 10 V
0.9 mA
0.8 mA
50
Ta = 75°C
25°C
40
0.4 mA
0.5 mA
30
1
0.3 mA
0.6 mA
0.7 mA
Ta = 75°C
−25°C
0.1 mA
20
10
0
25°C
0.1
0.01
−25°C
1
10
100
1000
0
2
4
6
8
10
12
0.1
1
10
100
(
)
Collector current IC mA
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Cob VCB
IO VIN
VIN IO
6
5
4
3
2
1
0
104
103
102
10
100
10
f = 1 MHz
IE = 0
VO = 0.2 V
Ta = 25°C
VO = 5 V
Ta = 25°C
Ta = 25°C
1
0.1
0.01
1
0.4
0.1
1
10
100
0.1
1
10
100
0.6
0.8
1.0
1.2
1.4
Collector-base voltage VCB (V)
Output current IO (mA)
Input voltage VIN (V)
SJH00020BED
3
UNR421x Series
Characteristics charts of UNR4211
IC VCE
VCE(sat) IC
hFE IC
160
400
300
200
100
0
100
10
IC / IB = 10
Ta = 25°C
VCE = 10 V
Ta = 75°C
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
120
0.6 mA
0.5 mA
0.4 mA
0.3 mA
80
1
25°C
25°C
0.2 mA
Ta = 75°C
−25°C
40
0.1
0.01
−25˚C
0.1 mA
10 12
0
0
2
4
6
8
1
10
100
1000
0.1
1
10
100
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
IO VIN
VIN IO
104
103
102
10
100
10
6
5
4
3
2
1
0
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
0.1
0.01
1
0.4
0.1
1
10
100
0.6
0.8
1.0
1.2
1.4
0.1
1
10
100
Output current IO (mA)
Input voltage VIN (V)
Collector-base voltage VCB (V)
Characteristics charts of UNR4212
IC VCE
VCE(sat) IC
hFE IC
100
10
160
400
IC / IB = 10
Ta = 25°C
VCE = 10 V
IB = 1.0 mA
0.9 mA
0.7 mA
0.8 mA
120
80
40
0
300
200
100
0
0.6 mA
0.5 mA
Ta = 75°C
0.4 mA
1
0.3 mA
0.2 mA
25°C
25°C
Ta = 75°C
−25°C
0.1
0.01
−25°C
0.1 mA
0.1
1
10
100
0
2
4
6
8
10
12
1
10
100
1000
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
SJH00020BED
4
UNR421x Series
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
100
10
6
5
4
3
2
1
0
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
100
0.1
1
10
100
Input voltage VIN (V)
Output current IO (mA)
Collector-base voltage VCB (V)
Characteristics charts of UNR4213
IC VCE
VCE(sat) IC
hFE IC
160
100
10
400
300
200
100
0
IC / IB = 10
Ta = 25°C
VCE = 10 V
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
120
Ta = 75°C
25°C
0.6 mA
0.5 mA
0.4 mA
−25°C
80
1
0.3 mA
Ta = 75°C
25°C
0.2 mA
40
0.1
0.01
−25°C
0.1 mA
0
0
2
4
6
8
10
12
0.1
1
10
100
1
10
100
1000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
IO VIN
VIN IO
6
5
4
3
2
1
0
100
10
104
103
102
10
1
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
VO = 5 V
Ta = 25°C
Ta = 25°C
1
0.1
0.01
0.1
1
10
100
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
Collector-base voltage VCB (V)
Output current IO (mA)
Input voltage VIN (V)
SJH00020BED
5
UNR421x Series
Characteristics charts of UNR4214
IC VCE
VCE(sat) IC
hFE IC
100
10
160
400
300
200
100
0
IC / IB = 10
VCE = 10 V
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
120
80
40
0
0.6 mA
Ta = 75°C
0.5 mA
0.4 mA
0.3 mA
1
25°C
Ta = 75°C
−25°C
25°C
0.1
0.01
0.2 mA
0.1 mA
−25°C
0.1
1
10
100
0
2
4
6
8
10
12
1
10
100
1000
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
6
100
10
VO = 0.2 V
Ta = 25°C
VO = 5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
1
0.1
0.01
0.1
1
10
100
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
Collector-base voltage VCB (V)
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR4215
IC VCE
VCE(sat) IC
hFE IC
160
100
10
400
IC / IB = 10
Ta = 25°C
VCE = 10 V
IB = 1.0 mA
0.9 mA
0.8 mA
120
300
200
100
0
0.7 mA
0.6 mA
0.5 mA
Ta = 75°C
0.4 mA
80
1
25°C
0.3 mA
−25°C
Ta = 75°C
0.2 mA
0.1 mA
25°C
40
0.1
0.01
−25°C
0
0
2
4
6
8
10
12
0.1
1
10
100
1
10
100
1000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
SJH00020BED
6
UNR421x Series
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
6
5
4
3
2
1
0
100
10
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
100
0.1
1
10
100
Input voltage VIN (V)
Collector-base voltage VCB (V)
Output current IO (mA)
Characteristics charts of UNR4216
IC VCE
VCE(sat) IC
hFE IC
400
300
200
100
0
100
10
160
IC / IB = 10
VCE = 10 V
Ta = 25°C
Ta = 75°C
25°C
IB = 1.0 mA
0.9 mA
120
0.8 mA
0.7 mA
0.6 mA
0.5 mA
−25°C
0.4 mA
0.3 mA
1
80
40
0
Ta = 75°C
0.2 mA
25°C
0.1
0.1 mA
10
−25°C
0.01
0.1
1
10
100
1000
1
10
100
0
2
4
6
8
12
Collector current IC (mA)
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Cob VCB
IO VIN
VIN IO
6
5
4
3
2
1
0
104
103
102
10
1
100
10
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
0.1
0.01
0.8
1.0
0.1
1
10
100
0.1
1
10
100
0.4
0.6
1.2
1.4
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
SJH00020BED
7
UNR421x Series
Characteristics charts of UNR4217
IC VCE
VCE(sat) IC
hFE IC
120
400
300
200
100
0
100
10
IC / IB = 10
Ta = 25°C
VCE = 10 V
IB =1 .0 mA
0.9 mA
0.8 mA
100
0.7 mA
0.6 mA
0.5 mA
80
0.4 mA
0.3 mA
0.2 mA
60
1
Ta = 75°C
Ta = 75°C
25°C
40
25°C
−25°C
0.1
0.01
20
0
0.1 mA
10
−25°C
0
2
4
6
8
12
1
10
100
1000
0.1
1
10
100
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
IO VIN
VIN IO
104
103
102
10
6
5
4
3
2
1
0
100
10
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
0.1
0.01
1
0.4
0.1
1
10
100
0.6
0.8
1.0
1.2
1.4
0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current I (mA)
O
Characteristics charts of UNR4218
IC VCE
VCE(sat) IC
hFE IC
240
160
120
80
40
0
100
10
IC / IB = 10
Ta = 25°C
VCE = 10 V
200
IB = 1.0 mA
0.9 mA
160
120
80
40
0
0.8 mA
0.7 mA
Ta = 75°C
1
Ta = 75°C
0.6 mA
0.5 mA
0.4 mA
25°C
−25°C
25°C
0.1
0.01
0.3 mA
0.2 mA
0.1 mA
−25°C
0
2
4
6
8
10
12
1
10
100
1000
0.1
1
10
100
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
SJH00020BED
8
UNR421x Series
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
6
5
4
3
2
1
0
100
10
VO = 5 V
Ta = 25°C
f = 1 MHz
IE = 0
VO = 0.2 V
Ta = 25°C
Ta = 25°C
1
0.1
0.01
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR4219
IC VCE
VCE(sat) IC
hFE IC
160
120
80
40
0
240
100
10
IC / IB = 10
Ta = 25°C
VCE = 10 V
200
IB = 1.0 mA
0.9 mA
0.8 mA
160
0.7 mA
0.6 mA
Ta = 75°C
120
1
25°C
Ta = 75°C
−25°C
0.5 mA
0.4 mA
80
25°C
0.3 mA
0.1
0.01
40
0
0.2 mA
0.1 mA
−25°C
1
10
100
1000
0
2
4
6
8
10
12
0.1
1
10
100
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
6
5
4
3
2
1
0
100
10
VO = 5 V
Ta = 25°C
V
= 0.2 V
f = 1 MHz
IE = 0
TaO= 25°C
Ta = 25°C
1
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
100
0.1
1
10
100
Input voltage VIN (V)
Collector-base voltage VCB (V)
Output current IO (mA)
SJH00020BED
9
UNR421x Series
Characteristics charts of UNR421D
IC VCE
VCE(sat) IC
hFE IC
100
10
30
160
120
80
40
0
IC / IB = 10
Ta = 25°C
0.9 mA
VCE = 10 V
Ta = 75°C
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
0.3 mA
25°C
25
20
15
10
5
−25°C
IB = 1.0 mA
1
0.2 mA
0.1 mA
Ta = 75°C
25°C
0.1
0.01
−25°C
0
0.1
1
10
100
0
2
4
6
8
10
12
1
10
100
1000
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
6
100
10
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
1
0.1
0.01
0.1
1
10
100
1.5
2.0
2.5
3.0
3.5
4.0
0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR421E
IC VCE
VCE(sat) IC
hFE IC
160
60
100
10
IB = 1.0 mA
0.7 mA
IC / IB = 10
Ta = 25°C
VCE = 10 V
0.9 mA
0.6 mA
0.8 mA
50
40
30
20
10
0
Ta = 75°C
120
80
40
0
25°C
−25°C
0.2 mA
0.1 mA
0.3 mA
0.4 mA
0.5 mA
1
Ta = 75°C
25°C
0.1
0.01
−25°C
1
10
100
1000
0
2
4
6
8
10
12
0.1
1
10
100
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
SJH00020BED
10
UNR421x Series
Cob VCB
IO VIN
VIN IO
104
103
102
10
1
100
10
6
5
4
3
2
1
0
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
f = 1MHz
IE = 0
Ta = 25°C
1
0.1
0.01
1.5
2.0
2.5
3.0
3.5
4.0
0.1
1
10
100
0.1
1
10
100
Input voltage VIN (V)
Output current IO (mA)
Collector-base voltage VCB (V)
Characteristics charts of UNR421F
IC VCE
VCE(sat) IC
hFE IC
160
120
80
40
0
240
100
10
IC / IB = 10
Ta = 25°C
VCE = 10 V
200
0.9 mA
0.8 mA
160
120
80
40
0
0.7 mA
0.6 mA
Ta = 75°C
Ta = 75°C
1
25°C
−25°C
IB = 1.0 mA
0.5 mA
0.4 mA
0.3 mA
25°C
0.1
0.01
0.2 mA
0.1 mA
−25°C
1
10
100
1000
0
2
4
6
8
10
12
0.1
1
10
100
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Cob VCB
IO VIN
VIN IO
104
103
102
10
100
10
6
5
4
3
2
1
0
VO = 5 V
Ta = 25°C
VO = 0.2 V
= 25°C
f = 1 MHz
IE = 0
Ta = 25°C
T
a
1
0.1
0.01
1
0.4
0.1
1
10
100
0.1
1
10
100
0.6
0.8
1.0
1.2
1.4
Output current IO (mA)
Collector-base voltage VCB (V)
Input voltage VIN (V)
SJH00020BED
11
UNR421x Series
Characteristics charts of UNR421K
IC VCE
VCE(sat) IC
hFE IC
100
10
240
240
200
160
120
80
IC / IB = 10
VCE = 10 V
Ta = 25°C
200
160
Ta = 75°C
25°C
IB = 1.2 mA
1
120
1.0 mA
0.8 mA
Ta = 75°C
25°C
80
0.6 mA
−25°C
0.1
0.01
0.4 mA
0.2 mA
10 12
−25°C
40
40
0
0
1
10
100
1000
0
2
4
6
8
1
10
100
1000
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Cob VCB
VIN IO
6
5
4
3
2
1
0
100
10
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
0.1
0.01
1
10
100
0.1
1
10
100
Collector-base voltage VCB (V)
Output current IO (mA)
Characteristics charts of UNR421L
IC VCE
VCE(sat) IC
hFE IC
240
200
160
120
80
240
100
IC / IB = 10
VCE = 10 V
Ta = 25°C
200
10
1
Ta = 75°C
25°C
160
IB = 1.0 mA
0.8 mA
120
0.6 mA
−25°C
Ta = 75°C
25°C
80
40
0
0.4 mA
0.2 mA
0.1
0.01
40
−25°C
0
1
10
100
1000
0
2
4
6
8
10
12
1
10
100
1000
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
SJH00020BED
12
UNR421x Series
Cob VCB
VIN IO
100
10
6
5
4
3
2
1
0
VO = 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
1
0.1
0.01
0.1
1
10
100
1
10
100
Output current IO (mA)
Collector-base voltage VCB (V)
SJH00020BED
13
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
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(4) The products described in this material are intended to be used for standard applications or general elec-
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hold appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
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tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
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be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
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2003 SEP
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